大马士革铜互连线织构的研究

采用EBSD研究了不同线宽和退火前后Cu互连线的织构和晶界特征分布.Cu互连线均具有多重织构,其中(111)织构强度最高.沉积态样品在室温下发生了自退火现象,并出现了一些异常长大的晶粒.随高宽比降低和退火处理,Cu互连线晶粒尺寸变大,(111)织构得到加强,而具有较低应变程度的织构与(111)织构强度的比例下降.沉积态样品出现了(111)<112>和(111)<231>织构组分.退火后,出现了(111)<110>组分,而且(111)<112>和(111)<231>组分得到增强.Cu互连线以大角度晶界为主,其中具有55°～60°错配角的晶界和∑3晶界比例最高,35°～40°的错配角和∑9晶界次之.随高宽比增加和退火处理,∑3晶界比例逐渐升高,∑9晶界比例下降.     

热暴露对SiC纤维增强Ti基复合材料基体织构的影响

本文利用电子背散射衍射（EBSD）技术,研究了高温热暴露对SiC纤维增强Ti-6A1—4V复合材料基体织构的影响。结果表明,相对于制备态复合材料较为集中的晶粒取向,900℃10h热暴露后的复合材料其晶粒生长的方向既有基面方向,又有棱面方向,同时还存在锥面方向。随着热暴露时间的延长,900℃75h热暴露的复合材料基面方向的生长方式与900℃10h热暴露的复合材料情况恰好相反。另外,无论是基面方向还是棱面方向,随着热暴露时间的延长,晶粒生长的取向均有向单一取向演化的趋势,且锥面方向上的生长会逐渐消失。     

集成电路铜互连线及相关问题的研究

论述了Cu作为互连金属的优点、面临的主要问题及解决方案,介绍了制备Cu互连线的双镶嵌工艺及相关工艺问题,讨论了Cu阻挡层材料的作用及选取原则,对低k材料的研究的进展情况也了简要的介绍。     

高纯钽交叉轧制过程中微观结构和织构梯度的演变

高纯钽板在交叉轧制过程中,通过控制轧制的道次,得到了70％,82％和87％变形量的样品.应用X-射线衍射(XRD)技术测量了轧制样品1/8厚度层,1/4厚度层和中间层的宏观织构,并对样品沿厚度方向上的变形组织与微织构进行电子背散射衍射(EBSD)表征.结果表明,随着交叉轧制变形量的增加,{111} 和{100}取向晶粒的取向分裂程度增加,并且{111}取向的晶粒分裂程度高于{100}取向的晶粒.变形量为70％时,高纯钽板沿厚度方向存在强烈的微观组织和织构梯度,中间层具有强烈的{111}取向晶粒,而1/8厚度层主要为{100} 取向.随着变形量增加,高纯钽板沿厚度方向的微观组织和织构均匀性得到改善.当变形量达到87％时,表面和中心的{100} 和{111} 取向晶粒都为长条状且交互分布在一起,使得钽板沿厚度方向织构梯度得到减弱,同时获得均一的晶粒尺寸.     

冷轧铝板微织构演变的原位加热电子背散射衍射分析

采用原位加热电子背散射衍射(EBSD)技术,对冷轧铝板在回复和再结晶转变过程中的微织构演变规律进行了动态研究。轧制态铝板以铜型织构{112}〈111〉为主。再结晶转变后,以立方织构{001}〈100〉和R织构{124}〈211〉为主。在回复和再结晶过程中,{001}〈100〉晶粒和{124}〈211〉晶粒优先在形变带边缘形成和长大。晶粒长大通过晶界迁移并吞噬周围晶粒而得以发展。本研究对于理解轧制铝板的再结晶过程和机制,并有效控制轧制铝板的织构具有重要的参考价值。     

ULSI多层铜互连线的碟形坑问题研究

介绍了ULSI多层铜互连线中的碟形坑问题,对其产生的原因及影响因素进行了分析。针对影响因素中的工艺条件,分别进行了不同压力、温度、流量的试验,得到了上述各因素对抛光速率的影响。基于上述试验结果,确定了铜互连线化学机械抛光(CMP)的工艺条件,并进行了不同抛光液配比的试验,从而找出一种合适的方法,使不同材料的抛光速率达到一致,有效降低了碟形坑出现的几率。     

