Analysis and design of CW-LD pumped stable Q-switched laser

A high power continuous wave (CW) laser diode (LD) pumped acousto-optic Q-switched Nd:YVO4 laser is presented. A short pulse at the 1064 nm is obtained. With a repetition rate of 50 kHz, the maximum average output power of 5.72 W is achieved. The optical conversion efficiency and the slope efficiency are up to 28% and 32.4% respectively. At the repetition rate of 10 kHz and the pulse width of 16.3ns, the maximum single pulse energy of 286 μJ and the peak power of 13kW are acquired. The laser can be used as a signal source in the free-space optical communication. The output signal agrees with the modulate signal well.     

LD side-pumped intracavity frequency-doubled high Nd：YAG green laser based on acousto-optic Q-switch

A highly efficient and high power green laser generated by intracavity frequency doubling of a diode-sidepumped Q-switched Nd：YAG laser has been demonstrated. In the simple L-shaped cavity geometry,the maximum green output power of 28.5 W was obtained with a pulse width of 95 ns at a pulse repetition rate of 10 kHz by using a LBO crystal for frequency doubling,corresponding to a conversion efficiency of 11% from diode pump power to pulse green power. At a pulse repetition rate of 1 kHz,6.9 mJ of pulse energy,25 ns of pulse duration and 276 kW of peak power were obtained.     

Performance of Er3+-doped chalcogenide glass MOF amplifier applied for 1.53 μm band

A model of Er3＋-doped chalcogenide glass （GasGe20Sb10S65） microstructured optical fiber （MOF） amplifier under the excitation of 980 nm is presented to demonstrate the feasibility of it applied for 1.53 μm band optical communications. By solving the Er3＋ population rate equations and light power propagation equations, the amplifying performance of 1.53 μm band signals for Er3＋-doped chalcogenide glass MOF amplifier is investigated theoretically. The results show that the Er6＋-doped chalcogenide glass MOF exhibits a high signal gain and broad gain spectrum, and its maximum gain for small-signal input （-40 dBm） exceeds 22 dB on the 300 cm MOF under the excitation of 200 mW pump power Moreover, the relations of 1.53 μm signal gain with fiber length, input signal power and pump power are analyzed. The results indicate that the Er3＋-doped Ga5Ge20Sb10S65 MOF is a promising gain medium which can be applied to broadband amplifiers operating in the third communication window.     

All-optical ultra-wideband doublet signal source based on the cross-gain modulation in a semiconductor optical amplifier

We propose a novel scheme to generate the ultra-wideband (UWB) doublet signal pulse based on the cross-gain modulation (XGM) in a semiconductor optical amplifier (SOA). In the scheme, only an optical source and an SOA are needed. As there is only one wavelength included in the output doublet signal pulse, no time difference between the upper and down pulses is introduced during the transmission process. By using the software of Optisystem 7.0, the impacts of the optical power, the SOA current, the wavelength and the input signal pulse width on the generated doublet pulse are simulated and tudied numerically. The results show that when the pulse width of the input signal pulse is larger, the output signal pulse is better, and is insensitive to the change of wavelength. In addition, the ultra-wideband positive and negative monocycles can be generated by choosing suitable optical source power and SOA current.     

Q-switched and Mode-locked Characteristics of Cr^4＋： YAG Crystal

The passively Q-switched and mode-locked （QML） characteristics in a diode-pumped Nd： GdVO4 laser with Cr^4＋： YAG saturable absorbers have been demonstrated. A maximum average output power of 710 mW has been obtained in the QML laser. The maximum energy of a single Q-switched pulse is 52.5μJ, with the corresponding pulse width of 30 ns and the peak power of 1.75 kW, at the incident pump power of 7. 75 W. The repetition rates of the Q-switched envelope and the mode-locked laser pulse are 16.7 kHz and 680 MHz, respectively.     

