双光栅外腔半导体激光器压窄技术的研究

介绍了利用双光栅外腔结构对650 nm半导体激光器输出激光进行选模、线宽压窄及波长调谐的研究.获得了最窄线宽＜0.01 nm的单纵模激光输出,实现了波长调谐范围约8.4 nm.     

光栅掠入射腔对ArF激光线宽的压缩和调谐

对国内首次研制成功的ArF准分子激光器实现了窄线宽可调谐运转,提出并利用光栅掠入射腔实现了线宽小于0．020nm的窄线宽和连续调谐运转,注入到放大级实现了脉冲能量大于40mJ的窄线宽可调谐激光输出。设计利用氧气吸收光谱对处于真空紫外的ArF激光实现了波长标定和线宽的准确测量。     

温控体布拉格光栅外腔单管半导体激光器

为了研究铷蒸气激光中的线宽匹配技术,基于半导体制冷片(TEC)的温度控制技术设计了窄线宽可调谐单管半导体激光器.利用半导体激光器的温度漂移特性,使LD的激光光谱中心波长在780 nm附近(工作温度-6℃),采用体布拉格光栅(VBG)外腔结构改善了LD的激光光谱,获得了功率1.448 W线宽0.13 nm的激光输出.通过调节VBG的温度,LD波长可从779.28 nm调谐至780.13 nm,调谐范围达850 pm.     

掺铥光纤激光器波长可调谐输出特性

利用1 550 nm光纤激光器搭建了一个同带泵浦环形腔掺铥光纤激光器,并对其光谱输出特性进行了研究。在1 550 nm激光泵浦下,1.6 m掺铥光纤自发辐射谱覆盖1 800~1 900 nm范围,3 dB带宽大于60 nm;通过在腔内插入隔离器,获得了线宽小于0.2 nm的激光输出,中心波长在1900 nm附近;进一步在腔内加入FP腔,获得了可调谐的窄线宽输出,光谱调谐范围达60 nm,覆盖从1 840~1 900 nm的光谱范围,激光线宽仅为0.07 nm。另外,在腔内使用通信波段用FP腔,同样获得了较宽调谐范围的窄线宽输出。输出光谱分为1 820~1 850 nm和1 865~1 915 nm两个区域,调谐范围共达80 nm。结合使用2 000 nm FP腔的可调谐光谱范围,该激光器在1 820~1 915 nm的范围都可以获得激光输出,与掺铥光线的自发辐射谱基本相符。     

30kHz窄瞬时线宽扫频激光光源的研制

搭建了一个中心波长为1340 nm、扫频速度为30 k Hz的光纤型窄瞬时线宽扫频激光光源,光源相位和光强稳定性高,扫频范围为10 nm,半峰全宽为6 nm,瞬时线宽小于0.018 nm,输出平均光功率为9.1 m W。实验扫频激光光源在傅里叶域锁模技术的基础上,使用精密度为5578、窄透射窗口的法布里-珀罗滤波器(FFP-TF)作为调谐滤波器,以腔内增益介质的自发辐射为背景光,经过单模长光纤后,到达FFP-TF并对腔内的激光进行调谐滤波,最后稳定地输出窄瞬时线宽的扫频激光。讨论了影响光源瞬时线宽的因素。搭建的窄瞬时线宽扫频激光光源具有极高的精密度和稳定性,可直接应用于对分辨率要求比较高的高速分子光谱学、分子吸收光谱学等领域。     

用于空间外差光谱仪光谱定标的窄线宽可调谐光纤激光器

针对星载CO2遥感探测空间外差光谱仪2.04 μm通道光谱定标的应用需求,研制了一台2.04 μm波段窄线宽波长可调谐的高稳定性铥钬共掺光纤激光器(THDFL).利用线型复合谐振腔的维纳效应扩大有效纵模间隔,有效抑制了多模激光振荡,输出激光线宽达7.5 MHz;通过对振动隔离和温度补偿封装的FBG施以轴向拉伸应力,该THDFL可在2040～2042.5 nm范围内调谐,且输出波长不确定度小于5×10-3 nm;使用研制的1565 nm光纤激光泵浦源,THDFL输出功率达192 mW;利用该可调谐THDFL提供的输出激光,溯源于波长标准后实现了空间外差光谱仪2.04 μm通道的光谱定标,且定标精度优于设定的指标要求.     

激光二极管阵列的窄线宽、可调谐输出

外腔反馈的激光二极管阵列(LDA)可获得窄线宽、可调谐的光谱输出。外腔由快轴准直镜、准直光学系统和闪耀光栅组成。由于阵列中各发光单元的排列弯曲导致不同波长的光原路返回,引起谱线展宽,在输出光路中加入光谱滤波器,使激光二极管阵列的线宽进一步窄化。这样,激光二极管阵列的输出光谱由自由运转时的2 nm压缩到0.12 nm,在恒定温度23℃时,实现了激光在806～818 nm的调谐,调谐范围达12 nm。     

YAG激光器泵浦钛宝石激光器和光学参量振荡器

采用一台调Q脉冲式Nd：YAG激光器同时泵浦Ti：蓝宝石激光器和光学参量振荡器（OPO），在重复频率30Hz下获得了Ti：蓝宝石可调谐激光波长为700～890nm，转换效率28．8％及440～2600nm的连续可调谐窄线宽的光参量激光输出，能量转换效率达23％。     

L-波段可调谐环形掺铒光纤激光器

报道了一种波长调谐范围达41nm(1569nm 到1610nm) 的L - 波段环形腔掺铒光纤激光 器。波长选择部分由偏振控制器和偏极器构成,通过调整环形腔内偏振控制器,改变腔内不同波长的偏振态以获得可变波长输出。高双折射光纤的引入,能够极大的压缩线宽,3dB 线宽≤0. 12nm ,在1590nm 的斜率效率为24. 7 %。实验中还对耦合器的输出耦合比与激光输出功率和调谐范围的关系进行了研究。     

405nm波段光栅外腔窄线宽蓝紫光半导体激光器

自由运行的半导体激光器由于谱线较宽而无法满足如拉曼散射等对线宽有要求的应用需求,因此获得线宽较窄、波长稳定的半导体激光器十分必要。采用反射式全息光栅作为谱线窄化元件,研究了在Littrow布局下的405 nm外腔半导体激光器。反射式全息光栅的加入,使得光栅面和半导体激光器的输出面组成耦合外腔,这在很大程度上改善了405 nm半导体激光器的线宽性能。实验结果表明,通过加入2400 line/mm的反射式全息光栅形成外腔反馈,半导体激光器的阈值电流由31 m A下降到22 m A,谱线宽度从自由运行时的1 nm减小到0.03 nm以下,实现了窄线宽输出,并且在工作电流为100 m A时,得到窄线宽半导体激光器的输出功率为28 m W,为自由运行半导体激光器输出功率的31.7%。此外,通过调节反馈光栅的角度,实现了较大电流范围的激光波长的连续调谐,最大调谐范围达3.5 nm。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.