Nd∶YAG激光治疗牙本质过敏症的临床研究

评价:Nd∶YAG激光治疗牙本质过敏症的临床疗效.选取牙本质过敏患者48例(67颗患牙),采用Nd∶YAG激光照射治疗,并用数字化疼痛评分法(VAS)评测治疗前及治疗后即刻、1个月、3个月的牙本质敏感程度.冷刺激VAS评分在治疗前、治疗后即刻、4周和3个月时分别为7.2±2.1,2.5±1.8,3.2±2.4,3.7±2.0,治疗前与治疗后各时间点比较差异,均有统计学意义(P＜0.05).YAG激光治疗牙本质敏感症具有良好的临床疗效.     

双线排龈法与Nd∶YAG激光排龈法的临床效果比较

探讨双线排龈法和Nd∶YAG激光排龈法的排龈效果、患者疼痛反应程度和对牙周健康的影响。将96颗患牙随机分组,即双线排龈组和Nd∶YAG激光排龈组。对石膏模型、印模及患者疼痛度进行调查,通过牙周健康指数对修复后1周、1个月、3个月的基牙牙周健康状况进行评价。两组石膏模型及印模均达到满意效果。Nd∶YAG激光排龈组的无痛率明显高于双线排龈组(P0.05)。两组治疗后1周及1个月的探诊深度(PD)值均较治疗前降低,但Nd∶YAG激光组PD值高于双线排龈组(P0.05)。3个月后两组PD值均恢复至治疗前水平(P0.05)。Nd∶YAG激光组操作时间明显短于双线排龈组。两种排龈方法均可以达到理想的排龈效果。但Nd∶YAG激光具有操作简便,耗时少且无痛等优点。     

Nd:YAG激光在慢性咽炎治疗中的作用

目的:探讨Nd:YAG激光对慢性咽炎的治疗疗效。方法:对我院2004年-2005年12月间Nd:YAG激光治疗的慢性咽炎250例进行分析,并对激光与药物、手术等治疗方法分析。结果:慢性咽炎(增生型、且用药物治疗无效)激光治疗可以达到95%的治愈率,Nd:YAG激光治疗慢性咽炎的优点是:手术简便、病人痛苦小、疗效高、费用低、术后反应轻、并发症少等独特优点。     

脉冲Nd:YAG激光蚀刻牙齿硬组织的临床研究

目的:观察脉冲Nd:YAG激光蚀刻牙硬组织后增加与复合树脂结合力的临床效果方法:观察组采用脉冲Nd:YAG激光照射窝洞后进行光固化治疗,对照组以常规酸处理后光固化治疗。结果:观察组115个牙齿成功105,有效6个,失败4个;对照组成功76,有效21,失败18个。两组间有非常显著性差异(P<0.01)。结论:脉冲Nd:YAG激光代替酸处理蚀剂牙硬组织进行光固化治疗上一种可行的方法。     

Nd：YAG激光治疗侵袭性牙周炎的短期临床疗效观察

目的：研究传统龈下刮治及根面平整的基础上联合应用Nd ：YAG激光治疗侵袭性牙周炎的短期临床疗效及镇痛效果。方法通过选择34例侵袭性牙周炎患者,以龈上洁治后1周为基线,采用自身对照,随机选择左右侧作为A组（对照组）单纯龈下刮治及根面平整组和B组（实验组）龈下刮治及根面平整＋Nd ：YAG激光治疗组。术后即刻应用视觉模拟评分法（visual analogue scale ,VAS）让患者对治疗产生的疼痛度进行评分;基线和治疗后1月、3月由另一名单盲牙周医师进行牙周指数的测量,包括：牙周探诊深度（probing depth ,PD）、临床附着丧失（clinical attachment loss ,CAL）、出血指数（bleeding index ,BI）和牙齿松动度。结果：激光治疗组的VAS值（1．66±0．74）明显低于对照组（4．81±0．59）,p＜0．01;激光治疗组和对照组患牙PD、CAL及BI指数及牙齿松动度于治疗后1月、3月相对于基线均有明显降低,激光组的PD和CAL指数在治疗后3月相对于治疗后1月有持续降低,明显低于对照组,p＜0．05。结论 Nd ：YAG激光与常规龈下刮治及根面平整术相结合能有效提高侵袭性牙周炎的短期临床疗效,同时改善治疗的舒适性。     