Passive mode locked diode-pumped Nd：GdYVO4 laser with a GaAs absorber

A passively Q-switched mode-locked Nd:GdYVO4 laser is successfully demonstrated by using a piece of GaAs crystal grown at low temperature as the passively saturated absorber and the output coupler. Fundamental properties of the Nd: GdYVO4 laser are investigated. The maximum average output power of 3.5 W is obtained by using plainsphere when the incident pumping power is 10 W,which corresponds to an optical-optical coversion efficiency of 35%. The threshold power for the Q-switching mode-locked is 1.2 W. The maximum average output power of 1.72 W is obtained by using GaAs when the incident pumping power is 10 W,mode-locked pulse train with a repetition rate of ～113 MHz is achieved. At the incident laser pumping power of 7 W,the modulation depth is 100%.     

Passive mode locked diode-pumped Nd:GdYVO4 laser with a GaAs absorber

A passively Q-switched mode-locked Nd：GdYVO4 laser is successfully demonstrated by using a piece of GaAs crystal grown at low temperature as the passively saturated absorber and the output coupler. Fundamental properties of the Nd： GdYVO4 laser are investigated. The maximum average output power of 3.5 W is obtained by using plainsphere when the incident pumping power is 10 W, which corresponds to an optical-optical coversion efficiency of 35%. The threshold power for the Q-switching mode-locked is 1.2 W. The maximum average output power of 1.72 W is obtained by using GaAs when the incident pumping power is 10 W, mode-locked pulse train with a repetition rate of - 113 MHz is achieved. At the incident laser pumping power of 7 W, the modulation depth is 100%.     

X 波段氮化镓合成固态放大器

Based on a self-developed A1GaN/GaN HEMT with 2.5 mm gate width technology on a SiC substrate, an X-band GaN combined solid-state power amplifier module is fabricated. The module consists of an AIGaN/GaN HEMT, Wilkinson power couplers, DC-bias circuit and microstrip line. For each amplifier, we use a bipolar DC power source. Special RC networks at the input and output and a resistor between the DC power source and the gate of the transistor at the input are used for cancellation of self-oscillation and crosstalk of low-frequency of each amplifier. At the same time, branches of length 3λ/4 for Wilkinson power couplers are designed for the elimination of self-oscillation of the two amplifiers. Microstrip stub lines are used for input matching and output matching. Under Vds = 27 V, Vgs = -4.0 V, CW operating conditions at 8 GHz, the amplifier module exhibits a line gain of 5.6 dB with power added efficiency of 23.4%, and output power of 41.46 dBm （14 W）, and the power gain compression is 3 dB. Between 8 and 8.5 GHz, the variation of output power is less than 1.5 dB.     

Design and analysis of a UWB low-noise amplifier in the 0.18μm CMOS process

An ultra-wideband （3.1-10.6 GHz） low-noise amplifier using the 0.18μm CMOS process is presented. It employs a wideband filter for impedance matching. The current-reused technique is adopted to lower the power consumption. The noise contributions of the second-order and third-order Chebyshev fliers for input matching are analyzed and compared in detail. The measured power gain is 12.4-14.5 dB within the bandwidth. NF ranged from 4.2 to 5.4 dB in 3.1-10.6 GHz. Good input matching is achieved over the entire bandwidth. The test chip consumes 9 mW （without output buffer for measurement） with a 1.8 V power supply and occupies 0.88 mm^2.     

C-cut Nd-doped vanadate crystal self-Raman laser with narrow Q-switched envelope and high mode-locked repetition rate

In this paper, a passively Q-switched and mode-locked c-cut Nd-doped vanadate crystal self-Raman laser at 1.17 μm is firstly demonstrated by using Cr^4＋：YAG. Two crystals of Nd^3＋：YVO4 and Nd^3＋：Gd VO4 are adopted to generate laser, respectively. With the incident pump power of 13 W, the average output powers of 678 m W and 852 m W at 1.17 μm are obtained with the durations of Q-switched envelope of 1.8 ns and 2 ns, respectively. The mode-locked repetition rates are as high as 2.3 Hz and 2.2 GHz, respectively. As far as we know, the Q-switched envelope is the narrowest and the mode-locked repetition rate is the highest at present in this field. In addition, yellow laser output is also achieved by using the Li B3O5 frequency doubling crystal.     

