Electrical Transport Mechanisms and Photoconduction in Undoped Crystalline Flash-Evaporated Lead Iodide Thin Films

The flash-evaporation technique was utilized to fabricate undoped 1.35-μm and 1.2-μm thick lead iodide films at substrate temperatures \( T_{\rm{s}} = 150 \)°C and 200°C, respectively. The films were deposited onto a coplanar comb-like copper (Cu-) electrode pattern, previously coated on glass substrates to form lateral metal–semiconductor–metal (MSM-) structures. The as-measured constant-temperature direct-current (dc)-voltage (\( I\left( {V;T} \right) - V \)) curves of the obtained lateral coplanar Cu-PbI₂-Cu samples (film plus electrode) displayed remarkable ohmic behavior at all temperatures (\( T = 18 - 90\,^\circ {\hbox{C}} \)). Their dc electrical resistance \( R_{\rm{dc}} (T \)) revealed a single thermally-activated conduction mechanism over the temperature range with activation energy \( E_{\rm{act}} \approx 0.90 - 0.98 \,{\hbox{eV}} \), slightly less than half of room-temperature bandgap energy \( E_{\rm{g}} \) (\( \approx \,2.3\, {\hbox{eV}} \)) of undoped 2H-polytype PbI₂ single crystals. The undoped flash-evaporated \( {\hbox{PbI}}_{\rm{x}} \) thin films were homogeneous and almost stoichiometric (\( x \approx 1.87 \)), in contrast to findings on lead iodide films prepared by other methods, and were highly crystalline hexagonal 2H-polytypic structure with c-axis perpendicular to the surface of substrates maintained at \( T_{\rm{s}} { \gtrsim }150^\circ {\hbox{C}} \). Photoconductivity measurements made on these lateral Cu-PbI₂-Cu-structures under on–off visible-light illumination reveal a feeble photoresponse for long wavelengths (\( \lambda > 570\,{\hbox{nm}} \)), but a strong response to blue light of photon energy \( E_{\rm{ph}} \) \( \approx \,2.73 \, {\hbox{eV}} \) (\( > E_{\rm{g}} \)), due to photogenerated electron–hole (e–h) pairs via direct band-to-band electronic transitions. The constant-temperature/dc voltage current–time \( I\left( {T,V} \right) - t \) curves of the studied lateral PbI₂ MSM-structures at low ambient temperatures (\( T < 50^\circ {\hbox{C}} \)), after cutting off the blue-light illumination, exhibit two trapping mechanisms with different relaxation times. These strongly depend on \( V \) and \( T \), with thermally generated charge carriers in the PbI₂ mask photogenerated (e–h) pairs at higher temperatures.     

Inferior myocardial infarction detection using stationary wavelet transform and machine learning approach

Early and accurate detection of myocardial infarction is imperative for reducing the mortality rate due to heart attack. Present work proposes a novel technique aiming toward accurate and timely detection of inferior myocardial infarction (IMI). Stationary wavelet transform has been used to decompose the segmented multilead electrocardiogram (ECG) signal into different sub-bands. Sample entropy, normalized sub-band energy, log energy entropy, and median slope calculated over selected bands of multilead ECG are used as features. Support vector machine (SVM) and K-nearest neighbor (KNN) have been used to classify between subjects admitted for health control (HC) and patients suffering from IMI, using attributes selected on the basis of gain ratio. The full length ECG of lead II, III, and aVF of all the subjects having IMI or admitted for HC from Physikalisch-Technische Bundesanstalt Database (PTB-DB) has been used in the present work. The proposed technique has been scrutinized under both “class-oriented,” and more practical, “subject-oriented” approach. Under the class-oriented approach, data have been divided into training and test data irrespective of the patients, whereas in subject-oriented approach, data from one patient have been used for test and training has been done on the rest of the subjects. Under the class-oriented approach, area under the receiver operating characteristic curve (Roc), sensitivity (Se%), specificity (Sp%), positive predictivity (+P%), and accuracy (Ac%) is Roc \(=\) 0.9945, Se% \(=\) 98.67, Sp% \(=\) 98.72, +P% \(=\) 98.79, Ac% \(=\) 98.69 using KNN and Roc \(=\) 0.9994, Se% \(=\) 99.35, Sp% \(=\) 98.29, +P% \(=\) 98.41, Ac% \(=\) 98.84 using SVM. For the subject-oriented approach, an average Ac% \(=\) 81.71, Se% \(=\) 79.01, Sp% \(=\) 79.26, and +P% \(=\) 80.25 has been achieved. This shows the potential of the proposed technique to work for an unknown subject, on which it has not been trained.     

