Current transport studies of amorphous n/p junctions and its application in a‐Si:H/HIT‐type tandem cells

This paper presents an understanding of the fundamental carrier transport mechanism in hydrogenated amorphous silicon (a‐Si:H)‐based n/p junctions. These n/p junctions are, then, used as tunneling and recombination junctions (TRJ) in tandem solar cells, which were constructed by stacking the a‐Si:H‐based solar cell on the heterojunction with intrinsic thin layer (HIT) cell. First, the effect of activation energy (E_a) and Urbach parameter (E_u) of n‐type hydrogenated amorphous silicon (a‐Si:H(n)) on current transport in an a‐Si:H‐based n/p TRJ has been investigated. The photoluminescence spectra and temperature‐dependent current–voltage characteristics in dark condition indicates that the tunneling is the dominant carrier transport mechanism in our a‐Si:H‐based n/p‐type TRJ. The fabrication of a tandem cell structure consists of an a‐Si:H‐based top cell and an HIT‐type bottom cell with the a‐Si:H‐based n/p junction developed as a TRJ in between. The development of a‐Si:H‐based n/p junction as a TRJ leads to an improved a‐Si:H/HIT‐type tandem cell with a better open circuit voltage (V_oc), fill factor (FF), and efficiency. The improvements in the cell performance was attributed to the wider band‐tail states in the a‐Si:H(n) layer that helps to an enhanced tunneling and recombination process in the TRJ. The best photovoltage parameters of the tandem cell were found to be V_oc = 1430 mV, short circuit current density = 10.51 mA/cm², FF = 0.65, and efficiency = 9.75%. Copyright © 2015 John Wiley & Sons, Ltd.     

p‐CuO/n‐Si heterojunction solar cells with high open circuit voltage and photocurrent through interfacial engineering

Heterojunction solar cells of p‐type cupric oxide (CuO) and n‐type silicon (Si), p‐CuO/n‐Si, have been fabricated using conventional sputter and rapid thermal annealing techniques. Photovoltaic properties with an open‐circuit voltage (V_oc) of 380 mV, short circuit current (J_sc) of 1.2 mA/cm², and a photocurrent of 2.9 mA/cm² were observed for the solar cell annealed at 300 °C for 1 min. When the annealing duration was increased, the photocurrent increased, but the V_oc was found to reduce because of the degradation of interface quality. An improvement in the V_oc resulting to a record value of 509 mV and J_sc of 4 mA/cm² with a high photocurrent of ~12 mA/cm² was achieved through interface engineering and controlling the phase transformation of CuO film. X‐ray diffraction, X‐ray photoelectron spectroscopy, and high‐resolution transmission electron microscopy analysis have been used to investigate the interface properties and crystal quality of sputter‐deposited CuO thin film. The improvement in V_oc is mainly due to the enhancement of crystal quality of CuO thin film and interface properties between p‐CuO and n‐Si substrate. The enhancement of photocurrent is found to be due to the reduction of carrier recombination rate as revealed by transient photovoltage spectroscopy analysis. Copyright © 2014 John Wiley & Sons, Ltd.     

Impact of silicon quantum dot super lattice and quantum well structure as intermediate layer on p‐i‐n silicon solar cells

The photovoltaic effect of the silicon (Si)/silicon carbide (SiC) quantum dot super lattice (QDSL) and multi‐quantum well (QW) strucutres is presented based on numerical simulation and experimental studies. The QDSL and QW structures act as an intermediate layer in a p‐i‐n Si solar cell. The QDSL consists of a stack of four 4‐nm Si nano disks and 2‐nm SiC barrier layers embedded in a SiC matrix fabricated with a top‐down etching process. The Si nano disks were observed with bright field‐scanning transmission electron microscopy. The simulation results based on the 3D finite element method confirmed that the quantum effect on the band structure for the QDSL and QW structures was different and had different effects on solar cell operation. The effect of vertical wave‐function coupling to form a miniband in the QDSL was observed based on the solar‐cell performance, showing a dramatic photovoltaic response in generating a high photocurrent density J_sc of 29.24 mA/cm², open circuit voltage V_oc of 0.51 V, fill factor FF of 0.74, and efficiency η of 11.07% with respect to a i‐QW solar cell with J_sc of 25.27 mA/cm², V_oc of 0.49 V, FF of 0.69, and η of 8.61% and an i‐Si solar cell with J_sc of 27.63 mA/cm², V_oc of 0.55 V, FF of 0.61, and η of 10.00%. A wide range of photo‐carrier transports by the QD arrays in the QDSL solar cell is possible in the internal quantum efficiency spectra with respect to the internal quantum efficiency of the i‐QW solar cell. Copyright © 2015 John Wiley & Sons, Ltd.     

