掺Co和Cr的Fe3B／Pr2Fe14B型纳米复合磁体的磁性能与微观结构

有关Fe3B／Pr2Fe14B型纳米复合磁体的磁性能和微观结构的研究已有报导。增加Pr元素，增强了Pr4＋xFe78-xB18和Pr4＋xFe76-xCr2B18（X=0，0．5，1）合金的矫顽力和磁能积，而添加Co和Cr更进一步完善了其硬磁性能。样品Pr4Fe71Co5Cr2B8合金：Mr（～1．31T），He（-265kA／m），（BH）max（-115．41kJ／m^3）和Pr5Fe10Co5Cr2B18合金：Mr（-0．97T），He（-385kA／m），（a11）max（-86．21kJ/m^3）分别在628℃和658℃的高温下煅烧10分钟即可获得最佳磁性能。用Tb代替部分Pr完善了Pr4Tb1Fe70Co5Cr2B18合金的整体磁性能，达到Mr（-1．14T），He（-439kA／m），（BH）max（-119．4kj/m^3），同时也将最佳煅烧温度降至628℃。三维原子探头（3DAP）分析显示Cr在Fe3B的软磁相被隔离，而Co在Pr2F314B的硬磁相具有更高的含量。     

纳米组织的高强度镁材

铁之类3d过渡金属显示出的磁致伸缩大约为10^-6-10^-5,而Mn3CuN则可产生大至0．2％（10^-3）的大磁致伸缩。以过渡金属为基的大磁致伸缩合金,有Fe3Pt、Ni2MnGa等金属间化合物,它们都是由于热弹性型马氏体相中的孪晶在磁场作用下引起再排列而产生的磁致伸缩。因此,可以把Mn3CuN看作是孪晶型磁致伸缩合金,同时它也是一种“铁磁性形状记忆合金”,是一种资源丰富的廉价材料。     

铁磁性微晶玻璃热种子材料的研制

采用基础玻璃熔融析晶法制备铁磁性微晶玻璃热种子材料,其中基础玻璃的组成以Fe2O3-CaO-SiO2为主体并添加少量B2O3和P2O5。借DTA,XRD分析确定了合理的热处理制度,制备了以Fe3O4为主晶相的微晶玻璃,并对其磁性能及生物活性进行了试验。结果表明:所得的微晶玻璃材料单位质量的磁化强度达到22.6A·m–1·g–1,且能生成羟基磷灰石,故材料具有生物活性。     

Fe_(74)Co_xY_(6-x)B_(20)合金的热稳定性和磁性

采用单辊快淬法制备合金薄带Fe74CoxY6-xB20(粒子数分数x=2,3,4)合金系,取不同的温度对合金进行热处理,用X射线衍射(XRD),差热分析仪(DSC),振动样品磁强计(VSM)等测试手段对样品的晶化过程、热性能和磁性能进行研究。结果表明:制备的Fe74CoxY6–xB20均为非晶合金,Fe74CoxY6-xB20(x=2,3,4)非晶合金的晶化激活能分别为473.7,583.0和570.1kJ/mol,Fe74Co3Y3B20非晶合金热稳定性最好。非晶合金Fe74CoxY6-xB20(x=2,3,4)的饱和磁化强度MS分别为110,105和109A·m2·kg–1,矫顽力都较低,适量地添加Co提高了合金的非晶形成能力和磁性能。     

低温烧结Mn掺杂Mg-Cu-Zn铁氧体研究

利用溶胶-凝胶自燃烧法合成了-系列低温烧结Mn掺杂Mg—Cu—Zn铁氧体(Mg0.2Cu0.2Zn0.6O)(Fe2-x，MnxO3)0.97(x=0,0．01，0．03，0．05，0．07)。该文对低温烧结Mn掺杂Mg—Cu—Zn铁氧体的成相，致密化过程及锰含量对其磁性能和显微结构的影响进行了研究。研究发现，具有较低磁致伸缩系数的Mg—Cu—Zn铁氧体呈现出比Ni—Cu—Zn铁氧体更好的磁性能。因此，低温烧结的Mg—Cu—Zn铁氧体有望替代Ni—Cu—Zn铁氧体而用作多层片式电感材料。在一定Mn掺杂范围内,Mn掺杂对Mg—Cu—Zn铁氧体磁性能的改进，主要是通过其对材料内部磁致伸缩系数和内应力的调控来实现的,而不是通过对微观结构的影响而获得的。     

Mn在HDDR各向异性NdFeCoB磁粉中的作用

采用HDDR(氢化–歧化–脱氢–再复合)技术制备NdFeCoB合金磁各向异性磁粉。研究了元素Mn对NdFeCoB合金HDDR磁粉的磁性能和磁各向异性的影响。结果表明:加入x(Mn)为2%以下的Mn元素没有改变NdFeCoB合金的相组成,但可提高NdFeCoB合金各相在氢气中的稳定性:当加入x(Mn)从0增加到2%时,NdFeCoB磁粉的内禀矫顽力Hcj从700 kA/m降低到450 kA/m,而NdFeCoB磁粉的磁各向异性DOA值从0.22增加到0.45。     

NaxCoO2（0．75≤x≤1．0）中超结构的透射电镜研究

近期 ,日本科学家Takada等发现了新型层状水合物超导体Na0 3 CoO2 ·1 3H2 O[1] 。该超导体具有层状结构 ,属于强关联体系 ,由于它在导电性和晶体结构上均类似于高温超导体 ,所以引起了科学界的广泛关注。我们用传统的固态反应法得到其母体NaxCoO2[2 ] ,并对其进行了透射电子显微镜研究。图a和b是Na0 75CoO2 的分别沿 [0 10 ]和 [0 0 1]带轴的电子衍射图 ,所有衍射斑点都能准确地指标化 ,分析表明该化合物为六方晶系 ,其空间群为P6 3 mmc ,晶胞参数为a =0 2 8nm ,c =1 0 92nm。图c和d是温度为 10 0K时所拍摄的电子衍射花样 ,显示…     

添加Mn对激光制备Al1.3FeCoNiCuCr涂层组织和性能的影响

通过预置法实现在921A钢上激光熔覆制备高熵合金Al1.3FeCoNiCuCr涂层, 研究了以Mn为杂质元素时, 不同添加量对高熵合金组织、相结构和性能的影响。结果表明, 单纯Al1.3FeCoNiCuCr微观组织为简单的枝晶组织, 涂层仅由bcc相和fcc相组成, 没有金属间化合物。随着Mn的增加, Al、Ni和Cu的含量相应提高, Fe和Cr的含量则逐渐降低, 总体趋向于更加接近设计的成分;和所有其它元素不同之处是, Al明显偏析于枝晶内。XRD分析发现, bcc相的相对强度随Mn的增加而下降, 当Mn添加量达到w(Mn)＝3%时, bcc相基本消失。此外, Al1.3FeCoNiCuCr涂层显微硬度随着Mn含量的增加小幅降低, 当Mn添加量由0增加到w(Mn)＝4%时, 其平均显微硬度由HV0.2 581逐渐降低到HV0.2 547。     

在二氧化硅衬底上制备磁光Ce：YIG薄膜用于磁光波导型器件

对Ce1YIG磁光薄膜的制备过程及磁光性能进行了详细的研究．用RF磁控溅射法在二氧化硅的基片．上淀积Ce1YIG薄膜，再对此薄膜进行晶化处理，以得到具有磁光性能的Ce1YIG薄膜．本文讨论了晶化过程中，Ce1YIG薄膜微观结构的变化对其磁光性能的影响．结果表明：采用波长为630nm的可见光测量，薄膜的饱和法拉第旋转系数θF为0．8deg／μm．同时，晶化薄膜易磁化方向为平行于膜面方向，其居里温度点为220℃．所得Ge1YIG薄膜的参数表明：所制备的薄膜适宜于制备波导型磁光隔离器．     

Cu、Zn掺杂对Co2Y软磁铁氧体性能的影响

介绍了通过掺杂Cu、Zn离子对Co2Y(Ba2Co2Fe12O22)型平面六角结构软磁铁氧体的成相及其性能的影响。采用传统的固相反应法制备样品，Ba2Co1.2-xZnxCu0.8Fe12O22(x=0-1.2)的合成温度低，成相温度范围比较宽，易于成相。在甚高频段，对Ba2Co1.2-xZnxCu0.8Fe12O22的磁性能、介电性能及改善进行了深入的探讨。     

Growth mechanism of iron nanoparticles on (0 0 0 1) sapphire wafers

Laser ablation of a high purity (99.7%) iron target was used to accomplish the depositions of iron nanoparticles on the (0 0 0 1) face of single crystal sapphire wafers. The nanoparticles were characterized in situ by means of X-ray photoelectron spectroscopy (XPS). The growth mechanism was determined by applying the QUASES-Tougaard methodology to the extended part of the background intensity of the Fe KMM peak in XPS spectra. The heights of nanoparticles obtained are between 3.5 and 6.5 nm. In the first 150 laser pulses, the height of the nanoparticles remained constant while the coverage was increased.     

通信电源中Boost变换器的混沌现象控制

混沌的发生是一种内在随机行为.在通信电源系统中电流控制模式开关变换器作为一种强非线性开关电路,同样也存在混沌现象.尽管开关变换器中混沌状态的存在通常不会造成破坏性的危害,但是对于可靠性要求很高的通信电源系统来说,变换器工作于混沌状态是一种不稳定的现象.在不连续运行模式条件下,基于建立了分析电流反馈型Boost变换器中的分岔行为和混沌过程的分段离散迭代映射方程,得到了以输入电流I为参数的分岔图和相图.在考虑对扰动参数的调整基础上,提出了一种基于Logistic映射调制的参数共振扰动控制方法.     

Yttrium silicide formation and its contact properties on Si(1 0 0)

Yttrium silicide formation and its contact properties on Si(1 0 0) have been studied in this paper. By evaporating a yttrium metal layer onto Si(1 0 0) wafer in conventional vacuum condition and rapid thermal annealing, we found that YSi_2-x begins to form at 350 °C, and is stable to 950 °C. Atomic force microscopy characterization shows the pinholes formation in the formed YSi_2-x film. By current-voltage measurement, the Schottky barrier height (SBH) of YSi_2-x diode on p-type Si(1 0 0) was shown to be between 0.63 and 0.69 eV for annealing temperature from 500 to 900 °C. By low temperature current-voltage measurement, the SBH of YSi_2-x diode on n-type Si(1 0 0) was directly measured and shown to be 0.46, 0.37, 0.32 eV for annealing temperature of 500, 600, and 900 °C, respectively, and possibly even lower for annealing at 700 or 800 °C.     

Growth and morphology of ultra-thin Ni films on Pd(1 0 0)

A series of Ni films with thickness from 0.2 monolayers (ML) to 12.5 ML were epitaxially grown on a Pd(1 0 0) substrate at room temperature. Growth and morphology were investigated by scanning tunneling microscopy (STM), reflection-high-energy-electron diffraction (RHEED) and Auger electron spectroscopy (AES). We found that the strain relief mechanism for the tetragonal distorted films is related with the appearance of 1 Å high-filaments.     

Epitaxial growth of Fe/MgO/Ge(0 0 1) heterostructures

We report on the growth of epitaxial Fe/MgO heterostructures on Ge(0 0 1) by Molecular Beam Epitaxy. The better crystal quality and interfacial chemical sharpness at the oxide-semiconductor interface have been obtained by growing MgO at room temperature, followed by a post-annealing at 773 K, on top of a p(2 × 1)-Ge(0 0 1) clean surface. The growth of Fe at room temperature followed by annealing at 473 K gives the best epitaxial structure with optimized crystallinity of each layer compatible with limited chemical interdiffusion. Tunneling devices based on the epitaxial Fe/MgO/Ge heterostructure have been micro-fabricated and tested in order to probe the electrical properties of the MgO barrier. The current-voltage characteristics clearly show that tunneling is the dominant phenomenon, thus indicating that this system is very promising for practical applications in electronics and spintronics.     

