一种新的光纤光敏性的测量方法

关于光敏光纤光敏性的测量有人采用马赫-曾德尔干涉仪(MZI)的方法实现,但是该方法比较复杂,而且不直观。本文提出一种新的基于马赫-曾德尔干涉仪的光纤光敏性在线测量方法(见图1),它是由两根相同的单模光纤,连续熔拉出两个2×2定向耦合器而构成的。图1马赫-曾德尔干涉仪的基本结构图Fig.1 Schematic diagramof MZI当选取的耦合器的分光比都为1∶1时,通过理论推导可得两输出端口的峰值间隔为Δf=f2-f1=2ΔcnL,(1)式中f1,f2为输出端3,4的峰值响应速率,L为L1臂中紫外写入的长度,Δn为紫外写入后折射率的变化,c为光速。(1)式也可以写为Δλ…     

载氢光纤光致折射率变化量与曝光时间关系的测量

对普通载氢光纤光致折射率变化量与曝光时间的关系进行了实验测量研究。针对不同曝光时间导致的光栅强度不同, 分别提出了均匀光栅最大反射率测量模型和反射率零点带宽测量模型, 并分析了两个模型由于布拉格反射波长的测量误差对光致折射率变化量计算结果造成的影响。结果表明, 244 nm氩离子倍频激光器输出光功率为40 mW时, 普通载氢光纤光致折射率变化量随曝光时间总体上呈现指数分布关系Ac=1.632×10-6 t 0.76912; 在曝光时间较短时, 造成的光栅强度较弱, 光致折射率变化量有明显的指数增长趋势, 之后是一段较好的线性区域, 这时两个测量模型的结果得到了很好的印证, 随着曝光时间的继续增加, 光致折射率变化量达到饱和。     

532nm光诱导下低损耗As_2S_3光纤纤芯的光敏性及其光阻断效应现象

实验研究了低损耗硫系玻璃As_2S_3光纤的纤芯在532nm近带隙光照射下的光敏性。实验结果表明,光开始照射时其纤芯的光致折射率变化朝负方向快速减小,然后随着光照时间延长,折射率变化朝正方向缓慢恢复增加。这两个过程经历的时间和折射率变化的大小均取决于光照功率。光照功率增大到一定阈值时,在恢复过程中,光致折射率变化出现正增加,且随光照功率继续增大和曝光时间延长,折射率变化可增加到约3×10-3。另外,实验初步制备了As_2S_3光纤的布拉格光栅,曝光期间其中心波长先蓝移,后恢复并红移。同时,实验还发现,在近带隙光照下As_2S_3光纤出现光阻断效应现象,其截止效率约为55%。     

载氢光纤光折变的测量研究

报道了用光纤马赫－陈德尔干涉仪测量载氢通信光纤在１９３ｕｍＡｒＦ准分子紫外激光辐照下光致折射率变化的过程，为进一步制作光纤光栅器件和分析光折变机理提供了有用的实验数据。     

光子晶体光纤的温度特性数值模拟

提出了基于二阶透明边界条件(2nd TBC)的二维矢量伽辽金有限元法(FEM),并用其对任意横截面形状和折射率分布的光纤进行了模式分析。二阶透明边界条件与一阶透明边界条件(1st TBC)相比,提高了光纤模式限制损耗(CL)的精度,与多极法(MM)计算结果的相对误差在10%以内。对单模光子晶体光纤(PCF)温度特性进行了数值模拟,得出光子晶体光纤有效折射率neff,有效半径Reff和限制损耗随温度变化的近似公式,研究表明当折射率温度系数ξ在所研究的波长和温度范围内变化不剧烈时neff随温度升高线性增加,增加量与波长λ,光子晶体光纤空气孔直径d和孔距Λ无关;温度变化对光子晶体光纤色散特性无影响;Reff随温度升高线性减小,减小量与ξ,温度增量ΔT,Λ2,λ2成正比,与d成反比;限制损耗随温度升高线性减小,减少量与ξ,ΔT,限制损耗成正比,在大d/Λ,长波长处限制损耗随温度变化较快。     

用导波光谱学方法研究Ag~+交换玻璃波导的波导层色散性质

折射率渐变波导的波导层通常是用扩散或交换的方法将不同原子或离子扩散或交换入波导衬底表面一薄层中而获得的,其折射率可表示为n(d,λ)=n_(?)(λ)+Δn·f(d,λ) (1)f(∞,λ)=0 (2)其中n_(?)(λ)为衬底折射率,Δn为常数,Δnf(d,λ)是扩散或交换造成的拆射率增量.严格地说只有当d→∞时,波导层的折射率才与衬底折射率相同,同时波导层的色散才与衬底色散相同.然而许多文章在涉     

用Tl_2SO_4制造玻璃光波导

本文报道了用TI盐(TI_2SO_4)离子交换法制备玻璃光波导的实验结果。与用AgNO_3离子交换制备的光波导相比,波导损耗较低,折射率分布呈准阶跃型,拟合确定其折射率分布函数为费米函数,折射率增量Δn>0.13。     

基于单模光纤偏芯结构的光纤折射率传感器研究

基于迈克尔逊(Michelson)干涉仪(MI)原理,结合光纤传感器的特性,设计和实现了一种单模光纤(SMF)偏芯干涉仪结构光纤折射率传感器,并针对蔗糖溶液进行了折射率的测量。实验结果表明:这种传感器的传感范围在1.33～1.39时,特征波长与外界折射率有单调的递减变化关系,蔗糖折射率每变化0.01时,特征波长平均变化约为0.12nm。这种传感器结构简单,灵敏度较高,能够实现液体折射率与浓度变化的在线检测。     

用于模式复用的少模光纤设计及特性分析

针对模式复用技术的特点,设计了一种用于模式复用的四模光纤。通过分析不同Δn(纤芯与包层的折射率差)值与少模光纤有效面积、有效折射率、微弯损耗以及色散之间的关系,确定合适的Δn值为0.96%。仿真分析了该少模光纤的模式特性,给出了光纤的主要参数,并与已有文献的相关参数进行了比较。结果表明:所设计四种模式的光纤的有效面积达120μm2以上,损耗小于0.2dB/km,其他各项参数较好,是一种适合模式复用技术应用的少模光纤。     

基于侧边抛磨光纤光栅双反射峰的折射率传感器

介绍了一种利用具有双布拉格反射峰效应的侧边抛磨光纤光栅(SPFBG)进行折射率测量的新型光纤折射率传感器.该传感器基于由轮式侧边抛磨法加工而成的侧边抛磨光纤光栅,通过将折射率液覆盖一部分抛磨区的方法在一根光纤光栅上获得两个布拉格反射峰.这两个布拉格反射峰差值与覆盖材料折射率有关,而与光纤光栅所受应力与环境温度无关,因此用这两个布拉格反射峰差值作为测量量对折射率测量,可减小应力与环境温度的影响,实现高精度的折射率传感测量.实验表明,当维持环境温度恒定时,光纤光栅轴向应变在线性变化范围内,该传感器测量折射率时不受应力与温度变化的影响.折射率液在1.4298～1.4479范围内,该传感器的折射率测量分辨率为0.0001.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

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正Communications—VLSI Researches and industries of telecommunications have been growing rapidly in the last 20 years and will keep their high growing pace in the next decade.The involved researches and developments cover mobile communications,highway and last-mile broadband communication,domain specific communications,and emerging D2D M2M communications.Radio communication steps into its