Electrical,thermal, and mechanical properties of porous silicon carbide ceramics with a boron carbide additive

The effects of the boron carbide (B₄C) content and sintering atmosphere on the electrical, thermal, and mechanical properties of porous silicon carbide (SiC) ceramics were investigated in the porosity range of 58.3%–70.3%. The electrical resistivities of the nitrogen-sintered porous SiC ceramics (∼10^–1 Ω·cm) were two orders of magnitude lower than those of argon-sintered porous SiC ceramics (∼10¹ Ω·cm). Both the thermal conductivities (3.3–19.8 W·m^–1·K^–1) and flexural strengths (8.1–32.9 MPa) of the argon- and nitrogen-sintered porous SiC ceramics increased as the B₄C content increased, owing to the decreased porosity and increased necking area between SiC grains. The electrical resistivity of the porous SiC ceramics was primarily controlled by the sintering atmosphere owing to the N-doping from the nitrogen atmosphere, and secondarily by the B₄C content, owing to the B-doping from the B₄C. In contrast, the thermal conductivity and flexural strength were dependent on both the porosity and necking area, as influenced by both the sintering atmosphere and B₄C content. These results suggest that it is possible to decouple the electrical resistivity from the thermal conductivity by judicious selection of the B₄C content and sintering atmosphere.     

Influence of sintering atmosphere and BN additives on microstructure and properties of porous SiC ceramics

The effects of the boron nitride (BN) content on the electrical, thermal, and mechanical properties of porous SiC ceramics were investigated in N₂ and Ar atmospheres. The electrical resistivity was predominantly controlled by the sintering atmosphere and secondarily by the BN concentration, whereas the thermal conductivity and flexural strength were more susceptible to changes in the porosity and necking area between the SiC grains. The electrical resistivities of argon-sintered porous SiC ceramics (6.3 × 10⁵ – 1.6 × 10⁶ Ω·cm) were seven orders of magnitude higher than those of nitrogen-sintered porous SiC ceramics (1.5 × 10⁻¹ – 6.0 × 10⁻¹ Ω·cm). The thermal conductivity and flexural strength of the argon-sintered porous SiC ceramics increased from 8.4–11.6 W·m⁻¹ K⁻¹ and from 9.3–28.2 MPa, respectively, with an increase in the BN content from 0 to 1.5 vol%, which was attributed to the increase in necking area and the decrease in porosity.     

Effects of porosity on electrical and thermal conductivities of porous SiC ceramics

The effects of porosity on the electrical and thermal conductivities of porous SiC ceramics, containing Y₂O₃–AlN additives, were investigated. The porosity of the porous SiC ceramic could be controlled in the range of 28–64 % by adjusting the sacrificial template (polymer microbead) content (0–30 wt%) and sintering temperature (1800–2000 °C). Both electrical and thermal conductivities of the porous SiC ceramics decreased, from 7.7 to 1.7 Ω⁻¹ cm⁻¹ and from 37.9 to 5.8 W/(m·K), respectively, with the increase in porosity from 30 to 63 %. The porous SiC ceramic with a coarser microstructure exhibited higher electrical and thermal conductivities than those of the ceramic with a finer microstructure at the equivalent porosity because of the smaller number of grain boundaries per unit volume. The decoupling of the electrical conductivity from the thermal conductivity was possible to some extent by adjusting the sintering temperature, i.e., microstructure, of the porous SiC ceramic.     

Improving specific stiffness of silicon carbide ceramics by adding boron carbide

A strategy for improving the specific stiffness of silicon carbide (SiC) ceramics by adding B₄C was developed. The addition of B₄C is effective because (1) the mass density of B₄C is lower than that of SiC, (2) its Young’s modulus is higher than that of SiC, and (3) B₄C is an effective additive for sintering SiC ceramics. Specifically, the specific stiffness of SiC ceramics increased from ~142 × 10⁶ m²?s^?2 to ~153 × 10⁶ m²?s^?2 when the B₄C content was increased from 0.7 wt% to 25 wt%. The strength of the SiC ceramics was maximal with the incorporation of 10 wt% B₄C (755 MPa), and the thermal conductivity decreased linearly from ~183 to ~81 W?m^?1?K^?1 when the B₄C content was increased from 0.7 to 30 wt%. The flexural strength and thermal conductivity of the developed SiC ceramic containing 25 wt% B₄C were ~690 MPa and ~95 W?m^?1?K^?1, respectively.     

