Enhanced lateral current transport via the front N+ diffused layer of n‐type high‐efficiency back‐junction back‐contact silicon solar cells

N‐type back‐contact back‐junction solar cells were processed with the use of industrially relevant structuring technologies such as screen‐printing and laser processing. Application of the low‐cost structuring technologies in the processing of the high‐efficiency back‐contact back‐junction silicon solar cells results in a drastic increase of the pitch on the rear cell side. The pitch in the range of millimetres leads to a significant increase of the lateral base resistance. The application of a phosphorus doped front surface field (FSF) significantly reduces the lateral base resistance losses. This additional function of the phosphorus doped FSF in reducing the lateral resistance losses was investigated experimentally and by two‐dimensional device simulations. Enhanced lateral majority carrier's current transport in the front n⁺ diffused layer is a function of the pitch and the base resistivity. Experimental data show that the application of a FSF reduces the total series resistance of the measured cells with 3.5 mm pitch by 0.1 Ω cm² for the 1 Ω cm base resistivity and 1.3 Ω cm² for the 8 Ω cm base resistivity. Two‐dimensional simulations of the electron current transport show that the electron current density in the front n⁺ diffused layer is around two orders of magnitude higher than in the base of the solar cell. The best efficiency of 21.3% was obtained for the solar cell with a 1 Ω cm specific base resistivity and a front surface field with sheet resistance of 148 Ω/sq. Copyright © 2008 John Wiley & Sons, Ltd.     

High efficiency large area n‐type front junction silicon solar cells with boron emitter formed by screen printing technology

In this paper, we report on commercially viable screen printing (SP) technology to form boron emitters. A screen‐printed boron emitter and ion‐implanted phosphorus back surface field were formed simultaneously by a co‐annealing process. Front and back surfaces were passivated by chemically grown oxide capped with plasma‐enhanced chemical vapor deposition silicon nitride stack. Front and back contacts were formed by traditional SP and firing processes with silver/aluminum grid on front and local silver back contacts on the rear. This resulted in 19.6% efficient large area (239 cm²) n‐type solar cells with an open‐circuit voltage V_oc of 645 mV, short‐circuit current density J_sc of 38.6 mA/cm², and fill factor of 78.6%. This demonstrates the potential of this novel technology for production of low‐cost high‐efficiency n‐type silicon solar cells. Copyright © 2014 John Wiley & Sons, Ltd.     

Interconnection of busbar‐free back contacted solar cells by laser welding

We are presenting the module integration of busbar‐free back‐junction back‐contact (BJBC) solar cells. Our proof‐of‐concept module has a fill factor of 80.5% and a conversion efficiency on the designated area of 22.1% prior to lamination. A pulsed laser welds the Al metallization of the solar cells to an Al foil carried by a transparent substrate. The weld spots electrically contact each individual finger to the Al foil, which serves as interconnect between different cells. We produce a proof‐of‐concept module using busbar‐free cell strips of 25 × 125 mm². These are obtained by laser‐dicing of a 125 × 125 mm² BJBC solar cell. The fill factor of this module is increased by 3.5% absolute compared with the initial cell before laser‐dicing. This is achieved mainly by omitting the busbars and reduction of the finger length. The improvement of the module fill factor results in an increase in the module performance of 0.9% absolute before lamination in comparison with the efficiency of the initial 125 × 125 mm² BJBC solar cell. Hence, this interconnection scheme enables the transfer of high cell efficiencies to the module. Copyright © 2014 John Wiley & Sons, Ltd.     

Light trapping in pyramidally textured crystalline silicon solar cells using back‐side diffractive gratings

Back‐side diffractive gratings enhance a solar cell's efficiency by trapping light inside the cell and increasing the probability of absorption. We introduce a three‐dimensional, polarization‐sensitive optical model combining ray tracing and rigorous coupled‐wave analysis to investigate silicon solar cells with pyramidal front‐side texturing and back‐side gratings. Parameter optimization is performed to increase the short‐circuit current density for a linear binary grating with grating period p and height h. For the investigated 180‐µm‐thick pyramidally textured silicon solar cells, the simulation yields a maximum enhancement of the short‐circuit current density by ΔJ_SC = 1.79 mA/cm² corresponding to an absolute efficiency increase of Δη = 0.90%. Furthermore, we report on fabrication and reflectance measurements of solar cells with gratings and key challenges in achieving efficiency gains using back‐side diffractive gratings. Copyright © 2012 John Wiley & Sons, Ltd.     

