准连续调谐35nm的SGDBR激光器的研制

对接生长技术可以独立优化不同区域的波导结构,有利于制作高性能的半导体光电子集成器件.文中采用MOCVD对接生长技术制作了SGDBR激光器,通过载流子注入,器件准连续调谐范围为35nm,在调谐范围内边模抑制比大于30dB.     

具有90nm调谐范围的1.3μm Si基MOEMS可调谐光滤波器

利用表面微机械技术,成功制作了1.3μm Si基MOEMS可调谐光滤波器.原型器件在50V的调谐电压下,调谐范围为90nm.该技术可以用于制作1.3μm Si基可调谐光探测器.     

具有90nm调谐范围的1.3μm Si基MOEMS可调谐光滤波器

利用表面微机械技术,成功制作了1.3μm Si基MOEMS可调谐光滤波器.原型器件在5 0 V的调谐电压下,调谐范围为90 nm.该技术可以用于制作1.3μm Si基可调谐光探测器.     

BIG结构的可调谐分布布拉格反射激光器

提出并制作出一种可调谐BIG-RW结构的激光器,该激光器包括两个不同耦合系数的Bragg光栅.激光器的阈值电流为38mA,输出功率大于8mW,可调谐范围是3.2nm,边模抑制比(SMSR)大于30dB,在整个调谐范围内,功率变化小于0.3dB.     

BIG结构的可调谐分布布拉格反射激光器

提出并制作出一种可调谐 BIG- RW结构的激光器 ,该激光器包括两个不同耦合系数的 Bragg光栅 .激光器的阈值电流为 38m A,输出功率大于 8m W,可调谐范围是 3.2 nm ,边模抑制比 (SMSR)大于 30 d B,在整个调谐范围内 ,功率变化小于 0 .3d B.     

锥形光纤在光纤传感和光纤激光器上的应用

介绍了近年来得到广泛研究的锥形光纤技术的发展现状,尤其是在光纤传感和光纤激光器上的应用.在光纤上直接拉制出的锥区可用于制作小型化、一体化、具有许多优良光学特性的光纤器件.锥形光纤按束腰直径和光纤拉锥区的长度比,可分为锐锥度光纤(锥区长度和锥区的束腰直径较接近)和缓锥度光纤(锥区的长度远远大于束腰的直径).锐锥度光纤可以制作Michelson或者Mach-Zehnder干涉仪可用来实现折射率传感器;同时它还可改变激光光斑的强度分布,获得平顶光斑输出.利用单模缓锥度光纤可以实现窄线宽可调谐滤波器;另外基于缓锥度光纤可以实现多模光纤至单模光纤的转换器.锥形光纤结构紧凑,制作简单、成本低,必将成为多种实用光纤器件的核心.     

粗芯光纤光栅的光谱特性研究

光纤光栅具有插入损耗小,波长选择性好,易于调谐,使用灵活等优点,成为光纤激光器首选谐振器件.为了适应高功率光纤激光器的发展需求,在粗芯光纤上直接刻制光纤光栅用作谐振器件成了新的研究方向.首先对粗芯光纤光栅中的模式耦合进行理论分析,然后在粗芯光纤上制作了光纤光栅.通过试验发现,改变粗芯光纤的模式激发方式可获得不同的光栅光谱.     

全固体可调谐激光器

全固体可调谐激光器在７０年代和８０年代的大部分时间中，宽可调谐激光器只意味一种器件，即染料激光器。如名称所示，这种激光器以有机染料作激活介质。染料能在４００～１０００ｎｍ波段产生输出，每种染料的调谐范围为５０～１００ｎｍ。但凡用过染料激光器的任何人都...     

微机械可调谐滤波器的研制

利用GaAs/AlGaAs分布反馈Bragg反射镜在GaAs衬底上制作了一个微机械的调谐滤波器.该器件在7V调谐电压下调谐范围达28nm.     

宽带可调谐取样光栅DBR激光器

利用离子注入量子阱混杂技术,成功研制了三段取样光栅(SG)-DBR激光器.器件不连续调谐范围超过30nm,边模抑制比大于30dB.     

Fabrication of Butt‐Coupled SGDBR Laser Integrated with Semiconductor Optical Amplifier Having a Lateral Tapered Waveguide

We have demonstrated a high‐power widely tunable sampled grating distributed Bragg reflector (SGDBR) laser integrated monolithically with a semiconductor optical amplifier (SOA) having a lateral tapered waveguide, which is the first to emit a fiber‐coupled output power of more than 10 dBm using a planar buried heterostructure (PBH). The output facet reflectivity of the integrated SOA using a lateral tapered waveguide and two‐layer AR coating of TiO₂ and SiO₂ was lower than 3 × 10^?4 over a wide bandwidth of 85 nm. The spectra of 40 channels spaced by 50 GHz within the tuning range of 33 nm were obtained by a precise control of SG and phase control currents. A side‐mode suppression ratio of more than 35 dB was obtained in the whole tuning range. Fiber‐coupled output power of more than 11 dBm and an output power variation of less than 1 dB were obtained for the whole tuning range.     