铜互连线静水应力的有限元模拟

本文根据工业上使用的铜大马士革互连线尺寸建立了三维有限元模型,模拟计算了铜大马士革互连线中对应力诱导形成空洞很关键的静水应力分布,对比分析了不同低k介质、阻挡层材料和互连线深宽比对静水应力的影响。研究结果表明,静水应力受k介质、阻挡层材料和互连线深宽比影响很大,静水应力在铜大马士革互连线中分布不均匀且最大应力出现在互连线表面。     

ULSI中铜互连线通孔电热性能的数值模拟

利用三维有限元模型对Cu互连线通孔进行了电流密度、温度和温度梯度的分布进行了模拟,比较了具有不同阻挡层材料的通孔内的电流密度、温度和温度梯度的分布.对于同一阻挡层材料,进行了不同通孔倾斜角的模拟.模拟结果指出,通过优化通孔倾斜角和优选阻挡层材料可有效地改善通孔内的电流密度和温度的分布,提高ULSI通孔互连的可靠性,这对通孔的设计提供了有益的参考.     

退火温度对铝互连线热应力的影响

采用二维面探测器X射线衍射(XRD)测量1μm和0.5μm厚Al互连线退火前后的残余应力.沉积态Al线均为拉应力,且随膜厚的增加而减小.沿长度方向的应力明显高于宽度方向的应力,表面法线方向应力最小.250℃退火2.5h后,互连线在各方向上的应力都减弱,其中1μm Al线应力减弱幅度高于0.5μm互连线.采用电子背散射衍射(EBSD)方法,测量退火前后Al互连线(111),(100),(110)取向晶粒的IQ值.退火后平均IQ值提高,互连线残余内应力随之减小.EBSD分析结果与XRD应力测试结果相符合.     

铜互连线内电流拥挤效应的影响

提出了一种新的测试结构(S结构),通过实验、理论推导和有限元分析,研究了铜与TaN扩散阻挡层界面的电流拥挤效应对电迁移致质量输运特性的影响.实验和有限元分析表明,铜互连线内由于电流拥挤效应的存在,在用户温度下沿特定通道输运的局部原子通量显著增大,而焦耳热所产生的温度梯度对原子通量和通量散度增大的影响则相对有限.     

高纯Ta溅射靶材微观组织与织构的EBSD研究

高纯Ta溅射靶材广泛应用于电子信息产品制造业中,其微观组织均匀性、晶粒尺寸大小及晶粒取向分布对溅射性能有着直接的影响。本文采用EBSD技术对高纯Ta溅射靶材不同区域的组织和织构进行了分析,并对高纯Ta溅射靶材的微观组织、织构组分和晶界取向差进行了研究。     

Cu/Nb微观复合线材中Cu沿径向的织构研究

本文利用电子背散射衍射(EBSD)技术,对含不同铌芯丝数的Cu/Nb微观复合线材中的Cu沿径向的织构进行了表征.结果表明:复合线材在拉拔过程中,各层织构存在差异,织构种类由表及里减少,且主要向平行于拉拔方向的〈111〉丝织构聚集;对于复合不同道次的样品,在相同部位,变形量大的线材内部织构更集中于〈111〉织构组分.     

EBSD在Nimonic 80A动态再结晶机制研究中的应用

本文采用背散射电子衍射（EBSD）技术对镍基高温合金Nimonic 80A在不同温度下热压变形后的微观结构进行表征。基于对动态再结晶过程关键参数-再结晶体积百分含量（volume fraction of DRX）、晶界取向差分布（misorientation angle distribution）和孪晶界含量（fraction of twin boundaries）的量化分析,实现对动态再结晶机制的辨别。充分发挥了EBSD大面积定量分析的优点,展示了其在量化分析金属材料动态再结晶机制中的优势。     

Textural and microstructural transformation of Cu damascene interconnects after annealing

Influence of annealing on the textural and microstructural transformation of Cu interconnects having various line widths is investigated. Two types of annealing steps have been considered here: room temperature over 6 months and 200°C for 10 min. The texture was determined by x-ray diffraction (XRD) of various cross-sectional profiles after electropolishing, and the surface, microstructure, and grain boundary character distribution (GBCD) of Cu interconnects were characterized using electron backscattered diffraction (EBSD) techniques. In order to analyze a relationship between the stress distribution and textural evolution in the samples, microstresses were calculated with decreasing line widths at 200°C using finite element modeling (FEM). In this investigation, it was found that the inhomogeneity of stress distribution in Cu interconnects is an important factor, which is necessary for understanding textural transformation after annealing. A new interpretation of textural evolution in damascene interconnects lines after annealing is suggested, based on the state of stress and the growth mechanisms of Cu electrodeposits.     