Interdigitated back‐contact heterojunction solar cell concept for liquid phase crystallized thin‐film silicon on glass

We present an interdigitated back‐contact silicon heterojunction system designed for liquid‐phase crystallized thin‐film (~10 µm) silicon on glass. The preparation of the interdigitated emitter (a‐Si:H(p)) and absorber (a‐Si:H(n)) contact layers relies on the etch selectivity of doped amorphous silicon layers in alkaline solutions. The etch rates of a‐Si:H(n) and a‐Si:H(p) in 0.6% NaOH were determined and interdigitated back‐contact silicon heterojunction solar cells with two different metallizations, namely Al and ITO/Ag electrodes, were evaluated regarding electrical and optical properties. An additional random pyramid texture on the back side provides short‐circuit current density (j_SC) of up to 30.3 mA/cm² using the ITO/Ag metallization. The maximum efficiency of 10.5% is mainly limited by a low of fill factor of 57%. However, the high j_SC, as well as V_OC values of 633 mV and pseudo‐fill factors of 77%, underline the high potential of this approach. Copyright © 2015 John Wiley & Sons, Ltd.     

19% efficient n‐type Czochralski silicon solar cells with screen‐printed aluminium‐alloyed rear emitter

High and stable lifetimes recently reported for n‐type silicon materials are an important and promising prerequisite for innovative solar cells. To exploit the advantages of the excellent electrical properties of n‐type Si wafers for manufacturing simple and industrially feasible high‐efficiency solar cells, we focus on back junction n⁺np⁺ solar cells featuring an easy‐to‐fabricate full‐area screen‐printed aluminium‐alloyed rear p⁺ emitter. Independently confirmed record‐high efficiencies have been achieved on n‐type phosphorus‐doped Czochralski‐grown silicon material: 18·9% for laboratory‐type n⁺np⁺ solar cells (4 cm²) with shadow‐mask evaporated front contact grid and 17·0% for front and rear screen‐printed industrial‐type cells (100 cm²). The electrical cell parameters were found to be perfectly stable under illumination. Copyright © 2006 John Wiley & Sons, Ltd.     

High‐efficiency black silicon interdigitated back contacted solar cells on p‐type and n‐type c‐Si substrates

This work demonstrates the high potential of Al₂O₃ passivated black silicon in high‐efficiency interdigitated back contacted (IBC) solar cells by reducing surface reflectance without jeopardizing surface passivation. Very low reflectance values, below 0.7% in the 300–1000 nm wavelength range, together with striking surface recombination velocities values of 17 and 5 cm/s on p‐type and n‐type crystalline silicon substrates, respectively, are reached. The simultaneous fulfillment of requirements, low reflectance and low surface recombination, paves the way for the fabrication of high‐efficiency IBC Si solar cells using black silicon at their front surface. Outstanding photovoltaic efficiencies over 22% have been achieved both in p‐type and n‐type 9‐cm² cells. 3D simulations suggest that efficiencies of up to 24% can be obtained in the future with minor modifications in the baseline fabrication process. Copyright © 2015 John Wiley & Sons, Ltd.     

Electrodeposited zinc grid as low‐cost solar cell front contact

This paper presents an innovative low‐cost electrodeposition process to grow metallic zinc grids as a front contact for Cu(In,Ga)(Se,S)₂ (CIGS) and silicon heterojunction solar cells as an alternative to complex and expensive monolithic integration and silver screen printing techniques respectively. Morphological and electrical properties of the grid have been investigated and compared with a reference evaporated one. High quality and conformal zinc grids have been deposited showing very high growth rates up to 3.3 µm min⁻¹. Zinc grid is successfully deposited as front electrode for CIGS solar cells that are fabricated by a variety of deposition processes. Efficiency (16.3%) is achieved without antireflection coating on a 0.5 cm² co‐evaporated absorber and 14.8% on an electrodeposited one. Using electrodeposition for the growth of the doped ZnO film as well, a 14.1% efficiency is demonstrated on an all‐wet solar cell only composed of layers deposited by atmospheric methods—from absorber to metallic grid. The process is then applied to a 4.2 cm² cell as a first step toward large‐scale application. Finally, a zinc grid is deposited on a 0.5 cm² silicon heterojunction showing a promising 17% efficiency. Copyright © 2016 John Wiley & Sons, Ltd.     

