紫外告警技术综述

分析了紫外告警技术的原理和导弹的紫外辐射特性,探讨了紫外告警技术和设备的特点,概述了紫外型导弹告警设备的现状。     

紫外告警与红外告警在直升机上的应用对比

本文对紫外告警与红外告警这两种告警体制的原理及发展历程进行了全面剖析,并对其在直升机上的应用优劣进行了对比分析。从目前国内外对于紫外告警及红外告警的研究、使用和评估情况来看,两种告警体制各有自己的独特优势,并同时蓬勃发展。     

紫外告警技术现状及发展分析

讨论了紫外告警技术原理,研究了导弹紫外辐射特性和导弹紫外辐射相关的发动机尾焰高温物质以及尾焰中可燃性物质二次燃烧,介绍了国内外紫外告警装备的发展及现状,论述了从第一代概略型紫外告警装备到第二代成像型紫外告警装备的发展过程。最后,分析总结了紫外告警技术的发展动向。     

导弹逼近紫外告警技术的发展

导弹逼近紫外告警技术是利用“太阳光谱盲区”的紫外波段来控制导弹的火焰与尾焰，在微弱背景下探测出导弹。它具有隐蔽性好、虚警率低、不需低温冷却、凝视和告警器体积小、质量轻等优点。本文对国外导弹逼近紫外告警技术的最新进展作以综述。     

紫外型导弹逼近告警系统的发展

紫外型导弹五近告警系统由于有独特的优点，因而得到迅速发展，目前已成为最实用的导弹运近告警系统之一。本文概述了第一代、第二代紫外型导弹运近告警系统的研制概况和发展前景。     

车载光电告警装备的发展现状与分析

针对陆军车载光电探测告警系统的应用需求及发展现状,文章重点从车载红外告警、紫外告警、激光告警、雷达告警以及复合告警的特点、国内外在此方面的发展状况以及我国在各类车载光电告警系统研制中亟待解决的问题等几个方面进行了论述。最后总结了各种光电告警系统的发展趋势及其关键技术。     

光电侦察告警技术的现状与发展趋势

介绍了光电侦察告警技术的发展历程以及装备的研制、改进情况，指出了在现代战争中发展光电侦察告警技术的优势和重要性，重点探讨了激光侦察告警、红外侦察告警、紫外侦察告警和复合侦察告警技术的性能及其特点；最后分析了光电侦察告警技术的未来发展趋势。     

红外/紫外侦察告警技术

介绍了红外/紫外侦察告警技术的发展历程以及装备的研制、改进情况,指出了在现代战争中发展红外/紫外侦察告警技术的优势和重要性,重点探讨了红外/紫外侦察技术的性能及其特点;最后分析了红外/紫外侦察告警技术的未来发展趋势.     

导弹逼近光电告警系统发展综述

为了有效地对抗地空，空空导弹威胁，国外在５０年代中期就开始研制红外告警设备，目前已发展了三代产品；而紫外告警以其独特的优势迅猛发展，在不长的时期内历经两代技术革新。     

紫外告警技术

紫外告警是近20年发展起来的一种导弹告警技术。介绍了紫外告警技术及与其相关技术的发展情况,包括大气对紫外线的传输特性、目标和背景紫外辐射特性、紫外线探测器件和探测技术等研究发展情况,最后还介绍了紫外告警的战术应用。     

Controllable in-line UV sensor using a side-polished fiber coupler with photofunctional polymer

A novel ultraviolet (UV) sensor using evanescent field coupling between single-mode-polished fiber and photochromic dye-dispersed polymer waveguide was demonstrated. It was found that resonance wavelength shifts occurred due to variations in the refractive index of the photochromic dye-dispersed polymer waveguide relative to UV intensities. A spiroxazine dye was chosen as the overlay material because of its photochromic isomerization induced by UV irradiation. The wavelength responses of these sensors by UV exposure power were measured 0.18 and 0.25 nm/mW when UV was exposed for 5 and 10 s, respectively. The recovery time for the sensor was independent of UV exposure power, and 80% recovery time was shown 90 s.     