双包层Er3 + /Yb3 + 共掺光纤放大器动态特性研究

基于速率方程的离散算法，实现了对双包层Er^3＋／Yb^3＋光纤放大器动态特性的分析。研究了不同信号和泵浦功率下单信道的瞬态功率、脉冲序列输出功率与增益随时间的变化以及多信道异步转移模式下输出功率和增益随时间的变化。结果表明：对于单个脉冲，在相同的泵浦功率下，输出脉冲的峰值功率取决于输入脉冲的峰值功率；在不同的泵浦功率下，输出脉冲的峰值功率取决于泵浦功率。对于脉冲序列，在达到稳定的输出前，将经历一个输出功率和增益由高到低的变化过程。对于异步转移模式的多信道脉冲，脉冲重叠时的功率和增益变化要快于非重叠时功率和增益的变化。     

被动调Q锁模掺镱光纤激光器

报道了基于偏振旋转技术等效快可饱和吸收体的被动调Q锁模光纤激光器,采用976 nm半导体激光器作为抽运源,高掺杂浓度的Yb3 光纤作为增益介质构成环形腔,通过调节抽运光功率和偏振控制器的角度得到了调Q,调Q锁模与锁模三种稳定的输出脉冲。获得的锁模脉冲中心波长为1.05μm,重复频率为20 MHz,脉冲光谱宽度为13.8 nm,抽运功率为270 mW时,锁模平均输出功率为15.82 mW;调Q频率为17.54 kHz,调Q脉冲宽度为8μs,光谱宽度为4.7 nm;调Q锁模中调Q重复频率为300 kHz。     

Gain saturation characteristics of traveling-wave semiconductorlaser amplifiers in short optical pulse amplification

The gain saturation characteristics of traveling-wave semiconductor laser amplifiers (TWAs) are theoretically and experimentally investigated. In the amplification of an isolated pulse whose repetition period is short compared to the carrier lifetime, the gain saturation is related through the carrier lifetime to the gain saturation in CW amplification. When the output pulse energy is smaller than the saturation energy, short optical pulses can be amplified without pulse shape distortion, whereas high-energy pulses suffer from pulse shape distortion due to the temporal gain variation during the pulse radiation. FWHM pulse duration variation in amplification by TWAs depends on the input pulse shape. The pulse energy gain saturation was experimentally confirmed to be independent of pulse durations and to be determined only by the pulse energy. In extremely-high-repetition-rate pulse amplification, the saturation of the pulse energy gain is determined by the average signal power     

1kHz全光纤双程结构掺Yb3+脉冲光纤放大器

以1KHz低重复频率的脉冲激光为信号光源,实验研究了全光纤双程结构的脉冲光纤放大器.利用光纤声光调制器(AOM)滤除了放大过程产生的放大自发辐射光(ASE),并测量了该ASE功率;分析了低重复频率及双程结构对放大器输出特性的影响;研究了抽运光功率对输出脉冲宽度和脉冲峰值功率的影响.在注入信号激光波长1060nm、脉冲宽度10.2ns、峰值功率0.58W时,获得放大脉冲激光的脉冲宽度7.9ns、峰值功率245.2W,对应增益26.3dB.     

