Influences of Injection Barrier and Mobility on Recombination Rate and Zone in OLEDs

The luminous efficiency of organic light-emitting devices depends on the recombination probability of electrons injected at the cathode and holes at the anode. A theoretical model to calculate the distribution of current densities and the recombination rate in organic single layer devices is presented taking into account the charge injection process at each electrode, charge transport and recombination in organic layer. The calculated results indicate that efficient single-layer devices are possible by adjusting the barrier heights at two electrodes and the carrier mobilities. Lowering the barrier heights can improve the electroluminescent（EL） efficiency pronouncedly in many cases, and efficient devices are still possible using an ohmic contact to inject the low mobility carrier, and a contact limited contact to inject the high mobility carrier. All in all, high EL efficiency needs to consider sufficient recombination, enough injected carriers and well transport.     

Blue and green organic light-emitting devices with various film thicknesses for color tuning

Blue and green organic light-emitting devices with a structure of indium tin oxide (ITO) /N,N’-bis-(1-naphthyl)-N,N’- diphenyl-1,1’-biphenyl-4,4’-diamine (NPB)/aluminum(III) bis(2-methyl-8-quinolinato)4 –phenylphenolato (BAlq) /tris(8- hydroxyquinolate)-aluminum (Alq3)/Mg:Ag have been fabricated. Blue to green light emission has been achieved with the change of organic film thickness. Based on energy band diagram and charge carrier tunneling theory, it is concluded that the films of different thicknesses play a role as a color-tuning layer and the color-variable electroluminescence (EL) is ascribed to the modulation function within the charge carrier recombination zone. In the case of heterostructure devices with high performance, the observed EL spectra varies significantly with the thickness of organic films, which is resulted from the shift of recombination region site. It has not been hitherto indicated that the devices compose of identical components could be implemented to realize different color emission by changing the film thickness of functional layers.     

Investigation on the passivation,band alignment,gate charge,and mobility degradation of the Ge MOSFET with a GeO/Al;O;gate stack by ozone oxidation

Ge has been an alternative channel material for the performance enhancement of complementary metal-oxide-semiconductor(CMOS)technology applications because of its high carrier mobility and superior compatibility with Si CMOS technology.The gate structure plays a key role on the electrical property.In this paper,the property of Ge MOSFET with Al₂O₃/GeO_x/Ge stack by ozone oxidation is reviewed.The GeO_xpassivation mechanism by ozone oxidation and band align-ment of Al2O3/GeO_x/Ge stack is described.In addition,the charge distribution in the gate stack and remote Coulomb scatter-ing on carrier mobility is also presented.The surface passivation is mainly attributed to the high oxidation state of Ge.The en-ergy band alignment is well explained by the gap state theory.The charge distribution is quantitatively characterized and it is found that the gate charges make a great degradation on carrier mobility.These investigations help to provide an impressive un-derstanding and a possible instructive method to improve the performance of Ge devices.     

Luminescent Efficiency in Single-layer Organic Electrophosphorescent Devices

Based on the charge injection and recombination processes and the triplet-triplet annihilation process, a model to calculate the electro.luminescent（EL） efficiency is presented. The influences of the applied electric field on the injection efficiency, recombination efficiency and electroluminescent efficiency are discussed. It is found that： （1） The injection efficiency is increasing while the recombination efficiency is decreasing with the applied electric field increasing. （2） The EL efficiency is enhanced at low electric field slowly but is decreasing at high electric field with the increase of applied voltage. （3） The EL efficiency is decreasing with the increase of the host-guest molecular distance （R）. So, it is concluded that the EL efficiency in single-layer organic electrophosphorescent devices is dominated by injection efficiency at lower electric field and recombination efficiency at higher electric field.     

Luminescence of Co-doped SrTiO3 ： Pr^3＋

The SrTiO3 ： Pr^3＋ material, co-doped with monovalent Li^＋ , divalent Mg^2＋ , and trivalent Al^3＋ was prepared by a new sol-gel method. The phase and crystallinity of the synthesized materials were investigated by powder X-ray diffraction（XRD） and scanning electron microcopy（SEM）. Among the co-doped ion, Al^3＋ incorporation caused the least lattice change and had the best crystallinity. Photoluminescence spectra were taken to investigate the luminescence characteristics. We observed a red luminescence change of SrTiO3 ： Pr^3＋ after being co-doped, and a best enhancement on the red luminescence with the trivalent Al^3＋ was observed. The present results indicated that the charge defect associated with Al^3＋ has led to charge compensation of Pr^＋ and also implied that the charge defects（usually the second dopant ions replacing the A or B sites in the lattice） which are closer to PrSr^＋ contribute more to the red luminescence enhancement.     

