Structural dependence of microwave dielectric properties in ilmenite-type Mg(Ti1-xNbx)O3 solid solutions by Rietveld refinement and Raman spectra

Mg(Ti_1-xNb_x)O₃ (x = 0–0.09) ceramics were prepared by the conventional solid-state reaction method. The phase composition, sintering characteristics, microstructure and dielectric properties of Ti⁴⁺ replacement by Nb⁵⁺ in the formed solid solution Mg(Ti_1-xNb_x)O₃ (x = 0–0.09) ceramics were systematically studied. The structural variations and influence of Nb⁵⁺ doping in Mg(Ti_1-xNb_x)O₃ were also systematically investigated by X-ray diffraction and Raman spectroscopy, respectively. X-ray diffraction and its Rietveld refinement results confirmed that Mg(Ti_1-xNb_x)O₃ (x = 0–0.09) ceramics crystallised into an ilmenite-type with R-3 (148) space group. The replacement of the low valence Ti⁴⁺ by the high valence Nb⁵⁺ can improve the dielectric properties of Mg(Ti_1-xNb_x)O₃ (x = 0–0.09). This paper also studied the different sintering temperatures for Mg(Ti_1-xNb_x)O₃ (x = 0–0.09) ceramics. The obtained results proved that 1350 °C is the best sintering temperature. The permittivity and Q × f initially increased and then decreased mainly due to the effects of porosity caused by the sintering temperature and the doping amount of Nb₂O₅, respectively. Furthermore, the increased Q × f is correlated to the increase in Ti–O bond strength as confirmed by Raman spectroscopy, and the electrons generated by the oxygen vacancies will be compensated by Nb⁵⁺ to a certain extent to suppress Ti⁴⁺ to Ti³⁺, which was confirmed by XPS. The increase in τ_f from ?47 ppm/°C to ?40.1 ppm/°C is due to the increment in cell polarisability. Another reason for the increased τ_f is the reduction in the distortion degree of the [TiO₆] octahedral, which was also confirmed by Raman spectroscopy. Mg(Ti_0.95Nb_0.05)O₃ ceramics sintered at 1350 °C for 2 h possessed excellent microwave dielectric properties of ε_r = 18.12, Q × f = 163618 GHz and τ_f = ?40.1 ppm/°C.     

Influence of Ti4+ substitution for Ta5+ on the crystal structure,Raman spectra,and microwave dielectric properties of Ba3Ta4-4xTi4+5xO21 ceramics

This paper systematically investigated the influence of Ti⁴⁺ substitution for Ta⁵⁺ on the phase composition and microwave dielectric properties of Ba₃Ta_4-4xTi_4+5xO₂₁ (x = 0.1, 0.2, and 0.3) ceramics with hexagonal tungsten bronze-like structures. X-ray diffraction and Rietveld refinement results indicated that single-phase Ba₃Ta₄Ti₄O₂₁ could be obtained only with the x values of 0.1 and 0.2, and a secondary phase was detected at an x value of 0.3. The valence state of Ba₃Ta_4-4xTi_4+5xO₂₁ (x = 0.2) ceramics was analyzed through X-ray photoelectron spectroscopy. Increasing Ti⁴⁺/Ta⁵⁺ ratios could reduce sintering temperature and improve the microwave dielectric properties of Ba₃Ta_4-4xTi_4+5xO₂₁ solid solutions. However, the dielectric properties, particularly the quality factor, of Ba₃Ta_4-4xTi_4+5xO₂₁ ceramics deteriorated severely as a result of oxygen vacancy defects caused by the transition of the valence state from Ti⁴⁺ to Ti³⁺ when x = 0.2 and the coexistence of the secondary phase when x = 0.3. Infrared reflectivity spectroscopy was performed to explore the intrinsic dielectric properties of Ba₃Ta_4-4xTi_4+5xO₂₁ (x = 0.1) ceramics. The measured and extrapolated microwave dielectric properties of Ba₃Ta_4-4xTi_4+5xO₂₁ (x = 0.1) ceramics sintered at 1240 °C for 6 h were ε_r ~ 46.5, Q × f = 13,900 GHz, τ_f ~ +49.4 ppm/°C, and ε_r ~ 44, Q × f = 34,850 GHz.     