Intermittent Fault Diagnosability of Hyper Petersen Network

The problem of permanent fault diagnosis has been discussed widely, and the diagnosability of many well-known networks have been explored. Faults of a multiprocessor system generally include permanent and intermittent, with intermittent faults regarded as the most challenging to diagnose. In this paper, we investigate the intermittent fault diagnosability of hyper Petersen networks. First, we derive that an \(n\)-dimensional hyper Petersen network \(HP_{n}\) with fault-free edges is \((n - 1)_{i}\)-diagnosable under the PMC model. Then, we investigate the intermittent fault diagnosability of \(HP_{n}\) with faulty edges under the PMC model. Finally, we prove that an \(n\)-dimensional hyper Petersen network \(HP_{n}\) is \((n - 2)_{i}\)-diagnosable under the MM* model.     

Photonic crystal-based permutation switch for optical networks

We present, for the first time, the design of a low-cross talk scalable permutation switch employing photonic crystal ring resonators in an optical network. Through this novel approach, the transition between different states of the \(2 \times 2\) optical switch, as the basic element, is achieved by applying different operating wavelengths. Subsequently, the shuffling mechanisms in \(3 \times 3\) and \(4 \times 4\) optical networks are realized by controlling the position of photonics crystal ring resonators. Lowest cross talk levels of 6 and 5% are obtained for “bar” and “cross” switching states, respectively.     

Study on the Effect of Mn,Zn, and Sb on Undercooling Behavior of Sn-Ag-Cu Alloys Using Differential Thermal Analysis

Differential thermal analysis (DTA) has been conducted on directionally solidified near-eutectic Sn-3.0 wt.%Ag-0.5 wt.%Cu (SAC), SAC \(+\) 0.2 wt.%Sb, SAC \(+\) 0.2 wt.%Mn, and SAC \(+\) 0.2 wt.%Zn. Laser ablation inductively coupled plasma mass spectroscopy was used to study element partitioning behavior and estimate DTA sample compositions. Mn and Zn additives reduced the undercooling of SAC from 20.4\(^\circ \hbox {C}\) to \(4.9^\circ \hbox {C}\) and \(2^\circ \hbox {C}\), respectively. Measurements were performed at cooling rate of \(10^\circ \hbox {C}\) per minute. After introducing 200 ppm \(\hbox {O}_2\) into the DTA, this undercooling reduction ceased for SAC \(+\) Mn but persisted for SAC \(+\) Zn.     

Low-Voltage CMOS Switch for High-Speed Rail-To-Rail Sampling

Sampling switches have a dominant role in switched-capacitor circuits and analog-to-digital convertors. Since they act as input gates, their nonlinearities directly degrade the quality of the input signals. The scaling-down trend of CMOS technology and increasing demands for high-speed and power-efficient circuits pose design challenge in high-speed sampling switches for low-voltage applications. To address this issue, an optimized CMOS switch is proposed in this paper consisting of a bootstrapped NMOS switch and a boosted PMOS switch as a transmission gate. By utilizing this technique, the nonlinearity resulting from the threshold voltage variation (body effect) of NMOS switch is mitigated, considerably. To evaluate the proposed switch, it is designed in 0.18 \(\upmu \hbox {m}\) CMOS process technology. According to the obtained simulation results, this switch can achieve total harmonic distortion of \(-\)78.81 and \(-\)62.99 dB in 100 MS/s at \(V_\mathrm{dd}\) = 1 Volt and 50 MS/s at \(V_\mathrm{dd}\) = 0.8 V, respectively.     

