Influence of Deposition Parameters on Surface Evolution of Sputtered Tantalum Thin Films

Tantalum thin films with different thicknesses varying from 50 nm to 600 nm were deposited on Si substrates by radio frequency magnetron sputtering as functions of deposition temperature（Ts） and bias voltage （Ub）. Surface roughness and its dynamic evolution behavior were quantitatively investigated by using atomic force microscopy（AFM）. With increasing Ts from 300 K to 600 K, surface roughness Rrms and dynamic exponent β decreases gradually. With the increase of Ub from 0 V to -150 V, Rrms and β first decrease and then increase. The dependence of Ts and Ub on the film surface evolution has been discussed in terms of surface diffusion, mound growth, and ion impinging effect.     

PMMA-CsPbBr3薄膜的结构及光电特性

CsPbBr3是一种直接带隙宽禁带半导体,具有优异的光电性能。采用喷雾法制备了不同质量分数的聚甲基丙烯酸甲酯(PMMA)-CsPbBr3薄膜。利用原子力显微镜(AFM)和扫描电子显微镜(SEM)研究了PMMA质量分数对PMMA-CsPbBr3薄膜表面形貌的影响,利用X射线衍射(XRD)对其结构进行了表征,同时还测量了材料的透射率并给出了光致发光(PL)图像,最后制成了PMMA-CsPbBr3/Au异质结型光电探测器,研究了它们的光电特性。结果表明:掺入PMMA可以显著改善PMMA-CsPbBr3薄膜表面形貌,随着加入PMMA的质量分数的增大,CsPbBr3薄膜的表面粗糙度明显下降,均方根粗糙度从311 nm降低到69.2 nm;同时PMMACsPbBr3薄膜是择优取向的;与纯CsPbBr3薄膜相比,PMMA-CsPbBr3薄膜的透射率明显增加。通过研究制备的PMMA-CsPbBr3/Au异质结型光电探测器的I-V特性,发现随着PMMA的加入,异质结器件的暗电流降低,同时其光电流密度和稳定性增加。     

额外HCl对HVPE生长GaN性质的影响

利用氢化物气相外延 (HVPE)生长系统 ,提出并采用在生长区添加额外 HCl的方法改变 Ga N的极化生长方向获得 Ga面极化具有平滑表面的 Ga N生长技术。该法将一定量的 HCl添加到传统 HVPE生长方法中的总氮气流中 ,引入 Ga Cl和 NH3混合生长区 ,通过改变蓝宝石衬底表现的化学反应平衡 ,抑制 N面极化 Ga N的成核 ,获得了粗糙度只有一个纳米左右的具有平滑表面的高质量 Ga极化 Ga N薄膜。由于该方法是在 HVPE装置中“原位”获得了表面光滑的 Ga N,与其他方法相比 ,减少了表面损伤等     

氧气浓度对ZnO薄膜表面形貌和微结构的影响

采用反应磁控溅射技术,在SiO2基底上制备了ZnO薄膜。通过原子力显微镜(AFM)和X射线电子能谱仪(XPS)对薄膜表面形貌及微结构进行了表征,分析了氧气之体积分数φ(O2)为40%~60%时,对薄膜表面形貌和微结构的影响。结果表明:随着氧气体积分数的增大,薄膜c轴晶向生长减弱,表面形貌趋向平整,氧化反应程度增强;?(O2)为60%时,薄膜表面粗糙度约为3nm,其内部的r(Zn:O)接近1:1。     

热原子层沉积技术制备TiAlCN薄膜的特性

在Si和SiO2基底上,采用热原子层沉积技术,以四(二甲基氨基)钛(Ti(N (CH3)2)4)和三甲基铝(Al (CH3)3)为前驱体,制备TiAlCN薄膜.测试结果表明,随着基底温度的升高,膜层的沉积速率升高,电阻率降低,光学带隙由3.45 eV降低到2.00 eV,并在基底温度为300和350℃时出现了双吸收边;基底温度为350℃时,Al (CH3)3分解,使Al进入膜层与TiN和TiC形成TiAlN和TiAlC;膜层中TiN和TiC的形成,可以有效抑制膜层的自然氧化;基底温度为250和300℃时,薄膜为无定型结构,当基底温度为350℃时,有TiN晶体产生;膜层的表面粗糙度随着基底温度的升高先降低后升高,表面粗糙度的升高可能是因为在基底温度为350℃时前驱体材料的分解,使C-H键进入膜层所导致的.     