Li4Mg3Ti2O9: A novel low-loss microwave dielectric ceramic for LTCC applications

Low-loss novel Li₄Mg₃Ti₂O₉ dielectric ceramics with rock-salt structure were prepared by a conventional solid-state route. The crystalline structure, chemical bond properties, infrared spectroscopy and microwave dielectric properties of the abovementioned system were initially investigated. It could be concluded from this work that the extrinsic factors such as sintering temperatures and grain sizes significantly affected the dielectric properties of Li₄Mg₃Ti₂O₉ at lower sintering temperatures, while the intrinsic factors like bond ionicity and lattice energy played a dominant role when the ceramics were densified at 1450 °C. In order to explore the origin of intrinsic characteristics, complex dielectric constants (ε^’ and ε^’’) were calculated by the infrared spectra, which indicated that the absorptions of phonon oscillation predominantly effected the polarization of the ceramics. The Li₄Mg₃Ti₂O₉ ceramics sintered at 1450 °C exhibited excellent properties of ε_r=15.97, Q·f=135,800 GHz and τ_f=−7.06 ppm/°C. In addition, certain amounts of lithium fluoride (LiF) were added to lower the sintering temperatures of matrix. The Li₄Mg₃Ti₂O₉−3 wt% LiF ceramics sintered at 900 °C possessed suitable dielectric properties of ε_r=15.17, Q·f =42,800 GHz and τ_f=−11.30 ppm/°C, which made such materials promising for low temperature co-fired ceramic applications (LTCC).     

Improved sintering behavior and microwave dielectric properties of SnO2-based ceramics and their LTCC materials with ultrawide temperature stability

Microwave dielectric ceramics with simple composition, a low permittivity (ε_r), high quality factor (Q × f) and temperature stability, specifically in the ultrawide temperature range, are vital for millimetre-wave communication. Hence, in this study, the improvements in sintering behavior and microwave dielectric properties of the SnO₂ ceramic with a porous microstructure were investigated. The relative density of the Sn_1-xTi_xO₂ ceramic (65.1%) was improved to 98.8%, and the optimal sintering temperature of Sn_1-xTi_xO₂ ceramics reduced from 1525 °C to 1325 °C when Sn⁴⁺ was substituted with Ti⁴⁺. Furthermore, the ε_r of Sn_1-xTi_xO₂ (0 ≤ x ≤ 1.0) ceramics increased gradually with the rise in x, which can be ascribed to the increase in ionic polarisability and rattling effects of (Sn_1-xTi_x)⁴⁺. The intrinsic dielectric loss was mainly controlled by r_c (Sn/Ti–O), and the negative τ_f of the SnO₂ ceramic was optimised to near zero (x = 0.1) by the Ti⁴⁺ substitution for Sn⁴⁺. This study also explored the ideal microwave dielectric properties (ε_r = 13.7, Q × f = 40,700 GHz at 9.9 GHz, and τ_f = ?7.2 ppm/°C) of the Sn_0.9Ti_0.1O₂ ceramic. Its optimal sintering temperature was decreased to 950 °C when the sintering aids (ZnO–B₂O₃ glass and LiF) were introduced. The Sn_0.9Ti_0.1O₂-5 wt% LiF ceramic also exhibited excellent microwave dielectric properties (ε_r = 12.8, Q × f = 23,000 GHz at 10.5 GHz, and τ_f = ?17.1 ppm/°C). At the ultrawide temperature range (?150 °C to +125 °C), the τ_ε of the Sn_0.9Ti_0.1O₂-5 wt% LiF ceramic was +13.3 ppm/°C, indicating excellent temperature stability. The good chemical compatibility of the Sn_0.9Ti_0.1O₂-5 wt% LiF ceramic and the Ag electrode demonstrates their potential application for millimetre-wave communication.     

