Measurement of the stimulated emission cross section for the 4F3/2-4I13/2transition of Nd3+ in YAlO3 crystal

A method for the simultaneous measurement of the stimulated emission cross section and fluorescence lifetime by studying the relation between laser parameters and the laser relaxation oscillation frequency is discussed. The stimulated emission cross section for the ⁴F_3/2-⁴I_13/2 transition of Nd³⁺ ion in YAP crystal was measured to be (22±1)×10^-20 cm²     

Measurement of the characteristics of the optical-microwavedouble-resonance effect of the 87Rb D1line for application as an atomic frequency standard

The OMDR (optical-microwave double resonance) spectrum of ⁸⁷ Rb with the aim of using a frequency-stabilized GaAs semiconductor laser instead of an Rb lamp as a pumping source in a gas-cell-type Rb frequency standard. Natural isotope ⁸⁷Rb was sealed in a glass cell with buffer gases (Ar/N₂=1.2, total pressure=39 torr). The double resonance signal in the 5P_1/2(F=2)←5S_1/2( F=1) transition appearing at the resonance to the F=2←1 hyperfine transition of the 5S_1/2 state was detected. The optimum operational cell temperature was 56°C. The peak-to-peak frequency width of the atomic hyperfine resonance discriminator used to stabilize the microwave frequency shifts induced by detuning of the laser frequency, changes in the laser and microwave powers, and temperature drift of the cell were investigated     

Dependence of the frequency shift of the optical-microwave doubleresonance signal in the Cs D2 line on the pumpingfrequency and power of a GaAs semiconductor laser

The OMDR (optical-microwave double resonance) effect in the Cs D₂ line was studied for realizing a gas-cell-type Cs atomic frequency standard. A glass cell containing Cs with buffer gases (Ar/N₂=1.26, total pressure=39 torr) was placed in a TE₀₁₂ mode microwave cavity at a temperature of 45°C and was pumped using a GaAs semiconductor laser frequency locked to an external interferometer tuned to the 6P_3/2 (F=2,3,4)←6 S_1/2(F=3) transition. The OMDR signal appearing at the resonance to the F=4←3 hyperfine transition of the 6S_1/2 state shifted with detuning of the laser frequency and with change of the laser and microwave powers. The dependence of the shift on these variables around an optimum operating condition was obtained as, Δν_MW[Hz]=-(0.31±0.02) {1+(0.44±0.15) (ΔP_L/P_L)} Δν_L [MHz]-10(ΔV_MW/V _MW)     

Optical absorption and stimulated emission of neodymium in yttriumorthosilicate

A spectroscopic investigation of the biaxial crystal yttrium orthosilicate doped with Nd³⁺(Nd³⁺:Y₂SiO₅) has been performed. Spectrally and orientationally resolved emission cross sections necessary for the evaluation of laser performance on the Nd^{3+ 4}F_3/2-⁴I _9/2 and ⁴F_3/2-⁴I_11/2 transitions have been determined. The Judd-Ofelt theory has been applied to measured values of optical absorption line strengths to obtain the orientation averaged intensity parameters: Ω₂-3.34×10^-20 cm², Ω ₄=4.35×10^-20 cm², and Ω₆=5.60×10^-20 cm². These Judd-Ofelt intensity parameter values are significantly different from those previously reported by A.M. Tkachuk et al. Using these intensity parameters, the Nd^{3+ 4}F₂ metastable state lifetime is predicted to be 225 μs. Measured low Nd concentration ⁴F_3/2 lifetimes of 214 μs indicate a high radiative quantum efficiency. Because of the Stark level splitting of the Nd^{3+ 4}F_3/2 and ⁴I_9/2 manifolds, laser operation at twice one of the Cs atomic resonance filter acceptance wavelengths is possible     

Local fractional population measurement of the upper state 4I13/2 of an erbium-doped fiber amplifier

A method of measuring the local fractional population of the upper state ⁴I_13/2 of an erbium-doped amplifier is investigated. The local fractional population is related theoretically by EDF parameters to the local spontaneous emission (SE) power that leaks laterally from the EDF. The proportional constant between the fractional population and the detected SE power is determined experimentally by measuring saturated spontaneous emission power. The local fractional population of a 19.7 m-long EDF, pumped with a 1.48 μm light and injected with a 1.552 μm signal light, was measured by detecting the local SE power with a Ge photodiode having a diameter of 2 mm. The measured fractional population coincides with the calculated value     

A single-hop F2 propagation model forfrequencies above 30 MHz and path distances greater than 4000 km

