A 77 GHz mHEMT MMIC Chip Set for Automotive Radar Systems

A monolithic microwave integrated circuit (MMIC) chip set consisting of a power amplifier, a driver amplifier, and a frequency doubler has been developed for automotive radar systems at 77 GHz. The chip set was fabricated using a 0.15 µm gate‐length InGaAs/InAlAs/GaAs metamorphic high electron mobility transistor (mHEMT) process based on a 4‐inch substrate. The power amplifier demonstrated a measured small signal gain of over 20 dB from 76 to 77 GHz with 15.5 dBm output power. The chip size is 2 mm × 2 mm. The driver amplifier exhibited a gain of 23 dB over a 76 to 77 GHz band with an output power of 13 dBm. The chip size is 2.1 mm × 2 mm. The frequency doubler achieved an output power of –6 dBm at 76.5 GHz with a conversion gain of ?16 dB for an input power of 10 dBm and a 38.25 GHz input frequency. The chip size is 1.2 mm × 1.2 mm. This MMIC chip set is suitable for the 77 GHz automotive radar systems and related applications in a W‐band.     

High-bias-voltage operation of GaAs transferred-electron oscillators

Pulsed operation of epitaxial GaAs transferred-electron oscillators at a bias voltage of ten times the threshold voltage is described. The operating frequency, 14.1 GHz, was close to the transit-time frequency of 13 GHz. A maximum power output of 800 mW at 10% efficiency was obtained at 1% duty cycle. The power output and efficiency decreased with increasing duty cycle, and this decrease is attributed to the decrease in the peak/valley ratio of GaAs with increasing lattice temperature.     

Broadband Lumped-Element Integrated $N$-Way Power Dividers for Voltage Standards

This paper presents a monolithically integrated broadband lumped-element Wilkinson power divider centered at 20 GHz, which was designed and fabricated to uniformly distribute power to arrays of Josephson junctions (JJs) for superconducting voltage standards. This solution achieves a fourfold decrease in chip area, and a twofold increase in bandwidth (BW) when compared to the previous narrowband distributed circuit. A single Wilkinson divider demonstrates 0.4-dB maximum insertion loss (IL), a 10-dB match BW of 10–24.5 GHz, and a 10-dB isolation BW of 13–30 GHz. A 16-way four-level binary Wilkinson power divider network is characterized in a divider/attenuator/combiner back-to-back measurement configuration with a 10-dB match BW of 10–25 GHz. In the 15–22-GHz band of interest, the maximum IL for the 16-way divider network is 0.5 dB, with an average of 0.2 dB. The amplitude balance of the divider at 15, 19, and 22 GHz is measured to be ${pm}{hbox{1.0 dB}}$ utilizing 16 arrays of 15 600 JJs as on-chip power detectors.      

基于复合左右手传输线结构的多频高效功放

提出一种多频高效功率放大器的设计方法。采用源牵引和负载牵引确定最佳源阻抗和负载阻抗,使用复合左右手传输线实现多频匹配并抑制二次谐波。仿真结果表明,放大器在0.9GHz、1.4GHz、2.1GHz三个频点均可输出10W功率,增益为13dB,且具有60%以上的工作效率。     

A 21-26-GHz SiGe bipolar power amplifier MMIC

A three-stage 21-26-GHz medium-power amplifier fabricated in f/sub T/=120 GHz 0.2 /spl mu/m SiGe HBT technology has 19 dB small-signal gain and 15 dB gain at maximum output power. It delivers 23 dBm, 19.75% PAE at 22 GHz, and 21 dBm, 13% PAE at 24 GHz. The differential common-base topology extends the supply to BV/sub CEO/ of the transistors (1.8 V). New on-chip components, such as onchip interconnects with floating differential shields, and self-shielding four-way power combining/dividing baluns provide inter-stage coupling and single-ended I/O interfaces at the input and output. The 2.45/spl times/2.45 mm/sup 2/ MMIC was mounted as a flipchip and tested without a heatsink.     