Triple-doping of (Ga1/2Nb1/2)xTi1-xO2 ceramics with Al3+ for enhanced giant dielectric response with simultaneous decrease in dielectric loss

An acceptor-donor co-doped (Ga_1/2Nb_1/2)_0.1Ti_0.9O₂ ceramic is triple-doped with Al³⁺, followed by sintering at 1450 °C for 5 h to obtain (Al_xGa_1/2-xNb_1/2)_0.1Ti_0.9O₂ ceramics with improved giant dielectric properties. Homogeneous dispersion of all dopants inside the grains, along with the partially segregated dispersion of the Ga³⁺ dopant along the grain boundaries, is observed. The (Al_xGa_1/2-xNb_1/2)_0.1Ti_0.9O₂ ceramics exhibit high dielectric permittivities (ε′～4.2–5.1 × 10⁴) and low loss tangents (tanδ～0.007–0.010), as well as a low-temperature coefficients (<±15%) between ? 60 and 200 °C. At 1 kHz, tanδ is significantly reduced by ～4.4 times, while ε′ is increased by ～3.5 times, which is attributed to the higher Al³⁺/Ga³⁺ ratio. The value of tanδ at 200 °C is as low as 0.04. The significantly improved dielectric properties are explained based on internal and surface barrier-layer capacitor effects, which are primarily produced by the Ga³⁺ and Al³⁺ dopants, respectively, whereas the semiconducting grains are attributed to Nb⁵⁺ doping ions.     

Investigation on phase structure,spectral characteristics,microstructure and microwave dielectric properties of Li2Zn[Ti1-x(Co1/3Nb2/3)x]3O8 (0.0 ≤ x ≤ 0.4) ceramics

In this paper, a series of Li₂Zn[Ti_1-x(Co_1/3Nb_2/3)_x]₃O₈ (0.0 ≤ x ≤ 0.4) ceramics were prepared via the conventional solid-state method. The influences of (Co_1/3Nb_2/3)⁴⁺ complex ions on the phase composition, spectral characteristics, microstructure, and microwave dielectric properties of Li₂Zn[Ti_1-x(Co_1/3Nb_2/3)_x]₃O₈ ceramics were studied systematically. XRD analysis accompanied with Rietveld refinements showed that pure Li₂ZnTi₃O₈ solid solution ceramics with the cubic spinel structure were obtained at x = 0.2–0.4. New Raman-active mode of about 858 cm⁻¹ should be attributed to the vibrations of NbO₆ due to the high bond energy of Nb–O bonds, exerting a certain impact on the structure and performance of Li₂Zn[Ti_1-x(Co_1/3Nb_2/3)_x]₃O₈ ceramics. XPS results indicated that Nb⁵⁺ ion donor suppressed the deoxidation process and therefore resulted in the disappearance of Ti³⁺ ion and oxygen vacancy. The downward trend variation in the ε_r value with the increase of (Co_1/3Nb_2/3)⁴⁺ content could be explained by the presence of “compressed” cations and “rattling” cations effect. In addition, the Q × f of the current ceramics was closely dependent on relative density, grain size, FWHM, and oxygen vacancy. Good combined microwave dielectric properties of ε_r = 24.5, Q × f = 91,250 GHz, and τ_f = −16.8 ppm/°C were achieved for the Li₂Zn[Ti_0.8(Co_1/3Nb_2/3)_0.2]₃O₈ ceramic sintered at 1120 °C. High quality factor gives evidence that the Li₂Zn[Ti_0.8(Co_1/3Nb_2/3)_0.2]₃O₈ ceramic is an appealing candidate for highly selective microwave devices.     

