基于C-V,I-V,Q-V特性的铁电电容新模型

推导出描述铁电电容电气特性的新模型.铁电电容可以等效为开关电容(电畴电容)和非开关电容(普通线性电容)的并联,而电畴电容可以看作是由电偶极子组成的铁电材料、上电极和下电极组成.根据实验测试的铁电电容的C-V特性,选定电偶极子矫顽电压的概率密度函数为t分布,从而推导出只用6个参数描述的铁电电容的C-V,I-V和Q-V关系式,根据这些关系式仿真的结果与实验结果基本吻合.     

铁电薄膜在热 电 力耦合场下的本构模型

为了更好地描述铁电薄膜在外场下的非线性畴变行为,该文提出了铁电薄膜在热-电-力耦合场下的本构模型。该模型基于细观力学模型,认为电畴自由能的改变提供电畴翻转的动力。在铁电材料的本构关系中加入了铁电薄膜制备过程中产生的残余应变项,以便描述铁电薄膜材料在外加热 电 力耦合场下的非线性行为。模型的理论计算结果与实验结果相符,并与其他模型中的计算结果一致。     

铁电存储器1T单元C-V特性的计算机模拟

依据传统的铁电材料的P-E特性建模的方法,引入电压影响因子,得到了更为适合的P-V特性的新模型。另外,通过对P-V特性的分析、整合,从理论上得到了铁电存储器内铁电电容的C-V特性。从而系统地建立铁电存储器IT单元特性模型,该模型简单、准确、可移植性强。通过计算机模拟得到的仿真结果和现实器件特性结果相比对,验证了模型的正确性。     

MFIS结构的C-V特性

研究了运用SOL-GEL方法制备的Au/PZT(铅锆钛)/ZrO2/Si结构电容即MFIS(Metal/Ferroelectr c/Irsulator/Semiconductor)电容的方法,并对其进行了SEM、C-V特性测试及ZrO2介质层介电常数分析.研究了C-V存储窗口(Memory WindoW)电压与铁电薄膜和介质层厚度比的关系,得出MFIS电容结构中最佳铁电薄膜和介质层厚度比为7 10左右,在外加电压5V-+5V时存储窗口可达2.52V左右.     

全硅化物金属栅MOS电容的C-V测量技术研究

本文研究了薄栅氧MOS电容C-V特性测量方法和电容模型的适用性。当氧化层漏电较大时,采用二元并联或二元串联简单模型不能准确测量得到MOS电容真实值,需采用并联电导和串联电阻的三元模型或进一步考虑串联电感的四元模型,进行双频率测试。本文在Ni全硅化物（FUSI）金属栅MOS结构上用双频率技术分别采用三元和四元模型进行了测量,结果表明,三元模型测量得到MOS电容仍具有一定的频率依赖性,而采用四元模型得到的MOS电容几乎没有频率依赖性,即更接近于真实值。本文还分析和试验了Ni FUSI栅MOS电容的面积对测试准确度的影响。结果表明,减小MOS电容的面积,可以有效地减小电容模型损耗因子,提高测量准确度,电容频率依赖性降低,在一定条件下,采用简单二元串联模型就可以得到可靠的C-V特性曲线。用考虑量子效应修正的NCSU C-V计算软件分析获得的电容值可计算出栅介质厚度。另外,本文研究了超薄栅氧上Ni FUSI栅MOS电容的准静态C-V测试和光照高频C-V测试。结果表明,对于超薄栅氧由于其漏电增大,其漏电流已明显干扰准静态C-V测试中的位移电流,严重影响电容测试的准确性;而采用光照高频C-V可避免漏电流的影响,较准确地测得MOS电容的低频C-V特性,为全硅化反应完成与否提供判断依据,为研究SiO2/Si界面态特性提供工具和手段。     

(p)nc-Si∶H/(n)c-Si异质结变容二极管

采用等离子体增强化学气相沉积技术和电子束蒸发技术制备了一种新型的线性缓变异质结变容二极管——Au/Cr合金（电极）/multi-layer(p)nc-Si∶H/(n)c-Si/（电极）Au/Ge合金结构．I-V，C-V，C-f以及DLTS的测试结果表明：其电容变化系数远大于单晶硅线性缓变异质结的电容变化系数，正向导电机制符合隧穿辅助辐射复合模型，这是nc-Si∶H层中nc-Si晶粒的量子效应所致；反向电流主要由异质结中空间电荷区的产生电流决定，且反向漏电流小，反向击穿电压高，表现出较好的整流特性．     

铁电存储场效应晶体管I-V特性的物理机制模拟

文章讨论的模型主要描述了铁电存储场效应晶体管（FEMFET）的I-V特性。从理论结果可反映出几何尺寸效应和材料参数对晶体管电特性的影响。传统的阈值电压的概念巳不再适用，由于铁电层反偏偶极子的开关作用，自发极化的增加对存储器的工作状态产生很小的影响。该模型可用于设计和工艺参数的优化，并由直观原型的方法得到了验证。     

一类零电流谐振开关电容变换器的特性分析

具有零电流开关特性的谐振开关电容变换器是开关电容变换器的一种新拓扑形式.本文着重分析电路寄生参数和变换器运行条件对该类谐振开关电容变换器稳态特性的影响,推出变换器输出电压和效率的数学表达式,为研究负载或输入电压变化时变换器的输出性能提供了分析和设计依据.基于输出电压表达式,还提出谐振开关电容变换器的频率控制方案.全文以一个降压式谐振开关电容变换器为例详细说明公式的推导过程,并将此稳态特性分析推广到其它类型的谐振开关电容变换器.最后,文中设计了一台12V/5V/2.5A降压式谐振开关电容变换器样机,实验结果验证了本文的理论分析结果.     