SiH_4-NH_3-N_2体系LPCVD氮化硅薄膜的生长动力学

以硅烷和氨气分别作为低压化学气相沉积(LPCVD)氮化硅(SiNx)薄膜的硅源和氮源,以高纯氮气为载气,在热壁型管式反应炉中,借助椭圆偏振仪和原子力显微镜,系统考察了工作压力、反应温度、气体原料组成等因素对SiNx薄膜沉积速率和表面形貌的影响。结果表明:SiNx薄膜的生长速率随着工作压力的增大单调增加,随着原料气中氨气与硅烷的流量之比的增大单调减小。随着反应温度的升高,沉积速率逐渐增加,在840℃附近达到最大,随后迅速降低。在适当的工艺条件下,制备的SiNx薄膜均匀、平整。较低的薄膜沉积速率有助于提高薄膜的均匀性,降低薄膜的表面粗糙度。     

Control of the structure and surface morphology of gallium nitride and aluminum nitride thin films by nitrogen background pressure in pulsed laser deposition

Thin films of AlN and GaN were grown by pulsed laser deposition on c-plane sapphire substrates. It is demonstrated that the structure and surface morphology of layers can actively be controlled by adjusting the nitrogen partial pressure during the growth. The observed trends in the structural quality of the thin films can be attributed to the changes in the surface diffusion of adatoms. It is argued that the surface diffusion of adatoms can be influenced by the collisions between the nitrogen gas molecules and the activated atoms which can reduce the kinetic energy of activated atoms and increase the rate of formation of immobile surface dimers. Through these nitrogen pressure related effects, thin films with microstructure ranging from crystalline to amorphous can be produced. The observed similar impact of nitrogen pressure on the growth of GaN and AlN thin films indicates that a pressure assisted growth procedure is generally applicable to design the surface morphology of group III-nitride thin films. A minimal surface root mean square roughness of 0.7 nm for amorphous AlN is obtained which compares well with the substrate roughness of 0.5 nm. Rutherford backscattering spectroscopy of thin films of GaN and AlN showed a large incorporation of oxygen which was found to reduce the lattice constants of GaN and AlN.     

The effect of steep sea-waves on polarization ratio at low grazingangles

A backscattering numerical model based on a two-scale representation of surface roughness is developed for one-dimensional (1D) sea surfaces at low grazing angles. The effect of the large-scale roughness component is accounted for by a numerical solution of the integral equation for surface field obtained in the forward-scattering approximation. The presence of the small-scale roughness responsible for backscattering is treated by the small-perturbation theory. The numerical simulations accomplished support the viewpoint that the significant difference between experimentally observed and numerically calculated values of polarization ratio for low grazing angles is most likely due to inadequate modeling of surface roughness. It is demonstrated that adding a few relatively minor steep-wave-like features to the surface with the standard Pierson-Moskowitz spectrum will change the average polarization ratio dramatically, bringing its theoretical values from about -20 dB to experimentally observed values of a few negative dB. Half of this increase is due to steepening of the front faces of the undulating waves. However, the other 10 dB of increase is due to diffraction effects, which enhance the scattering coefficient for the HH-polarization on the front faces of the steep waves     

磨料特性对InP晶片集群磁流变抛光效果的影响

对InP晶片进行了集群磁流变抛光实验,研究了抛光过程中磨料参数(类型、质量分数和粒径)对InP材料去除速率和表面粗糙度的影响。实验结果表明,InP晶片的去除速率随磨料硬度的增加而变大,表面粗糙度受磨料硬度和密度的综合影响;在选取的金刚石、SiC、Al2O3和SiO2等4种磨料中,使用金刚石磨料的InP去除速率最高,使用SiC磨料的InP抛光后的表面质量最好。随着SiC质量分数的增加,InP去除速率逐渐增加,但表面粗糙度先减小后增大。当使用质量分数4%、粒径3μm的SiC磨料对InP晶片进行抛光时,InP去除速率达到2.38μm/h,表面粗糙度从原始的33 nm降低到0.84 nm。     

材料形貌对碲镉汞红外焦平面器件性能的影响

碲镉汞材料表面的粗糙度对钝化膜层的质量、接触孔的光刻与刻蚀都有着显著的影响,研究其表面的粗糙度对器件性能的影响具有重要意义。在本文中,我们分别研究了碲镉汞的小平面形貌和台阶形貌对器件性能的影响,以及不同表面粗糙度的碲镉汞材料对器件制备工艺和最终性能的影响。研究表明,随着材料表面粗糙度的增加,钝化层的质量下降,接触孔的均匀性下降,且接触孔的形貌变差,I-V性能下降,最终导致器件的响应非均匀性增加,盲元数增加。     