Space Charges Effect of Static Induction Transistor

The space charge effect (SCE) of static induction transistor (SIT) that occurs in high current region is systematically studied.The I-V equations are deduced and well agree with experimental results.Two kinds of barriers are presented in SIT,corresponding to channel voltage barrier control (CVBC) mechanism and space charge limited control (SCLC) mechanism respectively.With the increase of drain voltage,the gradual transferring of operational mechanism from CVBC to SCLC is demonstrated.It points out that CVBC mechanism and its contest relationship with space charge barrier makes the SIT distinctly differentiated from JFET and triode devices,etc.The contest relationship of the two potential barriers also results in three different working regions,which are distinctly marked and analyzed.Furthermore,the extreme importance of grid voltage on SCE is illustrated.     

Optical properties of Ta2O5 single layer and ultraviolet reflective film under ultraviolet irradiation

Tantalum pentoxide (Ta2O5) and ultraviolet reflective (UVR) multilayer films were deposited on quartz glass substrates by an electron beam evaporation system equipped with a hall ion source, respectively. The optical properties of Ta2O5 film and the UVR film under the vacuum ultraviolet irradiation were investigated. It is found that the mean transmittance of the Ta2O5 thin film decreased in the 300—500 nm region. The refractive index and extinction coefficient of the single layer increased during the range of 300—1 000 nm, with the variation rate of refractive index less than 1%, which is mainly due to the larger surface roughness and variation of the chemical state of Ta atoms on the surface caused by the irradiation. The mean reflectance of UVR film decreased from 96.5% to 95.4% during the range of 290—450 nm, indicating that the Ta2O5 and UVR films have excellent vacuum ultraviolet irradiation resistant properties.     

Investigation of charge loss characteristics of HfO2 annealed in N2 or 02 ambient

The retention characteristics of electrons and holes in hafnium oxide with post-deposition annealing in a N2 or 02 ambient were investigated by Kelvin probe force microscopy. The KFM results show that compared with the N2 PDA process, the O2 PDA process can lead to a significant retention improvement. Vertical charge leakage and lateral charge spreading both played an important role in the charge loss mechanisms. The retention improvement is attributed to the deeper trap energy. For electrons, the trap energy of the HOS structure annealed in a N2 or 02 ambient were determined to be about 0.44 and 0.49 eV, respectively. For holes, these are about 0.34 and 0.36 eV, respectively. Finally, the electrical characteristics of the memory devices are demonstrated from the experiment, which agreed with our characterization results. The qualitative and quantitative determination of the charge retention properties, the possible charge decay mechanism and trap energy reported in this work can be very useful for the characterization of hafnium charge storage devices.     

Test method of frequency response based on diamond surface acoustic wave devices

In order to reduce the noises affixed to the signals when testing high frequency devices,a single-port test mode(S11) is used to test frequency response of high frequency(GHz) and dual-port surface acoustic wave devices(SAWDs) in this paper.The feasibility of the test is proved by simulating the Fabry-perot model.The frequency response of the high-frequency dual-port resonant-type diamond SAWD is measured by S11 and the dual-port test mode(S21),respectively.The results show that the quality factor of the device is 51.29 and the 3 dB bandwidth is 27.8 MHz by S11-mode measurement,which is better than the S21 mode,and is consistent with the frequency response curve by simulation.     

Effect of the Microstructure and the Dopant Valence States on EL of ZnS Thin Film Devices

A systematic study of the effect of microstructure on the EL properties of ZnS:Er thin film devices fabricated by thermal evaporation was carried out using XRD, XPS and EL techniques. The experimental results indicate that the high brightness of the devices is attributed to the deposition growth of crystallites oriented in the (311), (400) directions. This can be explained by assuming a higher population of erbium being in the trivalent charge state in the (311), (400) planes of the films grown under certain deposition condition. It is concluded that only the part of rare earth dopant being in trivalent charge state in the film contributes to luminescence. The mechanism of the formation of luminescence center and the excitation of Er3+ ion by the electric field are discussed.     

高效率ZnS:Er ACTFELD的研制

对掺饵硫化锌交流电致发光薄膜器件 (ACTFELD) ,根据载流子隧穿势垒层会获得能量增益 ,提高激发效率的原理 ,通过改变常规ZnS :ErACTFELD的基本结构 ,研制出多阻挡层器件。实验证实 ,这种多阻挡层器件具有高的阈值电压和高的电致发光亮度。     

Temperature and flow modulation doping of manganese in ZnS electroluminescent films by low pressure metalorganic chemical vapor deposition