Development of concentrator modules with dome‐shaped Fresnel lenses and triple‐junction concentrator cells

The status of the development of a new concentrator module in Japan is discussed based on three arguments, performance, reliability and cost. We have achieved a 26·6% peak uncorrected efficiency from a 7056 cm² 400 × module with 36 solar cells connected in series, measured in house. The peak uncorrected efficiencies of the same type of the module with 6 solar cells connected in series and 1176 cm² area measured by Fraunhofer ISE and NREL are reported as 27·4% and 24·8% respectively. The peak uncorrected efficiency for a 550× and 5445 cm² module with 20 solar cells connected in series was 28·9% in house. The temperature‐corrected efficiency of the 550 × module under optimal solar irradiation condition was 31·5 ± 1·7%. In terms of performance, the annual power generation is discussed based on a side‐by‐side evaluation against a 14% commercial multicrystalline silicon module. For reliability, some new degradation modes inherent to high concentration III‐V solar cell system are discussed and a 20‐year lifetime under concentrated flux exposure proven. The fail‐safe issues concerning the concentrated sunlight are also discussed. Moreover, the overall scenario for the reduction of material cost is discussed. Copyright © 2005 John Wiley & Sons, Ltd.     

High‐efficiency solar cells on phosphorus gettered multicrystalline silicon substrates

Measurements of the dislocation density are compared with locally resolved measurements of carrier lifetime for p‐type multicrystalline silicon. A correlation between dislocation density and carrier recombination was found: high carrier lifetimes (>100 µs) were only measured in areas with low dislocation density (<10⁵ cm⁻²), in areas of high dislocation density (>10⁶ cm⁻²) relatively low lifetimes (<20 µs) were observed. In order to remove mobile impurities from the silicon, a phosphorus diffusion gettering process was applied. An increase of the carrier lifetime by about a factor of three was observed in lowly dislocated regions whereas in highly dislocated areas no gettering efficiency was observed. To test the effectiveness of the gettering in a solar cell manufacturing process, five different multicrystalline silicon materials from four manufacturers were phosphorus gettered. Base resistivity varied between 0·5 and 5 Ω cm for the boron‐ and gallium‐doped p‐type wafers which were used in this study. The high‐efficiency solar cell structure, which has led to the highest conversion efficiencies of multicrystalline silicon solar cells to date, was used to fabricate numerous solar cells with aperture areas of 1 and 4 cm². Efficiencies in the 20% range were achieved for all materials with an average value of 18%. Best efficiencies for 1 cm² (20·3%) and 4 cm² (19·8%) cells were achieved on 0·6 and 1·5 Ω cm, respectively. This proves that multicrystalline silicon of very different material specification can yield very high efficiencies if an appropriate cell process is applied. Copyright © 2006 John Wiley & Sons, Ltd.     

Large‐area flexible,transparent, and highly luminescent films containing lanthanide (III) complex‐doped ionic liquids for efficiency enhancement of silicon‐based heterojunction solar cell

Ionic liquid (IL)‐based lanthanide luminescent materials with luminescent downshifting properties are beneficial for enhancing the photovoltaic energy conversion efficiency (η _pv) of silicon‐based solar cells. Herein, novel lanthanide (III) complex‐doped ILs have been successfully prepared by simply dissolving the complex Ln(pybox)₃ (Ln = Eu or Tb, pybox = 2,6‐bis[(4R )‐4‐phenyl‐2‐oxazolinyl]pyridine) into a bidentate organophosphine functionalized IL (1,3‐bis‐[3‐(diphenylphosphinyl)propyl]imidazolebis (trifluoromethylsulfonyl)imide), showing improved luminescence efficiency attributed to the coordination of ILs with Ln³⁺ ions and thus occurrence of the energy transfer from ILs to Ln³⁺ ions and very high absolute quantum efficiency (up to 97.22%). Large area (17 × 17 cm²) flexible, transparent, and luminescent poly(methyl methacrylate) thin films were prepared through a simple drop‐casting method and were applied as luminescent downshifting coatings to the silicon‐based heterojunction solar cells (active area: 235 cm²). In the best case using the Tb³⁺‐containing film, the η _pv of the solar cell increases from 16.676 to 16.774%.     