The electrical conductivity properties of B4C ceramics by pressureless sintering

B₄C ceramics with different carbon contents were fabricated by pressureless sintering at 2150 °C with SiC as a sintering additive. The effects of carbon content on microstructure, electrical properties and mechanical properties of B₄C ceramics were investigated. More carbon content leads to a reduction in grain size and an increase in relative density. With the increase of carbon content, the electrical conductivity of the sample gradually changes from nonlinear to linear because of the formation of a conductive network in the sample. The electrical percolation is obtained when the C content is up to 10 wt%, and the electrical resistivity of the corresponding sample is 56.2 Ω cm. In terms of mechanical properties, flexural strength and elastic modulus shows a slight improvement, fracture toughness remains almost constant while Vickers hardness increases significantly.     

Pressureless sintering of SiC ceramics with improved specific stiffness

The effects of B₄C content on the specific stiffness and mechanical and thermal properties of pressureless-sintered SiC ceramics were investigated. SiC ceramics containing 2.5 wt% C and 0.7–20 wt% B₄C as sintering aids could be sintered to ≥ 99.4% of the theoretical density at 2150 °C for 1 h in Ar. The specific stiffness of SiC ceramics increased from 136.1 × 10⁶ to 144.4 × 10⁶ m²‧s⁻² when the B₄C content was increased from 0.7 to 20 wt%. The flexural strength and fracture toughness of the SiC ceramics were maximal with the incorporation of 10 wt% B₄C (558 MPa and 3.69 MPa‧m^1/2, respectively), while the thermal conductivity decreased from ∼154 to ∼83 W‧m⁻¹‧K⁻¹ when the B₄C content was increased from 0.7 to 30 wt%. The flexural strength and thermal conductivity of the developed SiC ceramic containing 20 wt% B₄C were ∼346 MPa and ∼105 W‧m⁻¹‧K⁻¹, respectively.     

Electrical and Thermal Properties of SiC Ceramics Sintered with Yttria and Nitrides

The electrical and thermal properties of SiC ceramics containing 1 vol% nitrides (BN, AlN or TiN) were investigated with 2 vol% Y₂O₃ addition as a sintering additive. The AlN‐added SiC specimen exhibited an electrical resistivity (3.8 × 10¹ Ω·cm) that is larger by a factor of ~10² compared to that (1.3 × 10^?1 Ω·cm) of a baseline specimen sintered with Y₂O₃ only. On the other hand, BN‐ or TiN‐added SiC specimens exhibited resistivity that is lower than that of the baseline specimen by a factor of 10^?1. The addition of 1 vol% BN or AlN led to a decrease in the thermal conductivity of SiC from 178 W/m·K (baseline) to 99 W/m·K or 133 W/m·K, respectively. The electrical resistivity and thermal conductivity of the TiN‐added SiC specimen were 1.6 × 10^?2 Ω·cm and 211 W/m·K at room temperature, respectively. The present results suggest that the electrical and thermal properties of SiC ceramics are controllable by adding a small amount of nitrides.     

Electrically conductive SiC ceramics processed by pressureless sintering

Polycrystalline SiC ceramics with 10 vol% Y₂O₃-AlN additives were sintered without any applied pressure at temperatures of 1900-2050°C in nitrogen. The electrical resistivity of the resulting SiC ceramics decreased from 6.5 × 10¹ to 1.9 × 10⁻² Ω·cm as the sintering temperature increased from 1900 to 2050°C. The average grain size increased from 0.68 to 2.34 μm with increase in sintering temperature. A decrease in the electrical resistivity with increasing sintering temperature was attributed to the grain-growth-induced N-doping in the SiC grains, which is supported by the enhanced carrier density. The electrical conductivity of the SiC ceramic sintered at 2050°C was ~53 Ω⁻¹·cm⁻¹ at room temperature. This ceramic achieved the highest electrical conductivity among pressureless liquid-phase sintered SiC ceramics.     