Standard textbook explanations of ionosphere propagation suggest that 30 MHz and 4000 km are the limiting frequency and distance for single-hop communications. During the peak of sunspot cycle 22, however, there have been hundreds of reports of F₂ communications exceeding great-circle distance of 4200 km at 50 MHz. It is shown that parabolic F₂ ionospheric models explain this propagation irregularity, although textbooks and reference books fail to show that such long distances at VHF are possible     

Observation of a large number of new laser lines from12CD3F gas optically pumped with a continuouslytunable high-pressure pulsed CO2 laser

An observation is reported of a large number of new laser lines from ¹²CD₃F gas optically pumped with a continuously tunable high-pressure pulsed CO₂ laser. Making use of the coincidence of the 10 μm P and R branches of CO₂ with the v₃ and v₆ vibrational-rotational absorption bands of ¹²CD₃F, 180 laser lines were found in the wavenumber range between 8 and 55 cm^-1, all of them yet unknown; these lines are studied for characteristic properties of laser action. All laser lines are assigned as pure rotational transitions in the vibrational excited or ground states     

On the dynamics of population inversion for 3 μm Er3+lasers

A generalized model for 3-μm (⁴I_11/2 →⁴I_13/2)Er lasers is proposed. The essential energy transfer processes present in the single-doped Er ³⁺ systems (up-conversion from ⁴I_13/2, up-conversion from ⁴ I_11/2, cross-relaxation from ⁴S _3/2), as well as those present in Cr³⁺ codoped Er ³⁺ systems, are taken into account. In the frame of this model, the main features of 3 μm Er³⁺ lasers, such as long pulse or CW operation, the change of emission wavelength as a function of pumping conditions, and the effects of codoping with Ho³⁺ or Tm³⁺ ions, are explained     

Quasi-cyclic codes over Z4 and some new binarycodes

Previously, (linear) codes over Z₄ and quasi-cyclic (QC) codes (over fields) have been shown to yield useful results in coding theory. Combining these two ideas we study Z ₄-QC codes and obtain new binary codes using the usual Gray map. Among the new codes, the lift of the famous Golay code to Z₄ produces a new binary code, a (92, 2²⁴, 28)-code, which is the best among all binary codes (linear or nonlinear). Moreover, we characterize cyclic codes corresponding to free modules in terms of their generator polynomials     

Anomalous gain in an isotopically mixed CO2 laser andapplication to absolute wavelength calibration

Measurements are reported on a grating-tuned CO₂ laser, containing an isotopic mixture of ¹⁶O¹²C¹⁶ O, ¹⁶O¹²C¹⁸O, and ¹⁸O ¹²C¹⁸O. The P₆ and R ₁₄ lines of ¹⁶O¹²C¹⁶O were found to have anomalously high intensities. These anomalies are produced by the near coincidence of the transition frequencies in two distinct isotopes, permitting them to act as a single indistinguishable population. These two lines can be used to identify the rotational quantum numbers in the P and R branch spectra, thereby permitting absolute wavelength calibration to be achieved     

Connectivity properties of a packet radio network model

A model of a packet radio network in which transmitters with range R are distributed according to a two-dimensional Poisson point process with density D is examined. To ensure network connectivity, it is shown that πR²D, the expected number of nearest neighbors of a transmitter, must grow logarithmically with the area of the network. For an infinite area there exists an infinite connected component with nonzero probability if π R²D>N₀, for some critical value N₀. It is shown that 2.195<N ₀<10.526     

Capacitance allocation and its role in the performance ofdoubling-circuit pulsed gas lasers: its application to the N2laser

An investigation of the optical output for all possible combinations between the capacitances, C₁ and C ₂, in a doubling circuit N₂ laser is presented. It is shown that a maximum optical output appears when C ₁=C₂ for constant total capacitance. The maximum value increases when the total capacitance increases and the system approaches saturation for capacitance values higher than 20 nF each. This behavior of the optical energy is due to a similar behavior of the current, which becomes maximum when the best coupling of the two loops of the system is achieved through capacitance equality, and the oscillatory behavior of the system is minimized. When this equality is disturbed, either with weak (C₁>C₂ ) or strong (C₂<C₁) coupling of the system, the current and optical outputs decrease. In both cases, the undesirable oscillatory behavior of the system increases. The electric parameters R₁,L₁ of the spark-gap loop and R₂,L₂ of the laser channel loop are calculated     