Graphene Intermediate Layer in Tandem Organic Photovoltaic Cells

One strategy to harvest wide spectral solar energy is to stack different bandgap materials together in a tandem solar cell. Here, it is demonstrated that CVD grown graphene film can be employed as intermediate layer (IML) in tandem solar cells. Using MoO₃‐modified graphene IML, a high open circuit voltage (V_oc) of 1 V and a high short‐circuit current density (J_sc) of 11.6 mA cm^‐2 could be obtained in series and parallel connection, respectively, in contrast to a V_oc of 0.58 V and J_sc of 7.6 mA cm^‐2 in single PV cell. The value of V_oc (J_sc) in the tandem cell is very close to the sum of V_oc (J_sc) attained from two single subcells in series (parallel), which confirms good ohmic contact at the photoactive layer/MoO₃‐modified graphene interface. Work function engineering of the graphene IML with metal oxide is essential to ensure good charge collection from both subcells.     

Structural analyses of seeded thin film microcrystalline silicon solar cell

This contribution investigates the effect of seeding the growth of thin film microcrystalline silicon (µc‐Si : H) deposited by radio frequency plasma‐enhanced chemical vapor deposition on the material properties of µc‐Si : H film and the device performance of p‐i‐n and n‐i‐p µc‐Si : H solar cells. By means of Raman measurement, x‐ray diffraction (XRD) and transmission electron microscopy (TEM), we investigate the structure of seeded µc‐Si : H. In particular, the effect of seed layers on the crystallinity development is investigated. Measurements of the depth profile of the crystalline mass fraction using Raman spectroscopy show that seed layers lead to a more rapid and uniform crystallinity development in growth direction. The amorphous incubation layer is suppressed and crystallization begins directly from onset of film growth without evolving through the intermediate growth phases. From TEM analyses, we observe that crystal sizes are not affected by seed layers. Horizontal cracks are however observed to dominate the early growth of µc‐Si : H in p‐i‐n solar cell and this is reduced upon seeding. For the n‐i‐p cells, these cracks are not affected by seeding. XRD results also indicate that the use of seed layers does not affect the crystal sizes but affects the direction of preferential orientation. Solar cell external parameters show that seeding of p‐i‐n solar cells leads mainly to increase in short‐circuit current density, J_sc with a slight drop in open‐circuit voltage, V_oc. For the n‐i‐p cells, a reverse effect is observed. In this case, the V_oc increases and the J_sc decreases. Copyright © 2012 John Wiley & Sons, Ltd.     

应用于下一代太阳电池的2.05 eV AlGaInP 子电池研究

研制了应用于下一代高效多结太阳电池中的定电池的 Al0.13GaInP子电池,其实验室效率为10.04%,开路电压为1457.3mV,短路电流为11.9mA。使用量子效率来验证MOVPE生长过程中涉及高Al组分引起的O缺陷对电池性能的影响。相比GaInP单结电池,Al0.13GaInP电池的短路电流下降地较为厉害,实验中生长了GaInP/Al0.13GaInP异质结电池来分析其原因,因此也提出了以牺牲部分开路电压来提升短路电流的一种有效提升电池性能的方法。     