水泥路面激光散射特性研究

为了通过激光散射特性识别不同粗糙程度水泥路面, 设计了路面粗糙度测量系统。使用千分表测量水泥路面高度分布, 计算高度均方根与相关长度。根据以上参量采用功率谱频域滤波生成随机粗糙表面以模拟水泥路面, 通过切平面近似将粗糙面离散为大量微面元, 由菲涅耳公式计算本地场, 利用蒙特卡罗方法获取不同偏振光入射条件下粗糙面双向与后向散射光强度统计平均值。基于虚拟仪器技术进行高精度自动化激光散射测量, 并根据实验数据对理论模型进行了验证。结果表明, 双向散射小粗糙度水泥路面散射光强度在镜像方向散射角40°附近具有峰值90lx, 在镜像方向两侧逐步递减, 大粗糙度水泥路面光学特性近似为朗伯体, 散射光强度在各散射角方向变化不大; 后向散射在垂直入射时, 小粗糙度水泥路面散射光强度峰值为103lx, 随散射角增大逐渐递减, 大粗糙度水泥路面具有朗伯体散射特征。此研究结果可为车辆自主驾驶方案路面信息感知提供参考。     

蓝宝石表面纳米结构随杂质靶距离的演化

使用微波回旋共振离子源刻蚀蓝宝石（C向）表面，引入金属不锈钢杂质，研究了不同靶距处蓝宝石表面自组织纳米结构的演化规律及光学性能。采用原子力显微镜来观察样品表面的形貌变化，Taylor Surf CCI 2000白光干涉表面测量仪测量蓝宝石样片表面的粗糙度；选择X射线光电子能谱对样品表面的化学成分进行了表征。实验结果表明:当离子束能量为1000 eV，束流密度为487 μA/cm2，入射角度为65°，刻蚀时间为60 min，蓝宝石样片与杂质靶距离从1 cm增加到4 cm时，样片表面出现岛状结构并逐渐演变为连续的条纹结构。同时，自组织纳米结构随靶距增加，有序性增加，纵向高度逐渐减小，空间频率基本不变。刻蚀后样品表面的金属杂质残留很少，微结构的形成对蓝宝石具有增透作用。在离子束溅射过程中，岛状结构的出现促进了样品表面条纹纳米结构的生长，破坏了纳米结构的有序性。     

磁控溅射Cu膜的表面形貌演化研究

采用磁控溅射工艺在单晶Si<111>衬底上制备300 nm厚的Cu膜,用原子力显微镜(AFM)观察薄膜表面形貌,研究工艺参数对Cu膜表面形貌的影响.结果表明:随着沉积温度、溅射功率及偏压的变化,Cu膜表面粗糙度历经了不同的演化过程.沉积粒子的扩散和晶粒生长之间的竞争决定了薄膜表面演化.     

Cell‐Tethered Ligands Modulate Bone Remodeling by Osteoblasts and Osteoclasts

The goals of the present study are to establish an in vitro co‐culture model of osteoblast and osteoclast function and to quantify the resulting bone remodeling. The bone is tissue engineered using well‐defined silk protein biomaterials in 2D and 3D formats in combination with human cells. Parathyroid hormone (PTH) and glucose‐dependent insulinotropic peptide (GIP) are selected because of their roles in bone remodeling for expression in tethered format on human mesenchymal stem cells (hMSCs). The cell‐modified biomaterial surfaces are reconstructed from scanning electron microscopy images into 3D models for quantitative measurement of surface characteristics. Increased calcium deposition and surface roughness are found in 3D surface models of silk protein films remodeled by co‐cultures containing tethered PTH, and decreased surface roughness is found for the films remodeled by tethered GIP co‐cultures. Increased surface roughness is not found in monocultures of hMSCs expressing tethered PTH, suggesting that osteoclast‐osteoblast interactions in the presence of PTH signaling are responsible for the increased mineralization. These data point towards the design of in vitro bone models in which osteoblast‐osteoclast interactions are mimicked for a better understanding of bone remodeling.     

Investigation on growth of In2S3 thin films by chemical bath deposition

Indium sulfide (In₂S₃) thin films were prepared by chemical bath deposition using the mixed aqueous solutions of indium chloride, thioacetamide and citric acid, in which citric acid was used as the complexing agent. The films were investigated by x-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), the surface roughness automatic tester and UV–visible transmission spectra, respectively. The XRD results indicate that the as-deposited films at pH 1 and 2 are composed of β-In₂S₃ phase, which crystallize in cubic structure. The SEM images show that the surface morphologies of In₂S₃ films change from nanospheres to network-like morphologies with increase in growth time. Film thicknesses linearly increase with time and reach to balance stability finally. The ion-by-ion growth mechanism is proposed.     