Thin Al2O3 passivated boron emitter of n‐type bifacial c‐Si solar cells with industrial process

We have presented thin Al₂O₃ (~4 nm) with SiN_x:H capped (~75 nm) films to effectively passivate the boron‐doped p⁺ emitter surfaces of the n‐type bifacial c‐Si solar cells with BBr₃ diffusion emitter and phosphorus ion‐implanted back surface field. The thin Al₂O₃ capped with SiN_x:H structure not only possesses the excellent field effect and chemical passivation, but also establishes a simple cell structure fully compatible with the existing production lines and processes for the low‐cost n‐type bifacial c‐Si solar cell industrialization. We have successfully achieved the large area (238.95 cm²) high efficiency of 20.89% (front) and 18.45% (rear) n‐type bifacial c‐Si solar cells by optimizing the peak sintering temperature and fine finger double printing technology. We have further shown that the conversion efficiency of the n‐type bifacial c‐Si solar cells can be improved to be over 21.3% by taking a reasonable high emitter sheet resistance. Copyright © 2017 John Wiley & Sons, Ltd.     

Experimental and simulated analysis of front versus all‐back‐contact silicon heterojunction solar cells: effect of interface and doped a‐Si:H layer defects

Front silicon heterojunction and interdigitated all‐back‐contact silicon heterojunction (IBC‐SHJ) solar cells have the potential for high efficiency and low cost because of their good surface passivation, heterojunction contacts, and low temperature fabrication processes. The performance of both heterojunction device structures depends on the interface between the crystalline silicon (c‐Si) and intrinsic amorphous silicon [(i)a‐Si:H] layer, and the defects in doped a‐Si:H emitter or base contact layers. In this paper, effective minority carrier lifetimes of c‐Si using symmetric passivation structures were measured and analyzed using an extended Shockley–Read–Hall formalism to determine the input interface parameters needed for a successful 2D simulation of fabricated baseline solar cells. Subsequently, the performance of front silicon heterojunction and IBC‐SHJ devices was simulated to determine the influence of defects at the (i)a‐Si:H/c‐Si interface and in the doped a‐Si:H layers. For the baseline device parameters, the difference between the two device configurations is caused by the emitter/base contact gap recombination and the back surface geometry of IBC‐SHJ solar cell. This work provides a guide to the optimization of both types of SHJ device performance, predicting an IBC‐SHJ solar cell efficiency of 25% for realistic material parameters. Copyright © 2013 John Wiley & Sons, Ltd.     

Back‐contacted back‐junction n‐type silicon solar cells featuring an insulating thin film for decoupling charge carrier collection and metallization geometry

In this study, back‐contacted back‐junction n‐type silicon solar cells featuring a large emitter coverage (point‐like base contacts), a small emitter coverage (point‐like base and emitter contacts), and interdigitated metal fingers have been fabricated and analyzed. For both solar cell designs, a significant reduction of electrical shading losses caused by an increased recombination in the non‐collecting base area on the rear side was obtained. Because the solar cell designs are characterized by an overlap of the B‐doped emitter and the P‐doped base with metal fingers of the other polarity, insulating thin films with excellent electrical insulation properties are required to prevent shunting in these overlapping regions. Thus, with insulating thin films, the geometry of the minority charge carrier collecting emitter diffusion and the geometry of the interdigitated metal fingers can be decoupled. In this regard, plasma‐enhanced chemical vapor deposited SiO₂ insulating thin films with various thicknesses and deposited at different temperatures have been investigated in more detail by metal‐insulator‐semiconductor structures. Furthermore, the influence of different metal layers on the insulation properties of the films has been analyzed. It has been found that by applying a SiO₂ insulating thin film with a thickness of more than 1000 nm and deposited at 350 °C to solar cells fabricated on 1 Ω cm and 10 Ω cm n‐type float‐zone grown silicon substrates, electrical shading losses could be reduced considerably, resulting in excellent short‐circuit current densities of more than 41 mA/cm² and conversion efficiencies of up to 23.0%. Copyright © 2012 John Wiley & Sons, Ltd.     