EBSD在Nimonic 80A动态再结晶机制研究中的应用

本文采用背散射电子衍射(EBSD)技术对镍基高温合金Nimonic 80A在不同温度下热压变形后的微观结构进行表征。基于对动态再结晶过程关键参数-再结晶体积百分含量(volume fraction of DRX)、晶界取向差分布(misorientation angle distribution)和孪晶界含量(fraction of twin boundaries)的量化分析,实现对动态再结晶机制的辨别。充分发挥了EBSD大面积定量分析的优点,展示了其在量化分析金属材料动态再结晶机制中的优势。     

Cu/Nb微观复合线材中Cu沿径向的织构研究

本文利用电子背散射衍射(EBSD)技术,对含不同铌芯丝数的Cu/Nb微观复合线材中的Cu沿径向的织构进行了表征。结果表明:复合线材在拉拔过程中,各层织构存在差异,织构种类由表及里减少,且主要向平行于拉拔方向的<111>丝织构聚集;对于复合不同道次的样品,在相同部位,变形量大的线材内部织构更集中于<111>织构组分。     

Influence of substrate on high-temperature behavior of copper film studied in situ by electron backscatter diffraction

Change in the in-plane orientation of (111) grains in the copper film was studied in situ by electron backscatter diffraction (EBSD) during its thermal treatment inside the scanning electron microscope (SEM). Two separate investigations were carried out each at different locations of the film. Both of the investigations showed the presence of (111) fiber texture with increased strengths of {111}〈112〉 and {111}〈110〉 orientations. During the first investigation, the {111}〈110〉 component became sharper relative to {111}〈112〉, while in the second investigation the sharpness decreased relative to {111} 〈112〉 with increasing temperature. No such changes in the in-plane orientation of the (111) grains were observed during the similar experiment carried out on the Cu film in freestanding condition. The role of silicon subtrate on influencing these changes has been proposed based on dislocation activity within the grains. The increase in the inclination of (111) planes to the specimen surface in {111}〈110〉 and {111}〈112〉 grains as a function of temperature was linked to the stress relaxation. The inclination of the (111) planes to the specimen surface leads to decrease in the sharpness of the (111) texture components. Finally, similar transformation in the texture of (111) grains in Cu damascene interconnects was investigated.     

Texture investigation of copper interconnects with a different line width

To understand the effect of line width on textural and microstructural evolution of Cu damascene interconnect, three Cu interconnects samples with different line widths are investigated. According to x-ray diffraction (XRD) results, the (111) texture is developed in all investigated lines. Scattered {111}〈112〉 and {111}〈110〉 texture components are present in 0.18-μm-width interconnect lines, and the {111}〈110〉 texture was developed in 2-μm-width interconnect lines. The directional changes of the (111) plane orientation with increased line width were investigated by XRD. In addition, microstructure and grain-boundary character distribution (GBCD) of Cu interconnect were measured using electron backscattered diffraction (EBSD) techniques. This measurement demonstrated that a bamboo-like microstructure is developed in the narrow line, and a polygranular structure is developed in the wider line. The fraction of ∑3 boundaries is increased as the line width increases but is decreased in the blanket film. A new interpretation of textural evolution in damascene interconnect lines after annealing is suggested, based on the state of stress and growth mechanisms of Cu deposits.     

Ni-W合金原位拉伸形变的电子背散射衍射分析

采用配置在场发射扫描电镜中的电子背散射衍射仪和应变微拉伸仪,统计分析了Ni—W合金在原位单轴拉伸变形过程中,显微结构、晶界分布、晶粒转动及晶体学取向的变化。在形变（ε=22％）过程中,Ni-9％W合金中的大量晶粒转动,产生滑移,并分为亚晶。应变使大角度晶界的含量增加,挛晶界明显减小,晶粒转动量达15&#176;。立方织构（001）[100]随拉伸形变量的增加而减小。