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 共查询到19条相似文献,搜索用时 156 毫秒
1.
Based on the analysis of DC characteristics of silicon bipolar transistors at low temperature, DC analytic models of ECL circuit at low temperature are derived, then compared with the experimental data and computer simulation results. The modification of SPICE BJT model about temperature and design of low temperature ECL circuit are discussed.  相似文献   

2.
The parasitic capacitance effect and its influence to the performance have been investigated in Bipolar Junction Metal-Oxide-Semiconductor Field-Effect Transistor (BJMOSFET). The frequency characteristic equivalent circuit and high frequency response model of BJMOSFET have been presented. The frequency characteristic of BJMOSFET is simulated using the multi-transient analytical method and PSPICE9 simulator. The conclusions that BJMOSFET owns less total capacitance, wider frequency band, better transient characteristic and better frequency responses are reached by comparing with the traditional MOSFET at the same structure parameters and bias conditions. BJMOSFET, as a novel promising high frequency device, would be desired to find application in future integrated circuit.  相似文献   

3.
This paper presents a robust and novel technique for the circuit simulation of ESD (ElectroStatic discharge) snap-back characteristics. A new linearization scheme by introducing current as independent variable for the avalanche current model in ESD evaluation shows a good convergence behavior during ESD stress simulation. This technique is compatible with the traditional circuit simulator based on the Modified nodal analysis (MNA) like SPICE. We have implemented the well known Amerasekera's ESD MOSFET model in SPICE3fS. The commonly used ESD protection configurations such as GGNMOS (Gate-grounded NMOS) and GCNMOS (Gatecoupled NMOS) are simulated and the simulation results demonstrated the good convergence behavior of this new technique.  相似文献   

4.
Theoretical Analysis and Simulation of BJFET Obstructive Characteristics   总被引:1,自引:1,他引:0  
A new bipolar junction field-effect transistor (BJFET) was described. The theoretical analysis and computer simulation of BJFET obstructive characteristic are achieved. The gate bias voltage affects the BJFET obstructive voltage greatly. The BJFET obstructive characteristic is relevant to structure parameters of channel width W and channel length L. The decrease-bias-voltage operation can weaken the device obstructive characteristic. The forward turn in device forward obstructive region can also affect the BJFET obstructive characteristic. BJFET has a good high temperature obstructive characteristic and can be applying to high temperature status as high voltage switch devices.  相似文献   

5.
To meet the accuracy requirement for the bandgap voltage reference by the increasing data conversion precision of integrated circuits, a high-order curvature-compensated bandgap voltage reference is presented employing the characteristic of bipolar transistor current gain exponentially changing with temperature variations. In addition, an over-temperature protection circuit with a thermal hysteresis function to prevent thermal oscillation is proposed. Based on the CSMC 0.5 μ m 20 V BCD process, the designed circuit is implemented; the active die area is 0.17 × 0.20 mm2. Simulation and testing results show that the temperature coefficient is 13.7 ppm/K with temperature ranging from –40 to 150 ℃, the power supply rejection ratio is –98.2 dB, the line regulation is 0.3 mV/V, and the power consumption is only 0.38 mW. The proposed bandgap voltage reference has good characteristics such as small area, low power consumption, good temperature stability, high power supply rejection ratio, as well as low line regulation. This circuit can effectively prevent thermal oscillation and is suitable for on-chip voltage reference in high precision analog, digital and mixed systems.  相似文献   

6.
The PIN diode model for high frequency dynamic transient characteristic simulation is important in conducted EMI analysis. The model should take junction temperature into consideration since equipment usually works at a wide range of temperature. In this paper, a temperature-variable high frequency dynamic model for the PIN diode is built, which is based on the Laplace-transform analytical model at constant temperature. The relationship between model parameters and temperature is expressed as temperature functions by analyzing the physical principle of these parameters. A fast recovery power diode MUR1560 is chosen as the test sample and its dynamic performance is tested under inductive load by a temperature chamber experiment, which is used for model parameter extraction and model verification. Results show that the model proposed in this paper is accurate for reverse recovery simulation with relatively small errors at the temperature range from 25 to 120 ℃.  相似文献   

