基于博弈论的D2D通信功率控制算法

针对多D2D通信用户共享蜂窝网络频谱资源中的干扰进行研究,为了减少D2D用户间干扰带来的影响,提出了一种改进的基于博弈论的D2D通信功率控制算法。算法中的博弈者是复用相同频谱资源的多D2D通信用户。建立了博弈模型,并在代价函数中引入代价因子,确定了效用函数,得到参与博弈的D2D用户的最优响应函数。文中对博弈均衡特性进行分析,证明了模型中的策略能够达到稳定状态。通过仿真实验验证了算法的有效性,并且与其他算法对比,证明使用此改进算法的D2D用户吞吐量更大,公平性更高。     

依概率主动窃听下D2D通信的物理层安全研究

本文研究了依概率主动窃听下D2D通信的联合防窃听和抗干扰问题。由于主动窃听者可以依概率选择被动窃听或主动干扰，因此很难对抗。针对主动窃听者攻击方式的动态变化，本文采用稳健博弈学习方法来提高D2D通信的平均安全吞吐量，将一个蜂窝用户(CUE)和多个D2D用户(DUEs)之间的交互建模为一个领导者-多个追随者的斯坦博格博弈，引入了干扰代价机制描述蜂窝用户与D2D用户之间的竞争关系，设计了一个精确势能博弈描述多个D2D用户之间的协作关系。首先证明了底层子博弈的纳什均衡(NE)的存在性，并进一步证明了所提博弈的斯坦博格均衡(SE)的存在性。在此基础上，提出了基于随机学习自动机的稳健协同D2D功率控制算法，并验证其优于随机选择算法和D2D自私功率控制算法。      

全负载蜂窝网络下多复用D2D通信功率分配算法研究

针对全负载蜂窝网络中D2D通信的功率分配问题,该文提出了一种基于非合作完全信息博弈纳什均衡解的多复用D2D通信功率分配算法。以优先保证蜂窝用户通信质量与D2D用户接入率为前提,设置D2D通信系统上行链路帧结构,之后建立非合作完全信息博弈系统模型,引入定价机制到功率分配博弈模型中并分析纳什均衡解的存在性与唯一性,最后给出该模型的分布式迭代求解算法。仿真结果表明,随着D2D用户复用数量的增加,该算法在提升系统吞吐量的同时,能有效地控制系统内部干扰,大幅度降低系统总能耗。     

异构蜂窝网络中基于Stackelberg博弈的能效优化算法

设备到设备(Device To Device,D2D)通信允许移动终端无需通过基站而进行直接通信。为提高蜂窝系统能效,引入D2D通信共享频谱资源形成异构蜂窝网络。本文将D2D通信的能效优化问题转化为博弈收益最大化问题,并提出了一种基于Stackelberg博弈的分布式功率控制算法。针对系统模型中存在的跨层干扰以及层内干扰,该算法建立了干扰价格系数与D2D对发送功率之间的函数关系,并求解出给定干扰价格系数下D2D对最佳发送功率的闭合表达式。仿真结果表明所提算法能够在最大化基站端蜂窝用户收益的基础上有效提高D2D对的总能效。      

一种5G异构云无线接入网络的D2D资源分配算法

为了解决设备对设备(Device-to-Device,D2D)资源共享带来的信号干扰问题,提出了一种5G异构云无线接入网络的D2D通信资源分配算法.在保证服务质量的前提下,将宏用户设备的频谱资源分配给D2D和中继用户设备,并且把资源分配问题看作一对一的匹配博弈.采用婚姻匹配理论,得到初始的匹配方案.在初始匹配的基础上,提出了一种遵循卡尔多-希克斯(Kaldor-Hicks)原则的资源交换策略,以提高系统的吞吐量.仿真结果表明,该资源分配算法收敛较快,与现有方案相比,能使系统吞吐量提升15％以上,能给系统用户带来约10％的增益,并且有较强抗信道干扰能力.     