利用ITO微纳结构提高石墨烯紫外LED光提取效率

为了改善因为铟锡氧化物(ITO)薄层对紫外光具有高吸收率,从而导致石墨烯紫外LED低光提取效率(LEE)问题,采用ITO微纳结构(矩形和三角形)作为石墨烯紫外LED缓冲层的方法,利用时域有限差分法,对ITO微纳结构进行优化,并对石墨烯紫外LED进行了理论分析。结果表明,当矩形微纳结构厚度为160nm、占空比为0.7、周期为220nm时,在单层石墨烯下紫外LED的LEE可达10.668%;利用矩形微结构作为插入层相比于利用ITO薄层作为插入层的单层石墨烯紫外LED提高了45.06%;而当三角微纳结构在最优参量时,石墨烯紫外LED的LEE仅有6.64%,明显低于ITO薄层石墨紫外LED。该研究可为后续制备高光功率的紫外LED提供理论基础。     

多LED紫外光通信系统设计与性能分析

为了实现多LED紫外光通信系统,首先介绍了紫外光通信系统的理论知识,设计的发送端能采用直流驱动紫外光LED为光源,接收端采用滤光片和光电倍增管实现光电检测,详细介绍了紫外光通信系统相关电路的原理和设计方案,在不同条件下对系统进行了实验测试,并对通信距离和误码率进行了分析,随着LED个数及LED供电电流的增加,紫外光通信的传输距离增加,并且误码率减低,使得紫外光通信系统的性能得到了提高。结果表明:系统可以满足近距离无线紫外光通信在角度对准、空分复用及方便组网等方面的需求。     

基于日盲型AlGaN的紫外相机设计

在"日盲段"240～290 nm进行窄波段探测,具有背景干扰小的优势。相比于传统紫外探测器必须协同窄带滤光片工作,AlGaN具有固有窄波段控制和无需制冷两大优点。介绍了基于日盲型AlGaN焦平面器件的紫外相机的软、硬件设计。紫外相机由紫外透射式光学系统,日盲型AlGaN器件,偏置电路及驱动电路,低噪声前放、数据处理及传输单元构成,核心器件AlGaN采用背照式PIN阵列通过铟柱倒焊于硅基电容反馈跨导放大器(CTIA)读出电路的结构。紫外相机的设计指标为:光学口径80 mm,焦距130 mm,像元尺寸50μm,瞬时视场0.4 mrad,总视场3°,积分时间可控,帧率最高可达100帧/s。经初步室内测试,效果良好,对发展日盲型面阵AlGaN应用平台做出了有意义的探索和研究。     

UV nanoimprint lithography process optimization for electron device manufacturing on nanosized scale

Imprint specific process parameters like the residual layer thickness and the etch resistance of the UV polymers for the substrate etch process have to be optimized to introduce UV nanoimprint lithography (UV NIL) as a high-resolution, low-cost patterning technique for research and industry into electron device manufacturing. Additionally, UV NIL processes have to be compatible with conventional silicon (Si) semiconductor processing. Within this work, the minimization of the residual layer thickness by using a multi-drop ink-jet system, which was integrated into the imprint stepper NPS300 from S-E-T-(formerly SUSS MicroTec), in combination with a low viscous UV polymer from Asahi Glass Company is shown. The etch resistance of different UV polymers against the poly-Si etch process was increased by 50% with an appropriate post-exposure bake. A poly-Si dry etch process was used to pattern the gates of short channel MOSFETs. After optimizing the poly-Si etch, properly working short channel MOSFETs with a minimum gate length of about 90 nm were fabricated demonstrating successfully the compatibility of UV NIL with conventional Si semiconductor processing on nanosized scale.     