>16% thin‐film epitaxial silicon solar cells on 70‐cm2 area with 30‐µm active layer,porous silicon back reflector,and Cu‐based top‐contact metallization

We demonstrate the use of a copper‐based metallization scheme for the specific application of thin‐film epitaxial silicon wafer equivalent (EpiWE) solar cells with rear chemical vapor deposition emitter and conventional POCl₃ emitter. Thin‐film epitaxial silicon wafer equivalent cells are consisting of high‐quality epitaxial active layer of only 30 µm, beneath which a highly reflective porous silicon multilayer stack is embedded. By combining Cu‐plating metallization and narrow finger lines with an epitaxial cell architecture including the porous silicon reflector, a J_sc exceeding 32 mA/cm² was achieved. We report on reproducible cell efficiencies of >16% on >70‐cm² cells with rear epitaxial chemical vapor deposition emitters and Cu contacts. Copyright © 2011 John Wiley & Sons, Ltd.     

All‐screen‐printed back‐contact back‐junction silicon solar cells with aluminum‐alloyed emitter and demonstration of interconnection of point‐shaped metalized contacts

In the following, high‐efficiency back‐contact back‐junction silicon solar cells with aluminum‐alloyed emitter are described. First, the theoretical background for the cell concept is explained. To that purpose, the bulk lifetime and the front surface field characteristics are considered. Three different process sequences for the phosphorus‐diffused profiles on the front and back surfaces are depicted: One exhibits a shallow field, and two sequences have deeper, driven‐in profiles. For realizing high efficiencies, such cell structures must meet several prerequisites, such as firing‐stable front and rear passivations, and functional small screen‐printed Al structures. Furthermore, it must be possible to create contacts on the Si surfaces using the driven‐in P‐profiles. With such a structure, cell efficiencies of 20.0% are reached. An analysis of the series resistance and area‐weighted recombination is performed. The results are compared with the measured cell parameters. Two‐dimensional simulations show the efficiency potential when decreasing the width of the backside field and when a cell structure, which would inhibit a passivated aluminum‐alloyed p⁺‐emitter, is created. Also, an advanced concept is demonstrated where a point array of both polarities on the cell backside is interconnected externally on module level. To that purpose, the cell is soldered to a printed wiring circuit board by using a reflow soldering process. Copyright © 2013 John Wiley & Sons, Ltd.     

Recent progress of high efficiency Si thin‐film solar cells in large area

Si thin‐film solar cells are suitable to the sunbelt region due to a low temperature coefficient and to building integrated photovoltaics owing to flexible size, easily controllable transmittance, and an aesthetic design. Nevertheless, the application is limited until now due to their low conversion efficiency. We have developed a triple junction cell (a‐Si:H/a‐SiGe:H/µc‐Si:H) providing efficient light utilization. For the high efficiency, we have focused on the smoothing of high haze TCO, a low absorption window layer, a low refractive index interlayer, uniformity control of the thickness and crystalline volume fraction in the microcrystalline silicon layer, and a low absorption back reflector. Through these activities, we have achieved a world record of 13.4% stabilized efficiency in the small size cell (1 cm²) and 10.5% stabilized efficiency in the large area module (1.1 × 1.3 m²), certificated by the National Renewable Energy Laboratory and Advanced Industrial Science and Technology, respectively. This result was presented in solar cell efficiency tables (Version 41). At this moment, we have increased a stabilized efficiency of 11.2% (Output power 160 W) in the large area module. We will report on the advanced materials in detail for high efficiency. Copyright © 2014 John Wiley & Sons, Ltd.     