Effect of Ni content and its particle size on electrical resistivity and flexural strength of porous SiC ceramic sintered at low-temperature using clay additive

A low-temperature sintered porous SiC-based clay-Ni system with controlled electrical resistivity (2.54 × 10¹⁰ Ω cm to 2 Ω cm), and thermal conductivity (3.5 W/m. K to 12.6 W/m. K) was successfully designed. Clay (20 wt% kaolin) was used as a sintering additive in all the compositions. The electrical resistivity, and thermal conductivity was controlled by varying the Ni content (0–25 wt%) in the samples. The electrical resistivity was recorded as low as 2 Ω cm with 25 wt% Ni that was sintered at 1400 °C in argon. The interface reaction between Ni and SiC formed conductive nickel silicide (Ni₂Si), while the transformation of kaolin to mullite strengthened the mechanical properties. Submicron-sized Ni (0.3 μm) was more effective than micron-sized Ni (3.5 μm) in reducing the electrical resistivity, and increasing the thermal conductivity along with flexural strength. A comparative study of sintering temperatures showed that 1400 °C resulted in the lowest electrical resistivity (2 Ω cm) and the highest thermal conductivity of 12.6 W/m. K with flexural strength of 54 MPa at 32% porosity in the SiC-kaolin-Ni system.     

Effects of SiC whisker addition on mechanical,thermal, and permeability properties of porous silica-bonded SiC ceramics

The effects of SiC whisker addition into nano-SiC powder-carbon black template mixture on flexural strength, thermal conductivity, and specific flow rate of porous silica-bonded SiC ceramics were investigated. The flexural strength of 1200°C-sintered porous silica-bonded SiC ceramics increased from 9.5 MPa to 12.8 MPa with the addition of 33 wt% SiC whisker because the SiC whiskers acted as a reinforcement in porous silica-bonded SiC ceramics. The thermal conductivity of 1200°C-sintered porous silica-bonded SiC ceramics monotonically increased from 0.360 Wm^–1K^–1 to 1.415 Wm^–1K^–1 as the SiC whisker content increased from 0 to 100 wt% because of the easy heat conduction path provided by SiC whiskers with a high aspect ratio. The specific flow rate of 1200°C-sintered porous SiC ceramics increased by two orders of magnitude as the SiC whisker content increased from 0 to 100 wt%. These results were primarily attributed to an increase in pore size from 125 nm to 565 nm and secondarily an increase in porosity from 49.9% to 63.6%. In summary, the addition of 33 wt% SiC whisker increased the flexural strength, thermal conductivity, and specific flow rate of porous silica-bonded SiC ceramics by 35%, 133%, and 266%, respectively.     

Synthesis,microstructure and property characterization of Mo4Y2Al3B6 ceramic fabricated by spark plasma sintering

Polycrystalline Mo₄Y₂Al₃B₆ ceramic (92.84 wt% Mo₄Y₂Al₃B₆ and 7.16 wt% MoB) was prepared by spark plasma sintering at 1250 ℃ under 30 MPa using Mo, Y, Al, and B as starting materials. The dense sample obtained has a high relative density of 96.6 %. The average thermal expansion coefficient is 8.38 × 10^?6 K^?1 in the range of 25–1000 ℃. The thermal diffusivity decreases from 6.50 mm²/s at 25 °C to 4.33 mm²/s at 800 °C. The heat capacity, thermal conductivity, and electrical conductivity are 0.30 J·g^?1·K^?1, 11.73 W·m^?1·K^?1, and 0.66 × 10⁶ Ω^?1·m^?1 at 25 °C, respectively. Vickers hardness with increasing load in the range of 10–300 N at room temperature decreases from 10.82 to 9.49 GPa, and the fracture toughness, compressive strength, and flexural strength are 5.14 MPa·m^1/2, 1255.14 MPa, and 384.82 MPa, respectively, showing the promising applications as structural-functional ceramics.     

Microstructure,Thermal Conductivity,and Electrical Properties of In Situ Pressureless Densified SiC–BN Composites

The microstructure, thermal conductivity, and electrical properties of pressureless densified SiC–BN composites prepared from in situ reaction of Si₃N₄, B₄C, and C were systematically investigated, to achieve outstanding performance as substrate materials in electronic devices. The increasing BN content (0.25–8 wt%) in the composites resulted in finer microstructure, higher electrical resistivity, and lower dielectric constant and loss, at the expense of only slight degradation of thermal conductivity. The subsequently annealed composites showed more homogeneous microstructures with less crystal defects, further enhanced thermal conductivities and electrical resistivities, and reduced dielectric constants and losses, compared with the unannealed ones. The enhanced insulating performance, the weakened interface polarization, and the reduced current conduction loss were explained by the gradual equalization of dissolved B and N contents in SiC crystals and the consequent impurity compensation effect. The schottky contact between graphite and p‐type SiC grains presumably played a critical role in the formation of grain‐boundary barriers. The annealed composites doped with 8 wt% BN exhibited considerably high electrical resistivity (4.11 × 10¹¹ Ω·cm) at 100 V/cm, low dielectric constant (16.50), and dielectric loss (0.127) at 1 MHz, good thermal conductivity [66.06 W·(m·K)^?1] and relatively high strength (343 MPa) at room temperature.     

