High thermal annealing effect on structural and optical properties of ZnO–SiO2 nanocomposite

The effect of annealing temperature on photoluminescence (PL) of ZnO–SiO₂ nanocomposite was investigated. The ZnO–SiO₂ nanocomposite was annealed at different temperatures from 600 °C to 1000 °C with a step of 100 °C. High Resolution Transmission Electron Microscope (HR-TEM) pictures showed ZnO nanoparticles of 5 nm are capped with amorphous SiO₂ matrix. Field Emission Scanning Electron Microscope (FE-SEM) pictures showed that samples exhibit spherical morphology up to 800 °C and dumbbell morphology above 800 °C. The absorption spectrum of ZnO–SiO₂ nanocomposite suffers a blue-shift from 369 nm to 365 nm with increase of temperature from 800 °C to 1000 °C. The PL spectrum of ZnO–SiO₂ nanocomposite exhibited an UV emission positioned at 396 nm. The UV emission intensity increased as the temperature increased from 600 °C to 700 °C and then decreased for samples annealed at and above 800^°C. The XRD results showed that formation of willemite phase starts at 800 °C and pure willemite phase formed at 1000 °C. The decrease of the intensity of 396 nm emission peak at 900 °C and 1000 °C is due to the collapse of the ZnO hexagonal structure. This is due to the dominant diffusion of Zn into SiO₂ at these temperatures. At 1000 °C, an emission peak at 388 nm is observed in addition to UV emission of ZnO at 396 nm and is believed to be originated from the willemite.     

Photoluminescence of phosphorous doped Ge on Si (100)

Photoluminescence (PL) of selectively grown phosphorus (P) doped germanium (Ge) is investigated. 350–600 nm thick P-doped Ge is grown on 100 nm thick P-doped Ge buffer layer, which is annealed at 800 °C before the main part of Ge deposition. In the case of Ge deposited at 325 °C, approximately two times higher PL intensity is observed by P doping of ~3.2×10¹⁹ cm⁻³. Further increase of PL intensity by a factor of 1.5 is observed by increasing the growth temperature from 325 °C to 400 °C due to improved crystal quality. Varying PH₃ partial pressure at 400 °C, red shift of the PL occurred with increasing P concentration due to higher bandgap narrowing. With increasing P concentration up to ~1.4×10¹⁹ cm⁻³ at 400 °C the PL peak intensity increases by filling electrons into the L valley and decreases due to enhanced point defect concentration and degraded crystallinity. By post-annealing at 500–800 °C, the PL intensity is further increased by a factor of 2.5 because of increased active P concentration and improved crystal quality. Reduced direct bandgap energy by introducing tensile strain is also observed.     

Atomic layer deposited zirconium oxide electron injection layer for efficient organic light emitting diodes

In this work, we demonstrate efficient polyfluorene-based light emitting diodes on which conformal, thin ZrO₂ layers, formed by atomic layer deposition at a relatively low temperature (175 °C), in order to avoid introducing any damage in the organic under layer, efficiently inject electrons from their high lying conduction band to the polymer’s LUMO. An optimal thickness of 2 nm for ZrO₂ results in a threefold improvement in luminous current efficiency compared to the reference device. The relationship between the thickness of the ZrO₂ layer and the device operational characteristics is further investigated and the possible reasons for the improved device performance are discussed based on the experimental results obtained by a combination of photoemission spectroscopy and electrical/optical measurements.     

Epitaxial growth of nonpolar GaN films on r-plane sapphire substrates by pulsed laser deposition

Single-crystalline nonpolar GaN epitaxial films have been successfully grown on r-plane sapphire (Al₂O₃) substrates by pulsed laser deposition (PLD) with an in-plane epitaxial relationship of GaN[1-100]//Al₂O₃[11-20]. The properties of the ~500 nm-thick nonpolar GaN epitaxial films grown at temperatures ranging from 450 to 880 °C are studied in detail. It is revealed that the surface morphology, the crystalline quality, and the interfacial property of as-grown ~500 nm-thick nonpolar GaN epitaxial films are firstly improved and then decreased with the growth temperature changing from 450 to 880 °C. It shows an optimized result at the growth temperature of 850 °C, and the ~500 nm-thick nonpolar GaN epitaxial films grown at 850 °C show very smooth surface with a root-mean-square surface roughness of 5.5 nm and the best crystalline quality with the full-width at half-maximum values of X-ray rocking curves for GaN(11-20) and GaN(10-11) of 0.8° and 0.9°, respectively. Additionally, there is a 1.7 nm-thick interfacial layer existing between GaN epitaxial films and r-plane sapphire substrates. This work offers an effective approach for achieving single-crystalline nonpolar GaN epitaxial films for the fabrication of nonpolar GaN-based devices.     