激光二极管抽运掺Yb3+光纤放大器获得2.41W超短脉冲输出

对国产掺镱(Yb3 )双包层大模场面积光纤超短脉冲放大器进行了系统的实验研究。以自己搭建的脉冲宽度为2.3ps,重复频率为95MHz的全固态锁模激光器作为种子源,以976nm大功率光纤耦合激光二极管为抽运源,以1.6m国产掺Yb3 双包层大模场面积光纤为增益介质,在11.2W的入纤抽运功率下,将平均功率为100mW的脉冲种子光放大到平均功率2.41W,单脉冲能量达到了25nJ,放大后脉冲的宽度(时域宽度)和光谱都有所展宽。     

LD泵浦Cr4+,Nd3+:YAG自调Q腔内倍频激光器研究

Cr4 ，Nd3 ：YAG晶体的激光特性得到了系统研究．在LD泵浦下，Cr4 ，Nd3 ：YAG晶体获得了1.064μm的自调Q激光输出．激光平均输出功率达到3．36W，脉宽65ns，重复频率87kHz，光-光效率为15．3％．加入KTP晶体后实现了自调Q腔内倍频，获得了532nm的绿色脉冲激光输出，平均功率达到1W，脉宽210ns，重复频率47kHz，光-光效率为6％．对自调Q激光及其腔内倍频发现的现象进行了讨论．     

A pulse repetition frequency scaling law for the high repetition rate neutral barium laser

The variations in the output energy per pulse and in the average power output of the neutral Ba cyclic metal vapor laser as a function of the pulse repetition rate have been analyzed. At constant input power, the output energy per pulse is found to vary inversely as the two-thirds power of the pulse repetition frequency and so the average output power varies as the pulse repetition frequency to the one-third power up to the point where the Ba metastables do not have sufficient time to relax between pulses. Since the experiments which have been analyzed were conducted with a constant value for the laser discharge capacitance, these results imply that the output energy per pulse of this laser varies as the four-thirds power of the input voltage.     

同步抽运锁模的掺镱光纤激光器

同步抽运锁模是一种调制增益的锁模技术，就是调节抽运光的调制频率使之等于激光器纵模间隔的整数倍。通过对抽运光源半导体激光器的驱动电流进行正弦调制，实现了掺镱光纤激光器(YDFL)的同步抽运锁模。通过调整抽运激光器的调制频率，在相应于二次谐波锁模，4阶有理数谐波锁模条件下分别得到了较窄的脉冲输出。对重复频率625kHz的二次谐波锁模脉冲序列，脉冲宽度小于20ns，约为抽运光宽度的1／40；平均输出功率2．34mw，能量转换效率约为5％。     

周期性极化掺镁铌酸锂晶体光参量振荡研究

为了实现高转化率3m红外激光光参量振荡输出,采用外加脉冲电场法在厚度为1mm、掺摩尔分数为0.05的镁铌酸锂晶体上成功制备了周期为31.2m的极化光栅,理论计算并模拟了1064nm激光抽运周期极化铌酸锂晶体时,闲频光波长随温度的对应关系,并进行了实验验证。利用1064nm声光调Q Nd:YAG激光器作为抽运源对样品进行了光学参量振荡实验,其中,脉冲激光脉宽为200ns,重复频率是20kHz。在控制温度为80℃、输入抽运光功率为5.567W时,光参量振荡输出波长3m的闲频光功率为1.141W,光光转换效率达到20.1%。结果表明,通过此方法制备的周期性极化铌酸锂晶体光参量振荡,具有较高的光光转换效率。     

二硫化钼掺镱光纤激光器连续和调Q实验研究

采用环形腔结构,实现了1063 nm双包层掺镱光纤激光器的连续和调Q运转。光纤激光器连续输出结果表明,在输出透过率和泵浦功率固定时,存在最佳输出光纤长度。在3m最佳光纤长度时,得到平均输出功率270 mW,中心波长1063 nm、斜率效率为21.5 %的连续激光输出。采用自制的二硫化钼(MoS2)作为可饱和吸收体(SA),实现了掺镱光纤激光器的稳定调Q运转。当泵浦功率在185~560 mW范围内变化时,实现了稳定的调Q脉冲输出,调Q脉冲最大平均输出功率为2.18 mW,相应的脉冲宽度最窄为45 ns,最大重复频率为61.7 kHz,相应的单脉冲能量为38 nJ。脉冲宽度、重复频率、平均输出功率与泵浦功率近似呈线性关系。在实验中还发现了不稳定的被动锁模序列,并给出了合理的理论解释。