Ab␣Initio Study of Aluminium Impurity and Interstitial-Substitutional Complexes in Ge Using a Hybrid Functional (HSE)

The results of an ab?initio modelling of aluminium substitutional impurity (\({\hbox {Al}}_{\rm Ge}\)), aluminium interstitial in Ge [\({\hbox {I}}_{\rm Al}\) for the tetrahedral (T) and hexagonal (H) configurations] and aluminium interstitial-substitutional pairs in Ge (\({\hbox {I}}_{\rm Al}{\hbox {Al}}_{\rm Ge}\)) are presented. For all calculations, the hybrid functional of Heyd, Scuseria, and Ernzerhof in the framework of density functional theory was used. Defects formation energies, charge state transition levels and minimum energy configurations of the \({\hbox {Al}}_{\rm Ge}\), \({\hbox {I}}_{\rm Al}\) and \({\hbox {I}}_{\rm Al}{\hbox {Al}}_{\rm Ge}\) were obtained for ?2, ?1, 0, \(+\)1 and \(+\)2 charge states. The calculated formation energy shows that for the neutral charge state, the \({\hbox {I}}_{\rm Al}\) is energetically more favourable in the T than the H configuration. The \({\hbox {I}}_{\rm Al}{\hbox {Al}}_{\rm Ge}\) forms with formation energies of ?2.37 eV and ?2.32 eV, when the interstitial atom is at the T and H sites, respectively. The \({\hbox {I}}_{\rm Al}{\hbox {Al}}_{\rm Ge}\) is energetically more favourable when the interstitial atom is at the T site with a binding energy of 0.8 eV. The \({\hbox {I}}_{\rm Al}\) in the T configuration, induced a deep donor (\(+\)2/\(+1\)) level at \(E_{\mathrm {V}}+0.23\) eV and the \({\hbox {Al}}_{\rm Ge}\) induced a single acceptor level (0/?1) at \(E_{\mathrm {V}}+0.14\) eV in the band gap of Ge. The \({\hbox {I}}_{\rm Al}{\hbox {Al}}_{\rm Ge}\) induced double-donor levels are at \(E_{\rm V}+0.06\) and \(E_{\rm V}+0.12\) eV, when the interstitial atom is at the T and H sites, respectively. The \({\hbox {I}}_{\rm Al}\) and \({\hbox {I}}_{\rm Al}{\hbox {Al}}_{\rm Ge}\) exhibit properties of charge state-controlled metastability.     

Application of photonic crystal ring resonator nonlinear response for full-optical tunable add–drop filtering

In this paper, we investigate the application of Kerr-like nonlinear photonic crystal (PhC) ring resonator (PCRR) for realizing a tunable full-optical add–drop filter. We used silicon (Si) nano-crystal as the nonlinear material in pillar-based square lattice of a 2DPhC. The nonlinear section of PCRR is studied under three different scenarios: (1) first only the inner rods of PCRR are made of nonlinear materials, (2) only outer rods of PCRR have nonlinear response, and (3) both of inner and outer rods are made of nonlinear material. The simulation results indicate that optical power required to switch the state of PCRR from turn-on to turn-off, for the nonlinearity applied to inner PCRR, is at least \(2000\, \hbox {mW}{/}\upmu \hbox {m}^{2}\) and, for the nonlinearity applied to outer PCRR, is at least \(3000\, \hbox {mW}{/}\upmu \hbox {m}^{2}\) which corresponds to refractive index change of \(\Delta n_\mathrm{NL }= 0.085\) and \(\Delta n_\mathrm{NL }= 0.15\), respectively. For nonlinear tuning of add–drop filter, the minimum power required to 1 nm redshift the center operating wavelength \((\lambda _{0} = 1550\, \hbox {nm})\) for the inner PCRR scenario is \(125\, \hbox {mW}{/}\upmu \hbox {m}^{2}\) (refractive index change of \(\Delta n_\mathrm{NL}= 0.005)\). Maximum allowed refractive index change for inner and outer scenarios before switch goes to saturation is \(\Delta n_\mathrm{NL }= 0.04\) (maximum tune-ability 8 nm) and \(\Delta n_\mathrm{NL }= 0.012\) (maximum tune-ability of 24 nm), respectively. Performance of add–drop filter is replicated by means of finite-difference time-domain method, and simulations displayed an ultra-compact size device with ultra-fast tune-ability speed.     

