采用拉普拉斯尺度混合先验的结构化近似消息传递算法

为了准确有效地实现自然图像的压缩感知重构,提出一种使用拉普拉斯尺度混合（Laplacian Scale Mixture,LSM）先验的结构化近似消息传递（Approximate Message Passing,AMP）算法.利用LSM模型构建AMP算法的高阶统计约束,将压缩感知重构问题转化为先验信息估计问题和奇异值最小化问题.首先,用LSM分布刻画相似块矩阵奇异值的稀疏性,其中该稀疏性指示了图像块的相似性,因此LSM模型被用来描述图像的非局部相似结构;然后,通过期望最大化算法估计LSM模型的尺度参数,得到可靠的先验信息;最后,由AMP算法求解奇异值最小化问题,实现图像的精确重构.实验结果表明,提出的结构化AMP算法的图像重构质量优于多种主流的压缩感知图像重构算法.     

NOMA系统基于改进的近似消息传递算法的联合信道估计与多用户检测

针对免调度非正交多址接入(Non-Orthogonal Multiple Access,NOMA)系统,多用户传输场景的上行信道估计(Channel Estimation,CE)与活动用户检测(Active User Detection,AUD)问题可被建模为压缩感知重建问题。本文提出了一种改进的近似消息传递(Approximate Message Passing,AMP)算法——阈值自适应-加约束重加权-近似消息传递(Threshold Adaptive Constrained Reweighted Approximate Message Passing,TA-CR-AMP)算法来联合解决CE和AUD问题。该算法在合适的迭代终止准则下,对AMP算法加入更新稀疏信号稀疏结构的操作,在此基础上对算法引入加约束的重加权,并令阈值自适应变化。仿真结果表明,与AMP算法相比,本文提出的算法以较低的复杂度获得了更加优越的信道估计和活跃用户检测性能。另外,本算法获得了与更加复杂的期望最大-贝叶斯AMP(Expectation Maximization Bayesian Approximate Message Passing, EM-B-AMP)算法相近的性能。      

基于SWT自适应模糊萎缩的SAR图像降斑算法

提出了基于小波域高斯混合模型贝叶斯估计模糊萎缩的SAR图像降斑算法.该算法分析了SAR图像在平稳小波变换(SWT)域中的统计模型,并用高斯混合模型对其进行描述,推导出基于贝叶斯估计的信号最小均方误差(MMSE)的模糊萎缩因子.籍此再根据小波域相邻尺度间小波系数的相关性,采用分区域模糊萎缩思想,很好地得到无斑点真实信号小波系数的估计.仿真结果表明该算法在大大抑制斑点噪声的同时,有效的保持了边缘,其性能优于改进Lee滤波,小波软阈值和SWT萎缩降斑算法.     

基于压缩感知的大功率半导体激光器1／f噪声参数估计

根据1／f噪声结构,基于压缩感知（cs）的正交匹配追踪去噪（OMPDN）算法,以小波树结构为分解条件,提取大功率半导体激光器（LDs）中的白噪声及1／f噪声。以小波基作为稀疏基,高斯随机矩阵作为测量矩阵对信号测量并进行CS的重建,滤除白噪声后准确提取1／f噪声信号进行器件参数估计。实验结果表明,本文方法对高斯白噪声混杂...     

基于K-SVD算法改进BayesShrink小波阈值去噪

提出了一种基于BayesShrink小波阈值去噪算法和稀疏字典学习算法(K-SVD)相结合的图像去噪算法.针对现有的小波去噪算法只处理了细节子带系数,而没有处理近似子带的系数最终导致去噪效果带有局限性的问题,在实际应用中,噪声不仅改变了细节子带系数同时还改变了近似子带的系数,提出了使用K-SVD算法处理图像小波变换近似子带系数以改进现有小波阈值图像去噪算法的效果的缺陷,仿真实验结果表明:改进后的算法能够有效的去除图像的高斯噪声,提高图像的峰值信噪比,明显的改善图像的视觉效果.     

