共查询到18条相似文献,搜索用时 15 毫秒
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基于PIN二极管开关工作原理,提出了一种双波段高功率低谐波单刀三掷开关组合的设计方法。开关组合集成电源变换、控制电路与两个单刀三掷开关,可实现对六个通道的控制。通过增加滤波电路的方式,使得每个通道具有低谐波特性。该开关组合在所设计的频率范围内,性能指标优良,VSWR小于1.3,低波段插入损耗小于0.4 dB,高波段插入损耗小于0.85 dB,承受功率均达到4 kW,10%占空比,具有良好的二次谐波及三次谐波特性。 相似文献
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《今日电子》2000,(2):14-16
介绍 图1所示的采用并联一串联结构PIN二极管的发送/接收开关已经有好几年的应用历史了。与只使用串行二极管的开关结构相比,它具有如下几个优点:首先,偏置电路简单,只要一条控制线;其次,这种开关只在发送情况下需要偏置;第三,在功率放大器(PA)输出功率的同时,两个二极管都将被偏置。这三个优点在高频应用中尤其重要,因为处于“off”状态的PIN二极管通常会由于本身电容的调制效应或者由于对发送信号进行整流产生的自偏置而使它成为产生谐波的器件。频率提高时,这种情况将会恶化。另一方面,处于“on”状态的PIN二极管产生的谐波失真将随着频率的增大而减小。 相似文献
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本文首先分析了功率PIN管的开关原理,并在此基础,讨论了用PIN二极管设计大功率、低插损收发组件的设计技术,给出了一些适用于工程应用的计算方法。这些方法对PIN管工程设计人员有具体的指导作用。 相似文献
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为了对二次谐波型和偏振开关型频率分辨光学开关法测量超短光脉冲的研究,利用矩阵的方法对实验系统中几种常见超短光脉冲的二次谐波-频率分辨光学开关和偏振开关-频率分辨光学开关光谱图进行了数值模拟,并采用基于矩阵的主元素广义投影算法从数值模拟的二次谐波-频率分辨光学开关光谱图中恢复了脉冲的振幅和相位,误差达到收敛的标准(G-4)。结果表明,频率分辨光学开关能够精确地测量超短光脉冲。 相似文献
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采用LTCC工艺进行手机天线开关滤波器的设计,用于手机天线开关发射端GSM850/900MHz、GSM1800/1 900MHz。整个LTCC滤波器体积为2.5mm×3.2mm×0.75mm,其中包含两个低通滤波器,用于二次谐波和三次谐波的抑制。GSM850/900通带插损小于0.75dB,带内二次谐波抑制度大于23dBc,三次谐波抑制度大于40dBc;GSM1 800/1 900通带插损小于0.7dB,带内二次谐波抑制度大于26dBc,三次谐波抑制度大于28dBc。 相似文献
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P-n-p heterojunction bipolar transistors (HBTs) have been combined with n-p-n HBTs in a push-pull amplifier in order to obtain improved linearity characteristics. Simulations of common-collector push-pull amplifiers demonstrate an improvement of 14 dB in second harmonic content at the onset of power saturation under class-B operation. Further improvement of 14 dB in the third harmonic content is shown by moving to class-AB operation at an expense of 4% decreased efficiency. A common-emitter push-pull amplifier was fabricated using both n-p-n and p-n-p HBTs with external matching and couplers. Testing of the circuit under class-AB conditions showed better third-order intermodulation (by ~9 dBc) and smaller second harmonic content (by ~11 dBc) compared with n-p-n HBTs alone. While the second harmonics were shown to combine destructively in the push-pull amplifier, total cancellation of the second harmonic was prevented by the wide difference in linearity characteristics of the n-p-n and p-n-p HBTs. In addition, the circuit produced over 2 dBm more output power than the n-p n HBT alone at 1 dB of gain compression 相似文献
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GaAs PIN二极管具有开态电阻小、截止频率高以及功率容量大的特点,采用GaAs PIN二极管制作的开关插入损耗较小、隔离度较高、并且功率的线性较好。基于河北半导体研究所GaAs PIN工艺制造了一款单刀双掷开关芯片。该开关采用单级并联结构。通过微波在片测试,在小信号条件下,6~18 GHz范围内插入损耗小于1.45 dB、隔离度大于28 dB,输入输出反射损耗小于7.5 dB。把开关装入夹具中进行功率特性测试,在连续波输入功率37 dBm,12 GHz条件下测试输出功率仅压缩0.5 dB,具有非常好的功率特性。在4英寸(100 mm)晶圆上开关的成品率较高,具有非常好的工程应用前景。 相似文献
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A highly linear and efficient differential CMOS power amplifier with harmonic control 总被引:3,自引:0,他引:3