Effect of sintering temperature on electrical properties of SiC/ZrB2 ceramics

SiC/20?wt% ZrB₂ composite ceramics were fabricated via pressureless solid phase sintering in argon atmosphere at different temperature. The effect of sintering temperature on microstructure, electrical properties and mechanical properties of SiC/ZrB₂ ceramics was investigated. Electrical resistivity exhibits twice significant decreases with increasing sintering temperature. The first decrease from 1900?°C to 2000?°C is attributed to the obvious decrease of continuous pore channels in as-sintered materials. The second decrease from 2100?°C to 2200?°C results from the improvement of carbon crystallization and the disappearance of amorphous layers enveloping ZrB₂ grains. Additionally, the increase of sintered density with increasing temperature caused greatly advance of flexural strength, elastic modulus and Vickers hardness. But excessive temperature is detrimental to flexural strength because of SiC grain growth.     

Microstructure and thermophysical properties of B4C/graphite composites containing substitutional boron

B₄C/graphite composites (BGC) containing substitutional boron were fabricated by pressureless sintering of powder mixtures of petroleum coke, coal tar pitch and B₄C. After sintering at 900 °C and graphitizing at 2200 °C, the microstructure of BGC was characterized by SEM, TEM, XRD, Raman spectroscopy and optical microscopy. XPS measurements revealed the formation of BC₃, and the matrix carbon contained around 6 wt.% substitutional boron. The thermal conductivity of the BGC at room temperature is 52.7 W/m K and the flexural strength is up to 35.1 MPa. The bulk density and electrical resistivity are 1.72 g/cm³ and 13.4 μΩ m, respectively. The correlation between microstructure and properties was investigated. The results showed that the microstructure improvement of the BGC has obvious effect on the thermal conductivity, flexural strength, and electrical resistivity.     

Synthesis and properties of conductive B4C ceramic composites with TiB2 grain network

High electrical resistance and low fracture toughness of B₄C ceramics are 2 of the primary challenges for further machining of B₄C ceramics. This report illustrates that these 2 challenges can be overcome simultaneously using core‐shell B₄C‐TiB₂&TiC powder composites, which were prepared by molten‐salt method using B₄C (10 ± 0.6 μm) and Ti powders as raw materials without co‐ball milling. Finally, the near completely dense (98%) B₄C‐TiB₂ interlayer ceramic composites were successfully fabricated by subsequent pulsed electric current sintering (PECS). The uniform conductive coating on the surface of B₄C particles improved the mass transport by electro‐migration in PECS and thus enhanced the sinterability of the composites at a comparatively low temperature of 1700°C. The mechanical, electrical and thermal properties of the ceramic composites were investigated. The interconnected conductive TiB₂ phase at the grain boundary of B₄C significantly improved the properties of B₄C‐TiB₂ ceramic composites: in the case of B₄C‐29.8 vol% TiB₂ composite, the fracture toughness of 4.38 MPa·m^1/2, the electrical conductivity of 4.06 × 10⁵ S/m, and a high thermal conductivity of 33 W/mK were achieved.     

High thermal conductivity silicon nitride ceramics prepared by pressureless sintering with ternary sintering additives

Silicon nitride ceramics were pressureless sintered at low temperature using ternary sintering additives (TiO₂, MgO and Y₂O₃), and the effects of sintering aids on thermal conductivity and mechanical properties were studied. TiO₂–Y₂O₃–MgO sintering additives will react with the surface silica present on the silicon nitride particles to form a low melting temperature liquid phase which allows liquid phase sintering to occur and densification of the Si₃N₄. The highest flexural strength was 791(±20) MPa with 12 wt% additives sintered at 1780°C for 2 hours, comparable to the samples prepared by gas pressure sintering. Fracture toughness of all the specimens was higher than 7.2 MPa·m^1/2 as the sintering temperature was increased to 1810°C. Thermal conductivity was improved by prolonging the dwelling time and adopting the annealing process. The highest thermal conductivity of 74 W/(m∙K) was achieved with 9 wt% sintering additives sintered at 1810°C with 4 hours holding followed by postannealing.     