Nanotribological properties of ALD-processed bilayer TiO2/ZnO films

TiO₂/ZnO films grown by atomic layer deposition (ALD) demonstrated nanotribological behaviors using scratch testing. TEM profiles obtained an amorphous structure TiO₂ and nanocrystalline structure ZnO, whereas the sample has significant interface between the TiO₂/ZnO films. The experimental results show the relative XRD peak intensities are mainly contributed by a wurtzite oxide ZnO structure and no signal from the amorphous TiO₂.With respect to tribology, increased friction causes plastic deformation between the TiO₂ and ZnO films, in addition to delamination and particle loosening. The plastic deformation caused by adhesion and/or cohesion failure is reflected in the nanoscratch traces. The pile-up events at a loading penetration of 30 nm were measured at 21.8 μN for RT, 22.4 μN for 300 °C, and 36 μN for 400 °C. In comparison to the other conditions, the TiO₂/ZnO films annealed at 400 °C exhibited higher scratch resistance and friction with large debris, indicating the wear volume is reduced with increased annealing temperature and loading.     

Integration of high dielectric Ba0.5Sr0.5TiO3 films into amorphous TaSiN barrier layer structures

The high-k dielectric material (Ba,Sr)TiO₃ has been intensively investigated for possible applications in dynamic random access memory circuits. During the BST deposition process in O₂ ambient, typically at 650°C, the diffusion of oxygen through the bottom electrode into the poly Si plug must be prevented. Amorphous TaSiN films are excellent candidates as oxygen barrier layers. Ba_0.5Sr_0.5TiO₃ (BST) films with thickness of 100 nm were deposited on the electrode structure SiO₂/TaSiN/Pt. The sol–gel method was used to grow the BST films. The barrier effect for oxygen diffusion is studied in TaSiN layers with thickness of 50 nm, which were deposited by a reactive sputter process. X-ray photoemission spectroscopy results confirm that this amorphous material is a suitable barrier against oxygen diffusion at 650°C. The BST films, deposited at 650°C and post-annealed at 650°C show a dielectric constant of 100 at 100 kHz and a dissipation factor of less than 5%.     

Optical,electrical and sensing properties of In2O3 nanoparticles

In this work, various techniques such as differential scanning calorimetry-thermogravimetric analysis (DSC-TGA), Fourier transform infrared spectroscopy (FTIR), ultraviolet-visible-near infrared (UV-vis-NIR), photoluminescence (PL), >as well as electrical and sensor techniques have been used for the characterization of indium oxide (In₂O₃₎ nanoparticles. Here, we also provide insight regarding the optical and electrical characteristics of In₂O₃ nanostructures. The impact of highly sensitive and fast responding gas sensors using In₂O₃ nanostructures is also discussed. It is found that the as-prepared In₂O₃ powder is a pure single phase and is stable up to 800 °C. The size of the particles is in the range of 12 nm as determined by transmission electron microscopy (TEM). The band gap was found to vary linearly with the annealing temperature. A good sensitivity up to 400 ppm was obtained for ethanol and a mechanism is proposed.     

Direct thermal decomposition synthesis and characterization of hematite (α-Fe2O3) nanoparticles

Hematite (α-Fe₂O₃₎ nanoparticles were prepared via direct thermal decomposition method using γ-Fe₂O₃ as a wet chemically synthesized precursor. The precursor was calcinated in air at 500 °C. Samples were characterized by Thermogravimetric analysis (TGA), X-ray diffraction, Infrared, Scanning electron microscopy, Transmission electron microscopy (TEM) and Photon correlation spectroscopy (PCS). TEM and PCS analyses revealed that the average particle size of the α-Fe₂O₃ nanoparticles synthesized at 500 °C are about 18±2 nm and 50±3 nm for 1 h and 24±2 nm and 82±3 nm for 2 h, respectively. The difference in average particle size determined by PCS and TEM analysis is due to the electrostatic forces between particles, and their agglomeration in PCS analysis. Magnetic properties have been detected by a Vibrating sample magnetometry at room temperature. The α-Fe₂O₃ nanoparticles exhibited a weak ferromagnetic behavior at room temperature.     