Jongchan Kang Jehyung Yoon Kyoungjoon Min Daekyu Yu Joongjin Nam Youngoo Yang Bumman Kim 《Solid-State Circuits, IEEE Journal of》2006,41(6):1314-1322
A 2.45 GHz fully differential CMOS power amplifier (PA) with high efficiency and linearity is presented. For this work, a 0.18-/spl mu/m standard CMOS process with Cu-metal is employed and all components of the two-stage circuit except an output transformer and a few bond wires are integrated into one chip. To improve the linearity, an optimum gate bias is applied for the cancellation of the nonlinear harmonic generated by g/sub m3/ and a new harmonic termination technique at the common source node is adopted along with normal harmonic termination at the drain. The harmonic termination at the source effectively suppresses the second harmonic generated from the input and output. The amplifier delivers a 20.5dBm of P/sub 1dB/ with 17.5 dB of power gain and 37% of power-added efficiency (PAE). Linearity measurements from a two-tone test show that the power amplifier with the second harmonic termination improves the IMD3 and IMD5 over the amplifier without the harmonic termination by maximally 6 dB and 7 dB, respectively. Furthermore, the linearity improvements appear over a wide range of the power levels and the linearity is maintained under -45 dBc of IMD3 and -57dBc of IMD5 when the output power is backed off by more than 5dB from P/sub 1dB/. From the OFDM signal test, the second harmonic termination improves the error vector magnitude (EVM) by over 40% for an output power level satisfying the 4.6% EVM specification. 相似文献
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微波光电二极管(PIN)开关速度和功率容量是相互矛盾的2个指标,为同时兼顾改善2个指标,结合半导体器件特性,采取PIN管芯两极同时馈电的设计形式(即双馈电型开关),经过优化设计,研制出2 GHz~6 GHz单刀双掷PIN开关。与传统型开关电路相比,开关速度和功率容量都得到较好提升,为后续的工程应用奠定了基础。 相似文献
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根据航管应答机的应用需求,基于PIN 二极管设计了一款低插损、高隔离度、多模式的国产大功率开
关;理论分析了电路结构,介绍了器件选型以及锡金焊料烧结和金丝键合工艺设计;通过在设计中切换不同通道,实
现了不同功率模式的输出,利用ADS 软件对电路进行仿真和优化,进行了小信号和大信号下的测试。实物测试表
明,在1~2 GHz 频带内,开关插损<0. 5 dB,隔离度>60 dB,切换时间<500 ns,功率容量可达1000 W(峰值,占空比
4%),指标优异,可靠性高,具有很高的实用价值。 相似文献
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The integration of microelectromechanical systems (MEMS) switch and control integrated circuit (IC) in a single package was developed for use in next-generation portable wireless systems. This packaged radio-frequency (RF) MEMS switch exhibits an insertion loss under -0.4 dB, and isolation greater than -45 dB. This MEMS switch technology has significantly better RF characteristics than conventional PIN diodes or field effect transistor (FET) switches and consumes less power. The RF MEMS switch chip has been integrated with a high voltage charge pump plus control logic chips into a single package to accommodate the low voltage requirements in portable wireless applications. This paper discusses the package assembly process and critical parameters for integration of MEMS devices and bi-complementary metal oxide semiconductor (CMOS) control integrated circuit (IC) into a single package. 相似文献