The effect of co-substitution on the microwave dielectric properties of Ba6-3xNd8+2xTi18O54(x=2/3) ceramics

In this work, the microwave dielectric properties of Ba₄(Nd_1-yBi_y)_28/3Ti_18-x(Al_1/2Ta_1/2)_xO₅₄(0≤x≤2, 0.05≤y≤0.2) ceramics co-substituted by A/B-site were studied. Firstly, (Al_1/2Ta_1/2)⁴⁺ was used for substitution at B-site. At 0≤x≤1.5, the above mentioned ceramic was found to exist in single-phase tungsten bronze structure, but at x = 2.0, the secondary phase appeared. Although the dielectric constant decreased by doping the (Al_1/2Ta_1/2)⁴⁺, but the quality factor was observed to improve by 40% and the temperature coefficient of resonant frequency decreased by 75%. Based on the above results, Bi³⁺ was introduced to Ba₄Nd_28/3Ti₁₇(Al_1/2Ta_1/2)O₅₄. The introduction of Bi³⁺ reduced the sintering temperature, greatly improved the dielectric constant, and ultimately decreased the temperature coefficient of resonant frequency, but it led to deterioration of quality factor. At last, with appropriate site-substitution content control (x = 1.0,y = 0.15), excellent comprehensive properties (ε_r = 89.0, Q × f = 5844 GHz @ 5.89 GHz，TCF = +8.7 ppm/°C) were obtained for the samples sintered at 1325 °C for 4 h.     

Colossal dielectric permittivity and electrical properties of the grain boundary of Ca1−3x/2YbxCu3−yMgyTi4O12 (x=0.05, y=0.05 and 0.30)

Dielectric properties of Ca_1−3x/2Yb_xCu_3−yMg_yTi₄O₁₂ (x=0.05, y=0.05 and 0.30) prepared using a modified sol–gel method and sintered at 1070 °C for 4 h were investigated. The mean grain sizes of the CaCu₃Ti₄O₁₂ and co-doped Ca_0.925Yb_0.05Cu_3−yMg_yTi₄O₁₂ (y=0.05 and 0.30) ceramics were ≈15.86, ≈3.37, and ≈2.32 μm, respectively. Interestingly, the dielectric properties can be effectively improved by co-doping with Yb³⁺ and Mg²⁺ ions to simultaneously control the microstructure and properties of grain boundaries, respectively. These properties were improved over those of single-doped and un-doped CaCu₃Ti₄O₁₂ ceramics. A highly frequency−independent colossal dielectric permittivity (≈10⁴) in the range of 10²–10⁶ Hz with very low loss tangent values of 0.018–0.028 at 1 kHz were successfully achieved in the co-doped Ca_0.925Yb_0.05Cu_3−yMg_yTi₄O₁₂ ceramics. Furthermore, the temperature stability of the colossal dielectric response of Ca_1−3x/2Yb_xCu_3−yMg_yTi₄O₁₂ was also improved to values of less than ±15% in the temperature range from −70 to 100 °C.     

Effects of (Cr0.5Ta0.5)4+ on structure and microwave dielectric properties of Ca0.61Nd0.26TiO3 ceramics

The Ca_0.61Nd_0.26Ti_1-x(Cr_0.5Ta_0.5)_xO₃ (CNT-CTx) ceramics with orthorhombic perovskite structure were prepared using the conventional solid-state method. The X-ray diffraction (XRD), Raman spectra and X-ray photoelectron spectra (XPS) were employed to investigate the correlations between crystal structure and microwave dielectric properties of CNT-CTx ceramics. The XRD results showed that all CNT-CTx samples were crystallized into the orthorhombic perovskite structure. The SEM micrographs indicated that the average grain size of samples depended on the sintering temperature. As (Cr_0.5Ta_0.5)⁴⁺ concentration increased, there was a significant decrease in the average grain size of samples. The short range order (SRO) structure and structural distortion of oxygen octahedra proved to exist in CNT-CTx crystals according to the analysis of Raman spectra results. The microwave dielectric properties highly depended on the full width at half maximum (FWHM) of Raman spectra, oxygen octahedra distortion, reduction of Ti⁴⁺ to Ti³⁺ and bond valence. At last, the CNT-CT0.05 ceramic sintered at 1420?°C for 4?h exhibited the good and stable comprehensive microwave dielectric properties: relative permittivity of 96.5, quality factor of 14,360?GHz, and temperature coefficient of resonant frequency of +153.3?ppm/°C.     