基于安全中断概率的D2D安全接入策略

针对D2D蜂窝系统通信安全性受资源限制的问题,考虑到蜂窝链路和D2D链路的同频干扰能够为两者带来安全增益,基于此,提出一种基于安全中断概率的D2D用户接入策略。首先理论分析了蜂窝用户和D2D用户的安全中断概率,并给出了基于安全中断概率最小化的D2D用户功率优化算法。在上述分析的基础上,选择安全中断概率最小的D2D用户接入复用蜂窝用户的无线资源,同时提高D2D通信链路和蜂窝上行链路的安全性。最后,仿真结果证明了所提算法的有效性。     

D2D通信中一种资源分配与功率控制结合的方案

以underlay方式工作的D2D(Device-to-Device)通信通过资源共享复用蜂窝网络中的资源,在提高系统资源利用率的同时,对已有蜂窝链路带来了同频干扰。为了减小因无线资源复用带来的干扰,提出了一种资源分配与功率控制相结合的方法。以最小化系统干扰为目的,通过在D2 D链路之间合理地分配资源,保证了蜂窝链路的通信质量;同时动态地调整D2 D链路的发射功率,在保证相应蜂窝链路干扰可控的情况下,合理提高了D2 D链路的通信质量。仿真结果表明,与现有方案相比,所提出的算法能够有效地提高D2 D通信与蜂窝用户共存场景下的系统性能。     

LTE系统中引入D2D技术后的干扰研究

D2D(终端到终端)是一种在LTE(长期演进)通信系统中通过重用小区内蜂窝用户的资源来实现终端到终端通信的新型技术。在LTE中引入D2D后,资源调度也随之发生变化,不仅体现在资源块的使用上,也体现在相应的功率控制机制上。D2D技术在提高系统容量的同时,也带来了新的干扰问题——普通蜂窝通信模式与D2D模式的相互干扰。通过协调好系统内蜂窝通信与D2D通信之间的干扰,可以提高系统的总体性能。     

蜂窝网络中D2D通信模式选择和信道分配算法

设备到设备(D2D)通信中,不合理的模式选择和信道分配方案会引入干扰,严重时不仅不能体现D2D通信优势,而且还将导致蜂窝用户传输速率下降。针对这一问题,文章提出了一种蜂窝网络中D2D模式选择和信道分配算法。仿真结果表明,新算法能够在有效的平衡蜂窝网络中D2D用户接入率和系统总吞吐量的同时,最小化用户之间的干扰。     

基于大规模MIMO和D2D技术的混合网络能量效率研究

文章研究了基于大规模多输入多输出（multiple-input multiple-output,MIMO）和端到端（device-to-device,D2D）技术的双层混合网络及其能量效率,面向D2D用户（D2D user,DU）提出了无线能量采集方案。在该混合网络模型中,宏蜂窝基站由大规模MIMO天线阵列构成,D2D网络覆盖在宏蜂窝之上,与蜂窝网共享频谱。为了保证D2D通信,系统配置了由小规模MIMO天线构成的专用能量发射基站（power beacon,PB）,其通过迫零预编码向能量约束的D2D发射机传送能量;同时,为了提高网络的能量效率,DU还可以从附近蜂窝网用户（cellular user,CU）的射频（radio frequency,RF）干扰信号中采集能量。对此混合网模型和能量采集方案,文章通过假设网络中CU、DU以及PB的位置服从独立泊松点过程和利用随机几何分析方法,基于反功率控制方案得到了网络中任一D2D发射机通过采集足够能量来建立通信链路的概率,其以简单的积分形式给出。分析和数值结果表明,文章提出的无线能量采集方案由于PB的配置保证了D2D通信的可靠性;同时又因为充分利用了附近CU的RF干扰信号,有效提高了D2D用户采集足够能量的概率,节约了PB的能量,改善了系统的能量效率。      

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

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正Communications—VLSI Researches and industries of telecommunications have been growing rapidly in the last 20 years and will keep their high growing pace in the next decade.The involved researches and developments cover mobile communications,highway and last-mile broadband communication,domain specific communications,and emerging D2D M2M communications.Radio communication steps into its