Some Aspects of the Measurement of the Q Factor of Transmission Lines

This paper deals with two basic problems in the measurement of the Q factor of low-loss transmission lines: 1) long lines and 2) short lines with appreciable direct coupling between the driving and pickup probes. The results are given as relative ordinates on the (distorted) resonance curve which correspond to the correct values of /spl plusmn//spl 1/2//spl delta//spl iota/ or /spl plusmn//spl 1/2//spl delta//spl conint/ defined by Q =/spl conint/ / /spl delta//spl conint/=/spl iota/ / /spl delta//spl iota/.     

Bias point thermal shift growth in Z-cut LiNbO/sub 3/ Modulators

Growth of a bias point thermal shift induced by dc bias in z-cut LiNbO/sub 3/ optical intensity modulators is quantitatively discussed from the standpoint of its impact on field service. During 20 years of device operation under a worst-case dc bias condition, the thermal shift slope grows almost symmetrically with respect to a bias polarity. An initial small thermal shift of around /spl plusmn/7 mV//spl deg/C (3/spl sigma/ distribution bounds) increases continuously over time with biased operation at 55/spl deg/C and approaches /spl plusmn/70 mV//spl deg/C after 20 years. This increased temperature sensitivity would generate approximately a 2-V bias point shift toward the bias rail when modulator is exposed to temperature variation from 55/spl deg/C to 25/spl deg/C.     

Micropositioning device using impact force of piezoelectric flying wires

In this paper, a micropositioning device for precision positioning of miniaturized parts is proposed. This device uses piezoelectric flying wires to generate impact forces for actuating a target object to be positioned. The proposed device features two main characteristics: the impact force can actuate a half-tightened object with a high degree of precision, and the thin flying wire is suitable for the actuation of miniaturized object. Fundamental properties of the proposed device were examined experimentally and theoretically based on a basic positioning unit. Furthermore, for the practical application in assembly works, the control system for a three degrees-of-freedom micropositioning device with positioning range of (/spl plusmn/250 /spl mu/m, /spl plusmn/250 /spl mu/m, /spl plusmn/30 mrad) along the X-, Y-, and /spl Theta//sub z/-axes was implemented. The target object (16/spl times/24/spl times/6 mm) was successfully positioned with positioning accuracies of (/spl plusmn/1 /spl mu/m, /spl plusmn/1 /spl mu/m, /spl plusmn/0.2 mrad), based on a derived heuristic control model.     

Hybrid-Frequency Cutoffs in Gyrotropic Waveguides (Short Papers)

The behavior of the Brillouin diagram /spl omega/ versus /spl beta//sub z/ is analyzed for axially magnetized gyrotropic waveguides in the vicinity of the hybrid frequencies /spl omega//sub k/ and /spl omega//sub i/. Starting from the exact dispersion relation for the modes in the waveguides under consideration it is shown that 1) the dispersion curves terminate at discrete cutoff points located along the /spl omega/ = spl omega//sub k/, /spl omega//sub i/ line and 2) the group velocity at these points is zero. These results modify the behavior of the dispersion curves existing in the literature.     

New formulas for synthesizing microstrip bandpass filters with relatively wide bandwidths

New formulas are proposed for designing wideband parallel-coupled microstrip bandpass filters with improved prediction of bandwidth. When a fractional bandwidth /spl Delta/ is required, a correction /spl theta/=(/spl pi//2)(1/spl plusmn//spl Delta//2) is incorporated into the formulation for determining the dimensions of each coupled stage. Two filters with /spl Delta/=50% are designed and fabricated to show the improvement. The measurement shows a very good agreement with the simulation.     

Nonlinear optical pulse coupling dynamics

The pulse coupling dynamics in a nonlinear directional coupler (NLDC) is analyzed by using the new normalized coupled nonlinear Schro/spl uml/dinger equations. The operation of an NLDC can be divided into three regions according to L/sub D//spl kappa/: Region 1 (L/sub D//spl kappa//spl les/1), Region 2 (L/sub D//spl kappa/>50), and Region 3 (1相似文献   

Monolithic analog multiplier-divider

The design of a precision general-purpose monolithic analog multiplier-divider based on the principle of the variable transconductance of bipolar transistors is described. The device has two new aspects: first, an eight-transistor multiplier-divider core, and second, an improvement in the accuracy and high-frequency behavior of the input and output circuits having monolithic conversion resistors. The transfer function /spl nu//SUB w/=/spl nu//SUB x//spl nu//SUB y///spl nu//SUB z/ is only dependent on external voltages. An advantage of the multiplier-divider over a multiplier with a fixed internal voltage reference is that the external signal voltages can be accurately related to the relevant reference voltage. Moreover, the additional divider input enlarges the application field. The maximum signal voltages are /spl plusmn/10 V. The untrimmed inaccuracy is typically 2 percent. The nonlinearity is /spl plusmn/0.1 percent. The bandwidth is 6.5 MHz, and the slew rate is 50 V//spl mu/s.     