Colossal permittivity and impedance analysis of tantalum and samarium co-doped TiO2 ceramics

In this study, (Ta_0.5Sm_0.5)_xTi_1−xO₂ (x = 0, 0.02, 0.06, 0.15) ceramics (referred to as TSTO) were fabricated by a standard solid-state reaction. As revealed by the X-ray diffraction (XRD) spectra, the TSTOs exhibit a tetragonal rutile TiO₂ structure. All the TSTO ceramics display colossal permittivity (~ 10²–10⁵). Moreover, the optimal ceramic, (Ta_0.5Sm_0.5)_0.02Ti_0.98O₂, exhibits high performance over a wide temperature range from 20 °C to 160 °C. At 1 kHz, the dielectric constant and dielectric loss are 2.30 × 10⁴ and 0.11 at 20 °C; they are 3.85 × 10⁴ and 0.64 at 160 °C. Dielectric and impedance spectra analyses for the TSTO ceramics indicate that the CP behavior over a broad temperature range in (Ta+Sm) co-doped TiO₂ could be explained by the internal barrier layer capacitance (IBLC) model, which consists of semiconducting grains and insulating grain boundaries.     

Colossal dielectric response and relaxation behavior in novel system of Zr4+ and Nb5+ co-substituted CaCu3Ti4O12 ceramics

In this work, we developed a novel system of isovalent Zr⁴⁺ and donor Nb⁵⁺ co-doped CaCu₃Ti₄O₁₂ (CCTO) ceramics to enhance dielectric response. The influences of Zr⁴⁺ and Nb⁵⁺ co-substituting on the colossal dielectric response and relaxation behavior of the CCTO ceramics fabricated by a conventional solid-phase synthesis method were investigated methodically. Co-doping of Zr⁴⁺ and Nb⁵⁺ ions leads to a significant reduction in grain size for the CCTO ceramics sintered at 1060 °C for 10 h. XRD and Raman results of the CaCu₃Ti_3.8-xZr_xNb_0.2O₁₂ (CCTZNO) ceramics show a cubic perovskite structure with space group Im-3. The first principle calculation result exhibits a better thermodynamic stability of the CCTO structure co-doped with Zr⁴⁺ and Nb⁵⁺ ions than that of single-doped with Zr⁴⁺ or Nb⁵⁺ ion. Interestingly, the CCTZNO ceramics exhibit greatly improved dielectric constant (~10⁵) at a frequency range of 10²–10⁵ Hz and at a temperature range of 20–210 °C, indicating a giant dielectric response within broader frequency and temperature ranges. The dielectric properties of CCTZNO ceramics were analyzed from the viewpoints of defect-dipole effect and internal barrier layer capacitance (IBLC) model. Accordingly, the immensely enhanced dielectric response is primarily ascribed to the complex defect dipoles associated with oxygen vacancies by co-doping Zr⁴⁺ and Nb⁵⁺ ions into CCTO structure. In addition, the obvious dielectric relaxation behavior has been found in CCTZNO ceramics, and the relaxation process in middle frequency regions is attributed to the grain boundary response confirmed by complex impedance spectroscopy and electric modulus.     

Crystal structure and microwave dielectric properties of garnet-type Ca2YZr2-xTixAl3O12 ceramics for dual-band bandpass filters

