Ion-implanted p?n junction indium-phosphide impatt diodes

Implantation of beryllium ions into a uniformly doped n-type InP epitaxial layer grown by vapour-phase epitaxy has been utilised to create a p+?n junction for flat-profile single-drift impatt diodes. An r.f. performance comparable to gallium arsenide has been obtained. A c.w. output power of 1.6 W with 11.1% conversion efficiency has been measured at 9.78 GHz and a peak power of 6.1 W with 13.7% efficiency has been measured at 10.8 GHz with 10% duty cycle. The f.m. noise of the c.w. oscillators is comparable to results reported for silicon.     

High-bias-voltage operation of GaAs transferred-electron oscillators

Pulsed operation of epitaxial GaAs transferred-electron oscillators at a bias voltage of ten times the threshold voltage is described. The operating frequency, 14.1 GHz, was close to the transit-time frequency of 13 GHz. A maximum power output of 800 mW at 10% efficiency was obtained at 1% duty cycle. The power output and efficiency decreased with increasing duty cycle, and this decrease is attributed to the decrease in the peak/valley ratio of GaAs with increasing lattice temperature.     

Millimeter-wave pulsed IMPATT diode oscillators

Double-drift silicon IMPATT diodes were fabricated for pulse source application at 35, 94, and 140 GHz. The diodes were operated with 300 ns pulsewidth and a 1.5 percent duty cycle. All sources exhibited a change in output frequency of >1 percent throughout the duration of the pulsewidth with <1 dB peak power variation. Peak pulse output power levels of 10, 2, and 0.7 W were achieved in each of the three frequency bands, respectively.     

Single-diode 0.5kW TRAPATT oscillator

A lumped-element TRAPATT-diode oscillator capable of more than 0.5 kW output power from a single diode chip is described. Peak power of 575 W with 23% efficiency and a maximum efficiency of 28% at 0.5 kW output power have been consistently obtained at approximately 1 GHz.     

A 63-W W-Band Injection-Locked Pulsed Solid-State Transmitter

A high-power three-stage W-band injection-locked pulsed solid-state transmitter using four hybrid-coupled two-diode IMPATT power combiners as the final stage has been developed. Coherent peak output power of 63 W and 92.6 GHz was achieved. The transmitter was operated at 100-ns pulsewidth and 0.5-percent duty cycle. This transmitter development was directed at achieving a high-power output that would be useful for future miltimeter-wave system applications.     

High-Power Frequency Multiplier Using MIS Varactors (Short Papers)

The experiment described demonstrates the applicability of MIS varactors in microwave power circuits. A frequency doubler with 55-percent overall efficiency and pulsed output power of 5.5 W at 5.4 GHz with a duty cycle of 50 percent has been built by using two MIS varactors in parallel. The multiplier has a coaxial low-pass filter at the input and a waveguide output, allowing a 3-dB bandwidth of 8 percent.     

W-Band Power Combiner Design

W-band power combiners using double-drift IMPATTsilicon diodes have been developed to generate high pulsed power. The combiner design was based on a computer analysis of the cross-coupled coaxial-waveguide diode mounting structure which forms the basic module of the combiner. Peak output power of 20.5 W for a two diode combiner and 40 W for a four-diode combiner have been achieved. The diodes were operated at 100-ns pulsewidth and 0.5-percent duty cycle. The combiners demonstrated over 80-percent combining efficiency and 6-percent dc-RF conversion efficiency.     

C-band complementary TRAPATT diodes

Complementary n⁺-p junction TRAPATT diodes have been fabricated for C-band operation. Peak power output as high as 27 W with 42.5-percent efficiency has been achieved at 7.2 GHz.     

6‐GHz‐to‐18‐GHz AlGaN/GaN Cascaded Nonuniform Distributed Power Amplifier MMIC Using Load Modulation of Increased Series Gate Capacitance

A 6‐GHz‐to‐18‐GHz monolithic nonuniform distributed power amplifier has been designed using the load modulation of increased series gate capacitance. This amplifier was implemented using a 0.25‐μm AlGaN/GaN HEMT process on a SiC substrate. With the proposed load modulation, we enhanced the amplifier's simulated performance by 4.8 dB in output power, and by 13.1% in power‐added efficiency (PAE) at the upper limit of the bandwidth, compared with an amplifier with uniform gate coupling capacitors. Under the pulse‐mode condition of a 100‐μs pulse period and a 10% duty cycle, the fabricated power amplifier showed a saturated output power of 39.5 dBm (9 W) to 40.4 dBm (11 W) with an associated PAE of 17% to 22%, and input/output return losses of more than 10 dB within 6 GHz to 18 GHz.     

1.2～1.4GHz 300W宽带硅微波脉冲大功率管

介绍了L波段宽带硅微波脉冲300W大功率晶体管研制结果。该器件采用微波功率管环台面集电极结终端结构、非线性镇流电阻和热稳定等新工艺技术,在1.2～1.4GHz频带内,脉宽150μs,占空比10%和40V工作电压下,全带内脉冲输出功率大于300W,功率增益大于8.75dB,效率大于55%。     

280 W output power single-ended amplifier using single-die GaN-FET for W-CDMA cellular base stations

A single-ended amplifier using a single-die GaN-FET was successfully developed for W-CDMA cellular base-station systems. The developed amplifier delivers a peak saturated output power of 280 W with a linear gain of 12.6 dB at a drain voltage of 48 V under 2.15 GHz 3GPP W-CDMA signal input. It is believed that the 280 W output power is the record output power in single-ended amplifiers at 2 GHz band. A high drain efficiency of 29% is also obtained at 8 dB power back off from the saturated output power.     

一种基于Lange耦合器的S波段小型化集成功放

设计了一种全部采用国产芯片研制的小型化集成功放模块。该模块采用一种全新的结构模式,通过Lange耦合器将GaAs MMIC单片、单电源GaAs功率芯片和硅功率芯片混合集成,使得其体积比同等性能的功率放大器减小。测试结果表明,在工作电压36V、脉宽300μs、占空比10%的测试条件下,2.7～3.1GHz或3.1～3.4GHz带内输出功率均能达到50W,36V电源效率大于40%。     

Physical understanding and optimum design of high-powermillimeter-wave pulsed IMPATT diodes

A physical understanding of the specific mode of operation of high-power millimeter-wave pulsed IMPATT diodes is derived from a self-consistent numerical model. It is shown theoretically that there exists a uniformly avalanching p-i-n-like mode in high-current-density, pulsed silicon double-drift IMPATT diodes, as has been previously suggested. An optimum symmetrical flat doping-profile double-drift structure for 100-GHz operation is presented. It could deliver more than 40 W of available peak power with a 10% conversion efficiency accounting for circuit losses, at a safe junction temperature rise. The theoretical results allow an optimum design of the 94-GHz IMPATT structure for peak output power in excess of 50 W under low duty cycle     

Submicron-gate InP power MISFET's with improved output powerdensity at 18 and 20 GHz

The microwave characteristics at 18 and 20 GHz of submicron-gate indium phosphide (InP) metal-insulator-semiconductor field-effect transistors (MISFETs) for high output power density applications are presented. InP power MISFETs were fabricated with 0.7 μm gate lengths, 0.2 mm gate widths, and drain-source spacings of 2, 3 and 5 μm. The output power density was investigated as a function of drain-source spacing. The best output power density and gain were obtained for drain-source spacings of 3 μm. At 18 GHz output power densities of 1.59 W/mm with a gain of 3.47 dB and a power-added efficiency of 20.0% were obtained for a drain-source spacing of 3 μm. At 20 GHz output power densities of 1.20 W/mm with a gain of 3.17 dB and a power-added efficiency of 13.6% were obtained for a drain-source spacing of 3 μm     

Millimeter-wave high-power 0.25-/spl mu/m gate-length AlGaN/GaN HEMTs on SiC substrates

Reports on the CW power performance at 20 and 30 GHz of 0.25 /spl mu/m /spl times/ 100 /spl mu/m AlGaN/GaN high electron mobility transistors (HEMTs) grown by MOCVD on semi-insulating SiC substrates. The devices exhibited current density of 1300 mA/mm, peak dc extrinsic transconductance of 275 mS/mm, unity current gain cutoff (f/sub T/) of 65 GHz, and maximum frequency of oscillation (f/sub max/) of 110 GHz. Saturated output power at 20 GHz was 6.4 W/mm with 16% power added efficiency (PAE), and output power at 1-dB compression at 30 GHz was 4.0 W/mm with 20% PAE. This is the highest power reported for 0.25-/spl mu/m gate-length devices at 20 GHz, and the 30 GHz results represent the highest frequency power data published to date on GaN-based devices.     

InGaAs field-effect transistors with submicron gates forK-band applications

Depletion mode InGaAs microwave power MISFETs with 0.7 μm gate lengths and 0.2 mm gate widths have been fabricated using an epitaxial process. The devices employed a plasma deposited silicon dioxide gate insulator. The RF power performance at 18 GHz, 20 GHz, and 23 GHz is presented. An output power density of 1.04 W/mm with a corresponding power gain and power-added efficiency of 3.7 dB and 40%, respectively, was obtained at 18 GHz. This is the highest output power density obtained for an InGaAs based transistor on InP at K-band. Record output power densities for an InGaAs MISFET were also demonstrated to the stable within 3% over 17 hours of continuous operation at 18 GHz     

Millimeter wave pulsed gunn oscillator for low chirp radar application at W-Band

Pulsed Gunn oscillator at 94 GHz has been developed using GaAs CW Gunn diode, by choosing a proper operating point and resonant circuit. Peak power output of 25 mw at 94 GHz with a pulse width of 2 microseconds and duty factor of 2% is achieved. Bias circuit oscillations are suppressed by rising the operating voltage alongwith other circuit considerations.     

耳型折叠波导慢波结构W波段行波管

毫米波行波管具有大功率、宽频带、高增益等特点，广泛用于雷达、高速通信、电子对抗等现代军事装备中。为提高折叠波导耦合阻抗并考虑工程应用性，提出一种耳型折叠波导新型慢波结构。与常规矩形波导相比，工作频带内耦合阻抗提高30%以上，损耗降低10%。研制的耳型折叠波导W波段行波管，在工作电压21.9 kV，电流210 mA，占空比为5%时，10.8 GHz带宽内输出功率大于192 W，峰值功率达278 W，电子效率和增益分别达到6.3%和44.6 dB，行波管工作稳定。     

InP depletion-mode microwave MISFET's

Depletion-mode aligned-gate InP MISFET's with gate lengths of 1.5-1 µm have given output power of 1.26-W/mm gate width and power-added efficiencies of up to 40 percent at 4 GHz. At 12 GHz, 0.75-W/mm gate width with 22-percent power-added efficiency was obtained. At 18 GHz, a power output of 331 mW (0.59 W/mm) with 3.1 dB of gain and 15.7-percent power-added efficiency was measured. An output power of 245 mW (0.44 W/mm) with 3-dB gain and 10.7-percent efficiency was obtained at 20 GHz.     

Ku波段300W固态发射机的研制

介绍一种新成功研制的Ku波段固态发射机,该发射机采用波导合成技术,对4个80w末级功率模块进行功率合成,获得300W以上的峰值功率,发射机最大脉冲宽度为120μs,最大占空比为30％,合成效率大于93．7％。