多用户OFDM系统中一种新颖的自适应功率分配方案

针对多用户正交频分复用(OFDM)系统自适应资源分配的问题,提出了一种新的自适应子载波分配方案。子载波分配中首先通过松弛用户速率比例约束条件确定每个用户的子载波数量,然后对总功率在所有子载波间均等分配的前提下,按照最小比例速率用户优先选择子载波的方式实现子载波的分配;在功率分配中提出了一种基于人工蜂群算法和模拟退火算法(ABC-SA)相结合的新功率分配方案,并且通过ABC-SA算法的全局搜索实现了在所有用户之间的功率寻优,同时利用等功率的分配方式在每个用户下进行子载波间的功率分配,最终实现系统容量的最大化。仿真结果表明,与其他方案相比,所提方案在兼顾用户公平性的同时还能有效地提高系统的吞吐量,进而证明了所提方案的有效性。     

基于公平度门限的多用户OFDM系统自适应资源分配算法

在传统的子载波分配过程中,具有优先权的用户将优先选择最好的载波,这将导致载波利用效率下降.许多改进算法通过牺牲一定的公平性来提升容量并降低复杂度,但是这可能会使用户间无法达到所要求的公平性.针对这些问题,提出了一种基于公平度门限的载波和功率自适应分配算法.在载波分配过程中,通过公平度门限来决定载波分配优先级,从而实现容量和公平度的粗略折中.载波分配后利用粒子群(PSO)算法进行功率分配来达到所要求的公平度门限.实验结果表明,该算法在满足所要求公平度门限的同时提升了系统容量.     

OFDMA协同通信系统子载波和功率联合分配算法

针对OFDMA协同通信系统资源分配仅考虑平均功率下的子载波分配,中继存在未用功率情况,研究子载波分配后中继剩余功率分配问题。提出一种既满足业务QoS需求又兼顾用户间公平性的子载波和功率联合分配算法,并设计一种基于二分法的功率注水分配方案。测试表明,该算法能在满足业务QoS需求及用户公平性的同时,提升系统容量。     

一种兼顾速率公平的多用户子载波功率联合分配算法

随着无线通信技术的迅猛发展,无线资源的需求量越来越大,用户对服务质量的要求也越来越高,因此,未来通信系统需要智能地在用户服务质量(QoS)需求和无线资源限制间进行一个有效的折中。为了提高认知无线网络频谱利用率,在可用子载波、次级用户功率预算及公平性等约束条件下,基于速率自适应(RA)准则,提出了在认知正交频分复用(OFDM)系统中兼顾速率公平的多用户子载波功率联合分配算法。该算法将子载波和功率分配分为两步,在兼顾各次级用户速率公平性的同时,最大化链路容量。仿真结果表明,该联合分配算法在系统吞吐量与次级用户速率公平性之间可以取得有效的折中。     

一种新型的OFDMA比例公平资源分配算法

针对已有算法对系统容量和高公平性兼顾较差的情况,提出了一种满足公平性的系统容量最大化资源分配算法。在子载波分配中通过建立信道效率控制模型,给当前用户分配信道效率最高的子载波,将信道增益低于门限值的子载波重新分配,改进了最大化最小(max-min)用户速率模型。在功率分配中将系统模型转化成用注水线表示的数学模型,首先求解各用户的注水线,再求解各用户的功率分配,保证了用户间比例公平性。两种信噪比情形下的仿真和分析表明,整个方案计算复杂度稍低,系统容量获得较大提升,并且用户间的公平性始终为1。     

改进的多用户OFDM系统子载波和比特分配算法

针对多用户正交频分复用（OFDM）系统资源分配问题,提出了一种改进的基于边缘自适应（MA）准则的子载波和比特分配算法。在采用比例公平准则为每个用户分配子载波集合基础上,以用户速率最大者-最小者（Max-Min）子载波交换为原则进行子载波调整,使用户功率递减同时兼顾用户的公平性;通过对信道状态信息进行判断,利用贪婪算法将用户子载波分配的比特取整,以实现系统功率最小化。实验结果表明,本文提出的改进次优算法的计算复杂度较传统分步算法稍高,但仍远低于最优算法,其系统性能得以提升,且接近最优算法。     

基于比例公平原则的多用户MIMO-OFDM系统资源分配

提出了一种基于比例公平原则提高MIMO-OFDM系统吞吐量的子载波和功率分配算法.它在总功率和误比特率的约束下,以获取最大系统吞吐量为目标,同时为兼顾用户间资源享用的公平性,根据用户速率成比例推导出了子载波分配限制准则.仿真结果表明,本算法不仅可满足不同用户的速率要求,而且平衡了容量最大化和用户间公平性的矛盾,同时计算...     

OFDM中基于信道变化载波分配算法

OFDM系统利用用户的多样性,根据信道状态对系统中的子载波资源进行动态的分配,有效的提高了系统的容量。最大化系统容量的子载波分配算法,忽略了用户之间的公平性。使某些信道状态不好的用户由于没有被分配子载波,不能进行数据的传送。针对这一问题提出一种新的子载波的分配方法,在有效保证系统容量的前提下,通过确保每个用户分配到的子载波数目,兼顾了用户之间资源分配的公平性。     

考虑用户优先级的OFDMA下行链路自适应子载波分配

针对OFDMA下行链路系统,在总功率以及用户数据速率成比例的约束下,以获取整个系统容量极大化为准则,提出一种考虑用户优先级的自适应子载波分配算法.该算法初始分配时允许每个用户根据用户数据速率的相对比例以及自己的信道状态在所有子载波上独立的进行最优选择,当出现多个用户同时选择一个子载波,即出现冲突时,由平均信道增益的大小来决定用户选择该子载波的优先级.文中分别研究了平均信道增益大者为高优先级以及平均信道增益小者为高优先级的两种冲突解决办法,仿真结果表明,由平均信道增益小的用户来优先选择冲突子载波的算法综合考虑了公平性和频谱效率,与系统容量上限相比,性能损失较小,复杂度低,速度快,能够满足实时要求.     

OFDM系统中一种多用户自适应资源分配算法

针对OFDMA系统中各个用户传输速率受限的情况下,最大化系统容量问题,提出了一种资源分配的实现算法.该算法首先根据每个用户发送的比特数目要求确定用户需要占用的子载波数,将最优的若干个子信道分配给用户后,通过比较各个用户内部子信道之间的差异调整被几个用户同时占用的子信道.最后用赋初值的贪心算法为各个用户分配比特、功率.仿真结果表明,该算法复杂度较低,系统容量较大,且实现了用户之间的公平性.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and sub-pixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.