Microwave dielectric ceramics with a high-quality factor are vital materials for substrates, dielectric resonators, and filters in millimeter-wave communication systems. Here, a novel microwave dielectric ceramic based on a garnet-type Ca₂YZr₂Al₃O₁₂ compound for bandpass filter was prepared using the solid-state reaction method. Sintering the Ca₂YZr₂Al₃O₁₂ ceramics at 1600 ℃ for 5 h resulted in excellent microwave dielectric properties of ε_r = 10.81 ± 0.16, Qf = 87,628 ± 4000 GHz and τ_f = ?34.3 ± 0.5 ppm/℃. Increasing the Ti⁴⁺ content of the Ca₂YZr_2-xTi_xAl₃O₁₂ ceramics significantly improved the sintering process. Superior microwave dielectric properties (ε_r = 11.93 ± 0.15, Qf = 121,930 ± 2600 GHz and τ_f = ?30.8 ± 0.4 ppm/℃) were obtained for Ca₂YZr_2-xTi_xAl₃O₁₂ (x = 0.3) because of its dense microstructure, large grain size and high lattice energy. The Ca₂YZr_2-xTi_xAl₃O₁₂ (x = 0.3) ceramics were used to fabricate a dual-band bandpass filter with a hairpin structure that exhibited a large return loss (|S₁₁| > 12 dB) and a small insertion loss (|S₂₁| < 0.73 dB). The high performance of the Ca₂YZr_2-xTi_xAl₃O₁₂ ceramics and the corresponding bandpass filter makes this material a potential candidate for millimeter-wave devices.     

Effects of (Cr0.5Ta0.5)4+ on the microstructure,chemical bond characteristics,and dielectric properties of molybdate-based ceramics at microwave and terahertz frequency

In this study, Ce₂ [Zr_1−x (Cr_0.5Ta_0.5)_x]₃(MoO₄)₉ (x = 0.02–0.10) ceramics were synthesized using the solid-state reaction technique, and the crystalline parameters, sintering behaviors, chemical bond characteristics, infrared reflection spectrum, and dielectric response at microwave and terahertz frequency were examined. X-ray diffraction results demonstrated the crystallization of all ceramics in the trigonal structure (R-3c space group), and additional peaks were not detected. The densification point of ceramic was 875 °C. The addition of (Cr_0.5Ta_0.5)⁴⁺ significantly reduced the dielectric loss in the host ceramic. For Ce₂ [Zr_0.96(Cr_0.5Ta_0.5)_0.04]₃(MoO₄)₉, outstanding microwave properties of ε_r = 10.66, Qf = 79,436 GHz, and τ_f = −19.07 ppm/°C were obtained at 875 °C. The chemical bond characteristics were also parameterized to explore the relationship between Zr(CrTa)–O and microwave properties. Infrared spectral results further indicate that phonon vibrations lower than 400 cm⁻¹ contribute to 80% of the polarization. In our comparison between the infrared spectrum and terahertz time-domain spectrum, we found that the permittivity extracted by the latter is closer to the observed value.     

Effect of Sn4+–Isovalent doping concentration on giant dielectric properties of SnxTa0.025Ti0.975-xO2 ceramics

The Sn_xTa_0.025Ti_0.975-xO₂ (x%Sn(TTO)) ceramics with x = 2.5–10% were prepared using a standard mixed-oxide method and sintered at 1450 °C for 3 h to achieve a dense microstructure. The effects of the isovalent–Sn⁴⁺ doping concentration on the crystal structure, microstructure, giant dielectric behavior, and electrical properties were systematically investigated. Continuously enlarged lattice parameters and bond lengths with a single rutile–TiO₂ phase were observed as x% increased. The mean grain size was slightly reduced (～17.3–14.6 μm) due to an increased oxygen vacancy and the solute drag effect. The dielectric permittivity (ε′) decreased with increasing x%, whereas the loss tangent (tanδ) was remarkably reduced. The semiconducting grain resistance of the x%Sn(TTO) ceramics remained unchanged owing to the same Ta⁵⁺ donor concentration. The insulating grain boundary (GB) resistance was extremely increased by more than two orders of magnitude when x% increased from 2.5 to 5.0%, leading to the significantly improved giant dielectric properties. The optimized low tanδ～0.02 and high ε′～10⁴ with temperature coefficient less than ±15% in the range of -60–210 °C were reasonably described by the internal barrier layer capacitor model. Improved dielectric properties can be obtained by engineering GB by varying the Sn⁴⁺–isovalent doping concentration. This study provides an important approach for improving the dielectric properties of co–doped TiO₂ without the creation of complex defect clusters inside the grains.     

