Computer Modeling and Simulation Evaluation of High Power LED Sources for Secondary Optical Design

Proposed and demonstrated is a novel computer modeling method for high power light emitting diodes（LEDs）. It contains geometrical structure and optical property of high power LED as well as LED dies definition with its spatial and angular distribution. Merits and non-merits of traditional modeling methods when applied to high power LEDs based on secondary optical design are discussed. Two commercial high power LEDs are simulated using the proposed computer modeling method. Correlation coefficient is proposed to compare and analyze the simulation results and manufacturing specifications. The source model is precisely demonstrated by obtaining above 99% in correlation coefficient with different surface incident angle intervals.     

A review of the most recent progresses of state-of-art gallium oxide power devices

Until very recently, gallium oxide(Ga_2O_3) has aroused more and more interests in the area of power electronics due to its ultra-wide bandgap of 4.5–4.8 eV, estimated critical field of 8 MV/cm and decent intrinsic electron mobility limit of250 cm2/(V·s), yielding a high Baliga's figures-of-merit(FOM) of more than 3000, which is several times higher than GaN and SiC.In addition to its excellent material properties, potential low-cost and large size substrate through melt-grown methodology also endows β-Ga_2O_3 more potential for future low-cost power devices. This article focuses on reviewing the most recent advances ofβ-Ga_2O_3 based power devices. It will be starting with a brief introduction to the material properties of β-Ga_2O_3 and then the growth techniques of its native substrate, followed by the thin film epitaxial growth. The performance of state-of-art β-Ga_2O_3 devices, including diodes and FETs are fully discussed and compared. Finally, potential solutions to the challenges of β-Ga_2O_3 are also discussed and explored.     

Range Ambiguity Resolution Based on Phase Difference for High PRF Stepped-frequency Radar

A method based on the phase difference between two adjacent range profiles is proposed to resolve the range ambiguity caused by the high Pulse repetition frequency （PRF） in stepped-frequency radar. This method does not need multiple PRFs so as to simplify the hardware implementation structure. In order to decrease the effects of target motion and noise on the phase difference, the method and process are given in the paper, and the simulations verify its validity.     

Fabrication of High-power White LEDs and White Light Uniformity Testing

As the blue and yellow lights are complementary colors, a blue InGaN LED chip is coated hy a yellow phosphor film to generate white light based on luminescence conversion mechanism. The emitted light of a blue LED is used as the primary source for exciting fluorescent material such as cerium doped yttrium aluminum garnet with the formula Y3Al2O12 ： Ce^3＋ （in short： YAG ： Ce^3＋ ）. The matching of the spectrum of the blue LED chips and the YAG ： Ce^3＋ yellow phosphor is studied to improve the conversion efficiency. The packaging methods and manufacturing processes for high power single chip-white LEDs are introduced. The uniformity of the output white light is investigated. Based on the characteristics of the high power white LEDs, some approaches and processes are suggested to improve the light uniformity when they are fabricated. The effectiveness of those approaches on the improvement of LEDs is discussed in detail and some interesting conclusions are also presented.     

Application research on the sensitivity of porous silicon

Applications based on sensitive property of porous silicon (PSi) were researched. As a kind of porous material, the feasibility of PSi as a getter material was studied. Five groups of samples with different parameters were prepared. The gas-sensing property of PSi was studied by the test system and suitable parameters of PSi were also discussed. Meanwhile a novel structure of humidity sensor, using porous silicon as humidity-sensitive material, based on MEMS process has been successfully designed. The humidity-sensing properties were studied by a test system. Because of the polysilicon layer deposited upon the PSi layer, the humidity sensor can realize a quick dehumidification by itself. To extend service life and reduce the effect of the environment, a passivation layer (Si₃N₄) was also deposited on the surface of electrodes. The result indicated the novel humidity sensor presented high sensitivity (1.1 pF/RH%), low hysteresis, low temperature coefficient (0.5%RH/℃) and high stability.     

A special issue on Light-Emitting Diodes

As an emerging and energy efficient lighting technology,light-emitting diode (LED) based solid state lighting is expected to significantly reduce global energy consumption and green-house emission for its extraordinary characteristics compared with traditional light sources,including high luminous efficiency,small size,potentially high device and system reliability,long lifetime,etc.Since the LEDs are unable to be applied before being packaged,the packaging technologies are critically needed in terms of materials selection,process development,co-design with multi-physics consideration,integrated consideration of chip and packaging design.Packaging is therefore essential in enhancing the desired long-term reliability and realizing the full potentials of optical performance of LED devices,which still needs us to conduct more fundamental research.Over the decades,many novel packaging technologies have been proposed and some of them have been commercially applied,yet some of them are still under development.     