脉冲镀金在半导体激光器中的应用及工艺优化

为提高半导体激光器芯片的焊接成功率以及器件的性能寿命,采用脉冲电镀技术在半导体激光器芯片 P 面沉积了厚金层,详细研究了镀金液 pH 值和电流通断比对镀金层组织形貌、表面粗糙度、内应力、沉积均匀性以及粘附力的影响规律。结果表明,表面粗糙度随 pH 值的升高或通断比的提高而增大。沉积均匀性随 pH 的增大先降低后升高,而随通断比的增大而变差。pH 较大（＞10．0）或较小（＜8．5）时,镀金层粘附性均不理想。而通断比对镀金层的粘附性影响不大。不同条件下,金膜内应力均为张应力,大小为29～88 MPa。     

Effects in Surface Free Energy of Sputter-Deposited TaNx Films

TaNx thin films have attracted much attention for semiconductor integrated circuit (IC) packaging molding dies and forming tools due to their excellent hardness and thermal stability. Tantalum nitride (TaNx) thin films with TaN, TaN, TaN, TaN, and TaN were prepared using radio frequency (RF) sputter. The experimental results showed that the contact angle at 20 C go up with raising content to 119.2 at beginning, corresponding to TaN, and then drop off. In addition, the contact angle components decreased with increasing surface temperature. Because increasing surface temperature disrupts the hydrogen bonds between water and the films and water vaporize gradually. The total surface free energy (SFE) at 20 C decrease with content to raise to 39.6 mN/m(TaN) at the start, and then increase. A larger contact angle means a weaker hydrogen bonding, resulting in a lower SFE. The polar SFE component has same trend with total SFE, but the dispersive SFE component is on the contrary exactly. The polar SFE component is also lower than the dispersive SFE component. This results from hydrogen bonding being polar. The total SFE, dispersive SFE, and polar SFE of TaNx films decreased with increasing surface temperature. This is because water evaporation on the surface, disrupted hydrogen bonds, and surface entropy increase with increasing temperature. The film roughness has an obvious effect on the SFE and there is a tendency for the SFE to increase with increasing film surface roughness. SFE and surface roughness can be expressed as a function in direct ratio.     

Atomically Smooth Graphene-Based Hybrid Template for the Epitaxial Growth of Organic Semiconductor Crystals

Atomically thin 2D materials are good templates to grow organic semiconductor thin films with desirable features. However, the 2D materials typically exhibit surface roughness and spatial charge inhomogeneity due to nonuniform doping, which can affect the uniform assembly of organic thin films on the 2D materials. A hybrid template is presented for preparation of highly crystalline small-molecule organic semiconductor thin film that is fabricated by transferring graphene onto a highly ordered self-assembled monolayer. This hybrid graphene template has low surface roughness and spatially uniform doping, and it yields highly crystalline fullerene thin films with grain sizes >300 nm, which is the largest reported grain size for C₆₀ thin films on 2D materials. A graphene/fullerene/pentacene phototransistor fabricated directly on the hybrid template has five times higher photoresponsivity than a phototransistor fabricated on a conventional graphene template supported by a SiO₂ wafer.     

拟塑性流体中单气泡生成及上升周围液相流场的测量

采用激光影像技术,对羧甲基纤维素(CMC)水溶液中气泡生成过程中的形状演变进行了实时观测。利用激光多普勒测速仪(LDV)对气泡生成和上升过程中周围液相流场进行了测定,得到了气泡周围的液相时均速度分布以及在测试截面上的速度等值图。结果表明,在气泡生成初期,由于表面张力占主导作用,气泡呈球形增长;随后在浮力和和剪切稀化共同作用下,气泡逐渐被拉伸呈泪滴状;液相轴向时均速度对喷嘴中心垂线呈高斯分布,径向时均速度随着与喷嘴中心垂线距离的增加,先增加后减小。在实验范围内,轴向时均速度随高度的增加先减小后增大,其等值图则逐渐发散;而径向时均速度随高度的增加逐步减小,其等值图中极大值缓慢向两边偏移直到消失,整体沿喷嘴中心垂线呈蝴蝶"前翅膀"状。     

Initial Growth Mode,Nanostructure, and Molecular Stacking of a ZnPc:C60 Bulk Heterojunction

The initial growth modes of ZnPc films is examined, revealing the previously undescribed nanoscale crystal structure evolution and the nanograins of the ZnPc:C60 mixed layers in the thin films. Initially, the ZnPc molecules are stacked in the preferred γ(200) configuration, similar to the structures of CuPc. The ZnPc thin film growth display 2D planar to 3D island growth after the initial compressive strain had relaxed in films 7–8 MLs thick. 3D island formation decreases the prevalence of the preferred ordering in the γ(200) crystals. The ZnPc films consist of randomly distributed ellipsoid nanograins during the initial growth stages. The ellipsoid nanograins transition to an ordered state later in the growth process. Insertion of C60 changes the preferred molecular stacking of ZnPc, and β(100) forms in the ZnPc:C60 layers fabricated at room temperature, which is usually observed at high annealing temperatures (200 °C) in a single ZnPc film. The ellipsoid ZnPc nanograins also retain their shapes in the ZnPc:C60 mixed layers. The formation of β(100) and the presence of ellipsoid nanograins in the mixed layer are related to improvements relative to planar devices in the organic photovoltaic device performance.