Influence of sintering temperature on dielectric properties and crystal structure of corundum-structured Mg4Ta2O9 ceramics at microwave frequencies

Microwave dielectric properties of corundum-structured Mg₄Ta₂O₉ ceramics were investigated as a function of sintering temperatures by an aqueous sol–gel process. Crystal structure and microstructure were examined by X-ray diffraction (XRD) technique and field emission scanning electron microscopy (FE-SEM). Sintering characteristics and microwave dielectric properties of Mg₄Ta₂O₉ ceramics were studied as a function of sintering temperature from 1250 °C to 1450 °C. With increasing sintering temperature, the density, ε_r and Qf values increased, saturating at 1300 °C with excellent microwave properties of ε_r=11.9, Qf=195,000 GHz and τ_f=?47 ppm/°C. Evaluation of dielectric properties of Mg₄Ta₂O₉ ceramics were also analyzed by means of first principle calculation method and ionic polarizability theory.     

The structure evolution and microwave dielectric properties of MgAl2-x(Mg0·5Ti0.5)xO4 solid solutions

In the present work, MgAl_2-x(Mg_0·5Ti_0.5)_xO₄ (x = 0.02, 0.04, 0.06, 0.08, 0.10) solid solutions were synthesized via the traditional solid-state reaction route. The valence state of Ti ions, crystal structural characteristics, and microwave dielectric properties were discussed. A solid solution with spinel structure was revealed by the Rietveld refinement results. The partial substitution of (Mg_0·5Ti_0.5)³⁺ for Al³⁺ lowered the sintering temperature and improved the Q × f value of MgAl₂O₄ ceramic. The MgAl_2-x(Mg_0·5Ti_0.5)_xO₄ solid solutions with x = 0.06 can be well sintered at 1425 °C in an oxygen atmosphere for 8 h and exhibits excellent microwave dielectric properties with ε_r = 9.1, Q × f = 98,000 GHz, τ_f = −61.36 ppm/°C. The sintering temperature of MgAl_1·94(Mg_0·5Ti_0.5)_0.06O₄ microwave dielectric ceramics was approximately 200 °C lower than that of conventional MgAl₂O₄ ceramics.     

Preparation,characterization, and giant dielectric permittivity of (Y3+ and Nb5+) co–doped TiO2 ceramics

The microstructure and giant dielectric properties of Y³⁺ and Nb⁵⁺ co–doped TiO₂ ceramics prepared via a chemical combustion method are investigated. A main rutile–TiO₂ phase and dense ceramic microstructure are obtained in (Y_0.5Nb_0.5)_xTi_1-xO₂ (x = 0.025 and 0.05) ceramics. Nb dopant ions are homogeneously dispersed in the microstructure, while a second phase of Y₂O₃ particles is detected. The existence of Y³⁺, Nb⁵⁺, Ti⁴⁺ and Ti³⁺ as well as oxygen vacancies is confirmed by X–ray photoelectron spectroscopy and X–ray absorption near edge structure analysis. The sintered ceramics exhibit very high dielectric permittivity values of 10⁴–10⁵ in the frequency range of 40–10⁶ Hz. A low loss tangent value of ≈0.08 is obtained at 40 Hz. (Y_0.5Nb_0.5)_xTi_1-xO₂ ceramics can exhibit non–Ohmic behavior. Using impedance spectroscopy analysis, the giant dielectric properties of (Y_0.5Nb_0.5)_xTi_1-xO₂ ceramics are confirmed to be primarily caused by interfacial polarization.     