CdS紫外探测器芯片的制备研究

针对紫外探测器在紫外-红外双色探测器中的工程化应用需求,开展了Pt/CdS肖特基紫外探测器研究,通过对CdS晶片表面处理工艺、Pt电极制备及紫外芯片退火等关键技术进行优化研究,并对Pt/CdS肖特基紫外探测器性能进行测试分析。测试结果表明: Pt/CdS肖特基紫外探测器在0.3~0.5 μm下响应率大于0.2 A/W,对3~5 μm红外波长的平均透过率大于80%,很好地满足了紫外-红外双色探测器中的工程化应用要求。     

Inter‐laboratory comparison of UV‐light sources for testing of PV‐modules

Durability assessment of materials exposed to natural weathering requires accelerated testing for verification of the ultraviolet (UV) stability, especially for polymeric material. The type approval testing of photovoltaic (PV) modules according to the standards International Electrotechnical Commission (IEC) 61215 and IEC 61646 includes a so‐called UV‐preconditioning test with a total UV dose of 15 kWh/m² corresponding to natural weathering of about 3 months only. A serious UV test representing the service life needs to apply a much stronger UV‐intensity in a comparable way. Fraunhofer Institute for Solar Energy Systems performed an inter‐laboratory comparison of UV‐light sources in 13 accredited test labs and test centres of major PV module manufacturers. The most important topic was the spectral radiometric measurement of the used UV sources. Another main issue was the comparison with the integral measurements by the sensors used for control of the tests. Errors up to 120% were found. Copyright © 2015 John Wiley & Sons, Ltd.     

Investigation on UV photodetector behavior of RF-sputtered ZnO by impedance spectroscopy

Ag/ZnO/Ag thin films representing metal/semiconductor/metal ultraviolet (UV) photodetectors were successfully prepared by RF magnetron sputtering. A UV light emitting diode was used as an illuminating source at 365 nm. The current-voltage characteristics of the device under UV illumination showed an enhancement in the forward current. Device modeling was carried out using impedance spectroscopy. The resistance of the device decreased as the light was switched from dark to UV. Moreover, the device showed further decrease in resistance at a bias voltage of up to 2 V.     

Enhanced carrier confinement in AlInGaN-InGaN quantum wells in near ultraviolet light-emitting diodes

To increase carrier confinement, the GaN barrier layer was substituted with an AlInGaN quaternary barrier layer which was lattice-matched to GaN in the GaN-InGaN multiple quantum wells (MQWs). Photoluminescence (PL) and high-resolution X-ray diffraction measurements showed that the AlInGaN barrier layer has a higher bandgap energy than the originally used GaN barrier layer. The PL intensity of the five periods of AlInGaN-InGaN MQWs was increased by three times compared to that of InGaN-GaN MQWs. The electroluminescence (EL) emission peak of AlInGaN-InGaN MQWs ultraviolet light-emitting diode (UV LED) was blue-shifted, compared to a GaN-InGaN MQWs UV LED and the integrated EL intensity of the AlInGaN-InGaN MQWs UV LED increased linearly up to 100 mA. These results indicated that the AlInGaN-InGaN MQWs UV LED has a stronger carrier confinement than a GaN-InGaN MQWs UV LED due to the larger barrier height of the AlInGaN barrier layer compared to a GaN barrier layer.     

导弹主动段天基紫外探测像面照度建模与仿真

分析了导弹尾焰紫外辐射原理和能量传递方程,结合导弹主动段运动方程,建立了尾焰紫外辐射模型。考虑大气透过率和地球背景亮度的影响,得到导弹主动段尾焰紫外辐射与探测器像面辐照度关系。基于SBIRS-GEO 预警卫星的探测仿真,比较了不同探测波段下高、低弹道尾焰紫外辐射的像面辐照度变化。结果表明:紫外辐射在大气中的传输特性是影响像面辐照度变化的主要因素;相比于300~400 nm 波段,200~300 nm 波段可以提早发现目标、降低发现高度,更适宜作为探测波段。