Effects of Multiple Stacking Faults on the Electronic and Optical Properties of Armchair MoS$$_{}$$ Nanoribbons: First-Principles Calculations

The electronic and optical properties of armchair MoS\(_{2}\) nanoribbons with multiple stacking faults are investigated using first-principles calculations. It’s interesting that the band gaps approach zero for armchair MoS\(_{2}\) nanoribbons with two and four stacking faults. The gaps of armchair MoS\(_{2}\) nanoribbons with one stacking fault and three stacking faults are converged to 0.46 eV and 0.36 eV, respectively, which is smaller than perfect MoS\(_{2}\) nanoribbons. The partial charge density of armchair MoS\(_{2}\) nanoribbons with two stacking faults shows that the defect levels are originated from stacking faults. The frequency-dependent optical response (dielectric function, absorption, reflectance and electron energy loss spectra) is also presented. The optical results of monolayer MoS\(_{2}\) are in agreement with previous study. The peaks in the imaginary part of perfect armchair MoS\(_{2}\) nanoribbons are about 2.8 eV, 4.0 eV and 5.4 eV and the peaks of the imaginary part of armchair MoS\(_{2}\) nanoribbons with stacking faults are mainly 2.8 eV and 5.4 eV. They are independent of ribbon width. The peaks in electron energy loss spectra move toward larger wavelengths (redshift) due to the introduction of stacking faults.     

Ultra-low power incremental delta-sigma ADC for energy harvesting sensor applications

This paper presents an ultra-low power incremental \({\varDelta {\Sigma }}\) ADC with flexible sampling frequency, accuracy, and operational duty-cycle. The flexibility and low leakage power enable efficient scaling of average power together with performance. This allows simultaneous optimization of the sensor system (1) for various multiplexed, both on-chip and off-chip sensor interfaces, and (2) for a wide range of available harvested energy. The architecture allows further flexibility as it can be used in regular continuous \({\varDelta {\Sigma }}\) mode as well, without trading off accuracy. The ADC was implemented in a 180 nm CMOS process, on the same ASIC with a temperature sensor, pressure sensor and energy harvesting functionalities. The ADC has a nominal power consumption of \(1.3\,\upmu\)W, SNDR of 68 dB and BW of 200 Hz, denoting a \(FOM_w =1.58\) pJ/conv.     

$$\ell _{1/2,1}$$ group sparse regularization for compressive sensing

Recently, the design of group sparse regularization has drawn much attention in group sparse signal recovery problem. Two of the most popular group sparsity-inducing regularization models are \(\ell _{1,2}\) and \(\ell _{1,\infty }\) regularization. Nevertheless, they do not promote the intra-group sparsity. For example, Huang and Zhang (Ann Stat 38:1978–2004, 2010) claimed that the \(\ell _{1,2}\) regularization is superior to the \(\ell _1\) regularization only for strongly group sparse signals. This means the sparsity of intra-group is useless for \(\ell _{1,2}\) regularization. Our experiments show that recovering signals with intra-group sparse needs more measurements than those without, by the \(\ell _{1,\infty }\) regularization. In this paper, we propose a novel group sparsity-inducing regularization defined as a mixture of the \(\ell _{1/2}\) norm and the \(\ell _{1}\) norm, referred to as \(\ell _{1/2,1}\) regularization, which can overcome these shortcomings of \(\ell _{1,2}\) and \(\ell _{1,\infty }\) regularization. We define a new null space property for \(\ell _{1/2,1}\) regularization and apply it to establish a recoverability theory for both intra-group and inter-group sparse signals. In addition, we introduce an iteratively reweighted algorithm to solve this model and analyze its convergence. Comprehensive experiments on simulated data show that the proposed \(\ell _{1/2,1}\) regularization is superior to \(\ell _{1,2}\) and \(\ell _{1,\infty }\) regularization.     