A temperature and flow modulation (TFM) technique has been developed to modulate the manganese doping profile in ZnS phosphor material grown by lowpressure metalorganic chemical vapor deposition for alternating-current thin film electroluminescent devices (TFELDs). In the TFM technique, modulation of both the substrate temperature as well as the flows of metalorganic sources, diethylzinc and tricarbonyl-(methylcyclopentadienyl)-manganese (TCPMn), was used to grow a structure consisting of alternating layers of undoped ZnS at 400°C and Mn-doped ZnS where Mn being incorporated into the undoped ZnS at 550°C. X-ray results indicated that MnS_x phases were present within the ZnS host crystal matrix for the modulation doped samples, while a Mn_xZn_1-xS solid solution was present in the uniformly doped samples. The luminescence efficiency of the TFELDs could be modified by growing the phosphor with dopant (luminescent center) modulation. The TFELDs with a single modulated doping phosphor layer showed lower threshold voltages in the range 70 to 80 V with light emission in the 580 to 587 nm wavelength range. With a twofold increase in the total thickness of the undoped ZnS layer, the brightness and the luminescence efficiency, measured at the threshold voltage plus 40 V, increased by a factor of 20 and 10, respectively. The electroluminescent (EL) characteristics of the phosphors with multiple dopant layers showed higher luminescence efficiency. By using the TFM growth technique, one can engineer the luminescent center distribution in the phosphor layer to improve the EL characteristics.     

Effect of bulk and planar heterojunctions based charge generation layers on the performance of tandem organic light-emitting diodes

Tandem organic light-emitting diodes (OLEDs) were fabricated using organic planar and bulk heterojunctions based charge generation layers (CGLs), which were composed of cobalt phthalocyanine (CoPc) and fullerene (C₆₀). The electroluminescent (EL) characteristics of these two kinds of devices were systematically studied. The results showed that, compared to the corresponding devices with planar heterojunction (PHJ) based CGL, the tandem OLEDs with bulk heterojunction (BHJ) based CGL exhibited a dramatic improvement of performance. By investigating the electrical characteristics of CGLs, it was found that more hetero-interfaces introduced in the BHJ blend were beneficial for generating more interfacial dipoles and charge carriers, and the optimized charge transport pathways were favorable to promote both electron and hole mobilities. As a result, the improved charge carrier balance led to the efficiency enhancement of device performance. The results demonstrated the advantageous effect of BHJ blend film for the rational design of CGLs on the realization of high OLEDs performance.     

Study on Surface States of Zinc Sulfide Electroluminescence Thin Films

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Elevated field insulator (ELFIN) process for device isolation of ultrathin SOI MOSFETs with top silicon film less than 20 nm

New device isolation process, called elevated field insulator (ELFIN) process, for ultrathin SOI devices with top silicon film less than 20 nm has been proposed and successfully demonstrated. In ELFIN process, gate oxidation and subsequent gate poly-Si deposition is followed by conventional STI process. ELFIN process has a field region elevated compared with active silicon region, leading to prevention of silicon edge from being wrapped around by gate poly-Si. It is found that thin-film SOI NMOSFETs with ELFIN process have better reverse narrow channel effect about 50% at W/sub G/=0.3 /spl mu/m than that with conventional shallow trench isolation (STI) process.     

Analysis of alternating current driven electroluminescence in organic light emitting diodes: A comparative study

The alternating current (AC) responses of double-injection and double-insulated organic light-emitting diodes (OLEDs) were investigated and compared. To reveal the electroluminescent (EL) processes in these devices, the AC voltage and frequency dependence of the EL intensity and capacitive current were studied in the time domain with a focus on phase difference analysis. It was found that the voltage-dependent transit time and frequency-dependent carrier distribution were important for the AC-driven performance of the double-injection OLEDs. In contrast, although the double-insulated OLEDs shared some similarities with the double-injection OLEDs, they had some unique characteristics, which were the absence of resistive current and phase shift of EL profiles. It was revealed that the EL in the double-insulated OLEDs was driven by the displacement current generated by the ionization of the doped layers, which, however, formed space charge regions and undermined the EL emission. The space charge redistributed the electric field across the devices after the initiation of EL, making the EL maintain for a limited time interval. This effect was significant under low frequency and high AC voltage. Comparing the phase difference between both devices, it was indicated that the space charge effect was responsible for the observed EL phase shift and the asymmetric EL profiles at low frequency and high AC voltage in the double-insulated OLEDs. The proposed model was also of help to understand the EL saturation phenomena with AC frequency and voltage in those devices.     

Effect of BCP ultrathin layer on the performance of organic light-emitting devices

Based on conventional double layer device, triple layer organic light-emitting diodes （OLEDs） with two heterostructures of indium-tin oxide （ITO）/N,N＇-diphenyl-N,N＇-bis（1-naphthyl）（1,1 ＇-biphenyl）-4,4＇-diamine（NPB）/2,9-dimethyl-4,7-diphenyl- 1,10-phenanthroline （BCP）/8-Hydroxyquinoline aluminum （Alq3）/Mg：Ag USing vacuum deposition method have been fabricated. The influence of different film thickness of BCP layer on the performance of OLEDs has been investigated. The results showed that when the thickness of the BCP layer film gradually varied from 0.1 nm to 4.0 nm, the electroluminescence （EL） spectra of the OLEDs shifted from green to greenish-blue to blue, and the BCP layer acted as the recombination region of charge carriers related to EL spectrum, enhancing the brightness and power efficiency. The power efficiency of OLEDs reached as high as 7.3 lm/W.