基于GaAs PHEMT工艺的60~90GHz功率放大器MMIC

研制了一款60~90 GHz功率放大器单片微波集成电路(MMIC),该MMIC采用平衡式放大结构,在较宽的频带内获得了平坦的增益、较高的输出功率及良好的输入输出驻波比(VSWR)。采用GaAs赝配高电子迁移率晶体管(PHEMT)标准工艺进行了流片,在片测试结果表明,在栅极电压为-0.3 V、漏极电压为+3 V、频率为60~90 GHz时,功率放大器MMIC的小信号增益大于13 dB,在71~76 GHz和81~86 GHz典型应用频段,功率放大器的小信号增益均大于15 dB。载体测试结果表明,栅极电压为-0.3 V、漏极电压为+3 V、频率为60~90 GHz时,该功率放大器MMIC饱和输出功率大于17.5 dBm,在71~76 GHz和81~86 GHz典型应用频段,其饱和输出功率可达到20 dBm。该功率放大器MMIC尺寸为5.25 mm×2.10 mm。     

Microwave Varactor Tuned Transistor Oscillator Design

An analysis is made of the common base microwave transistor oscillator circuit which uses a varactor in series with the colIector to tune over octave bandwidths. Equations are derived giving the required feedback capacitances and resonating elements required for octave tuning. Normally, the collector-emitter capacitance C/sub ce/ is made approximately equal to the transistor collector capacitance C/sub c/. The emitter-base capacitance C/sub eb/ is important only at very high frequencies. It is shown that a high-Q varactor must be used and that only a limited amount of collector-base capacitance C/sub cb/ may be added if the circuit is to be resonated over an octave. The output power for such a circuit is normally about 1/5 the maximum power available from the transistor. Experimental oscillators were made from 0.5 to 1 GHz and 1 to 2 GHz which substantially verified the analysis. Using the TIXS13 transistor, an output power of 200 mW was obtained from 430 to 860 MHz tuning from -2 to -115 volts. In the 1 to 2 GHz range a TIXS13 transistor oscillator was tuned from 1.09-1.96 GHz with about 40 mW power tuning from -2 to -115 volts. By use of a lower case capacitance varactor, the 1 to 2 GHz oscillator could be made to tune over the full octave.     

InAlAs/InGaAs metamorphic HEMT with high current density and highbreakdown voltage

An In_0.3Al_0.7As/In_0.3Ga_0.7 As metamorphic power high electron mobility transistor (HEMT) grown on GaAs has been developed. This structure with 30% indium content presents several advantages over P-HEMT on GaAs and LM-HEMT on InP. A 0.15-μm gate length device with a single δ doping exhibits a state-of-the-art current gain cut-off frequency F_t value of 125 GHz at V_ds=1.5 V, an extrinsic transconductance of 650 mS/mm and a current density of 750 mA/mm associated to a high breakdown voltage of -13 V, power measurements performed at 60 GHz demonstrate a maximum output power of 240 mW/mm with 6.4-dB power gain and a power added efficiency (PAE) of 25%. These are the first power results ever reported for any metamorphic HEMT     

数字硅MOSFET微波特性的研究

利用国内先进的 0 .6μm数字 Si-MOS工艺 ,设计了射频 MOSFET,并研究了其 DC和微波特性 :I-V曲线、S参数、噪声参数和输出功率。研究发现 ,数字电路用 Si MOSFET的频率响应较高 :频率为 1 GHz时功率增益可达 1 0 d B,2 GHz时为 8d B,4GHz时为 5 d B。 1 .8GHz时 ,1分贝压缩输出功率 1 2 .8d Bm,饱和输出功率可达 1 8d Bm,且最小噪声系数为 3 .5 d B。用提取的参数设计并研制了微波 Si MOSFET低噪声放大器 ,以验证MOS器件的微波性能。此放大器由两级级联而成 ,单电源供电 ,输入输出电容隔直。在频率 1 .7～ 2 .2 GHz的范围内 ,测得放大器增益 1 5± 0 .5 d B,噪声系数 N F<3 .8d B,1分贝压缩输出功率 1 2 d Bm;在频率 1 .5～ 2 .5 GHz的范围内 ,放大器增益大于 1 3 d B。     

全离子注入C波段功率单片放大器及内匹配功率单片放大器

报道了全平面C波段功率单片放大器及四单片合成放大器研究结果。单片放大器采用全离子注入工艺，均匀性好，平均成品率40％，可靠性高。工作频率4．7—5．2GHZ，中心频率5．0GHz处输出功率2．5W，增益15dB，功率附加效率31．5％。单片放大器芯片面积2．8mm×2．0mm，四路合成的4×MMIC频率范围不变，中心频率4．95GHz处输出功率8．2W，增益13dB，功率附加效率26％，四路合成效率接近80％。实验结果与理论预测基本吻合。     