Simultaneous multiple wavelength laser action in various neodymiumhost crystals

The oscillation condition of a simultaneous multiple wavelength laser has been established and used to analyze the possibility of simultaneous oscillation in various neodymium host crystals, such as Nd:YAG, Nd:YLF, Nd:BEL, and Nd:YAP crystals at the transitions from ⁴F_3/2-⁴I_13/2 and ⁴F_3/2-⁴I _11/2. It is shown that this kind of laser can be realized in all the described crystals in a pulsed state. In general, continuous wave (CW) operation, however, can only be achieved for Nd:YAP. On the basis of these results, CW simultaneous double wavelength lasing has been achieved in a Nd:YAP crystal for the first time at both 1.0795 μm and 1.314 μm     

Quarter-micrometer gate ion-implanted GaAs MESFET's with an f1 of 126 GHz

The fabrication and characterization of a 0.25-μm-gate, ion-implanted GaAs MESFET with a maximum current-gain cutoff frequency f_t of 126 GHz is reported. Extrapolation of current gains from bias-dependent S-parameters at 70-100% of I _dss yields f₁'s of 108-126 GHz. It is projected that an f₁ of 320 GHz is achievable with 0.1-μm-gate GaAs MESFETs. This demonstration of f₁'s over 100 GHz with practical 0.25-μm gate length substantially advances the high-frequency operation limits of short-gate GaAs MESFETs     

On algebraic decoding of the Z4-linearCalderbank-McGuire code

The quaternary Calderbank-McGuire (see Des., Codes Cryptogr., vol.10, no.2, 1997) code is a Z₄-linear code of length 32 which has 2³⁷ codewords and a minimum Lee distance of 12. The Gray map of this code is known to be a nonlinear binary (64, 2³⁷,12) code. The Z₄-linear Calderbank-McGuire code can correct all errors with Lee weight ⩽5. An algebraic decoding algorithm for the code is presented in this paper. Furthermore, we discuss an alternative decoding method which takes advantage of the efficient BCH decoding algorithm     

Characterization of spontaneous and stimulated emission frompraseodymium (Pr3+) ions doped into a silica-based monomodeoptical fiber

The fluorescence spectrum of praseodymium in a silica host has been investigated through the direct excitation of the ³P ₀, ¹D₂, and 1G ₄ absorption bands, which occur at around 488, 590, and 974 nm, respectively. The observed spontaneous emission consists of four main bands with peaks at 633, 707, 888, and 1080 nm. In each case the level principally responsible for these emissions was found to be 1D ₂. Stimulated emission has been seen for the first time at 888 nm for a threshold of 10 mW absorbed power. In addition, the lasing characteristics at 1080 nm have been investigated     

Stripline resonator measurements of Zs versus Hrf in YBa2Cu3O7-x thin films

A report is presented on measurements of the surface impedance, Z_S, of YBa₂Cu₃O_7-x thin films using a stripline resonator. The films were deposited on LaAlO₃ substrates by off-axis magnetron sputtering. The authors obtained Z_S as a function of frequency from 1.5 to 20 GHz, as a function of temperature from 4 K to the transition temperature (~90 K), and as a function of the RF magnetic field from zero to 300 Oe. At low temperatures the surface resistance, R _S, of the films shows a very weak dependence on the magnetic field up to 225 to 250 Oe. At 77 K, R_S is proportional to the square of the field. The penetration depth shows a much weaker dependence on the field than does R_S. The origins of the magnetic field dependence of Z_S are also discussed     

A chemically driven visible laser transition using fastnear-resonant energy transfer

Evidence is obtained which demonstrates the potential for developing purely chemical visible lasers based on rapid near-resonant energy transfer from metastable excited triplet states of germanium and silicon monoxide (a³Σ⁺,b ³Π) to select metal atoms. In this study, the Group IIIA metal atoms were chosen as the energy receptors for the energy transfer-pump sequence. Excited triplet states were generated from the Ge-O₃, Ge-N₂, Si-N₂O, and Si-NO₂ reactions; the bulk of the experimental results was obtained with a germanium-based system. The energy stored in the long-lived triplet states is transferred to pump X²P_1/2 thallium, indium, and gallium atoms to their lowest lying ² S_1/2 states. The authors observe a system of temporal behavior which suggests the creation of a population inversion producing a gain condition and forming the basis for full cavity oscillation on the Tl 7²S_1/2-6P _3/2 transition at 535 nm     

Tunable laser pumped 3 μm Ho:YAlO3 laser

The tuning characteristics of the ⁵I₆ -⁵I₇ transition in a Ho:YAlO₃ laser, intracavity pumped by a 1.079 μm Nd:YalO₃ laser, were studied. Operation on seven distinct lines between 2.844 and 3.017 μm was found, and the threshold and relative slope efficiency of each line was measured. Several of these lines were previously unreported