Enhanced charge storage characteristics by ZrO2 nanocrystallites precipitated from amorphous (ZrO2)0.8(SiO2)0.2 charge trapping layer

Charge trapping memory capacitors using (ZrO₂)_0.8(SiO₂)_0.2 film as charge trapping layer and amorphous Al₂O₃ as the tunneling layer and blocking layer were fabricated for nonvolatile semiconductor memory application. The ZrO₂ nanocrystallites with a size of 3–5 nm precipitated from amorphous (ZrO₂)_0.8(SiO₂)_0.2 during rapid thermal annealing at 800 °C can serve as the storage nodes, with which a large hysteresis memory window of 7.5 V at a sweeping gate voltage of 8 V has been achieved. At 150 °C bake temperature, the memory capacitor exhibited an excellent endurance up to 10⁵ write/erase cycles, after which a small charge loss of about 12% was achieved.     

Effect of Ce doping on microstructural,morphological and optical properties of ZrO2 nanoparticles

Pure and Ce doped ZrO₂ nanostructures have been synthesized by the microwave irradiation method. The prepared nanoparticles were characterized by various analytical techniques like Thermogravimetric and Differential Thermal Analysis (TG–DTA), X-Ray Diffraction (XRD), Fourier Transform Infra-Red Spectroscopy (FTIR), Scanning Electron Microscopy (SEM), Energy Dispersive Spectrum (EDS) and Transmission Electron Microscopy (TEM). The XRD pattern of Ce doped ZrO₂ nanoparticles have been confirms that the tetragonal structure. TEM observations indicated that the average particle size of the pure ZrO₂ some particles spherical shaped and some particles agglomeration in the range of 16–44 nm. Whereas on addition of Ce agglomeration in the range of 32–56 nm. The pure ZrO₂ and Ce doped ZrO₂ nanoparticles were further characterized for their optical properties by UV–vis reflectance spectra (DRS) and Photoluminescence (PL) spectroscopy.     

Properties of In2O3 films obtained by thermal oxidation of sprayed In2S3

In₂S₃ thin films were grown by the chemical spray pyrolysis (CSP) method using indium chloride and thiourea as precursors at a molar ratio of S:In=2.5. The deposition was carried out at 350 °C on quartz substrates. The film thickness is about 1 µm. The films were then annealed for 2 h at 550, 600, 650 and 700 °C in oxygen flow. This process allows the transformation of nanocrystal In₂O₃ from In₂S₃ and the reaction is complete at 600 °C. X-ray diffraction spectra show that In₂O₃ films are polycrystalline with a cubic phase and preferentially oriented towards (222). The film grain size increases from 19 to 25 nm and RMS values increase from 9 to 30 nm. In₂O₃ films exhibit transparency over 70–85% in the visible and infrared regions due to the thickness and crystalline properties of the films. The optical band gap is found to vary in the range 3.87–3.95 eV for direct transitions. Hall effect measurements at room temperature show that resistivity is decreased from 117 to 27 Ω cm. A carrier concentration of 1×10¹⁶ cm^?3 and mobility of about 117 cm² V^?1 s^?1 are obtained at 700 °C.     

High-performance barrier using a dual-layer inorganic/organic hybrid thin-film encapsulation for organic light-emitting diodes

We report an inorganic/organic hybrid barrier that combines the alternating deposition of a layer of ZrO₂ using low temperature atomic layer deposition and a 16-μm-thick layer of UV-curable NOA63 epoxy using spin-coating. The effective water vapor transmission rates of single ZrO₂ film was improved by adding solution epoxy from 3.03 × 10⁻³ g/m² day to 1.27 × 10⁻⁴ g/m² day in the hybrid NOA63/ZrO₂/NOA63/ZrO₂ films at 20 °C and a relative humidity of 60%. In consequence, the organic light-emitting diodes encapsulated with inorganic/organic hybrid barriers were undamaged by environmental oxygen and moisture and their luminance decay time improved by a considerable extent.     

