原位复合钛酸铅/镍(铅)铁氧体复相粉体的制备研究

利用sol-gel法并通过原位复合方法制备了具有铁电性能的PbTiO3和具有铁磁性能的NiFe2O4和PbF12O19多相复合体系陶瓷粉体。利用XRD、SEM对多相复合体系的物相结构和形貌等进行研究。结果表明，在700℃以上则形成铁电（PbTiO3）/（NiFe2O4和PbF12O19）三相复合体系。热处理温度对多相复合体系晶相的形成和生长产生关键性作用，多相复合共存体系中形成的晶相多以固溶体存在，各固溶晶相的晶格常数随固溶量的不同而不同。     

锆钛酸铅95/5纳米粉体Sol-Gel法制备与改进

以醋酸铅、硝酸锆、钛酸丁酯为原料,改进溶胶-凝胶法,制备得到锆钛酸铅95/5纳米粉体.改进溶胶-凝胶法省去溶胶加水、凝胶干燥、干凝胶研磨等步骤,采用加热蒸馏溶胶制备凝胶,蒸馏回收溶剂并干燥凝胶,凝胶分段加热处理等方法,简化了加工工艺,大大缩短了合成周期,降低了成本.XRD和TEM分析表明,用改进sol-gel法制备得到的PZT粉体煅烧温度低、晶粒细小、均匀,直径约10nm.     

等离子喷涂六钛酸钾涂层工艺研究

为了探索六钛酸钾热障涂层的制备工艺,通过正交试验分析方法,采用等离子喷涂工艺制备了钛酸钾热障涂层.研究了喷涂工艺对涂层物相结构的影响,采用定量金相分析了涂层组织.结果表明:喷涂工艺对涂层的物相结构有显著影响,随喷涂工艺的改变,涂层由类似于八钛酸钾的某种结构转变为以六钛酸钾结构为主的相结构;涂层孔隙分布均匀,孔隙率在10%左右.     

用Sol-Gel法在PC上制备有机-无机复合耐磨涂层

用ｓｏｌ－ｇｅｌ法在聚碳酸酯ＰＣ上制备一层耐磨涂层。该涂层为有机－无机复合网络,由γ—缩水甘油醚氧丙基三甲氧基硅烷（γ—ＧＰＴＭＳ）和金属醇盐Ｔｉ（ＯＣ２Ｈ５）４合成。采用浸涂工艺,热固化后可得到几微米厚的透明涂层。用３—氨丙基三乙氧基硅烷（３—ＡＰＳ）对ＰＣ表面进行处理,可使涂层与基体的结合力大大提高。涂层的基本骨架由Ｓｉ－Ｏ－Ｔｉ组成,能显著改善ＰＣ材料的耐磨性能。     

钛酸铅和锆钛酸铅铁电薄膜的热释电效应的研究

本文测量了钛酸铅和锆钛酸铅铁电薄膜的热释电效应，在这些以钛薄片为衬底，用Ｓｏｌ－Ｇｅｌ方法制备的铁电薄膜上可测到明显的热释电响应，同时，对这些薄膜的牡民Ｉ－Ｖ特性也进行了测试，对敏感元工之间的热传导以及材料中发现的光效应对热释电响应的影响进行了分析和讨论。     

高温钛酸铅钡PTCR陶瓷制备中铅的挥发与抑制

通过理论分析，提出了在ＢａＴｉＯ３中掺入ＰｂＴｉＯ３而不是按传统掺入ＰｂＯ或Ｐｂ３Ｏ４采用敝开式烧结工艺便可有效地减少烧结过程中Ｐｂ成分的损失。实验结果表明效果极好，同时表明Ｐｂ元素对居里温度的移动效率随Ｐｂ总含量而明显变化，在铅含量较低时，可获得比通常文献报导的高得多的值。本文阐述了这些规律，并作出了理论解释。     

不锈钢衬底上锆钛酸铅膜的制备

以改性二氧化锆为过渡层,用溶胶－凝胶法在不锈钢衬底上成功制备了锆钛比为52／48的锆钛酸铅膜,扫描电镜分析表明,膜的表面平整,无裂纹,X射线分析结果说明,经650℃退火30min后,膜为纯的钙钛矿相,以衬底为下电极、直径为0.32mm的金上电极,测量了0.8μm膜的电滞回线及其它性能,膜的剩余极化为18μC/cm^2。     