Simultaneous measurement of temperature and strain based on arc-induced long-period fibre gratings

A study on arc-induced long-period fibre gratings (LPFGs) revealed that their strain sensitivity depends on the electric current of the arc discharge. Based on that property, a sensor scheme comprising two concatenated LPFGs was implemented for discrimination of temperature and strain effects. This sensor presented resolutions of /spl plusmn/0.1/spl deg/C//spl radic/Hz and /spl plusmn/35 /spl mu//spl epsiv///spl radic/Hz, respectively.     

Highly linear 2.5-V CMOS /spl Sigma//spl Delta/ modulator for ADSL+

We present a 90-dB spurious-free dynamic range sigma-delta modulator (/spl Sigma//spl Delta/M) for asymmetric digital subscriber line applications (both ADSL and ADSL+), with up to a 4.4-MS/s digital output rate. It uses a cascade (MASH) multibit architecture and has been implemented in a 2.5-V supply, 0.25-/spl mu/m CMOS process with metal-insulator-metal capacitors. The prototypes feature 78-dB dynamic range (DR) in the 30-kHz to 2.2-MHz band (ADSL+) and 85-dB DR in the 30-kHz to 1.1-MHz band (ADSL). Integral and differential nonlinearity are within /spl plusmn/0.85 and /spl plusmn/0.80 LSB/sub 14 b/, respectively. The /spl Sigma//spl Delta/ modulator and its auxiliary blocks (clock phase and reference voltage generators, and I/O buffers) dissipate 65.8 mW. Only 55 mW are dissipated in the /spl Sigma//spl Delta/ modulator.     

A photonic-link millimeter-wave mixer using cascaded optical modulators and harmonic carrier generation

Efficient frequency conversion into and out of the millimeter wave frequency band has been demonstrated using photonic link signal mixing with cascaded optical modulators. By adjusting the modulator bias point and RF drive power to the modulator introducing the local oscillator signal at f/sub LO/=8.8 GHz, frequency conversions from f/sub s/ to f/sub LO//spl plusmn/f/sub s/, sf/sub LO//spl plusmn/f/sub s/, and 4f/sub LO//spl plusmn/f/sub s/ with respective losses of 4.8, 6.3, and 7.5 dB have been demonstrated. The direct phase noise measurement of the optical RF signal at 2f/sub LO/=17.6 GHz with 1 kHz offset shows -89 dBc/Hz, limited by the RF drive source.     

MOS voltage reference based on polysilicon gate work function difference

A voltage reference in CMOS technology is based upon transistor pairs of the same type except for the opposite doping type of their polysilicon gates. At identical drain currents, the gate voltage difference, close to the silicon bandgap, is 1.2 V/spl plusmn/0.06 V. Circuits for a positive and for a negative voltage reference are presented. Digital voltage tuning improves accuracy. Temperature compensation is provided by proper choice of current ratio or by means of an auxiliary circuit. Voltage drift is about 300 ppm//spl deg/C without compensation, and can be reduced to /spl plusmn/30 ppm//spl deg/C. The circuits work with a supply voltage of 2-10 V and draw a current that is less than 1 /spl mu/A.     

Dispersion compensation based on sampled fiber Bragg gratings fabricated with reconstruction equivalent-chirp method

Using uniform phase mask and conventional fabrication technology with submicrometer rather than nanometer precision, a pure third-order dispersion-compensating fiber Bragg grating (DCFBG) and a tunable slope DCFBG are demonstrated with high performance based on the combined reconstruction equivalent-chirp method and an error correction technique. The former DCFBG has a dispersion varying from /spl sim/1000 to /spl sim/-1000 ps/nm in the 100-GHz passband and group delay ripple is less than /spl plusmn/5 ps. The latter has a dispersion slope varying from -150 to 150 ps/nm/sup 2/ within the 3-nm passband, and its group delay ripple is less than /spl plusmn/10 ps.     

Fabrication and analysis of high-contrast InGaAsP-InP Mach-Zehnder modulators for use at 1.55-/spl mu/m wavelength

A high-contrast ratio, low voltage-length product, multiple quantum well InGaAsP-InP Mach-Zehnder interferometer is demonstrated and analyzed. An on/off ratio of over 40 dB and voltage-length product of 1.8 V-mm were measured, results which are superior to previous reports of similar MQW structures. Using the Lanczos-Helmholtz beam propagation method, we find that the linear and quadratic electrooptic coefficients for InGaAsP quantum wells are r=(3.9/spl plusmn/1.7) pm/V and s=(5.0/spl plusmn/1.5)/spl times/10/sup -19/ m/sup 2//V/sup 2/, respectively. We also demonstrate active optical alignment of the modulator guides using integrated waveguide light emitting diodes.     