Photomodulated transmittance of GaBiAs layers grown on (0 0 1) and (3 1 1)B GaAs substrates

In this work, photomodulated transmittance (PT) has been applied to investigate the energy gap of GaBiAs layers grown on (0 0 1) and (3 1 1)B GaAs substrates. In PT spectra, a clear resonance has been observed below the GaAs edge. This resonance has been attributed to the energy gap-related absorption in GaBiAs. The energy and broadening of PT resonances have been determined using a standard approach in electromodulation spectroscopy. It has been found that the crystallographic orientation of GaAs substrate influences on the incorporation of Bi atoms into GaAs and quality of GaBiAs layers. The Bi-related energy gap reduction has been determined to be ∼90 meV per percent of Bi. In addition to PT spectra, common transmittance spectra have been measured and the energy gap of GaBiAs has been determined from the square of the absorption coefficient α² around the band-gap edge. It has been found that the tail of density of states is significant for GaBiAs and influences the accuracy of energy gap determination from the α² plot. In the case of PT spectra, the energy gap is determined unambiguously since this technique is directly sensitive to singularities in the density of states.     

Solid phase epitaxial growth of Dy-germanide films on Ge(0 0 1) substrates

Dy thin films are grown on Ge(0 0 1) substrates by molecular beam deposition at room temperature. Subsequently, the Dy film is annealed at different temperatures for the growth of a Dy-germanide film. Structural, morphological and electrical properties of the Dy-germanide film are investigated by in situ reflection high-energy electron diffraction, and ex situ X-ray diffraction, atomic force microscopy and resistivity measurements. Reflection high-energy electron diffraction patterns and X-ray diffraction spectra show that the room temperature growth of the Dy film is disordered and there is a transition at a temperature of 300-330 °C from a disordered to an epitaxial growth of a Dy-germanide film by solid phase epitaxy. The high quality Dy₃Ge₅ film crystalline structure is formed and identified as an orthorhombic phase with smooth surface in the annealing temperature range of 330-550 °C. But at a temperature of 600 °C, the smooth surface of the Dy₃Ge₅ film changes to a rough surface with a lot of pits due to the reactions further.     

H2S molecular beam passivation of Ge(0 0 1)

A fundamental issue regarding the introduction of high-mobility Ge channels in CMOS circuits is the electrical passivation of the interface with the high-k gate dielectric. In this paper, we investigate the passivation of p-Ge(0 0 1) using molecular H₂S. The modification of the semiconductor surface is monitored in situ by RHEED and the interface is characterized by XPS analyses. MOS capacitors are fabricated to extract interface state density, and finally we demonstrate the efficiency of the passivation scheme using a combination with an ultra thin Al interlayer.     

Study of Ni/Si(1 0 0) solid-state reaction with Y addition

The characteristics of Ni/Si(1 0 0) solid-state reaction with yttrium (Y) addition are studied in this paper. Film stacks of Ti(20 nm)/TiN(40 nm)/Ni(8 nm)/Y(4 nm)/Ni(8 nm)/Si(1 0 0) and Ti(20 nm)/TiN(40 nm)/Ni(7 nm)/Y(6 nm)/Ni(7 nm)/Si(1 0 0) were prepared by physical vapor deposition. After solid-state reaction between metal films and Si was performed by rapid thermal annealing, various material analyses show that NiSi forms even with the addition of Y, and Ni silicidation is accompanied with Y diffusion in Ni film toward its top surface. The electrical characteristic measurements reveal that no significant Schottky barrier height modulation with the addition of Y occurs.