离子注入对钛酸铅膜结构的影响

我们用Sol-Gel法制备了非晶钛酸铅膜。研究了各种温度下离子注入对其结构的影响。发现注入温度较低时,铅在非晶钛酸铅膜中聚集并结晶;当注入温度较高时,离子注入阻碍晶态钛酸铅的形成而使膜中出现晶态铅和氧化铅。     

PLD制备钛酸铅薄膜过程的RHEED分析

本文采用反射式高能电子衍射(RHEED)监测脉冲激光沉积法制备钛酸铅薄膜过程.根据PbTiO3/MgO(001)薄膜、PbTiO3/Si(100)薄膜生长过程中RHEED强度的时间演变,分析基片对薄膜生长模式的影响.并且观测不同生长时刻的RHEED强度的空间分布,讨论生长过程中薄膜表面的台阶尺寸变化.另外,比较在不同氧分压下沉积的钛酸铅薄膜表面的RHEED图案,发现氧气将改变薄膜的微结构,提高薄膜的结晶性.     

钛酸铅陶瓷的快速制备及电性能研究

针对传统的Slo-gel法制备钛酸铅铁电陶瓷水解速率慢、烧结温度高、制备周期长等不足，首次采用在溶胶中直接加甲醇水溶液水解和新鲜凝胶直接烧结的方法，实现了钛酸铅纳米晶的快速合成。用TEM观察了钛酸铅纳米晶的形貌和尺寸，用XRD法测定了钛酸铅纳米晶的结构，并制得纯度高、致密性好的钛酸铅纳米陶瓷，对其介电、铁电和热释电性能进行了初步研究。研究表明，用改进的Sol-gel法制备的钛酸铅陶瓷仍保持其优良的介电性能和铁电性能。     

改进的sol-gel工艺制备细晶Ba0.6Sr0.4TiO3陶瓷及其介电性能的研究

用改进的sol-gel工艺制备了细晶钛酸锶钡(Ba0.6Sr0.4TiO3,BST)陶瓷块体,研究了BST陶瓷的结晶与介电性能.在这种改进sol-gel的工艺中,用传统的固相反应煅烧形成BST粉体,经高能球磨制备BST纳米陶瓷粉体,再将一定质量的纳米粉体加入到相同化学组成的BST的溶胶液中,经普球球磨12h后,制备成悬浮性好,分散均匀的浆料.浆料可用来制备BST陶瓷,并在1200℃保温2h烧结成瓷,结果显示,BST陶瓷块体结构致密,晶粒尺寸在0.15～2μm之间.分析了样品的介电性能和晶粒尺寸对材料介电性能的影响.介电温谱显示,在0℃,100kHz时,相对介电常数为2500,介电损耗为0.02;并且存在明显的弥散相变.     

一种无机包覆钛酸钾晶须的新方法

利用乙酸乙酯作为均匀沉淀剂在钛酸钾晶须表面成功包覆了SiO2 无机层。利用SEM、FTIR、XRD、EDX等手段对钛酸钾晶须表面包覆层进行了表征和定量分析,并利用Zeta电位仪测试了包覆前后钛酸钾晶须的表面电荷情况。结果表明钛酸钾晶须表面形成了无机SiO2 层,并与晶须表面有一定的相互作用;包覆后晶须表面性质接近于SiO2,有助于钛酸钾晶须进一步表面偶联处理。     

Wafer scale lead zirconate titanate film preparation by sol-gel method using stress balance layer

In this paper, platinum/titanium (Pt/Ti) film was introduced as a residual stress balance layer into wafer scale thick lead zirconate titanate (PZT) film fabrication by sol-gel method. The stress developing in PZT film's bottom electrode as well as in PZT film itself during deposition were analyzed; the wafer curvatures, PZT crystallizations and PZT electric properties before and after using Pt/Ti stress balance layer were studied and compared. It was found that this layer is effective to balance the residual stress in PZT film's bottom electrode induced by thermal expansion coefficient mismatch and Ti diffusion, thus can notably reduce the curvature of 4-in. wafer from − 40.5 μm to − 12.9 μm after PZT film deposition. This stress balance layer was also found effective to avoid the PZT film cracking even when annealed by rapid thermal annealing with heating-rate up to 10.5 °C/s. According to X-ray diffraction analysis and electric properties characterization, crack-free uniform 1-μm-thick PZT film with preferred pervoskite (001) orientation, excellent dielectric constant, as high as 1310, and excellent remanent polarization, as high as 39.8 μC/cm², can be obtained on 4-in. wafer.     