草莓状血管瘤激光治疗的疗效观察

目的:观察应用Nd:YAG激光治疗草莓状血管瘤的疗效。方法:对342例草莓状血管瘤采用Nd:YAG激光对血管瘤病变组织照射或插入治疗,平均治疗2至3次。结果:Nd:YAG激光治疗342例草莓状血管瘤总有效率达到95%以上,对控制血管瘤的发展效果满意。结论:Nd:YAG激光治疗草莓状血管瘤疗效满意,操作方便,安全可靠。     

Nd:YAG激光在临床治疗慢性扁桃体炎中的应用

目的:探讨Nd:YAG激光对慢性扁桃体炎的治疗疗效.方法:自2010年至2011年间用Nd:YAG激光治疗的慢性扁桃体炎23例,并对激光治疗与药物、手术的治疗方法进行分析比较.结果:慢性扁桃体炎激光治疗可以达到95％的治愈率.结论:Nd:YAG激光治疗慢性扁桃体炎是除手术治疗之外的另一种有效治疗方法,降低了手术率,该方法操作简单、痛苦小、疗效高、费用低、术后反应轻、并发症少.     

Nd:YAG激光对咽部疾病治疗的独特疗效

目的 :探讨Nd :YAG激光对咽部疾病的治疗疗效。方法 :对我院 2 0 0 0年 1月 -2 0 0 3年 3月间Nd :YAG激光治疗的咽部病变 85 3例进行回顾性分析 ,并对激光与药物、手术等治疗方法分析。结果 :咽炎 (增生型 )激光治疗可以达到 95 %的治愈率 ,对扁桃体炎或上感所致的发热可以通过激光扁桃体照射、漂白达到一次性热退 ,对于扁桃体术后所致的特殊原因出血 ,用药物及手术无法解决的 ,可以用激光治疗 ,特别是对扁桃体肿大所致鼾症及扁桃体炎并发症 ,更具有使病人痛苦小、经济、疗效快、治愈率高的独特优点     

KTP倍频Nd∶YAG激光和Ho∶YAG激光心肌打孔的组织学变化的对比研究

目前临床用于心肌血运重建术的激光主要有CO2和Ho∶YAG激光,它们也有各自的优缺点,寻找新的能有效形成激光孔道且对周围组织损伤小的激光源是目前研究的一个方向,为此,我们比较国产KTP倍频Nd∶YAG激光和Ho∶YAG激光对离体猪心激光打孔的组织学效应,探讨KTP倍频Nd∶YAG激光用于激光心肌血运重建术的可能性.方法: 分别用 KTP倍频Nd∶YAG激光和Ho∶YAG激光以多种级别的工作参数对离体猪心左心室心内膜面进行照射,进行病理组织学检查,测量激光孔道直径、深度及坏死层厚度,比较两种激光心肌打孔的组织学变化.结果: KTP倍频Nd∶YAG激光和 Ho∶YAG激光均能有效形成激光孔道,随能量增加,孔道深度增加.KTP倍频Nd∶YAG激光具有孔道直、热损伤小的优点.结论:KTP倍频Nd∶YAG激光是激光心肌血运重建术可供选择的激光源.(OF2)     

鼻内镜下Nd：YAG激光在预防鼻息肉术后复发中的应用

目的：探讨鼻内镜下Nd：YAG激光在复发性多发性鼻息肉术后处理及防止息肉复发的优越性，方法：168例鼻息肉术后患者被随机分成两组，分别经鼻内镜下Nd：YAG激光和传统方法处理术腔。结果：随访1年至3年，对首发的鼻息肉经激光治疗的无息肉复发，对于复发性多发性鼻息肉患者术后半年内仅有9％的复发率，传统的术后处理方法治疗术后半年仍有30％的复发率。结论：鼻内镜下Nd：YAG激光可有效的预防鼻息肉术后复发，尤其对于复发性多发性鼻息肉更有其独特的优点。     

根尖狭窄破坏情况下两种根尖定位仪定位准确性的体外研究

目的：比较Propex、Raypex5根尖定位仪在根尖狭窄破坏情况下定位根尖孔位置的准确性。方法：选取20颗新鲜拔除的单根管恒牙,采用锥形金刚砂针截去根尖,顺根管方向逆向自根尖破坏根尖狭窄,并放入实验模型中,使用Propex、Raypex5根尖定位仪定位根尖孔位置,比较两种根尖定位仪在不同根尖孔直径情况下测量结果与准确...     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm