数据场和K-Means算法融合的雷达信号分选

雷达辐射源信号分选是电子情报侦察的关键环节,其中未知雷达的信号分选一直是分选中的难题。针对传统K-Means聚类算法对初始聚类中心敏感、需要事先确定初始聚类数目的缺点,将数据场算法引入到雷达信号分选,并将其与K-Means聚类算法相结合,提出了一种融合算法,该算法不需要雷达信号的先验知识,适用于处理未知雷达信号。通过仿真实验验证所提出的融合算法分选准确率较高,为雷达信号分选提供了新的思路。     

基于K-Means算法的雷达信号预分选方法

K-Means算法在雷达信号预分选中有着广泛的应用,传统K-Means算法对聚类个数以及聚类中心的初始设定依赖性很大,并且对噪声和孤立点很敏感,针对这些不足,文中提出了一种将距离法与改进的K-Means算法相结合的雷达信号预分选方法。仿真实验表明提出的方法可以有效的降低了噪声和孤立点对K-Means聚类算法的影响。     

改进SVC算法在雷达信号分选中的应用

为提高支持向量聚类（SVC）对分布复杂、不均匀雷达辐射源信号样本分选的正确率,提出一种改进的支持向量聚类分选方法,先采用支持向量聚类对所有未知样本作预分类,提供初始的聚类中心,然后利用K-Means聚类分选算法最终分选。结果表明,此方法能够很好地对复杂雷达信号进行分选,分选正确率较高。     

基于微正则退火算法对K-means聚类算法的优化

K-means算法是经典的基于划分的聚类算法,但该算法存在依赖于初始聚类中心、容易陷入局部最优解等缺点,针对这些缺点,本文提出了基于微正则退火K-means聚类算法,通过继承微正则退火算法的高效全局寻优特性,可以避免陷入局部最优解。实验结果表明,改进的算法能够有效的减少原算法对初始聚类中心点的依赖,提高算法的稳定性,摆脱原算法容易陷入局部最优解的缺点。     

基因表达式编程和K-Means融合的雷达信号分选

为了解决聚类算法需要较多的先验知识,不能自动进行聚类的问题,提出了基因表达式编程和K-Means融合的雷达信号分选算法。从介绍基因表达式编程和K-Means聚类算法的特点出发,针对雷达信号的实际情况,对两种算法进行了优化融合,并通过模拟雷达辐射源数据进行了仿真验证,仿真结果表明该算法在不需要任何雷达辐射源先验知识的情况下即可自动完成聚类分选,具有98.3%的聚类分选精度和较快的收敛速度,其较高的分选精度在电子情报侦察系统上有着广阔的应用前景。     

基于Bisecting K-Means聚类的公路交通流状态划分方法

<正>为了缓解交通拥堵，提高出行效率，交通部门需要对交通流状态进行分类识别以确定交通状态。基于K-Means聚类算法进行公路运行状态划分易受到初始聚类中心点选择的影响，因此本文在K-Means算法的基础上进行改进，将BisectingK-Means应用于公路运行状态的划分，各交通状态中心点的距离较远，避免了初始聚类中心会聚到一个交通状态，一定程度上克服了K-Means算法陷入局部最优值。     

基于模拟退火的K-means算法研究

针对K—means算法依赖于初始聚类中心、经常陷入局部最优解等缺点，利用模拟退火算法的全局优化特点，提出一种基于模拟退火的K—means算法。仿真结果表明该算法减弱了对初始聚类中心的依赖性，提高了原有算法的稳定性。该算法能够获得全局最优解，收敛于局部极小值点的可能性大大减少。     

改进的人工鱼群聚类雷达信号分选算法

针对目前复杂多变的雷达电磁信号环境,将人工鱼群聚类算法引入到雷达信号分选中,并将其与传统的K-Means聚类算法相结合进行了改进,对雷达信号分选进行了一种新的探索,该算法不需要雷达信号的先验知识,适用于处理未知雷达信号。通过仿真实验证明该算法分选准确率较高。     

雷达辐射源信号聚类分选算法综述

现代战场环境下雷达信号密集、交叠严重,传统的雷达信号分选算法已不能有效完成未知雷达信号分选工作,而聚类分选因具有无监督学习、对先验知识要求小等优点被学者广泛应用于未知雷达信号聚类分选的研究工作。作者先总结了国内学者在传统聚类算法及其优化算法对未知雷达辐射源信号进行分类分选的部分理论研究成果,分析了各个算法存在的利弊,再根据雷达信号的特征参数以及影响聚类分选的外界因素提出了选择最优聚类算法的参考标准和建议。     

基于加权SVC和K-Mediods联合聚类的雷达信号分选方法

为了提高复杂体制雷达信号分选的正确率,提出了加权SVC和K-Mediods联合聚类算法,针对雷达参数特点,对SVC算法的核函数内积和K-Mediods算法的欧氏距离进行加权计算,从而避免聚类结果被弱相关的特征所支配.与SVC与K-Means联合聚类算法相比,SVC与K-Mediods联合聚类算法有效降低了"离群点"的影响.结果表明,该算法能够提高复杂体制雷达信号分选的正确率,存在部分"离群点"时分选正确率较高.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

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正Communications—VLSI Researches and industries of telecommunications have been growing rapidly in the last 20 years and will keep their high growing pace in the next decade.The involved researches and developments cover mobile communications,highway and last-mile broadband communication,domain specific communications,and emerging D2D M2M communications.Radio communication steps into its