100TH大功率双声道单端A类功率放大器

美国著名的大功率直热式发射三极管100TH是球体造型，功耗为100W，该管特性与大功率直热三极管805、808等相似。采用100TH大功率三极管制成的单端A类双声道功率放大器，音乐韵味特别浓郁，谐音丰富，低音浑厚有力，高音穿透力强，声场再现能力出色，其输出功率为28W×2。     

提高电压调节器大功率管可靠性措施

大功率三级管在晶体管电压调节器中起无触点开关作用，是一个关键元件。为了提高大功率三极管的可靠性，我们在以下几个方面进行了探讨：大功率三极管的合理选择；保护电路的设计；正反馈电路的使用；散热器的合理设计；散热器的表面处理；接触面表面粗糙度和平面度公差的选择；导热衬垫的使用。根据探讨结果，采取相应措施，取得较好的效果。     

谈谈四极管中短波广播发射机的中和问题

1.引言金属陶瓷四极管由于功率增益高等优越性,已广泛应用于近代大功率广播发射机。四极管由于帘栅隔离作用,跨路电容C_(ag1)(屏极与控制栅的极间电容)要比三极管小得多,大功率系列四极管C_(ag1)一般在1.5～10微微法,而三极管则为30～100微微法。但是,由于四极     

《供应大功率三极管芯片在检测中应注意的问题及三极管放大倍数在电老化试验前后的变化率分析》

文章对某晶体管厂寻找三个不同放大倍数范围的三极管芯片的七次供货中的相关数据进行了分析,提出了大功率三极管芯片在检测中应注意的问题,并对三极管芯片放大倍数在电老化试验前后的变化率进行了简单分析.     

东芝813高保真单端A2类功率放大器

东芝（Toshiba）813为直热式大功率束射四极管，其性能与RCA813、Russia 4813和国产FUl13相同。该功放管的最大功耗为220W。将大功率束射四极管东芝改为高保真三极管接法以后，其特性与大功率直热三极管211、845、STC4212E相近。采用东芝813制成的单端A2类功放输出功率强劲，音乐韵味浓郁，高低音分明，音域宽广，最大输出功率为21W。     

二千瓩中波发射台

据称世界上功率最大的中波广播电台已由英国 BBC 投入使用,其功率为2000瓩。此发射机的高频末级采用三只并联的大功率水冷三极管。发射机为非对称输出。由二只同类型的大功率发射三极管组成的推挽电     

电真空器件

0019908低频大功率三极管快速筛选技术的应用[刊]/郑石平//电子产品可靠性与环境试验.-2000,(4).-21～24(A)利用快速筛选技术对低频大功率三极管快筛是一种经济、有效的筛选手段,它可以有效地剔除热敏参数不良的器件,保证整批器件的可靠性。0019909微波真空电子器件磁控管的失效率模型[刊]/苏振华//电子产品可靠性与环境试验.-2000,(4).-18～20     

三极管及其代换方法

三极管是一种在电子线路中广泛使用的元器件,较易损坏。三极管按其频率特性,可分为低频三伋管、高频三极管;按其功率来分,可分为小功率、中功率和大功率三极管。在代换时,代换的三极管的截止频率一定要等于、大于被代换的三极管或高于工作     

冠醚除钠在台面钝化中的应用

本文介绍了冠醚吸附除钠在大功率三极管台面钝化中的应用,也介绍了试验方法和测量结果,并对试验中的问题进行了讨论.     

3AD67锗PNP型低频大功率三极管

~~3AD67锗PNP型低频大功率三极管~~     

Planar Triode for Vacuum Microelectronics

Russian Microelectronics - The article studies a triode for vacuum microelectronics with horizontal geometry (planar triode). A simple theoretical model of the device is proposed and the minimum...     

Characteristics of the dielectric diode and triode at very high frequencies

The dielectric triode is represented as a one-dimensional parallel-plane model, where the gate electrode consists of a thin continuous equipotential sheet of charge (as in the triode proposed by G.T. W ). Such a triode is the solid-state analogue of the vacuum pentode with high input and output impedance and operating under conditions of space-charge-limited current.

The incremental admittance and transadmittance of the dielectric triode are calculated as functions of transit angle, current density, geometrical dimensions and properties of the material used.

The triode in the small-signal mode of operation is represented as a linear active two-port circuit element. The four basic Y parameters of this element are calculated.

It is shown, that the dielectric triode can operate as a conventional wide-band amplifier up to frequencies of many thousands of megacycles. It is shown also, that electronic processes inside the triode do not set the limit for device operation at the frequencies corresponding to the transit angles much larger than π, and the triode can operate at these frequencies as a tuned amplifier, with the effect of “cold” interelectrode capacitances eliminated.

It is concluded, that the dielectric triode should considerably extend the u.h.f. limit of operation of transistors and conventional vacuum tubes.     

A novel in situ vacuum encapsulated lateral field emitter triode

We have designed and fabricated a novel lateral field emitter triode, which is in situ vacuum encapsulated so that any troublesome additional vacuum sealing process is not required. The device exhibits low turn-on voltage of 7 V, stable current density of 2 μA per tip, and high transconductance of 1.7 μS per 100 tips field emitter array at V_AC=22 V. An in situ vacuum encapsulation employing recessed cavities by isotropic RIE (reactive ion etch) method and an electron beam evaporated molybdenum vacuum seal are implemented to fabricate the new field emitter triode. The superb field emitter characteristics are probably due to sub-micron dimension device structure and the pencil type lateral cathode tip employing upper and lower LOCOS oxidation     

A micromachined vacuum triode using a carbon nanotube cold cathode

A fully integrated on-chip vacuum microtriode using carbon nanotubes as field emitters was constructed laterally on a silicon surface using microelectromechanical systems (MEMS) design and fabrication principles. Each electrode in the triode was made of a hinged polycrystalline silicon panel that could be rotated and locked into an upright position. The device was operated at a current density as high as 16 A/cm/sup 2/. Although the transconductance was measured only at 1.3 /spl mu/S, the dc output power delivered at the anode was almost 40 /spl times/ more than the power lost at the grid electrode. The technique combines high-performance nano-materials with mature solid-state fabrication technology to produce miniaturized power-amplifying vacuum devices in an on-chip form, which could potentially offer a route of integrating vacuum and solid-state electronics and open up new applications for "old-fashioned" vacuum tubes.     

Triode amplifiers for the infrared

Recent progress with diodes operating at infrared wavelengths Suggests the possibility of triode amplifiers for this frequency range. The potential of such devices is considered theoretically; An analysis based on a specific model device is carried out. The results indicate that power gain greater than unity is possible atlambda = 10mu. Although the model device is difficult to construct, it is an assemblage of components which are today individually within the state of the art. Infrared triode oscillators appear also to be possible.     

碳纳米管场致发射结构的研究

碳纳米管以其特有的电学性质而成为一种优良的冷阴极材料。在场致发射器件中，真空度是决定发射稳定性的一个重要因素。如果碳纳米管阴极附近的真空度太低，将产生打火、气体电离、离子回轰阴极等问题，将导致阴极发射电流的迅速衰减。本文通过对基于碳纳米管冷阴极的二极管和三极管的场发射特性的实验，分挤了残余气体压强与外加电压、发射体工作时间的关系以及碳纳米管阵列的I-E曲线，利用这些结果可以优化碳纳米管场致发射结构的设计。     

Power rectifier model including self heating effects

A compact circuit model for power PiN diode is presented in this paper. The model includes thermal and electrical characteristics. Emitter efficiency effect, voltage drop due to epilayer region and accurate modeling of reverse recovery and forward recovery are main features of the electric part of the model. The thermal part of the model dynamically takes into account heat generation and flow through the device and includes the effect of temperature on diode model parameters. Circuit implementation of device thermal equations includes the effect of the non uniform heat generation in the chip and, hence, is very effective in modeling thermal response to short current pulses, which give a substantial modification of power rectifiers characteristics with negligible case heating. Modeling of charge distribution in the epilayer and of heat flow, is achieved through an approximation of the Laplace transform of the exact solution. The model is implemented as a Pspice subcircuit. Medici device simulations, including self heating, are used to validate the Pspice model.     

三极碳纳米管场发射显示屏的制作研究

利用碳纳米管作为阴极材料的场致发射显示屏是一种新型的平板器件。介绍了三极结构碳纳米管场致发射显示屏的工作原理,基本结构以及寻址方式。重点讨论了在制作器件方面所存在的真空封装问题,荧光粉制作问题以及绝缘隔离层问题。在提出一种新型结构栅极制作工艺的基础上,成功地制作了三极碳纳米管场发射显示屏器件。     

碳纳米管场发射显示器中栅极技术的研究

碳纳米管场发射显示器件的研究已在各个国家开展了许多年，但仍然有很多的问题亟待解决，如碳纳米管作为阴极发射材料的发射均匀性、开启电场、栅极结构的制作、荧光屏制作、真空封装等困难。本文研究了碳纳米管场发射器件的几种结构、特性及其制作工艺，重点阐述了前栅极结构碳纳米管场发射显示器件中在栅极制作和阴极材料装配的瓶颈，并提出了一种栅极制作和阴极保护的方法，并运用此方法在实验室制作了三极结构器件进行验证，有效地解决了制作前栅极结构的困难，为制作大面积碳纳米管场发射显示屏提供了可行性方案。     

Characterization and CMRR Modeling of a Carbon-Nanotube Field-Emission Differential Amplifier

A novel vacuum field-emission differential amplifier (diff-amp) based on carbon-nanotube (CNT) emitters has been developed, modeled, and its ac performance characterized. A dual-mask microfabrication process was employed to achieve a single-chip diff-amp by integrating matched CNT field-emission triodes with built-in split gates and integrated anodes. The identical pair of triode amplifiers was well matched in device characteristics. The measured ac common-mode-rejection ratio (CMRR) of the diff-amp was ~ 50 dB. The proposed CMRR semianalytical model was validated with the experimental data. The successful implementation of the CNT diff-amp demonstrates a new way to achieve high-temperature and radiation-tolerant vacuum integrated circuits.