A half-moon antenna

This work presents a half-moon antenna (HMA), which is composed of two semi-circular top and bottom conducting plates joined by a rectangular conducting plate. The HMA has a wide radiation beam. Radiation in the y-z plane (in the E plane) is hemispherical with a half-power beam width (HPBW) of more than 200/spl deg/. Radiation in the x-y plane (in the H plane) forms a sector beam with an HPBW of more than 100/spl deg/. To reduce the backward radiation and improve the gain, chokes are added to the HMA. An increase in the gain of approximately 1 dB is obtained. In order to obtain a tilted beam, the radius of the bottom plate is reduced. The maximum beam direction of the tilted beam /spl theta//sub max/ is not sensitive to frequency. Within a frequency range of 11 to 14 GHz (24%), /spl theta//sub max/=167/spl deg//spl plusmn/2/spl deg/. The gain is found to be G=9.5/spl plusmn/0.5 dBi within this same frequency range.     

Low-cost 1.55-/spl mu/m InGaAsP-InP spot size converted (SSC) laser with conventional active layers

We report the realization of a low cost 1.55-/spl mu/m spot size converted (SSC) laser using conventional SCH-MQW active layers. The laser consists of a rectangular gain section, a linear taper and a passive waveguide. The lateral taper and the passive waveguide are fabricated on the same lower SCH layer, using conventional photolithography and RIE (reactive ion etching). The device exhibits low beam divergence of 6.6/spl deg//spl times/10.9/spl deg/ and -2.2-dB coupling loss with a cleaved single-mode fiber. The 1-dB alignment tolerance is /spl plusmn/2.15 /spl mu/m in vertical direction and /spl plusmn/2.3 /spl mu/m in lateral direction, respectively.     

A 2-V 23-/spl mu/A 5.3-ppm//spl deg/C curvature-compensated CMOS bandgap voltage reference

A high-order curvature-compensated CMOS bandgap reference, which utilizes a temperature-dependent resistor ratio generated by a high-resistive poly resistor and a diffusion resistor, is presented in this paper. Implemented in a standard 0.6-/spl mu/m CMOS technology with V/sub thn//spl ap/|V/sub thp/|/spl ap/0.9 V at 0/spl deg/C, the proposed voltage reference can operate down to a 2-V supply and consumes a maximum supply current of 23 /spl mu/A. A temperature coefficient of 5.3 ppm//spl deg/C at a 2-V supply and a line regulation of /spl plusmn/1.43 mV/V at 27/spl deg/C are achieved. Experimental results show that the temperature drift is reduced by approximately five times when compared with a conventional bandgap reference in the same technology.     

Arbitrary dual-band components using composite right/left-handed transmission lines

Arbitrary dual-band microstrip components using composite right/left-handed (CRLH) transmission lines (TLs) are presented. Theory, synthesis procedure, and implementation of the dual-band quarter-wave (/spl lambda//4) CRLH TL are presented. Arbitrary dual-band operation is achieved by the frequency offset and the phase slope of the CRLH TL. The frequency ratio of the two operating frequencies can be a noninteger. The dual-band /spl lambda//4 open/short-circuit stub, dual-band branch-line coupler (BLC), and dual-band rat-race coupler (RRC) are also demonstrated. The performances of these dual-band components are demonstrated by both simulated and measured results. Insertion loss is larger than 23 dB for the shunt /spl lambda//4 CRLH TL open-circuit stub and less than 0.25 dB for the shunt /spl lambda//4 CRLH TL short-circuit stub at each passband. The dual-band BLC exhibits S/sub 21/ and S/sub 31/ larger than -4.034 dB, return losses larger than 17 dB, isolations larger than 13 dB, phase differences 90/spl deg//spl plusmn/1.5/spl deg/, and gain imbalance less than 0.5 dB at each passband. The dual-band RRC exhibits S/sub 21/ and S/sub 31/ larger than -4.126 dB, return losses larger than 12 dB, isolations larger than 30 dB, phase difference 180/spl deg//spl plusmn/4/spl deg/, and gain imbalance less than 0.2 dB at each passband.     

A 5-6-GHz bipolar quadrature-phase Generator

A wide-band fully monolithic quadrature-phase generator is implemented. It consists of a bipolar frequency doubler with differential outputs and a regenerative divider with 5 mV/sub rms/ maximum sensitivity. Measured residual phase noise is 相似文献   

A monolithic 14 bit A/D converter

A 14 bit monolithic successive approximation A/D converter with 7 /spl mu/s conversion time is described. A special system called `dynamic element matching' is used to construct the high-accuracy D/A converter needed in the system. The high linearity of the converter (/spl plusmn//SUP 1///SUB 4/ LSB) results in an 84 dB S/N ratio. The high-speed comparator consists of a wide-band (75 MHz) clamped operational amplifier followed by a strobed flip-flop to freeze the output data. In the digital part, current mode logic (CML) is used for speed and low interference generation with respect to the analog circuitry. Digital input and outputs are TTL compatible. A low-noise, high-stability reference source with a temperature dependence of /spl plusmn/0.5 ppm//spl deg/C over -20 to +85/spl deg/C completes the A/D function. The chip is processed in a standard bipolar process using double layer interconnection. The die size is 3.5/spl times/4.4 mm/SUP 2/.