The thermal,electrical and mechanical properties of porous α-SiC ceramics bonded with Ti3SiC2 and β-SiC via low temperature in-situ reaction sintering

Porous SiC ceramics have recently attracted wide attention for their applications in the electrically heatable filter. Further improvement of the thermal and electrical conductivity without sacrificing permeability is a critical parameter for such applications. In the present work, porous SiC/Ti₃SiC₂ ceramic composites with Ti₃SiC₂ and micro/nano SiC have been prepared from TiC/Si/α-SiC mixtures at a low sintering temperature (1400 °C). Nano-laminated Ti₃SiC₂ enhanced the electrical conductivity, while the good thermal conductivity was achieved through in-situ formed nano β-SiC and raw coarse α-SiC in the porous ceramics. Along with the increase of initial α-SiC particle size from 0.76 to 16.13 μm, the permeability, thermal and electrical conductivity improved due to the decreased porosity and increased pore size in porous SiC/Ti₃SiC₂ ceramics. The results suggested that the decoupling of the electrical conductivity from the thermal conductivity could be tuned by adjusting the initial α-SiC particle size.     

Effect of graphite and Mn3O4 on clay-bonded SiC ceramics for the production of electrically conductive heatable filter

Electrically conductive porous SiC ceramics are attracting substantial attention due to their application in heatable filters, vacuum chuck, and semiconductor processing parts, etc. The main problem is their high processing cost. Ideal candidates from an engineering ceramic perspective will be mechanically durable and have the required electrical properties with sufficiently low fabrication costs. To decrease the sintering temperature, kaolin has been added, but it tended to render the material an insulator. Graphite was used to effectively decrease the electrical resistivity. Additionally, manganese oxide was used to decrease the quantity of kaolin (the component that leads to an insulator material after sintering) and decrease the electrical resistivity while maintaining the mechanical properties. In our study, we found that SiC with 35% kaolin, 20% graphite and 10% manganese oxide can produce samples with 6.5 × 10^?1 Ω cm electrical resistivity and 43.5 MPa flexural strength at a low sintering temperature of 1200 °C.     

Controllable preparation of porous ZrB2–SiC ceramics via using KCl space holders

In this work, a novel and facile technique based on using KCl as space holders, along with partial sintering (at 1900 °C for 30 min), was explored to prepare porous ZrB₂–SiC ceramics with controllable pore structure, tunable compressive strength and thermal conductivity. The as-prepared porous ZrB₂–SiC samples possess high porosity of 45–67%, low average pore size of 3–7 μm, high compressive strength of 32–106 MPa, and low room temperature thermal conductivity of 13–34 W m⁻¹ K⁻¹. The porosity, pore structure, compressive strength and thermal conductivity of porous ZrB₂–SiC ceramics can be tuned simply by changing KCl content and its particle size. The effect of porosity and pore structure on the thermal conductivity of as-prepared porous ZrB₂–SiC ceramics was examined and found to be consistent with the classical model for porous materials. The poring mechanism of porous ZrB₂–SiC samples via adding pore-forming agent combined with partial sintering was also preliminary illustrated.     

Textured CaBi4Ti4O15 ceramics with large piezoelectricity,excellent thermal stability and high resistivity

The bismuth layer-structured ferroelectrics (BLSF) are promising high-temperature piezoelectric materials, in which large piezoelectricity, good thermal stability and high electrical resistivity are desired. Here highly textured CaBi₄Ti₄O₁₅ BLSF ceramics with orientation factor of 82% have been fabricated by spark plasma sintering technique. The piezoelectric coefficient d₃₃ is significantly enhanced by 250%, from 7.2 pC/N for the texture-less sample to 25.3 pC/N for the textured one, accompanied by a high Curie temperature T_C= 788 °C. The variation of d₃₃ is below 5% in the temperature range of 25–500 °C, showing excellent thermal stability. The textured sample exhibits high electrical resistivity ρ = 2.1 × 10¹¹ Ω·cm, an order of magnitude larger than that of the texture-less sample. At the temperature as high as 500 °C, the textured sample still maintains excellent electrical properties of d₃₃ = 24.2 pC/N, tanδ = 9.9% and ρ = 2.7 × 10⁶ Ω·cm, suggesting that the textured CaBi₄Ti₄O₁₅ ceramics could be a potential candidate for high-temperature piezoelectric sensor or detector applications.