Efficient Organic Tandem Solar Cells based on Small Molecules

In this paper, two vacuum processed single heterojunction organic solar cells with complementary absorption are described and the construction and optimization of tandem solar cells based on the combination of these heterojunctions demonstrated. The red‐absorbing heterojunction consists of C₆₀ and a fluorinated zinc phthalocyanine derivative (F4‐ZnPc) that leads to a 0.1–0.15 V higher open circuit voltage V_oc than the commonly used ZnPc. The second heterojunction incorporates C₆₀ and a dicyanovinyl‐capped sexithiophene derivative (DCV6T) that mainly absorbs in the green. The combination of both heterojunctions into one tandem solar cell leads to an absorption over the whole visible range of the sun spectrum. Thickness variations of the transparent p‐doped optical spacer between both subcells in the tandem solar cell is shown to lead to a significant change in short circuit current density j_sc due to optical interference effects, whereas V_oc and fill factor are hardly affected. The maximum efficiency η of about 5.6% is found for a spacer thickness of 150‐165 nm. Based on the optimized 165nm thick spacer, effects of intensity and angle of illumination, and temperature on a tandem device are investigated. Variations in illumination intensity lead to a linear change in j_sc over three orders of magnitude and a nearly constant η in the range of 30 to 310 mW cm^?2. Despite the stacked heterojunctions, the performance of the tandem device is robust against different illumination angles: j_sc and η closely follow a cosine behavior between 0° and 70°. Investigations of the temperature behavior of the tandem device show an increase in η of 0.016 percentage points per Kelvin between ?20 °C and 25 °C followed by a plateau up to 50 °C. Finally, further optimization of the tandem stack results in a certified η of (6.07 ± 0.24)% on (1.9893 ± 0.0060)cm² (Fraunhofer ISE), i.e., areas large enough to be of relevance for modules.     

Simulation and fabrication of heterojunction silicon solar cells from numerical computer and hot‐wire CVD

In this paper, we will present a Pc1D numerical simulation for heterojunction (HJ) silicon solar cells, and discuss their possibilities and limitations. By means of modeling and numerical computer simulation, the influence of emitter‐layer/intrinsic‐layer/crystalline‐Si heterostructures with different thickness and crystallinity on the solar cell performance is investigated and compared with hot wire chemical vapor deposition (HWCVD) experimental results. A new technique for characterization of n‐type microcrystalline silicon (n‐µc‐Si)/intrinsic amorphous silicon (i‐a‐Si)/crystalline silicon (c‐Si) heterojunction solar cells from Pc1D is developed. Results of numerical modeling as well as experimental data obtained using HWCVD on µc‐Si (n)/a‐Si (i)/c‐Si (p) heterojunction are presented. This work improves the understanding of HJ solar cells to derive arguments for design optimization. Some simulated parameters of solar cells were obtained: the best results for J_sc = 39·4 mA/cm², V_oc = 0·64 V, FF = 83%, and η = 21% have been achieved. After optimizing the deposition parameters of the n‐layer and the H₂ pretreatment of solar cell, the single‐side HJ solar cells with J_sc = 34·6 mA/cm², V_oc = 0·615 V, FF = 71%, and an efficiency of 15·2% have been achieved. The double‐side HJ solar cell with J_sc = 34·8 mA/cm², V_oc = 0·645 V, FF = 73%, and an efficiency of 16·4% has been fabricated. Copyright © 2009 John Wiley & Sons, Ltd.     

Boron‐doped hydrogenated silicon carbide alloys containing silicon nanocrystallites for highly efficient nanocrystalline silicon thin‐film solar cells

Boron‐doped hydrogenated silicon carbide alloys containing silicon nanocrystallites (p‐nc‐SiC:H) were prepared using a plasma‐enhanced chemical vapor deposition system with a mixture of CH₄, SiH₄, B₂H₆ and H₂ gases. The influence of hydrogen dilution on the material properties of the p‐nc‐SiC:H films was investigated, and their roles as window layers in hydrogenated nanocrystalline silicon (nc‐Si:H) solar cells were examined. By increasing the R_H (H₂/SiH₄) ratio from 90 to 220, the Si―C bond density in the p‐nc‐SiC:H films increased from 5.20 × 10¹⁹ to 7.07 × 10¹⁹/cm³, resulting in a significant increase of the bandgap from 2.09 to 2.23 eV in comparison with the bandgap of 1.95 eV for p‐nc‐Si:H films. For the films deposited at a high R_H ratio, the Si nanocrystallites with a size of 3–15 nm were formed in the amorphous SiC:H matrix. The Si nanocrystallites played an important role in the enhancement of vertical charge transport in the p‐nc‐SiC:H films, which was verified by conductive atomic force microscopy measurements. When the p‐nc‐SiC:H films deposited at R_H = 220 were applied in the nc‐Si:H solar cells, a high conversion efficiency of 8.26% (V_oc = 0.53 V, J_sc = 23.98 mA/cm² and FF = 0.65) was obtained compared to 6.36% (V_oc = 0.44 V, J_sc = 21.90 mA/cm² and FF = 0.66) of the solar cells with reference p‐nc‐Si:H films. Further enhancement in the cell performance was achieved using p‐nc‐SiC:H bilayers consisting of highly doped upper layers and low‐level doped bottom layers, which led to the increased conversion efficiency of 9.03%. Copyright © 2015 John Wiley & Sons, Ltd.     

