数值分析渐变DBR对垂直腔面发射激光器谐振腔模的影响

通过数值分析研究了含线性渐变层的Al0.9Ga0.1As/AlyGa1-yAs/GaAs/AlxGa1-xAS DBR的光学特性及其对VCSEL谐振腔光学特性的影响,建立了渐变型DBR渐变层厚度与折射率的关系,通过特征矩阵法计算了突变GaAs/Al0.9Ga0.1AS DBR和渐变型DBR的反射谱和反射相移,分析了渐变层对DBR反射率和反射相移的影响.对渐变型DBR,要使VCSEL谐振腔满足中心波长相位匹配条件,还需要在DBR靠近谐振腔一侧的最前面增加一定厚度的渐变层,称为相位匹配层.通过计算,我们得到了使VCSEL谐振腔满足相位匹配条件时均匀层和相位匹配层的厚度.     

808nm InGaAlAs垂直腔面发射激光器的结构设计

为实现垂直腔面发射半导体激光器(VCSEL)在808 nm波长的激射,对VCSEL芯片的整体结构进行了设计。基于应变量子阱的能带理论、固体模型理论、克龙尼克-潘纳模型和光学传输矩阵方法,计算了压应变InGaAlAs量子阱的带隙、带阶、量子化子能级以及分布布拉格反射镜(DBR)的反射谱,从而确定了量子阱的组分、厚度以及反射镜的对数。数值模拟的结果表明,阱宽为6 nm的In0.14Ga0.74Al0.12As/Al0.3Ga0.7As量子阱,在室温下激射波长在800 nm左右,其峰值材料增益在工作温度下达到4000 cm-1;渐变层为20 nm的Al0.9Ga0.1As/Al0.2Ga0.8As DBR,出光p面为23对时反射率为99.57%,全反射n面为39.5对时反射率为99.94%。设计的顶发射VCSEL结构通过光电集成专业软件(PICS3D)验证,得到室温下的光谱中心波长在800 nm处,证实了结构设计的正确性。     

940 nm VCSEL中DBR的反射特性分析

应用传输矩阵法计算并分析了分布式布拉格反射镜(DBR)的堆叠方式对反射谱的影响，当入射介质为GaAs材料、出射介质为空气时，DBR以低折射率层/高折射率层(LH)的方式排列具有更高的反射率。研究了入射角度对DBR反射率的影响，利用角度相关的传输矩阵模型对DBR反射谱进行计算，结果表明，DBR反射谱随着入射角度的增加而蓝移，最大反射率随着入射角度的增加而增大。建立了940 nm波长下Al_xGaAs的材料折射率与铝的原子数分数x之间的线性拟合模型，并通过多层剖分等效法，计算分析了渐变层对DBR反射谱特性的影响。相比于突变型DBR结构，渐变型DBR结构在维持最高反射率基本不变的情况下，反射带宽有所减小。     

用X射线衍射研究缓冲层对GaInAs材料的影响

用分子束外延方法制备了具有GaInAs组分渐变缓冲层和不具有GaInAs组分渐变缓冲层的Ga0.9In0.1As/GaAs结构的外延材料。利用高分辨率X射线衍射法(HRXRD)对制备的两种样品分别进行了测试分析。实验结果表明,GaInAs组分渐变缓冲层对外延生长在GaAs衬底上的Ga0.9In0.1As外延材料的晶体质量具有显著的改善作用,极大降低了由于外延层与衬底晶格不匹配所带来的影响。从X射线倒易空间衍射(RSM)二维图谱结果来看,具有GaInAs组分渐变缓冲层结构的样品,其Ga0.9In0.1As外延层与GaInAs组分渐变缓冲层接近完全弛豫,Ga0.9In0.1As外延层的应变降低,表面残留应力小于0.06%,同时,GaAs衬底与Ga0.9In0.1As外延层之间的偏移夹角明显变小。     

基于新型非周期高对比度亚波长光栅光电探测器

本文提出了一种基于新型非周期高对比度亚波长 光栅(High Contrast Subwavelength Grating,HCSG)的谐振腔 增强型(Resonant Cavity Enhanced,RCE)光电探测器(Photodetector,PD),该器件是由顶 部光栅型上反射镜、PIN光探 测结构和分布式布拉格下反射镜(Distributed Bragg Reflectors,DBR)组成。新型非周期HC SG上反射镜是由局部湿法 氧化后形成的Al₂O₃间隔层和非周期GaAs光栅组成,实现了850 n m波段TM模式偏振光的高反射会聚特性,反射 率达到了86.5%且在1.5 μm焦距处实现了光束 会聚。下反射镜是由周期GaAs光栅和GaAs/Al0.9Ga0.1As DBR组成, 周期GaAs光栅对入射光有偏振选择特性,对TM模式的偏振光透射率为96.1%,而对TE模式的偏振光透射率仅有 3.7%。该器件利用了传输矩阵理论方法仿真模拟了其量子效率,量子 效率达到了71.8%,半高全宽接近于0.1 nm。 有效的解决了光电探测器的高量子效率和高响应带宽相互制约的问题,为下一代光通信系统 的发展提供了良好的基础。     

垂直腔面发射激光器DBR的生长优化

基于能带理论和分布布拉格反射镜(DBR)的工作原理,分析了垂直腔面发射激光器(VCSEL)中DBR串联电阻较大的原因。采用组分渐变降低DBR结构中异质结界面处势垒,优化DBR的各层掺杂浓度,通过调控费米能级进一步降低DBR中的异质结势垒,从而有效降低DBR串联电阻。实验采用Al_(0.22)Ga_(0.78)As/Al_(0.9)Ga_(0.1)As作为生长DBR的两种材料,设计了DBR各层厚度,研究了AlGaAs材料的最佳生长温度,利用MOCVD外延技术完成了795nm VCSEL突变DBR与渐变DBR的生长。经过工艺制备,测得突变DBR和渐变DBR的电阻分别为6.6和5.3Ω,优化生长后的DBR电阻得到有效降低。     

垂直腔面发射激光器DBR结构参数的优化设计

采用光学传递矩阵法 ,研究了生长偏差对分布布拉格反射 (DBR)结构反射特性的影响 ,并探讨了两种DBR结构改进方案。结果表明 ,周期厚度偏差将使DBR反射谱发生较大偏移 ,在相位匹配条件下减小高折射层厚度可以降低DBR吸收损耗、提高反射率 ,反向改变顶层和底层DBR周期厚度可以提高垂直腔面发射激光器边模抑制比     

键合方法研制InAsP/InGaAsP量子阱1.3μm垂直腔面发射激光器

设计并研制了由InAsP/InGaAsP应变补偿多量子阱有源层、SiO2/TiO2介质薄膜和GaAs/Al(Ga)As半导体分布布拉格反射镜(DBR)构成的垂直腔面发射激光器(VCSEL).采用直接键合技术实现InP基有源层与GaAs基DBR的晶片融合,并经过侧向湿法腐蚀定义电流限制孔径和沉积介质薄膜DBR等关键器件工艺,研制出InAsP/InGaAsP量子阱垂直腔面发射激光器,其阈值电流为13.5mA,单模激射波长为1288.6nm.     

键合方法研制InAsP/InGaAsP量子阱1.3μm垂直腔面发射激光器

设计并研制了由InAsP/InGaAsP应变补偿多量子阱有源层、SiO2/TiO2介质薄膜和GaAs/Al(Ga)As半导体分布布拉格反射镜（DBR）构成的垂直腔面发射激光器（VCSEL) . 采用直接键合技术实现InP基有源层与GaAs基DBR的晶片融合,并经过侧向湿法腐蚀定义电流限制孔径和沉积介质薄膜DBR等关键器件工艺,研制出InAsP/InGaAsP量子阱垂直腔面发射激光器,其阈值电流为13.5mA,单模激射波长为1288.6nm.     

隧道再生结构的垂直腔面发射激光器激射特性研究

对隧道再生多有源区内腔接触式垂直腔面发射激光器(VCSEL)材料特性进行了实验研究,得到了VCSEL外延片量子阱增益谱峰值波长、谐振腔谐振波长、DBR反射谱中心波长及材料的生长厚度偏差等重要信息。如果谐振腔谐振波长比增益谱峰值波长长20nm以上,阈值条件很难得到满足,器件很难实现激射。符合模拟参数生长的双有源区隧道再生VCSEL实现了室温激射。氧化孔径8.3μm器件,在11mA注入电流下,获得5mW的输出功率,斜率效率0.702mW/mA,激射波长970nm。     

Computation of the effect of a dielectric cylinder on the radiation pattern of a dipole

A method is given for calculating the effect on the horizontal radiation pattern of a dipole when it is enclosed in a dielectric cylinder. Results are shown which indicate that considerable pattern shaping can occur with cylinders of glass fibre when the radius is a wavelength or greater.     

Localization of the Interfaces of a Slab Hidden Behind a Wall

In this paper, a 1-D inverse-scattering problem laying within the framework of through-wall imaging is addressed. In particular, the problem of localizing the interfaces of a slab hidden behind an obstacle, another slab whose electromagnetic features and thickness are known, is considered. To this end, an approximate linear mathematical relationship between the scattered field and the unknown slab-interface positions is stated. Such an approximate relationship arises from neglecting the multiple-reflections between the two unknown slab's interfaces and between the slab and the obstacle. The unknown locations of the slab's interfaces are represented as the support of Dirac-delta functions, and the problem is cast as the inversion of a linear integral operator whose inversion is achieved by means of the Truncated-Singular-Value-Decomposition (TSVD) inversion scheme. The effect of the parameters of the obstacle on the inversion algorithm and the performances achievable by the solution approach are assessed by exploiting synthetic data. Furthermore, a comparison with the reconstructions obtained under the Born approximation and with the time-backscattered field is achieved. Finally, results obtained by employing experimental data collected owing to a stepped-frequency ground-penetrating radar system are also presented.     

Determination of the effective permittivity of a body in a waveguide from the reflection coefficient

The inverse problem of diffraction of the electromagnetic field by an inhomogeneous body placed in a rectangular waveguide with perfectly conducting walls is considered. The problem is reduced to a nonlinear volume singular integral equation. The integral equation is solved with the help of the iteration method. The permittivity is determined with the use of the reflection coefficient. Computation results for a figure of a complex shape are presented.     

Bounds for the resistance of a conductor of a given form

New upper and lower bounds for the resistance of a. conductor of given form are derived in a unified manner from the canonical theory of complementary extremum principles.     

Impedance of a monopole on the base of a large cone

This paper is concerned with the determination of the driving-point impedance of a monopole which is located at the center of the base of a perfectly conducting, right circular cone. The cone is assumed to be sufficiently large that it is valid to apply ray-optical theory. It is shown that the field which is reflected back to the monopole from the edge of the base may be pictured as arising from an equivalent magnetic current located at the base edge, the magnitude of which is determined by wedge-diffraction principles. Use of the induced electromotive-force (EMF) method then allows estimation of the change in the monopole impedance from its value on a ground plane of infinite extent. Proper account is taken of the edge curvature and of the more significant multiply diffracted rays. In the degenerate case in which the cone becomes an infinitely thin disk, the general result is shown to reduce to that obtained by a completely independent method. For this particular case, the theory is also compared with published experimental data and the agreement shown to be good for disks with a diameter exceeding one wavelength.     

Increasing the locking bandwidth of a waveguide-cavity oscillator through the use of a double-tuned circuit

The experimental 6 GHz Gunn oscillator consists of a TE101 waveguide cavity and a coupling slot, both being mechanically tunable in frequency. Fractional-bandwidth?voltage-gain products of approximately 0.2, corresponding to Qext = 10, were obtained. Comparison is made with other broadband injection-locked solid-state oscillators.     

On the recovery of a function on a circular domain

We consider the problem of estimating a function f (x, y) on the unit disk f {(x, y): x/sup 2/+y/sup 2//spl les/1}, given a discrete and noisy data recorded on a regular square grid. An estimate of f (x, y) based on a class of orthogonal and complete functions over the unit disk is proposed. This class of functions has a distinctive property of being invariant to rotation of axes about the origin of coordinates yielding therefore a rotationally invariant estimate. For-radial functions, the orthogonal set has a particularly simple form being related to the classical Legendre polynomials. We give the statistical accuracy analysis of the proposed estimate of f (x, y) in the sense of the L/sub 2/ metric. It is found that there is an inherent limitation in the precision of the estimate due to the geometric nature of a circular domain. This is explained by relating the accuracy issue to the celebrated problem in the analytic number theory called the lattice points of a circle. In fact, the obtained bounds for the mean integrated squared error are determined by the best known result so far on the problem of lattice points within the circular domain.     

On the design of a multiplexer with a common junction

Two sets of formulas for scattering parameters are presented for multiplexers having parallel and series configurations with a common junction. A new general design approach is developed for multiplexers having any response types and any number of channel filters of arbitrary degree, bandwidth, and interchannel spacing. By using these formulas and computer optimization techniques for all the element values in the channel filters, the design process results in a good match at the common input port over the transmission frequency band. Several examples including a contiguous multiplexer are given to demonstrate the design procedure.This work was supported by Air Force Systems Command under Contract F33615-84-K-1556.     

Studying the Influence of Temperature on the Operation of a Resonator of a Frequency Micromechanical Accelerometer

Russian Microelectronics - A micromechanical accelerometer (MMA) is used to measure the acceleration based on the change in frequency of the resonator when the acceleration is caused by the...     

Influence of a flatband-voltage variation along the channel on the drain characteristics of a TFT

The theoretical model for a thin film transistor (TFT) is extended to include the effect of a flatband-voltage variation along the channel as caused by the presence of mobile ions in the insulator and of slow surface traps in the semiconductor-insulator interface. The parameters determining the flatband-voltage in a common experimental situation are discussed. Finally, some approximations are given, resulting in a very simple model for the influence of mobile ions on the drain characteristics.