Simulation and fabrication of heterojunction silicon solar cells from numerical computer and hot‐wire CVD

In this paper, we will present a Pc1D numerical simulation for heterojunction (HJ) silicon solar cells, and discuss their possibilities and limitations. By means of modeling and numerical computer simulation, the influence of emitter‐layer/intrinsic‐layer/crystalline‐Si heterostructures with different thickness and crystallinity on the solar cell performance is investigated and compared with hot wire chemical vapor deposition (HWCVD) experimental results. A new technique for characterization of n‐type microcrystalline silicon (n‐µc‐Si)/intrinsic amorphous silicon (i‐a‐Si)/crystalline silicon (c‐Si) heterojunction solar cells from Pc1D is developed. Results of numerical modeling as well as experimental data obtained using HWCVD on µc‐Si (n)/a‐Si (i)/c‐Si (p) heterojunction are presented. This work improves the understanding of HJ solar cells to derive arguments for design optimization. Some simulated parameters of solar cells were obtained: the best results for J_sc = 39·4 mA/cm², V_oc = 0·64 V, FF = 83%, and η = 21% have been achieved. After optimizing the deposition parameters of the n‐layer and the H₂ pretreatment of solar cell, the single‐side HJ solar cells with J_sc = 34·6 mA/cm², V_oc = 0·615 V, FF = 71%, and an efficiency of 15·2% have been achieved. The double‐side HJ solar cell with J_sc = 34·8 mA/cm², V_oc = 0·645 V, FF = 73%, and an efficiency of 16·4% has been fabricated. Copyright © 2009 John Wiley & Sons, Ltd.     

20.1%‐efficient crystalline silicon solar cell with amorphous silicon rear‐surface passivation

We have developed a crystalline silicon solar cell with amorphous silicon (a‐Si:H) rear‐surface passivation based on a simple process. The a‐Si:H layer is deposited at 225°C by plasma‐enhanced chemical vapor deposition. An aluminum grid is evaporated onto the a‐Si:H‐passivated rear. The base contacts are formed by COSIMA (contact formation to a‐Si:H passivated wafers by means of annealing) when subsequently depositing the front silicon nitride layer at 325°C. The a‐Si:H underneath the aluminum fingers dissolves completely within the aluminum and an ohmic contact to the base is formed. This contacting scheme results in a very low contact resistance of 3.5 ±0.2 mΩ cm² on low‐resistivity (0.5 Ω cm) p‐type silicon, which is below that obtained for conventional Al/Si contacts. We achieve an independently confirmed energy conversion efficiency of 20.1% under one‐sun standard testing conditions for a 4 cm² large cell. Measurements of the internal quantum efficiency show an improved rear surface passivation compared with reference cells with a silicon nitride rear passivation. Copyright © 2005 John Wiley & Sons, Ltd.     

Proton irradiation of CdTe thin film photovoltaics deposited on cerium‐doped space glass

Space photovoltaics is dominated by multi‐junction (III‐V) technology. However, emerging applications will require solar arrays with high specific power (kW/kg), flexibility in stowage and deployment, and a significantly lower cost than the current III‐V technology offers. This research demonstrates direct deposition of thin film CdTe onto the radiation‐hard cover glass that is normally laminated to any solar cell deployed in space. Four CdTe samples, with 9 defined contact device areas of 0.25 cm², were irradiated with protons of 0.5‐MeV energy and varying fluences. At the lowest fluence, 1 × 10¹² cm⁻², the relative efficiency of the solar cells was 95%. Increasing the proton fluence to 1 × 10¹³ cm⁻² and then 1 × 10¹⁴ cm⁻² decreased the solar cell efficiency to 82% and 4%, respectively. At the fluence of 1 × 10¹³ cm⁻², carrier concentration was reduced by an order of magnitude. Solar Cell Capacitance Simulator (SCAPS) modelling obtained a good fit from a reduction in shallow acceptor concentration with no change in the deep trap defect concentration. The more highly irradiated devices resulted in a buried junction characteristic of the external quantum efficiency, indicating further deterioration of the acceptor doping. This is explained by compensation from interstitial H⁺ formed by the proton absorption. An anneal of the 1 × 10¹⁴ cm⁻² fluence devices gave an efficiency increase from 4% to 73% of the pre‐irradiated levels, indicating that the compensation was reversible. CdTe with its rapid recovery through annealing demonstrates a radiation hardness to protons that is far superior to conventional multi‐junction III‐V solar cells.