Design and Performance Study of Dynamic Fractors in Any of the Four Quadrants

A fractor is a simple fractional-order system. Its transfer function is \(1/Fs^{\alpha }\); the coefficient, F, is called the fractance, and \(\alpha \) is called the exponent of the fractor. This paper presents how a fractor can be realized, using RC ladder circuit, meeting the predefined specifications on both F and \(\alpha \). Besides, commonly reported fractors have \(\alpha \) between 0 and 1. So, their constant phase angles (CPA) are always restricted between \(0^{\circ }\) and \(-90^{\circ }\). This work has employed GIC topology to realize fractors from any of the four quadrants, which means fractors with \(\alpha \) between \(-\)2 and +2. Hence, one can achieve any desired CPA between \(+180^{\circ }\) and \(-180^{\circ }\). The paper also exhibits how these GIC parameters can be used to tune the fractance of emulated fractors in real time, thus realizing dynamic fractors. In this work, a number of fractors are developed as per proposed technique, their impedance characteristics are studied, and fractance values are tuned experimentally.     

Minimizing the Two-Round Even–Mansour Cipher

The r-round (iterated) Even–Mansour cipher (also known as key-alternating cipher) defines a block cipher from r fixed public n-bit permutations \(P_1,\ldots ,P_r\) as follows: Given a sequence of n-bit round keys \(k_0,\ldots ,k_r\), an n-bit plaintext x is encrypted by xoring round key \(k_0\), applying permutation \(P_1\), xoring round key \(k_1\), etc. The (strong) pseudorandomness of this construction in the random permutation model (i.e., when the permutations \(P_1,\ldots ,P_r\) are public random permutation oracles that the adversary can query in a black-box way) was studied in a number of recent papers, culminating with the work of Chen and Steinberger (EUROCRYPT 2014), who proved that the r-round Even–Mansour cipher is indistinguishable from a truly random permutation up to \(\mathcal {O}(2^{\frac{rn}{r+1}})\) queries of any adaptive adversary (which is an optimal security bound since it matches a simple distinguishing attack). All results in this entire line of work share the common restriction that they only hold under the assumption that the round keys \(k_0,\ldots ,k_r\) and the permutations \(P_1,\ldots ,P_r\) are independent. In particular, for two rounds, the current state of knowledge is that the block cipher \(E(x)=k_2\oplus P_2(k_1\oplus P_1(k_0\oplus x))\) is provably secure up to \(\mathcal {O}(2^{2n/3})\) queries of the adversary, when \(k_0\), \(k_1\), and \(k_2\) are three independent n-bit keys, and \(P_1\) and \(P_2\) are two independent random n-bit permutations. In this paper, we ask whether one can obtain a similar bound for the two-round Even–Mansour cipher from just one n-bit key and one n-bit permutation. Our answer is positive: When the three n-bit round keys \(k_0\), \(k_1\), and \(k_2\) are adequately derived from an n-bit master key k, and the same permutation P is used in place of \(P_1\) and \(P_2\), we prove a qualitatively similar \(\widetilde{\mathcal {O}}(2^{2n/3})\) security bound (in the random permutation model). To the best of our knowledge, this is the first “beyond the birthday bound” security result for AES-like ciphers that does not assume independent round keys.     

Error performance of optically preamplified hybrid BPSK-PPM systems with transmitter and receiver imperfections