Influence of crystallinity of as-deposited Ge film on formation of quantum dot in carbon-mediated solid-phase epitaxy

The influence of crystallinity of as-deposited Ge films on Ge quantum dot (QD) formation via carbon (C)-mediated solid-phase epitaxy (SPE) was investigated. The samples were fabricated by solid-source molecular beam epitaxy (MBE). Ge/C/Si structure was formed by sequential deposition of C and Ge at deposition temperature (T_D) of 150–400 °C, and it was heat-treated in the MBE chamber at 650 °C. In the case of amorphous or a mixture of amorphous and nano-crystalline Ge film grown for T_D ≤250 °C, density of QDs increased with increasing T_D due to the increase of C-Ge bonds in Ge layer. Ge QDs with diameter of 9.2±2.1 nm were formed in the highest density of 8.3×10¹¹ cm⁻² for T_D =250 °C. On the contrary, in the case of polycrystalline Ge film for T_D ≥300 °C, density of QDs decreased slightly. This is because C incorporation into Ge layer during SPE was suppressed due to the as-crystallized columnar grains. These results suggest that as-deposited Ge film in a mixture of amorphous and nano-crystalline state is suitable to form small and dense Ge QDs via C-mediated SPE.     

The role of oxidizing agents in the structural and morphological properties of CeO2 nanoparticles

Cerium oxide (CeO₂) nanoparticles with good crystallinity and smooth surface are prepared by chemical precipitation method with different bases (NH₃, NaOH and KOH) using cerium nitrate as a source material. The effect of precipitating agents on the growth of cerium oxide nanoparticles are investigated by Photoluminescence (PL), X-ray diffraction (XRD), Fourier transform-infra red spectroscopy (FTIR), thermo gravimetric–differential thermal analysis (TG-DTA), Scanning electron microscope (SEM), Transmission electron microscope (TEM), and X-ray Photoelectron Spectroscopy (XPS). Cubic fluorite crystallites are detected by XRD pattern with preferred orientation along (1 1 1) direction. PL spectra revealed the presence of a strong and broad emission band at425 nm due to the blue shift in the visible region. The broad band below 700 cm⁻¹ is due to the envelope of the phonon band of metal oxide (Ce–O) network as revealed by the IR spectra. The TG-DTA curves revealed that the total weight loss of the samples is 19.67% when the samples are heated upto 800 °C. SEM images exhibits weakly agglomerated spheroid crystallites are obtained with the typical size in the range 10–50 nm. TEM images display that the particles are nearly spherical and square in shape with diameter 8–12 nm. XPS spectrum confirms the existence of Ce⁴⁺ oxidation states in CeO₂samples.     

Synthesis,characterization and optical band gap of La2CuO4 nanoparticles

Pure La₂CuO₄ nanoparticles were synthesized via sol–gel process using stearic acid as complexing reagent. This method consists of the formation of an organic precursor, with metallic cations homogeneously distributed throughout the matrix. The gel was calcined at 700 °C, 800 °C and 900 °C for 4 h. The as-prepared La₂CuO₄ nanoparticles were characterized by X-ray diffraction, energy dispersive X-ray spectroscopy, scanning electron microscopy, transmission electron microscopy and diffuse reflectance spectroscopy. Results show that the purity of La₂CuO₄ crystallites increases with the increase of heat treatment temperature from 700 °C to 900 °C. Optical properties show that La₂CuO₄ crystallites have broad absorption in the UV–vis region and the corresponding band gap is 1.24 eV.     

Effect of temperature on crystallite sizes of copper sulfide nanocrystals prepared from copper(II) dithiocarbamate single source precursor

We report the synthesis of CuS nanoparticles using [Cu(butdtc)₂] as single source precursor thermolysed at two different temperatures. The products were characterized by UV–vis absorption spectroscopy, X-ray diffraction, Transmission electron microscopy, scanning electron microscopy, energy dispersive X-ray analysis and atomic force microscopy. The absorption spectra of the CuS nanocrystals are blue shifted and the XRD were indexed to the hexagonal phase of CuS with nanoparticles obtained at 120 °C showing well defined crystalline structure compared to those obtained at 180 °C. Transmission electron microscopy images showed particles that are almost spherical in shapes with average crystallite sizes of 21–38 nm for CuS1 prepared at 180 °C and 3–7 nm for CuS2 prepared at 120 °C and confirms that the chosen reaction temperature determine the crystallite sizes of the nanoparticles.     