Nanostructured Si/Organic Heterojunction Solar Cells with High Open‐Circuit Voltage via Improving Junction Quality

Nanostructured silicon (Si) can provide improved light harvest efficiencies in organic‐Si heterojunction solar cells due to its low light reflection ratio compared with planar one. However, the associated large surface/volume ratio of nanostructured Si suffers from serious surface recombination as well as poor adhesion with organics in organic‐Si heterojunction solar cells, which leads to an inferior open‐circuit voltage (V_oc). Here, we develop a simple and effective method to suppress charge recombination as well as enhancing adhesion force between nanostructured Si and organics by incorporating a silane chemical, namely 3‐glycidoxypropyltrimethoxydsilane (GOPS). GOPS can chemically graft onto nanostructured Si and improve the aqueous organic wetting properties, suppressing surface charge recombination velocity dramatically. In addition, this chemically grafted layer can enhance adhesion force between organics and Si. In such a way, a record V_oc of 640 mV associated with a power conversion efficiency of 14.1% is obtained for organic‐nanostructured Si heterojunction devices. These findings suggest a promising approach to low‐cost and simple fabrication for high‐performance organic‐Si solar cells.     

20.0% Efficiency Si Nano/Microstructures Based Solar Cells with Excellent Broadband Spectral Response

Spectral response of solar cells determines the output performance of the devices. In this work, a 20.0% efficient silicon (Si) nano/microstructures (N/M‐Strus) based solar cell with a standard solar wafer size of 156 × 156 mm² (pseudo‐square) has been successfully fabricated, by employing the simultaneous stack SiO₂/SiN_x passivation for the front N/M‐Strus based n⁺‐emitter and the rear surface. The key to success lies in the excellent broadband spectral responses combining the improved short‐wavelength response of the stack SiO₂/SiN_x passivated Si N/M‐Strus based n⁺‐emitter with the extraordinary long‐wavelength response of the stack SiO₂/SiN_x passivated rear reflector. Benefiting from the broadband spectral response, the highest open‐circuit voltage (V_oc) and short‐circuit current density (J_sc) reach up to 0.653 V and 39.0 mA cm^?2, respectively. This high‐performance screen‐printed Si N/M‐Strus based solar cell has shown a very promising way to the commercial mass production of the Si based high‐efficient solar cells.     

Evaluation of Zn?Sn?O buffer layers for CuIn0.5Ga0.5Se2 solar cells

Thin Zn Sn O films are evaluated as new buffer layer material for Cu(In,Ga)Se₂‐based solar cell devices. A maximum conversion efficiency of 13.8% (V_oc = 691 mV, J_sc(QE) = 27.9 mA/cm², and FF = 71.6%) is reached for a solar cell using the Zn Sn O buffer layer which is comparable to the efficiency of 13.5% (V_oc = 706 mV, J_sc(QE) = 26.3 mA/cm², and FF = 72.9%) for a cell using the standard reference CdS buffer layer. The open circuit voltage (V_oc) and the fill factor (FF) are found to increase with increasing tin content until an optimum in both parameters is reached for Sn/(Zn + Sn) values around 0.3–0.4. Copyright © 2010 John Wiley & Sons, Ltd.     