Design of sampled grating DBR lasers with integrated semiconductoroptical amplifiers

High output powers and wide range quasicontinuous tuning have been achieved in a sampled-grating distributed Bragg reflector laser with an integrated semiconductor-optical-amplifier. Using an amplifier with a curved passive output waveguide to suppress back reflection, we have achieved a quasicontinuous tuning range of over 50 nm and peak output powers greater than +8 dBm. Optimizing the device structure and the sampled-grating mirror design has enabled tuning ranges of up to 72 nm in devices without amplifiers     

多通道干涉大范围可调谐激光器

多通道干涉(MCI)激光器是一种新型单片集成的大范围可调谐半导体激光器。它采用多臂干涉增强而无需光栅的选模方式,具有制作简单和容差大的优势;采用偏置量子阱技术进行有源无源集成,降低了二次外延的难度。为满足光通信不同场景的应用需求,分别设计研制了大范围可调的电调谐和热调谐MCI激光器。基于电调谐的MCI激光器实现了48.8 nm的波长调谐范围,洛伦兹线宽小于350 kHz。基于热调谐的MCI激光器在双工作温度下的波长调谐范围大于60 nm,总热调谐功率小于35 mW,整个调谐范围内洛伦兹线宽小于100 kHz。同时,研究推进了其稳定控制及集成化工作,实现了基于热调谐MCI激光器的nano-ITLA。     

Proposal of electrically tunable external-cavity laser diode

We propose and demonstrate a novel tunable external-cavity laser diode that simultaneously achieves rapid tuning rate and wide tuning range by electrical control. This contains new-type integrated laser diode, collimating lens, and diffraction grating mirror. The integrated laser diode consists of Fabry-Pe/spl acute/rot laser diode and waveguide-type deflector, which can deflect the beam passing through the waveguide. By control of the current in the deflector region, maximum wavelength variation of 8.6 nm and sidemode suppression ratio of >35 dB were obtained.     

Wavelength-tunable narrow-linewidth semiconductor fiber-ring laser

A passive sub-ring was inserted into a semiconductor fiber-ring laser as the Vernier configuration to enable stable lasing spectrum. Wavelength tuning over 20 nm and fine tuning of less than 0.0001 nm were obtained by rotating the polarization controller and adjusting the voltage on the phase modulator, respectively. A narrow linewidth of less than 10 kHz and a sidemode suppression ratio of higher than 35 dB were demonstrated with single longitudinal-mode operation     

Single and tunable dual-wavelength operation of an InGaAs-GaAsridge waveguide distributed Bragg reflector laser

The design and operation of an InGaAs-GaAs asymmetric cladding ridge waveguide (RW) distributed Bragg reflector (DBR) laser that can be operated in both a single-wavelength mode and a stable, dual-wavelength mode with tunable mode pair separation are reported. The asymmetric cladding RW-DBR laser consists of a conventional DBR laser with an additional, separate tuning contact pad over a part of the grating. The laser operates on a single-wavelength with no current applied to the tuning DBR pad, and dual-wavelength operation is achieved when current is applied to the tuning DBR pad. Tunable mode pair separations as small as ~13 nm and as large as ~17 nm can be achieved in various tuning conditions     

A fully integratable 1.55-/spl mu/m wavelength continuously tunable asymmetric twin-waveguide distributed Bragg reflector laser

We demonstrate a single-frequency continuously tunable three-section distributed Bragg reflector laser operating at a center wavelength of /spl lambda//sub 0/=1.548 /spl mu/m using a fully integratable asymmetric twin-waveguide structure. A low-loss tapered mode transformer couples the light between the active waveguide, or gain region, and the passive ridge waveguide where the phase and grating tuning sections are located. The device has a threshold current of 50 mA and output power of nearly 13 mW, with a slope efficiency of 0.12 W/A and a tuning range of 4.8 nm under pulsed operation. An independent phase section is used to continuously tune the wavelength, thus avoiding mode hops. Using a delayed self-heterodyne technique, we determine the linewidth to be (146/spl plusmn/2) kHz.     

Single-mode distributed-feedback 761-nm GaAs-AlGaAs quantum-welllaser

We have developed single-mode distributed-feedback 761-nm GaAs-AlGaAs quantum well lasers as sources for O₂ sensing through laser absorption spectroscopy. Devices containing a 4-μm-wide ridge waveguide exhibit low threshold currents of 25 mA and quantum efficiencies greater than 35% at output powers in excess of 25 mW. The spectral linewidths of these devices are 12.0 MHz at 15 mW. Temperature- and current-tuning rates are 0.06 nm/°C and 0.0075 nm/mA (-3.9 GHz/mA), respectively. The devices display smooth, continuous, single-mode wavelength tuning over a 4.2 nm interval     

光纤光栅调谐全光纤激光器

本文提出了一种利用光纤光栅作为调谐装置的可调谐全光纤激光器。实验结果表明：该调谐装置操作简便,性能稳定。激光器输出波长连续可调,输出波长复现性误差小于０．００８ｎｍ,输出功率大于１ｍＷ,激光谱线宽小于０．０１ｎｍ,波长调谐范围大于６．４ｎｍ。