Synthesis of Sn doped ZnO/TiO2 nanocomposite film and their application to H2 gas sensing properties

Tin doped Zinc oxide/Titanium oxide nanocomposite (TZO/TiO₂) was prepared by two methods: TiO₂ nanotube (Nt) arrays are grown by anodic oxidation of titanium foil and TZO films was deposited on the TiO₂ Nt obtained by hydrothermal process. The morphological characteristics and structures of ZnO/TiO₂ and TZO/TiO₂ were examined by (scanning elecron miscroscopy) SEM, (X rays diffraction) XRD and (energy dispersive spectroscopy) EDS analysis. The diameter of TiO₂ Nts was ranged from 40 nm to 90 nm with wall thicknesses of approximately 10 nm. The anatase structure of Titania, the hexagonal Zincite crystal of zinc oxide and tetragonal structure of tin oxide were identified by XRD. EDS analysis revealed the presence of O, Zn, Ti and Sn elements in the obtained deposits.These nanocomposites have been used as active layer in hydrogen gas sensing application. The hydrogen sensing characteristics of the sensor was analyzed by measuring the sensor responses in the temperature of 100 °C and 160 °C. The highest gas response is approximately 1.48 at 160 °C.The sensing mechanism of the nanocomposite sensor was explained in terms of H₂ chimisorption on the highly active nanotube surface.     

Stabilization of a very high-k tetragonal ZrO2 phase by direct doping with germanium

The influence of Ge incorporation on the structural phase transformation of ZrO₂ films was investigated with the aim to control the resulting dielectric properties. For this reason, Ge-doped ZrO₂ thin films were prepared by atomic oxygen beam deposition at 225 °C. Admixture of low Ge concentrations (3–6.2 at.%) stabilizes the tetragonal ZrO₂ phase, and concurrently increases the permittivity to a maximum value of 37.7. Structural analysis shows that the permittivity enhancement can be explained by the increase of the tetragonal distortion upon Ge doping. The tetragonal phase is stable upon post-deposition high temperature annealing up to 1050 °C under N₂.     

Growth temperature dependence of epitaxial Gd2O3 films on Si(1 1 1)

This article reports on the epitaxy of crystalline high κ oxide Gd₂O₃ layers on Si(1 1 1) for CMOS gate application. Epitaxial Gd₂O₃ thin films have been grown by Molecular Beam Epitaxy (MBE) on Si(1 1 1) substrates between 650 and 750 °C. The structural and electrical properties were investigated depending on the growth temperature. The C–V measurements reveal that equivalent oxide thickness (EOT) equals 0.7 nm for the sample deposited at the optimal temperature of 700 °C with a relatively low leakage current of 3.6 × 10^?2 A/cm² at |V_g ? V_FB| = 1 V.     

Effects of graphite on the synthesis of 1-D single crystal In2O3 nanostructures at high temperature

This study investigated the effects of graphite powder on the growth mechanisms of one-dimensional (1-D) single-crystal indium oxide (In₂O₃) nanostructures. The study was conducted using a chemical vapor deposition (CVD) method at 1000 °C; In₂O₃ and graphite powder mixed with In₂O₃, with a weight ratio of 1:1, were used as the source material, while 2 nm-thick n-type silicon (100), coated with a gold catalyst, was used as a substrate. It was observed that nanostructures grew via a Vapor-Liquid-Solid (VLS) growth mechanism when only In₂O₃ was used, but grew via both VLS and Vapor-Solid (VS) growth mechanisms when graphite powder was used with the In₂O₃. The morphology and crystal structures of the nanostructures grown were investigated using X-Ray Diffraction (XRD), High Resolution Transmission Electron Microscopy (HR-TEM), Field Emission Scanning Electron Microscopy (FESEM) and Energy Dispersion X-Ray Spectroscopy (EDS). At room temperature (RT), all the nanostructures showed photoluminescence (PL) spectra at a wavelength of 367 nm in the UV-emission region and at wavelengths of 470 and 630 nm in the visible region.