铁电液晶光地性的电路级模拟

针对铁电液晶（FELC）的简单物理结构模型，借助可变电流源来刻画因指向矢的转动而引起的电流变化，构造出相应的等效电子电路（宏模型），将电路级仿真系统扩展到光电混合集成回路，提出采用Pspice电路级分析模拟软件，通过控制模型参数，应用不同信号（方波、正弦波、单或双极性脉冲等）激励源，分别就铁电液晶的端口电特性和光电响应特性实施了动态仿真研究。FELC模型开关特性的分析结果与已报道的理论与实验基本一致，并显示出良好的记忆特性。     

一种基于损失电压分析的开关电容功率转换器静态模型

介绍了一种适用于多相交错开关电容功率转换器的静态模型。分析了电容与电容之间的电荷传递行为,将开关电容功率转换器中的电荷再分配损耗和开关导通损耗等价地描述为电荷传递子过程的电压损失。该模型可以简便、准确地描述任意开关频率下开关电容功率转换器的等效输出电阻。同时,运用了一种新的“比例电流近似”方法,建立了带电流负载时的电荷传递模型,用以描述和分析负载和输出去耦电容对电容功率转换器静态特性的影响。相比于传统模型,提出的模型在中等开关频率下能准确地描述开关电容功率转换器的静态特性,同时能准确地描述多相交错控制中开关电容功率转换器的输出电压纹波。     

GEMNET: a generalized, shuffle-exchange-based, regular, scalable,modular, multihop, WDM lightwave network

GEMNET is a generalization of shuffle-exchange networks and it can represent a family of network structures (including ShuffleNet and de Bruijn graph) for an arbitrary number of nodes. GEMNET employs a regular interconnection graph with highly desirable properties such as small nodal degree, simple routing, small diameter, and growth capability (viz. scalability). GEMNET can serve as a logical (virtual), packet-switched, multihop topology which can be employed for constructing the next generation of lightwave networks using wavelength-division multiplexing (WDM). Various properties of GEMNET are studied     

Thermodynamics of copper matte converting: Part III. Steady-state volatilization of Au,Ag, Pb,Zn, Ni,Se, Te,Bi, Sb,and As from slag,matte, and metallic copper

A comprehensive compilation of various thermodynamic data required for a complete analysis of copper matte converting reactions is presented. The data comprise estimated free energies of formation for such gases as SeO, SeS, TeO, TeS, BiO, BiS, SbO, SbS, AsO, and AsS, as well as activity coefficients in dilute copper alloys and vapor pressures of various elements and compounds. The volatilization of minor elements in steady-state reactors comprising gas and several condensed phases is mathematically formulated, and a parameter which governs the volatilization in such reactors is defined and named volatilization constant. The vapor pressures of various volatile species are calculated thermodynamically for the Noranda Process reactor by assuming equilibrium conditions. The volatilization constants of various minor elements are expressed explicitly as functions of oxygen and sulfur activities. Formerly Associate Professor, Department of Metallurgical Engineering, University of Utah, Salt Lake City, UT     

PBX技术.市态.营销.选购

本文介绍了ＰＢＸ交换机的技术及市场需求态势。并提出ＰＢＸ产品的营销要素及其用户在选购时应遵循的原则。     

Novel planar, square-shaped, dielectric-waveguide, single-, and dual-mode filters

This paper presents a novel concept of a square-shaped dielectric-waveguide resonator, which can easily realize a dielectric-waveguide cross-coupled filter or a dielectric-waveguide dual-mode filter, using the conventional printed circuit board (PCB) process. This planar dielectric-waveguide resonator has a higher Q value than a microstrip resonator. The physical mechanisms of both single- and dual-mode filters are elucidated. Some new coupling structures are developed for undergoing the PCB process. Filter design procedures are detailed. Design curves for the coupling coefficients of internal- and external-coupling structures are determined by full-wave finite-element-method electromagnetic calculations. Measurement results are highly consistent with theory for all trial filters. This study offers an effective means of producing low-cost high-performance planar circuit filters.     

Bits, symbols, bauds, and bandwidth

The use of clear, concise, and unambiguous language in telecommunications engineering is vital to communicate a desired meaning and understanding. Terminology should be based on rigorous engineering principles and traceable to well known and dependable sources. This article deals with four everyday terms commonly encountered in the popular semi-technical press as well as in serious engineering periodicals. The misuse of these and other terms can lead to low-balled cost proposals, court litigation, and patent infringement cases. Imagine how an engineering student can be confused when she/he typically encounters bandwidth measured in bits per second     

人工智能时代“微机原理与接口技术”教学探讨

本文简述了在人工智能时代，我们的“微机原理与接口技术”课程教学团队基于线下线上混合教学模式，开展微机原理与接口技术的关键知识单元讲解的同时，实时课程思政，讲好微机原理的新故事；如何培养学生自主探索式学习技能，在课程基本知识单元学习的基础上扩展延伸相关深度学习、GPU技术、Python语言、FPGA技术等人工智能方面的知识单元的探究与学习，使得课程学习与人工智能的前沿发展相结合，理论联系实际，吸引和培养学生对该课程学习的兴趣和整体知识面扩展，这对于我们培养具有自主创新的科学探索精神的高素质专业人才具有重要的现实意义。