Fabrication and performance of GaAs p+n junction and Schottky barrier millimeter IMPATT's

A recently developed procedure, incorporating both preferential electrochemical etching for wafer thinning and electroplating for heat sink formation has been applied to the fabrication of Kaband (26.5-40 GHz) GaAs IMPATT's. Both epitaxially grown GaAs p⁺n junction and Cr Schottky barrier diodes have been fabricated. This procedure makes possible the batch fabrication of small area diodes (<2 times 10^{-5}cm²) over a large wafer area. The diodes have been operated both in the oscillator and stable-amplifier mode. Power, efficiency, and noise performance of the devices is reported. The p⁺n diodes, which could withstand junction temperature of over 300°C, gave the best power and efficiency. Powers as high as 680 mW with 12.4 percent efficiency at 34.8 GHz and an efficiency as high as 16 percent with 390 mW at 29.5 GHz have been achieved. The Cr Schottky diodes were unable to withstand junction temperatures in excess of 200°C and therefore produced less power despite the potentially better power handling capability. The highest power obtained from a Cr Schottky is 470 mW with 12.5 percent efficiency at 34 GHz. Comparable oscillator noise performance has been obtained with both types of diode. The best AM (DSB) double sideband NSR obtained is -135 dB in a 100 Hz window at 1.5 MHz from the carrier. An rms frequency deviation as low as 13 Hz in a 100 Hz window has been observed with a power output of 164 mW at 35.4 GHz by raising the external Q to 138. A lowest FM noise measure of 23 dB was achieved by reducing output power to 16 mW. The amplifier noise figure measured for both p⁺n and Cr Schottky diodes is 26 dB.     

GaN microwave electronics

In this paper, recent progress of AlGaN/GaN-based power high-electron-mobility transistors (HEMT's) is reviewed. Remarkable improvement in performances was obtained through adoption of high Al contents in the AlGaN layer. The mobility in these modulation-doped structures is about 1200 cm².V^-1.s^-1 at 300 K with sheet densities of over 1×10¹³ cm^-2 . The current density is over 1 A/mm with gate-drain breakdown voltages up to 280 V. F_t values up to 52 GHz have been demonstrated. Continuous wave (CW) power densities greater than 3 W/mm at 18 GHz have been achieved     

Gilbert multiplier as an active mixer with conversion gain bandwidth of up to 17 GHz

A monolithically integrated mixer based on a Gilbert cell multiplier for ultra-broadband applications has been produced in self-aligning 1 mu m silicon bipolar technology. Positive power conversion gain bandwidths for RF and LO up to 17.3 GHz and for the intermediate frequency (IF) up to 13 GHz were measured. The corresponding -3 dB frequencies are 9 GHz for RF and LO (IF=100 MHz) and 8 GHz (f/sub LO/=1 GHz) for IF.<>     

2～12 GHz CMOS超宽带低噪声放大器设计

提出了一种基于双反馈电流复用结构的新型CMOS超宽带(UWB)低噪声放大器(LNA),放大器工作在2～12 GHz的超宽带频段,详细分析了输入输出匹配、增益和噪声系数的性能。设计采用TSMC 0.18μm RF CMOS工艺,在1.4 V工作电压下,放大器的直流功耗约为13mW(包括缓冲级)。仿真结果表明,在2～12 GHz频带范围内,功率增益为15.6±1.4 dB,输入、输出回波损耗分别低于-10.4和-11.5 dB,噪声系数(NF)低于3 dB(最小值为1.96 dB),三阶交调点IIP3为-12 dBm,芯片版图面积约为712μm×614μm。     