Experimental and simulation study of thin film silicon solar cells with intermediate reflector

Optical and electrical simulations were carried out for thin film silicon solar tandem cells with intermediate reflector layer (IRL) between top and bottom cell and compared with experimental external quantum efficiency and current voltage characteristics results. Reference data were collected from a series of tandem cells with different thicknesses of the top cell absorber layer (160–240 nm), the bottom cell absorber layer (1750–2100 nm), and the transparent conductive oxides based IRL (10–80 nm). It turned out that for capturing correctly the influence of the IRL on the light management as a function of the IRL thickness, the conventional semicoherent approach is not sufficient. Whereas the optical properties of a very thin IRL are governed by interference effects that are best calculated using a fully coherent model, increasingly thicker IRL show a more and more incoherent behavior. By taking into account, the interface morphology and angular light distribution within the cell stack an algorithm for the effective IRL reflectivity was proposed that explains the experimental findings very well. The consecutive electrical simulations were carried out with the device simulator ASA. The dependence of short circuit current density j_sc and fill factor FF on the thickness d_IRL of the IRL is in qualitative agreement between simulation and experiment showing coincident extrema in j_sc(d_IRL) and FF(d_IRL) at the current matching point. Copyright © 2013 John Wiley & Sons, Ltd.     

Development of high‐performance multicrystalline silicon for photovoltaic industry

The low cost and high quality of multicrystalline silicon (mc‐Si) based on directional solidification has become the main stream in photovoltaic (PV) industry. The mc‐Si quality affects directly the conversion efficiency of solar cells, and thus, it is crucial to the cost of PV electricity. With the breakthrough of crystal growth technology, the so‐called high‐performance mc‐Si has increased about 1% in solar cell efficiency from 16.6% in 2011 to 17.6% in 2012 based on the whole ingot performance. In this paper, we report our development of this high‐performance mc‐Si. The key ideas behind this technology for defect control are discussed. With the high‐performance mc‐Si, we have achieved an average efficiency of near 17.8% and an open‐circuit voltage (V_oc) of 633 mV in production. The distribution of cell efficiency was rather narrow, and low‐efficiency cells (<17%) were also very few. The power of the 60‐cell module using the high‐efficiency cells could reach 261 W as well. Copyright © 2013 John Wiley & Sons, Ltd.     

Obtaining a higher Voc in HIT cells

We have achieved a very high conversion efficiency of 21·5% in HIT cells with a size of 100·3 cm². One of the most striking features of the HIT cell is its high open‐circuit voltage V_oc, in excess of 710 mV. This is due to the excellent surface passivation at the a‐Si/c‐Si heterointerface realized by Sanyo's successful technologies for fabricating high‐quality a‐Si films and solar cells with low plasma damage processes. We have studied ways to treat the surface to produce a good interface throughout our fabrication processes. We have also investigated the deposition conditions of a‐Si layers for optimizing the barrier height for the minority carriers in the heterojunction. Our approach for obtaining HIT cells with a high V_oc is reviewed here. Copyright © 2005 John Wiley & Sons, Ltd.     

High voltage photovoltaic mini‐modules

This work describes the design, simulation, fabrication process, and characterization of high voltage photovoltaic mini‐modules using silicon on insulator (SOI) wafers. The mini‐modules are made of a number of small area photovoltaic cells (<1 mm²) monolithically connected in series. Isolation between cells is performed by means of anisotropic etching of the active layer of the SOI wafer. Measurements using standard sunlight (AM1·5 100 mW/cm²) confirm the viability of this technology to fabricate small area arrays showing open circuit voltages, V _oc, between 620 mV and 660 mV and photocurrent densities up to 22·3 mA/cm² for single cells of 0·225 mm² area and 10 µm active film thickness. Series connection scales up V _oc and the maximum power, P _m, from 625 mV and 21·2 µW, respectively, in a single cell to 103 V and 3·2 mW when 169 cells are connected in series in a 0·42 cm² module total area. Copyright © 2008 John Wiley & Sons, Ltd.     

Optimization of Si NC/P3HT Hybrid Solar Cells

Silicon nanocrystals (Si NCs) are shown to be an electron acceptor in hybrid solar cells combining Si NCs with poly(3‐hexylthiophene) (P3HT). The effects of annealing and different metal electrodes on Si NC/P3HT hybrid solar cells are studied in this paper. After annealing at 150 °C, Si NC/P3HT solar cells exhibit power conversion efficiencies as high as 1.47%. The hole mobility in the P3HT phase extracted from space‐charge‐limited current measurements of hole‐only devices increases from 2.48 × 10^?10 to 1.11 × 10^?9 m² V^?1 s^?1 after annealing, resulting in better transport in the solar cells. A quenching of the open‐circuit voltage and short‐circuit current is observed when high work function metals are deposited as the cathode on Si NC/P3HT hybrid devices.     