7.
This paper proposes a compact model for carbon nanotube field effect transistor (CNTFET) based on surface potential and conduction band minima. The proposed model relates the I–V characteristics to chirality under quantum capacitance limit. C–V characteristics have been efficiently modelled for different capacitance models which are used to find the relationship between CNT surface potential and gate voltage. The role of different capacitances is discussed and it has been found that the proposed circuit compact model strictly follows quantum capacitance limit. The proposed model is efficiently designed for circuit simulations as it denies self-consistent numerical simulation. Furthermore, this compact model is compared with experimental results. The model has been used to simulate an inverter using HSPICE.  相似文献   

8.
A new active digital pixel circuit for CMOS image sensor is designed consisting of four components: a photo-transducer, a preamplifier, a sample & hold (S & H) circuit and an A/D converter with an inverter. It is optimized by simulation and adjustment based on 2 μm standard CMOS process. Each circuit of the components is designed with specific parameters. The simulation results of the whole pixel circuits show that the circuit has such advantages as low distortion, low power consumption, and improvement of the output performances by using an inverter.  相似文献   

9.
A low-power low-voltage analog signal processing circuit has been designed, fabricated, and tested. The circuit is capable of processing an analog sensor current and producing an ASK modulated digital signal with modulating signal frequency proportional to the sensor current level. An on-chip regulator has been included to stabilize the supply voltage received from an external RF power source. The circuit can operate with a power supply as low as 1 V and consumes only about 20 μW of power, which is therefore very suitable for implantable biomedical applications. The whole chip was laid out and fabricated in a 0.35 μm bulk CMOS technology. Experimental results show good agreement with the simulation results.  相似文献   

10.
A new on-chip temperature compensation circuit for a GaAs-based HBT RF amplifier applied to wireless communication is presented.The simple compensation circuit is composed of one GaAs HBT and five resistors with various values,which allow the power amplifier to achieve better thermal characteristics with a little degradation in performance.It effectively compensates for the temperature variation of the gain and the output power of the power amplifier by regulating the base quiescent bias current.The temp...  相似文献   

11.
BJMOSFET 温度特性分析及计算机模拟   总被引:1,自引:0,他引:1       下载免费PDF全文
曾云  高云  晏敏  盛霞  滕涛  尚玉全 《电子器件》2004,27(3):493-497
对兼有双极型和场效应型两种器件特点的双极MOS场效应晶体管(BJMOSFET)的电流和阈值电压的温度特性进行了详细分析.推导出它们随温度变化率的解析表达式。建立BJMOSFET的直流小信号模拟分析等效电路和频率特性模拟分析等效电路,采用通用电路仿真软件PSpice9,对BJMOSFET的输出特性、瞬态特性和幅频特性随温度的变化进行了计算机模拟,得到了随温度变化的特性曲线,并且理论分析与计算机模拟取得了一致的结果。相对传统MOSFET,证明了BJMOSFET具有较好的温度特性。  相似文献   

12.
A new power MOSFET Structure with a pn junction--Bipolar Junction MOSFET (BJMOSFET) has been proposed. The device has the advantages of both BJT and FET. The numerical model of the I-V characteristics of BJMOSFET has been obtained on the basis of both numerical and analytical methods. With the software package of Mathematic, we firstly calculate the gain factor, and then simulate the voltage tranmission, voltage output and voltage transfer's characteristic graphs of the BJMOSFET. The simulation result indicates that BJMOSFET has the current density, which is about 25% larger than the power MOSFET, under the same operating conditions and with the same structure parameters, except that the threshold voltage increase a little.  相似文献   