Broadband single- and double-balanced resistive HEMT monolithicmixers

A double-balanced (DB) 3-18 GHz and a single-balanced (SB) 2-16 GHz resistive HEMT monolithic mixer have been successfully developed. The DB mixer consists of a AlGaAs/InGaAs HEMT quad, an active LO balun, and two passive baluns for RF and IF. At 16 dBm LO power, this mixer achieves the conversion losses of 7.5-9 dB for 4-13 GHz RF and 7.5-11 dB for 3-18 GHz RF. The SB mixer consists of a pair of AlGaAs/InGaAs HEMT's, an active LO balun, a passive IF balun and a passive RF power divider. At 16 dBm LO power, this mixer achieves the conversion losses of 8-10 dB for 4-15 GHz RF and 8-11 dB for 2-16 GHz RF. The simulated conversion losses of both mixers are very much in agreement with the measured results. Also, the DB mixer achieves a third-order input intercept (IP₃) of +19.5 to +27.5 dBm for a 7-18 GHz RF and 1 GHz IF at a LO drive of 16 dBm while the SB mixer achieves an input IP ₃ of +20 to +28.5 dBm for 2 to 16 GHz RF and 1 GHz IF at a 16 dBm LO power. The bandwidth of the RF and LO frequencies are approximately 6:1 for the DB mixer and 8:1 for the SB mixer. The DB mixer of this work is believed to be the first reported DB resistive HEMT MMIC mixer covering such a broad bandwidth     

Narrowband amplifier with excellent power combining efficiency

Based on a coaxial waveguide power-dividing/combining circuit, a four-device solid-state power amplifier with excellent power combining efficiency is presented. The fabricated power amplifier combining four monolithic microwave integrated circuit power amplifiers shows a 13-16.65 dB small-signal gain over a wide bandwidth of 7-13.5 GHz. The measured maximum output power at 1 dB compression is 25.4 dBm at 11 GHz, with a power-combining efficiency of 91%.     

DC-20 GHz CMOS LNA using novel multilayered transmission lines and inductors

A distributed low-noise amplifier (LNA) employing novel multilayered transmission lines and inductors is designed in a standard 0.18 mum CMOS process. The new LNA provides significant improvement in performance and size with less than 13 dB return loss from DC to 17 GHz, average gain of 8plusmn0.2 dB from DC to 20 GHz, noise figure of 3.4-5 dB from 0.5-19 GHz, power consumption of 34.2 mW, and 1.05times0.37 mm ² chip size including RF pads     

Corporate and Tandem Structures for Combining Power from 3/sup N/ and 2N+ 1 Oscillators

The output power from three Gunn oscillators was combined using a short-slot coupler in conjunction with high-level injection locking with the power combining efficiency of ahout 100 percent at 9.7 GHz. Using the 3-oscillator structure as the building block, we constructed (3/sup 2/ = )9-oscillator corporate structure and (2X4+1=)9- and (2X6+1 = )13-oscillator tandem structures to demonstrate power combining efficiencies of 92, 95, and 93 percent, respectively, at 9.6 GHz.     

50-nm T-gate metamorphic GaAs HEMTs with f/sub T/ of 440 GHz and noise figure of 0.7 dB at 26 GHz

GaAs-based transistors with the highest f/sub T/ and lowest noise figure reported to date are presented in this letter. A 50-nm T-gate In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As metamorphic high-electron mobility transistors (mHEMTs) on a GaAs substrate show f/sub T/ of 440 GHz, f/sub max/ of 400 GHz, a minimum noise figure of 0.7 dB and an associated gain of 13 dB at 26 GHz, the latter at a drain current of 185 mA/mm and g/sub m/ of 950 mS/mm. In addition, a noise figure of below 1.2 dB with 10.5 dB or higher associated gain at 26 GHz was demonstrated for drain currents in the range 40 to 470 mA/mm at a drain bias of 0.8 V. These devices are ideal for low noise and medium power applications at millimeter-wave frequencies.     

A 65 nm CMOS fully-integrated dynamic reconfigurable differential power amplifier with high gain in both bands

A fully-integrated dual-band dynamic reconfigurable differential power amplifier with high gain in 65 nm CMOS is presented. A switchable shunt LC network is proposed to implement the dual-band reconfigurable operation and achieve high gain at both low and high frequency bands, and the high quality on-chip transformers are utilized to implement input/output impedance matching and single-ended to differential conversion. Measured results show that the dual-band dynamic reconfigurable power amplifier can provide 23 dB gain at 2.15 GHz and 21 dB gain at 4.70 GHz, and achieve more than 19 dBm saturated output power at 2.15 GHz and 13 dBm saturated output power at 4.70 GHz, respectively. The die area is about 1.7 mm×2.0 mm.