基于三阶统计量的欠定盲源分离方法

盲源分离(BSS)在缺失源信号信息及信息混合方式信息的情况下,仅利用观测信号实现源信号恢复,是信号处理中的重要手段。欠定盲源分离(UBSS)中观测信号少于源信号数目,因此,相较于正定/超定情形,其更接近现实情况。然而,观测信号往往受到噪声干扰,传统基于2阶统计量和信号稀疏性的欠定盲源分离结果对噪声较为敏感。鉴于3阶统计量在处理对称分布噪声时的优势,该文利用观测信号的3阶统计信息实现混合矩阵的估计。考虑到源信号的自相关特性,计算多时延下观测信号一系列的3阶统计信息,并堆叠成4阶张量,进而将混合矩阵估计问题转化为4阶张量的典范双峰分解问题。该文进一步利用广义高斯模型和期望最大算法实现源信号的恢复。1000次蒙特卡罗实验表明该文算法能够有效抑制噪声的影响。针对3×4混合模型,当信噪比为15 dB时,该文算法对混合矩阵的平均估计误差达到–20.35 dB,所恢复出的源信号与真实源信号之间的平均绝对相关系数达0.84,与现有方法相比,取得了最好的分离结果。     

基于重加权近似消息传递算法的稀疏信道估计

基于近似消息传递(AMP)算法,提出了一种重加权近似消息传递(Rw AMP)算法用于稀疏信道估计,该算法增加了重加权过程与衰减机制。在信号重构时加入权重更新过程,待重构信号中较大的元素几乎不变,较小元素迅速降低为零,从而提高正确重构概率。其次,当稀疏信道估计的观测矩阵为Toeplitz矩阵时,为了提高AMP类算法收敛性,文中加入衰减机制。仿真结果表明,在相同复杂度的条件下,Rw AMP算法的信号重构性能优于基追踪(BP)算法和AMP算法。     

基于小波变换的高斯曲线拟合在峰值定位中的应用

针对低速率解调仪采样获得光纤布喇格光栅反射光谱解调精度低的缺点,采用了一种基于小波变换的高斯(WTG)曲线拟合方法。利用小波变换对反射光谱信号进行分解,对小波细节分量进行阈值量化处理,在此基础上,运用处理后的细节分量和近似分量对信号进行重构;然后对重构后的信号插值并进行高斯曲线拟合,使用Levenberg-Marquardt(LM)算法优化高斯拟合系数。仿真实验结果表明:与直接寻峰算法、高斯拟合算法相比,WTG算法的峰值定位误差最小,解调精度更高。     

基于二维压缩感知的定向遥感和变化检测

基于高斯测量矩阵的一维压缩感知测量数据不仅能很好地保持稀疏信号的能量信息, 也能够很好地继承稀疏信号的方向信息.但是在一维压缩感知模型中方向信息无法应用于稀疏信号的重构和检验.针对遥感影像中变化区域稀疏的特点提出了二维压缩感知模型.并利用能量和方向信息构建了基于二维压缩感知的稀疏信号重构算法(2DOMP).理论分析和实验结果证明, 2DOMP算法的信号重构能力更强.同时根据压缩感知恢复稀疏信号只需要很少测量数据的特性提出了定向遥感和定向变化检测的概念.     

低信噪比下非凸化压缩感知超宽带信道估计方法

受感知信息算子矩阵相干性和噪声的影响,压缩感知超宽带(UWB)信道估计误差过大.为此,首先提出利用压缩观测信号加权构造自适应感知信息(ASI)算子矩阵的方法,ASI算子矩阵不仅具有弱相干性,而且包含观测信息,适用于重建算法选择最优稀疏表示原子.其次提出修正稀疏度自适应匹配追踪(SAMP)算法,无需稀疏度或信噪比的先验信息实现压缩感知稀疏信号准确重建.最后基于ASI算子矩阵和修正SAMP算法提出非凸化压缩感知UWB信道估计方法,理论分析和仿真结果均表明该方法能在低信噪比和极低压缩比下实现UWB信道的准确估计.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

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正Communications—VLSI Researches and industries of telecommunications have been growing rapidly in the last 20 years and will keep their high growing pace in the next decade.The involved researches and developments cover mobile communications,highway and last-mile broadband communication,domain specific communications,and emerging D2D M2M communications.Radio communication steps into its