In this paper, we investigate the impact of the transmitter finite extinction ratio and the receiver carrier recovery phase offset on the error performance of two optically preamplified hybrid M-ary pulse position modulation (PPM) systems with coherent detection. The first system, referred to as PB-mPPM, combines polarization division multiplexing (PDM) with binary phase-shift keying and M-ary PPM, and the other system, referred to as PQ-mPPM, combines PDM with quadrature phase-shift keying and M-ary PPM. We provide new expressions for the probability of bit error for PB-mPPM and PQ-mPPM under finite extinction ratios and phase offset. The extinction ratio study indicates that the coherent systems PB-mPPM and PQ-mPPM outperform the direct-detection ones. It also shows that at \(P_b=10^{-9}\) PB-mPPM has a slight advantage over PQ-mPPM. For example, for a symbol size \(M=16\) and extinction ratio \(r=30\) dB, PB-mPPM requires 0.6 dB less SNR per bit than PQ-mPPM to achieve \(P_b=10^{-9}\). This investigation demonstrates that PB-mPPM is less complex and less sensitive to the variations of the offset angle \(\theta \) than PQ-mPPM. For instance, for \(M=16\), \(r=30\) dB, and \(\theta =10^{\circ }\) PB-mPPM requires 1.6 dB less than PQ-mPPM to achieve \(P_b=10^{-9}\). However, PB-mPPM enhanced robustness to phase offset comes at the expense of a reduced bandwidth efficiency when compared to PQ-mPPM. For example, for \(M=2\) its bandwidth efficiency is 60 % that of PQ-mPPM and \(\approx 86\,\%\) for \(M=1024\). For these reasons, PB-mPPM can be considered a reasonable design trade-off for M-ary PPM systems.     

High-Accuracy Time-Mode Duty-Cycle-Modulation-Based Temperature Sensor for Energy-Efficient System Applications

This paper presents a new time-mode duty-cycle-modulation-based high-accuracy temperature sensor. Different from the well-known \({\varSigma }{\varDelta }\) ADC-based readout structure, this temperature sensor utilizes a temperature-dependent oscillator to convert the temperature information into temperature-related time-mode parameter values. The useful output information of the oscillator is the duty cycle, not the absolute frequency. In this way, this time-mode duty-cycle-modulation-based temperature sensor has superior performance over the conventional inverter-chain-based time domain types. With a linear formula, the duty-cycle output streams can be converted into temperature values. The design is verified in 65nm standard digital CMOS process. The verification results show that the worst temperature inaccuracy is kept within 1\(\,^{\circ }\mathrm{C}\) with a one-point calibration from \(-\)55 to 125 \(^{\circ }\mathrm{C}\). At room temperature, the average current consumption is only 0.8 \(\upmu \)A (1.1\(\,\upmu \)A in one phase and 0.5 \(\upmu \)A in the other) with 1.2 V supply voltage, and the total energy consumption for a complete measurement is only 0.384 \({\hbox {nJ}}\).     

Ultra-Fast Current Mode Sense Amplifier for Small $$I_{\mathrm{CELL}}$$ SRAM in FinFET with Improved Offset Tolerance

In this paper, a novel, high-performance and robust sense amplifier (SA) design is presented for small \(I_\mathrm{CELLl}\) SRAM, using fin-shaped field effect transistors (FinFET) in 22-nm technology. The technique offers data-line-isolated current sensing approach. Compared with the conventional CSA (CCSA) and hybrid SA (HSA), the proposed current feed-SA (CF-SA) demonstrates 2.15\(\times \) and 3.02\(\times \) higher differential current, respectively, for \({V}_{\mathrm{DD}}\) of 0.6 V. Our results indicate that even at the worst corner, CF-SA can provide 2.23\(\times \) and 1.7\(\times \) higher data-line differential voltage compared with CCSA and HSA, respectively. Further, 66.89 and 31.47 % reductions in the cell access time are achieved compared to the CCSA and HSA, respectively, under similar \(I_\mathrm{CELLl}\) and bit-line and data-line capacitance. Statistical simulations have proved that the CF-SA provides high read yield with 32.39 and 22.24 % less \(\upsigma _{\mathrm{Delay}}\). It also offers a much better read effectiveness and robustness against the data-line capacitance as well as \({V}_{\mathrm{DD}}\) variation. Furthermore, the CF-SA is able to tolerate a large offset of the input devices, up to 80 mV at \({V}_{\mathrm{DD}}=0.6\hbox {V}\).     

An energy optimization in wireless sensor networks by using genetic algorithm

Wireless sensor networks (WSNs) are used for several commercial and military applications, by collecting, processing and distributing a wide range of data. Maximizing the battery life of WSNs is crucial in improving the performance of WSN. In the present study, different variations of genetic algorithm (GA) method have been implemented independently on energy models for data communication of WSNs with the objective to find out the optimal energy \(\hbox {(E)}\) consumption conditions. Each of the GA methods results in an optimal set of parameters for minimum energy consumption in WSN related to the type of selected energy model for data communication, while the best performance of the GA method [energy consumption \((\hbox {E}=3.49\times 10^{-4}\,\hbox {J})\)] is obtained in WSN for communication distance (d) \({\ge }87\,\hbox {m}\) in between the sensor cluster head and a base station.     