13.
在分析了双极型晶体管和场效应晶体管各自的特点和不足后,介绍了一种既具有双极型晶体管较大电流容量和功率输出,又具有场效应晶体管高输入阻抗的电子器件——双极MOS场效应晶体管(BJMOSFET),同时指出体硅BJMOSFET的阳极扩散区与衬底之间存在较大的漏电流,可产生较大的寄生效应。提出了一种新型固体电子器件——基于SOI的BJMOSFET,分析了其工作原理j与体硅BJMOSFET比较,由于SOI技术完整的介质隔离避免了体硅器件中存在的大部分寄生效应,使基于SOI的BJMOSFET在体效应、热载流子效应、寄生电容、短沟道效应和闩锁效应等方面具有更优良的特性。  相似文献   

14.
刘文永  冯琪  丁瑞军 《激光与红外》2007,37(13):990-992
在深低温下(T<50K),CMOS器件会出现Kink效应,即I-V特性曲线会发生扭曲。当漏源电压较大时(Vds>4V),漏电流突然加大,电流曲线偏离正常的平方关系。本文通过实验表明,Kink效应对CMOS读出电路中的一些电路结构产生较严重的影响,Kink效应会导致源跟随器输出产生严重的非线性;对于共源放大器和两级运放,Kink效应会使其增益产生非线性。最后,针对影响低温读出电路性能的Kink效应进行分析和研究,提出在低温CMOS读出集成电路设计中如何解决这些问题的方案。  相似文献   

15.
为了讨论温度对模拟电子电路的影响,采用Multisim10仿真软件中的温度扫描分析进行仿真,分析了温度对放大电路的静态工作点以及输出波形的影响,同时验证了负反馈对提高放大电路稳定性的作用和差分放大电路能够抑制零点漂移的性能特点。研究表明,在课堂上利用Multisim10对模拟电子电路进行计算机仿真,再结合理论讲解,可以提高教学质量和教学效果。  相似文献   

16.
光强和温度对多结太阳电池的影响研究   总被引:2,自引:0,他引:2  
基于模拟太阳光源的方法,在室内研究了在不同光照强度、不同工作温度下GaAs多结太阳电池的输出特性.通过实验得出:随着光源辐照强度的增加,太阳电池的特性参数:短路电流Isc线性增加,开路电压Voc对数增加,最大输出功率P线性增加,光电转换效率η随聚光比增加到一定程度后减小.对比分析了光强和温度对电池输出特性的影响,数据结...  相似文献   

17.
王珂  袁野 《变频器世界》2012,(8):107-109
电力电子设备产生的电磁干扰都会超过可接受的水平,所以要利用滤波电路降低他们产生的EMI,这些滤波电路由串联扼流圈和并联电容器构成低通滤波器,文章对EMI滤波元件的高频特性进行分析,给出了电容、电感、电阻等的高频特性、等效电路以及仿真曲线。得出的结论体现出与工频下不同的特性,对滤波设计有重要指导意义。  相似文献   

18.
马颖 《电子世界》2013,(2):39-40
Multisim仿真软件中没有热敏电阻模型,通过应用Multisim 11.0元件库中的基本电阻元件结合热敏电阻的温度特性,介绍了设置PTC、NTC的仿真近似模型的方法,将该热敏电阻模型应用于小冰箱的制冷控制电路中,对其温控系统进行了相应的参数扫描仿真分析,实现了预期的温控功能,从而验证了该模型建立的正确性。  相似文献   

19.
研究线缆发热与光单元传输特性变化之间的关系对光纤复合低压电缆(OPLC)设计及应用十分重要。用COMSOL软件模拟仿真光纤复合低压电缆的稳定运行和短路故障状态,得到其相应的电缆温度分布以及光单元传输损耗特性。选取线缆上不同位置处的特征点进行仿真,结果表明:电缆故障时导体绝缘层内升温较明显,外护套温度变化不明显;光纤温度变化很小,其温度在5 s内只有0.2 ℃的上升。由热膨胀引起的位移很小,使得传输损耗在这2种情况下几乎一样,短路故障对光纤的温度影响不大。设计光单元升温实验得到光缆传输损耗的数据,并与仿真数据进行对比分析。实测温度数据滞后于仿真数据5 s,但与仿真数据变化趋势一致,证明了仿真模型的可靠性和可行性。  相似文献   

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