Gallium oxide: promise to provide more efficient life

Despite being the long-time mainstream semiconductor for both logic and power devices, Silicon is now facing its dilemma and limitation of scalability and material potential.Especially for power devices, people are demanding escalating efficiency with higher blocking voltage while its power consumption and heat generation are less. Constrained by its narrow bandgap of 1.14 eV, Silicon only has a critical breakdown field(E_c) of 0.3 MV/cm, yielding a Baliga figureof-merit(BFOM = ε×μ× E_c^3) of unity when normalized to itself. It is hence required that the dominating factor E_c should be as high as possible such that the BFOM will be hundreds or even thousands of times when compared to Silicon so as to minimize the conduction loss. Beta-Gallium Oxide(β-Ga_2O_3) with decent μ of 250 cm2/Vs, ultra-wide bandgap of4.8 eV and high critical E_c of 8 MV/cm, yielding a superior high BFOM of more than 3000. Therefore, system made withβ-Ga_2O_3 can be thinner, lighter and capable of handling more power than the one with Silicon. In addition, low-cost and large size substrate through melt-grown method endows β-Ga_2O_3 more potentials as cost-effective power devices. After resolving the low thermal conductivity issue,unipolar devices made with ultra-wide bandgap β-Ga_2O_3 are promised to make power transition and our life more efficient.     

Fabrication of optical fiber sensor based on double-layer SU-8 diaphragm and the partial discharge detection

In this paper, a partial discharge detection system is proposed using an optical fiber Fabry-Perot(FP) interferometric sensor, which is fabricated by photolithography. SU-8 photoresist is employed due to its low Young’s modulus and potentially high sensitivity for ultrasound detection. The FP cavity is formed by coating the fiber end face with two layers of SU-8 so that the cavity can be controlled by the thickness of the middle layer of SU-8. Static pressure measurement experiments are done to estimate the sensing performance. The results show that the SU-8 based sensor has a sensitivity of 154.8 nm/kP a, which is much higher than that of silica based sensor under the same condition. Moreover, the sensor is demonstrated successfully to detect ultrasound from electrode discharge.     

Optical pulse shaping based on a double-phase-shifted fiber Bragg grating

We propose a compact dual-band bandpass filter(BPF)based on one-dimensional porous silicon(PS)photonic crystal by electrochemical etching.By inserting three periods of high and low reflective index layers in the center of porous silicon microcavity(PSM),two sharp resonant peaks appear in the high reflectivity stop band on both sides of the resonance wavelength.Through simulation and experiment,the physical mechanisms of the two resonance peaks and the resonance wavelength are also studied.It is found that the resonance wavelength can be tuned only by adjusting the effective optical thickness(EOT)of each PS layer,in which different resonance wavelengths have different widths between the two sharp resonance peaks.Besides,the analysis indicates that oxidization makes the blue shift become larger for high wavelength than that for low wavelength.Such a fabricated BPF based on PS dual-microcavity is easy to be fabricated and low cost,which benefits the application of integrated optical devices.     

Ruby (Al_2O_3∶Cr~(3+)) Fluorescence Thermometer Using PLD-PMSR Technique

A kind of fluorescence fiber-optic thermometer is devised based on the solid-state ruby fluorescence material. The characteristics of fluorescence material absorption and emission are analyzed, and the fiber-optic temperature measurement probe in ruby is developed. This system is particularly adaptable to the temperature measurement in the range of 20℃ to 600℃. During the experiment, this method is proved to be useful to temperature measurement with high resolution and precision.     

碳化硅材料发光特性研究进展

碳化硅作为一种优秀的微电子材料,在高频、高温、大功率、强辐射环境中颇具应用潜力。然而由于其间接带隙的特点,碳化硅LED不能像氮化镓、磷化镓LED那样有效发光,因此人们竞相研究能提高碳化硅发光效率的方法,其中包括非晶碳化硅、多孔单晶碳化硅、用CVD方法制备的纳米碳化硅和用离子注入方法制备的多孔碳化硅。在最近几年,这些研究已取得巨大进展,从而使其成为适用于发展中的OEIC技术的颇具潜力的材料。     

SiC电力电子器件研究现状及新进展

由于硅材料本身的限制,传统硅电力电子器件性能已经接近其极限,碳化硅(SiC)器件的高功率、高效率、耐高温、抗辐照等优势逐渐突显,成为电力电子器件一个新的发展方向.综述了SiC材料、SiC电力电子器件、SiC模块及关键工艺的研究现状,重点从材料、器件结构、制备工艺等方面阐述了SiC二极管、金属氧化物半导体场效应晶体管(MOSFET)、结晶型场效应晶体管(JFET)、双极结型晶体管(BJT)、绝缘栅双极晶体管(IGBT)及模块的研究进展.概述了SiC材料、SiC电力电子器件及模块的商品化情况,最后对SiC材料及器件的发展趋势进行了展望.     