The $$\mathbb {}$$-curve Construction for Endomorphism-Accelerated Elliptic Curves

We give a detailed account of the use of \(\mathbb {Q}\)-curve reductions to construct elliptic curves over \(\mathbb {F}_{p^2}\) with efficiently computable endomorphisms, which can be used to accelerate elliptic curve-based cryptosystems in the same way as Gallant–Lambert–Vanstone (GLV) and Galbraith–Lin–Scott (GLS) endomorphisms. Like GLS (which is a degenerate case of our construction), we offer the advantage over GLV of selecting from a much wider range of curves and thus finding secure group orders when \(p\) is fixed for efficient implementation. Unlike GLS, we also offer the possibility of constructing twist-secure curves. We construct several one-parameter families of elliptic curves over \(\mathbb {F}_{p^2}\) equipped with efficient endomorphisms for every \(p > 3\), and exhibit examples of twist-secure curves over \(\mathbb {F}_{p^2}\) for the efficient Mersenne prime \(p = 2^{127}-1\).     

5.18–7.42 GHz LC-VCO in subthreshold regime with low power low phase noise and immunity to PVT variations in 130 nm CMOS technology

In this paper, we propose an LC-VCO using automatic amplitude control and filtering technique to eliminate frequency noise around 2\(\omega _0\). The LC-VCO is designed with TSMC 130 nm CMOS RF technology, and biased in subthreshold regime in order to get more negative transconductance to overcome the losses in the LC-Tank and achieve less power consumption. The designed VCO operates at 5.17 GHz and can be tuned from 5.17 to 7.398 GHz, which is corresponding to 35.5% tuning range. The VCO consumes through it 495–440.5 \(\upmu\)W from 400 mV dc supply. This VCO achieves a phase noise of \(-\,122.3\) and \(-\,111.7\) dBc/Hz at 1 MHz offset from 5.17 and 7.39 GHz carrier, respectively. The calculated Figure-of-merits (FoM) at 1 MHz offset from 5.17 and 7.39 GHz is \(-\,199.7\) and \(-\,192.4\) dBc/Hz, respectively. And it is under \(-\,190.5\) dBc/Hz through all the tuning range. The FoM\(_T\) at 1 MHz offset from 5.17 GHz carrier is \(-\,210.6\) dBc/Hz. The proposed design was simulated for three different temperatures (\(-\,55\), 27, \(125\,^{\circ }\hbox {C}\)), and three supply voltages (0.45, 0.4, 0.35 V), it was concluded that the designed LC-VCO presents high immunity to PVT variations, and can be used for multi-standard wireless LAN communication protocols 802.11a/b/g.     

Two-channel perfect reconstruction (PR) quadrature mirror filter (QMF) bank design using logarithmic window function and spline function

In this work, two-channel perfect reconstruction quadrature mirror filter (QMF) bank has been proposed based on the prototype filter using windowing method. A novel window function based on logarithmic function along with the spline function is utilized for the design of prototype filter. The proposed window has a variable parameter ‘\(\alpha \)’, which varies the peak side lobe level and rate of fall-off side lobe level which in turn affects the peak reconstruction error (PRE) and amplitude distortion (\(e_{am}\)) of the QMF bank . The transition width of the prototype is controlled by the spline function using the parameter ‘\(\mu \)’. The perfect reconstruction condition is satisfied by setting the cutoff frequency (\(\omega _{c}\)) of the prototype low-pass filter at ‘\(\pi /2\)’. The performance of the proposed design method has been evaluated in terms of mean square error in the pass band, mean square error in the stop band, first side lobe attenuation (\(A_{1}\)), peak reconstruction error (PRE) and amplitude error (\(e_{am}\)) for different values of ‘\(\alpha \)’ and ‘\(\mu \)’. The results are provided and compared with the existing methods.