运营商网络能力开放研究

主要针对运营商近年来逐步完善的网络智能管道能力,提出网络能力对外开放的思路和能力开放平台的体系架构,并以移动互联网能力开放为例,详细梳理网络能力和业务场景,最后提出移动互联网能力开放的平台架构。     

移动互联网智能管道顶层设计和规模商用实践

随着移动互联网时代智能手机的快速发展和用户需求的不断变化,运营商面临着网络拥塞频发、资源分配不均和增量不增收等问题,提出依托PCC架构开展移动互联网智能管道演进网络架构的顶层设计方案,并在此基础上面向网络和市场实现了一系列技术实践应用,取得了良好成效,从而为运营商实施流量经营奠定了基础.     

PCC开放能力应用方案研究

随着运营商迈入4G时代,移动通信由传统的语音、短/彩信业务运营进入流量经营的阶段。如何更好地管控网络并创造价值,成为运营商关注的问题。3GPP中提出的PCC技术,既可以实现VoLTE呼叫策略管控,也可有效帮助运营商实现从哑管道到可控、可管的智能化管道方向演进,从业务、用户、总使用流量、位置/时间、接入类型等多个维度制定多样化的运营策略,从而获得更好收益。本文从移动运营商现有PCC网络架构和管控能力出发,以用户需求类型为导向,探讨PCC开放能力的应用方案,以求对电信运营商融合通信工程的开展提供指导意见.     

面向智能管道的网络能力开放探讨

文章从智能管道的发展需求入手,深入分析和总结了国外电信运营商部署方案,指出网络能力开放和互动将成为智能管道演进的关键阶段,并提出在3GPP PCC(Policy and Charging Control)架构的基础上构建电信网络能力开放平台的解决思路,最后对网络能力调用的应用场景进行了讨论。     

中国电信宽带网络智能管道技术实践与发展

结合智能管道相关的国际标准以及中国电信网络运营商网络发展发展现状,分析了建设智能管道的必要性,并且根据国际规范组织的架构优劣,总结出一套适合中国电信运营商的智能管道构建思路,同时,分析了中国电信现网智能管道及智能管道策略平台的架构和实现,并且根据后续的智能管道技术的发展,探讨了出了中国电信智能管道的后续发展和演进思路。     

华为信息

华为发布uTraffic：华为近日宣布推出网络流量分析系统uTraffic，该产品可实现网络流量、流向分析、网络管道质量监控，助运营商提升管道经营能力uTraffic是基于可扩展分布式架构的网络流量分析系统，通过网络物理拓扑与GIS地图、网络流量的叠加展示．实现流量可视化，协助发现流量拥塞点、     

PCC开放能力应用方案

随着运营商迈入4G时代,移动通信由传统的话音、短/彩信业务运营进入流量经营的阶段。如何更好地管控网络并创造价值,成为运营商关注的问题。3GPP中提出的PCC技术,既可以实现VoLTE呼叫策略管控,也可有效帮助运营商实现从哑管道到可控、可管的智能化管道方向演进,从业务、用户、总使用流量、位置/时间、接入类型等多个维度制定多样化的运营策略,从而获得更好收益。本文从移动运营商现有PCC网络架构和管控能力出发,以用户需求类型为导向,探讨PCC开放能力的应用方案,以求对电信运营商融合通信工程的开展提供指导意见。     

移动互联网环境下的智能管道关键技术

重点论述了移动互联网环境下智能管道的网络架构和关键技术,指出"感知、控制、开放"的智能管道能力将成为运营商网络能力提升的主要技术发展方向,感知是智能管道的基础、控制是智能管道的核心、开放是智能管道差异化服务的主要手段。     

深度内容运营提升移动数据网络价值应用分析

在移动互联网时代,运营商成为管道,各种终端应用划分了大部分市场蛋糕。文章分析了通过深度内容运营提升智能管道价值的应用和系统架构,并针对广告优化管控和定投方面的可行性进行分析,希望可以作为深度内容运营的突破口,为移动运营商提升网络盈利,并提升用户体验和满意度。     

智能控制在网络重构中的应用实现

网络重构已经成为各大运营商战略转型的重点,本文首先分析了网络重构的价值,对网络重构的关键技术进行介绍,提出面向网络重构的云化架构体系,对云化体系架构下智能模块SDN编排器和SDN控制器实现功能进行说明,进而提出网络重构环境下智能控制的应用实现场景。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

Call for Papers

正Communications—VLSI Researches and industries of telecommunications have been growing rapidly in the last 20 years and will keep their high growing pace in the next decade.The involved researches and developments cover mobile communications,highway and last-mile broadband communication,domain specific communications,and emerging D2D M2M communications.Radio communication steps into its