碳化硅功率器件高密度互连技术研究进展

相比于硅,SiC材料因具有宽禁带、高导热率、高击穿电压、高电子饱和漂移速率等优点而在耐高温、耐高压、耐大电流的高频大功率器件中得到了广泛应用。传统的引线键合是功率器件最常用的互连形式之一。然而,引线键合固有的寄生电感和散热问题严重限制了SiC功率器件的性能。文章首先介绍了硅功率器件的低寄生电感和高效冷却互连技术,然后对SiC功率器件互连技术的研究进行了综述。最后,总结了SiC功率器件互连技术面临的挑战。     

碳化硅器件发展概述

概要介绍了第三代半导体材料碳化硅(SiC)在高温、高频、大功率器件应用方面的优势,结合国际上SiC肖特基势垒二极管,PiN二极管和结势垒肖特基二极管的发展历史,介绍了SiC功率二极管的最新进展,同时对我国宽禁带半导体SiC器件的研究现状及发展方向做了概述及展望。     

SiC MOSFET栅极驱动电路研究综述

凭借碳化硅(SiC)材料的宽禁带、高击穿电场、高电子饱和速率和高导热性等优点,SiC MOSFET广泛应用在高压、高频等大功率场合。传统基于硅(Si)MOSFET的驱动电路无法完全发挥SiC MOSFET的优异性能,针对SiC MOSFET的应用有必要采用合适的栅驱动设计技术。目前,已经有很多学者在该领域中有一定的研究基础,为SiC MOSFET驱动电路的设计提供了参考。对现有基于SiC MOSFET的PCB板级设计技术进行了详细说明,并从开关速度、电磁干扰噪声以及能量损耗等方面对其进行了总结和分析,给出了针对SiC MOSFET驱动电路的设计考虑和建议。     

国内LED衬底材料的应用现状及发展趋势

从材料特性出发,分析了氮化镓基LED用衬底材料的性能需求,主要分析了蓝宝石和碳化硅衬底在LED制作中的应用,并描述了当前的发展状态以及未来的发展趋势。     

航天反射镜材料SiC

航天反射镜材料的一些优选性质包括密度低、弹性模量高、热膨胀系数低及热传导率高。与传统光学材料相比，碳化硅(SiC)具有优异的机械和热性能，被认为是引入注目的反射镜材料。本文概述了SiC的基体成形工艺和机械精加工工艺，讨论了其优缺点，并概述了国内外的发展现状。     

SiC半导体材料和工艺的发展状况

碳化硅(SiC)是一种宽禁带半导体材料,适用于制作高压、高功率和高温器件,并可以工作在直流到微波频率范围.阐述了SiC材料的性质,详细介绍了SiC器件工艺(掺杂、刻蚀、氧化及金属半导体接触)的最新进展,并指出了存在的问题及发展趋势.     

Ab initio electronic transport study of two-dimensional silicon carbide-based p-n junctions

Two-dimensional silicon carbide (2d-SiC) is a viable material for next generation electronics due to its moderate, direct bandgap with huge potential. In particular, its potential for p-n junctions is yet to be explored. In this paper, three types of 2d-SiC-based p-n junctions with different doping configuration are modeled. The doping configurations refer to partially replacing carbon with boron or nitrogen atoms along the zigzag or armchair direction, respectively. By employing density functional theory, we calculate the transport properties of the SiC based p-n junctions and obtain negative differential resistance and high rectification ratio. We also find that the junction along the zigzag direction with lower doping density exhibits optimized rectification performance. Our study suggests that 2d-SiC is a promising candidate as a material platform for future nano-devices.     

基于SiC材料的空间相机非球面反射镜结构设计

针对空间相机中优质轻型光学反射镜对材料提出的要求，详细讨论了设计基于SiC材料空间反射镜的一系列问题，包括径厚比的选择、支撑点数量、轻量化结构形式、材料特性匹配等，提出了一种背部半封闭、三角形孔的轻量化形式，并设计制造了 Φ600 mm轻量化SiC反射镜实验件。抛光后反射镜面形精度优于λ/20 rms。为验证重力变形的影响，将反射镜分别旋转了90°和180°，用Zygo干涉仪检验，3个方向检测结果误差均小于λ/100 rms。在此基础上设计完成了某空间相机中的SiC非球面主镜、次镜、第三镜，结果表明基于SiC材料的反射镜在重力变形、谐振频率、热变形等方面均能满足使用要求，而且与玻璃材料相比，在很大程度上降低了重量。