Ultra-high quality factor and low dielectric constant of (Zn0.5Ti0.5)3+ co-substituted MgAl2O4 ceramic

In this study, MgAl₂O₄-based ceramics with high quality factor (Qf) and low dielectric constant (ε_r ≤ 10) were obtained by fabricating MgAl_2-x(Zn_0.5Ti_0.5)_xO₄ (x = 0–0.5) ceramics via conventional solid-state reaction method. Excellent microwave dielectric properties were achieved for samples at x = 0.5 and sintered at 1550 °C, i.e., ε_r = 9.86, Qf = 263 900 GHz (five times better than that for x = 0 sample) and τ_f = ?92 ppm/°C. The X-ray diffraction (XRD) patterns displayed characteristic peaks of MgAl₂O₄ with spinel structure. MgTi₂O₅ and MgTiO₃ were considered as secondary phases. Scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDS) and relative density analysis indicated that ultra-high Qf values were dominated by dense microstructure, secondary phase and cation vacancies; whereas ε_r values were mainly affected by secondary phase and ionic polarizability. MgAl_2-x(Zn_0.5Ti_0.5)_xO₄ ceramics with excellent microwave dielectric properties have potential application in millimeter-wave communication, dielectric filters, dielectric antennas and resonators.     

Low-loss and ultra-low temperature sintering microwave dielectrics of pure and Ag-modified K2Mg2(MoO4)3 ceramics

Novel K_2–2xAg_2xMg₂(MoO₄)₃ (x = 0–0.09) ceramics were synthesized by conventional solid-state sintering method. Based on the X-ray diffraction (XRD) patterns, all samples were identified to belong to an orthorhombic structure with a space group of P212121(19). The pure phase K₂Mg₂(MoO₄)₃ specimen when sintered at 590 °C revealed the favorable microwave dielectric properties: ε_r of 6.91, Q×f of 21,900 GHz and τ_f of ?164 ppm/°C. The substitution of Ag⁺ for K⁺ in K_2–2xAg_2xMg₂(MoO₄)₃ (x = 0.01–0.09) ceramics led to the more stable structure and dramatically enhanced the Q×f to a value of 54,900 GHz at 500 °C. The microwave dielectric properties were related to the relative density, microstructure, ionic polarization, lattice energy, packing fraction, and bond valence of the ceramics. It was suggested that for ultra-low temperature co-fired ceramic (ULTCC) applications, K_1.86Ag_0.14Mg₂(MoO₄)₃ ceramic could be sintered at 500 °C, which revealed an excellent combination of microwave dielectric properties (ε_r =7.34, Q×f =54,900 GHz and τ_f =–156 ppm/°C) and good chemical compatibility with aluminum electrodes.     

Enhanced piezoelectric activity with good thermal stability and improved electrical resistivity in Ta–Mn co-doped CaBi4Ti4O15 high-temperature piezoceramics

Aurivillius phase CaBi₄Ti_4-x (Ta_2/3Mn_1/3)_xO₁₅ (x = 0–0.1) high-temperature piezoelectric ceramics were fabricated using the conventional solid-state reaction process. The effects of the Ta–Mn co-doping level on the structure, piezoelectric properties and electrical conduction behaviours of the as-prepared CBT (CaBi₄Ti₄O₁₅) ceramics were explored in detail. It was revealed that the Ta–Mn co-doping efficaciously enhanced the electrical performances of the CaBi₄Ti₄O₁₅ ceramic, which may be due to optimisation of the crystal structure and a reduction in the oxygen vacancy concentration. The composition with x = 0.04 presented superior electrical properties with an outstanding piezoelectric constant (d₃₃) of 24 pC/N accompanied by a high Curie temperature (T_C) of 793 °C, an optimised dielectric loss (tanδ) of 1.5%, and an improved resistivity (ρ) of 4.96 × 10⁸ Ω cm at 400 °C. Moreover, the ceramic exhibited impressive thermal stability with the d₃₃ value maintaining 91.7% of its initial value at room temperature (25 °C) after being annealed at 600 °C for 2 h. The improved performance indicates that the Ta–Mn co-doped CaBi₄Ti₄O₁₅ ceramic might be a promising candidate for piezoelectric device applications at elevated temperatures.