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1.
Recently, a new random telegraph signal (RTS) noise model for the drain current fluctuations (ΔId) associated with single-carrier trapping and detrapping has been developed from a flat-hand voltage perturbation (ΔVfb) of the BSIM3 current-voltage (I-V) model (Martin et al., 1997). The model's accuracy in predicting the gate bias and geometry dependence of RTS magnitudes has been verified and summarized. In this letter, the perturbation model has been extended to yield a new formulation for the scattering coefficient (α) which predicts the magnitude and bias dependence of 1/f noise without fitting parameters. The absence of fitting parameters allows for a direct determination of the oxide trap density (Nt(Efn)) from 1/f noise measurements. Results suggest that the BSIM3-based model accurately predicts the bias and geometry dependence of 1/f noise, that N2O annealing may significantly increase the oxide trap density at strong inversion and that the bias dependence of Nt(Efn) contains most of the 1/f noise dependence upon Vg  相似文献   

2.
An accurate calculation of MOSFET capacitance-voltage (C V) characteristics has to account for the bulk charge which is affected by nonuniform doping profiles and short-channel effects. In an approach based on the unified charge control model (UCCM), the voltage dependencies of the bulk charge are related to the standard parameters of the body plots which are routinely measured during MOSFET characterization. The results of the C-V calculations based on this model are in good agreement with experimental data and calculations based on the standard BSIM model. Compared to the BSIM simulations, the present model more accurately describes capacitances related to the bulk charge and the device subthreshold behavior, and it is suitable for incorporation into circuit simulators  相似文献   

3.
A new non-quasi-static (NQS) MOSFET model, which is applicable for both large-signal transient and small-signal ac analysis, has been developed. It employs a physical relaxation time approach to take care of the finite channel charging time to reach equilibrium and the effect of instantaneous channel charge re-distribution. The NQS model is formulated independently from the dc I-V and the charge-capacitor model, thus can be easily applied to any existing simulators. The model has been implemented in the newly released BSIM3 version 3, and comparison has been made among this model, common quasi-static (QS) SPICE models and PISCES two-dimensional (2-D) numerical device simulator. While predicting accurate NQS behavior, the time penalty for using the new model is only about 20-30% more than the common QS models. It is much less than the time required by other NQS models reported. Limitations and compromises between simplicity, efficiency and accuracy are also discussed  相似文献   

4.
A fully analytical model for the current-voltage (I-V) characteristics of HEMT's is presented. It uses a polynomial expression to model the dependence of sheet carrier concentration (ns) in the two-dimensional electron gas (2-DEG) on gate voltage (VG ). The resultant I-V relationship incorporates a correction factor α analogous to SPICE MOSFET Level 3 model and is therefore more accurate than models assuming a linear ns-VG dependence leading to square law type I-V characteristics. The model shows excellent agreement with experimental data over a wide range of bias. Further, unlike other models using nonlinear ns-VG dependence, it neither uses fitting parameters nor does it resort to iterative methods at any stage. It also includes the effects of the extrinsic source and drain resistances. Due to its simplicity and similarity in formulation to the SPICE MOSFET Level 3 model, it is ideally suited for circuit simulation purposes  相似文献   

5.
A new decoupled C-V method is proposed to determine the intrinsic (effective) channel region and extrinsic overlap region for miniaturized MOSFET's. In this approach, a unique channel-length-independent extrinsic overlap region is extracted at a critical gate bias, so bias-independent effective channel lengths (Leff) are achieved. Furthermore, the two-dimensional (2D) charge sharing effect is separated from the effective channel region. Based on this Leff and the associated bias-dependent channel mobility, μeff , the drain-and-source series resistance (RDS) can be derived from the I-V characteristics for each device individually. For the first time, the assumption or approximation for RDS and μeff can be avoided, thus the difficulties and controversy encountered in the conventional I-V method can be solved. The 2D charge sharing effect is incorporated into the bias-dependent RDS. This bias dependence is closely related to the drain/source doping profile and the channel dopant concentration. The proposed Leff and RDS extraction method has been verified by an analytical I-V model which shows excellent agreements with the measured I-V characteristics  相似文献   

6.
In this paper, a new approach of transistor modeling is developed for fast statistical circuit simulation in the presence of variations. For both the I-V and C-V characteristics of a transistor, finite data points are identified based on their physical meanings and their importance in circuit operation. The impact of process and design variations is embedded into these key points using analytical expressions. During the simulation, the entire I -V and C -V curves are interpolated from these points with simple polynomial formulas. This novel approach significantly enhances the simulation speed with sufficient accuracy. The model is implemented in Verilog-A to support generic circuit simulators. The accuracy and convergence of the proposed model are comprehensively evaluated through a set of benchmark circuits, including nand, a pass-gate, latches, AOI, ring oscillators, and an adder. Compared to SPICE simulations with the BSIM models, the simulation time can be reduced by 7 times in transient analysis and more than 9 times in Monte-Carlo simulations.  相似文献   

7.
研究中提出了用于描述HCI(热载流子注入)效应的MOSFET可靠性模型及其建模方法,在原BSIM3模型源代码中针对7个主要参数,增加了其时间调制因子,优化并拟合其与HCI加压时间(Stress time)的关系式,以宽长比为10μm/0.5μm5 V的MOSFET为研究对象,在开放的SPICE和BSIM3源代码对模型库文件进行修改,实现了该可靠性模型。实验表明,该模型的测量曲线与参数提取后的I-V仿真曲线十分吻合,因而适用于预测标准工艺MOS器件在一定工作电压及时间下性能参数的变化,进而评估标准工艺器件的寿命。  相似文献   

8.
奚雪梅  王阳元 《电子学报》1996,24(5):53-57,62
本文系统描述了全耗尽短沟道LDD/LDSSOIMOSFET器件模型的电压电压特性。该模型扩展了我们原有的薄膜全耗尽SOIMOSFET模型,文中着重分析了器件进入饱和区后出现的沟道长度调制效应,及由于LDD/LDS区的存在对本征MOS器件电流特性的影响。  相似文献   

9.
This work presents an RF model of an accumulation-mode MOS varactor with physical lumped elements derived from the device structure. The channel resistance was modeled by three resistance components to cover both accumulation and depletion regions with single equivalent circuit. With parameter values obtained by direct extraction, this model could accurately describe characteristics of the device without any optimization steps in the frequency range up to 18 GHz, as well as over a wide bias range. Due to the single topology, easy integration of the model into common circuit simulators is possible.  相似文献   

10.
A SPICE model is a tool for circuit designers to design their chip. As the design activity shifts from purely digital to increasingly analog/RF applications, an accurate model with smooth device characteristics becomes essential. BSIM3 gains popularity because of its capability to meet these challenges. As CMOS processing evolves and various tunneling/leakage currents begin to surface, companies are exploring BSIM4 for their immediate future use. Regardless of which model is selected, the entire QA flow must be executed before a model is released to the design community. The four essential steps are to ensure 1) there is no kink in the conductance and capacitance calculated in the model; 2) the process specifications are reflected in the model; 3) the trend of various parameters make sense as a function of channel width, length, and device temperature; and finally, 4) the figure of merit from simulating the benchmark circuit is consistent with previous models.  相似文献   

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