High potential of thin (<1 µm) a‐Si: H/µc‐Si:H tandem solar cells

Silicon based thin tandem solar cells were fabricated by plasma enhanced chemical vapor deposition (PECVD) in a 30 × 30 cm² reactor. The layer thicknesses of the amorphous top cells and the microcrystalline bottom cells were significantly reduced compared to standard tandem cells that are optimized for high efficiency (typically with a total absorber layer thickness from 1.5 to 3 µm). The individual absorber layer thicknesses of the top and bottom cells were chosen so that the generated current densities are similar to each other. With such thin cells, having a total absorber layer thickness varying from 0.5 to 1.5 µm, initial efficiencies of 8.6–10.7% were achieved. The effects of thickness variations of both absorber layers on the device properties have been separately investigated. With the help of quantum efficiency (QE) measurements, we could demonstrate that by reducing the bottom cell thickness the top cell current density increased which is addressed to back‐reflected light. Due to a very thin a‐Si:H top cell, the thin tandem cells show a much lower degradation rate under continuous illumination at open circuit conditions compared to standard tandem and a‐Si:H single junction cells. We demonstrate that thin tandem cells of around 550 nm show better stabilized efficiencies than a‐Si:H and µc‐Si:H single junction cells of comparable thickness. The results show the high potential of thin a‐Si/µc‐Si tandem cells for cost‐effective photovoltaics. Copyright © 2010 John Wiley & Sons, Ltd.     

Evaluation of a betavoltaic energy converter supporting scalable modular structure

Distinct from conventional energy‐harvesting (EH) technologies, such as the use of photovoltaic, piezoelectric, and thermoelectric effects, betavoltaic energy conversion can consistently generate uniform electric power, independent of environmental variations, and provide a constant output of high DC voltage, even under conditions of ultra‐low‐power EH. It can also dramatically reduce the energy loss incurred in the processes of voltage boosting and regulation. This study realized betavoltaic cells comprised of p‐i‐n junctions based on silicon carbide, fabricated through a customized semiconductor recipe, and a Ni foil plated with a Ni‐63 radioisotope. The betavoltaic energy converter (BEC) includes an array of 16 parallel‐connected betavoltaic cells. Experimental results demonstrate that the series and parallel connections of two BECs result in an open‐circuit voltage V_oc of 3.06 V with a short‐circuit current I_sc of 48.5 nA, and a V_oc of 1.50 V with an I_sc of 92.6 nA, respectively. The capacitor charging efficiency in terms of the current generated from the two series‐connected BECs was measured to be approximately 90.7%.     

Series resistance characterization of industrial silicon solar cells with screen‐printed contacts using hotmelt paste

This work presents the results of a detailed series resistance characterization of silicon solar cells with screen‐printed front contacts using hotmelt silver paste. Applying the hotmelt technology energy conversion efficiencies up to 18·0% on monocrystalline wafers with a size of 12·5 cm × 12·5 cm have been achieved, an increase of 0·3% absolute compared to cells with conventional screen‐printed contacts. This is mainly due to the reduction in the finger resistance to values as low as 14 Ω/m, which reduces the series resistance of the solar cell significantly. To retrieve the lumped series resistance as accurately as possible under the operating condition, different determination methods have been analyzed. Methods under consideration were fitting of the two‐diode equation function to a dark IV‐curve, integration of the area A under an IV‐curve, comparison of a j_sc–V_oc with a one‐sun IV‐curve, comparison of the j_sc and V_oc points of a shaded curve with the one‐sun IV‐curve as well as comparison of a dark IV‐curve with a one‐sun IV‐curve, and comparison of IV‐curves measured at different light intensities. The performed investigations have shown that the latter four methods all resulted in reliable series resistance values. Copyright © 2007 John Wiley & Sons, Ltd.