Structural evaluation of sol-gel derived lead strontium titanate diffusion barrier for integration in lead zirconate titanate transducer design

Sol-gel derived Pb₄₀Sr₆₀TiO₃ (PST) thin film has been investigated as a diffusion barrier for integrating in PbZr₃₀Ti₇₀O₃ (PZT) device structures on Si substrates. PST film was deposited on SiO₂/Si substrate and annealed at a relatively low temperature range of 550-600 °C producing a crack-free, smooth and textured surface. Following deposition on PST/SiO₂/Si template PZT thin film was crystallised exhibiting random grain orientations and an insertion of the bottom Pt/Ti electrode forming PZT/Pt/Ti/PST/SiO₂/Si stacks promoted the preferred PZT (111) perovskite phase. PZT (111) peak intensity gradually decreased along with slight increase of the PZT (110) peak with increasing annealing temperature of the buffer PST film. The dielectric and ferroelectric properties of the PZT with barrier PST deposited at 550 °C were assessed. The dielectric constant and loss factor were estimated as 390 and 0.034 at 100 kHz respectively and the remnant polarisation was 28 µC/cm² at 19 V. The performance of the PZT/PST device structures was compared to similar PZT transducer stacks having widely used barrier TiO₂ layer.     

V2O5溶胶-凝胶涂膜法及涂膜性能分析

以V2O5溶胶凝胶为原料,采用旋涂法、浸涂法、喷涂法和刷涂法在各种衬底上涂制V2O5薄膜。对4种涂膜方法以及胶体性能对涂膜的影响进行了分析;给出了薄膜厚度与主要影响因素之间的关系。     

苎麻纤维和钛酸钾晶须混杂增强聚丙稀车用材料的研制

为了考察苎麻纤维和钛酸钾晶须混杂增强聚丙稀时的行为特征,采用正交实验设计、转矩流变仪共混和传递模压成型技术研制了苎麻和钛酸钾晶须混杂增强聚丙稀复合材料,并通过方差和极差分析方法对材料的强度和韧性指标进行了研究.结果表明:苎麻和钛酸钾晶须能有效提高聚丙稀的力学性能;在本试验范围内,要提高PP的综合力学性能,晶须含量要求适中,苎麻越多越好且宜选用硅烷偶联剂进行处理;用正交试验法可有效进行聚丙稀多元复合材料的研制工作.     

钕掺杂锆钛酸铅纳米粉体的溶胶-凝胶法合成研究

以乙二醇为溶剂,硝酸钕为钕源,采用改进的溶胶-凝胶法制备了钕掺杂锆钛酸铅纳米粉体Pb1-3x/2NdxZr0.52Ti0.48O3(PNZT).通过FTIR、XRD、TG-DTA讨论了溶胶经热处理制备纳米粉体的反应机理,PNZT的热处理温度较PZT高50～100℃.采用XRD、SEM、TEM对纳米粉体进行表征.研究表明,钕掺杂增加了晶格畸变程度.与PZT相比,随着钕掺杂量增加晶格参数a和V下降,而参数c和c/a则不同,少量钕掺杂导致参数c和c/a增加,随着钕掺杂量增加逐渐下降.当钕掺杂量≤9%(摩尔分数)时可生成粒径约为20～50nm的钙钛矿型粉体, Nd3 离子取代Pb2 离子与Ti4 离子、O2 离子形成稳定的钙钛矿型结构.     

采用溶胶-凝胶法在刀具表面制备MoS2软涂层的研究

在成功地采用柠檬酸溶胶-凝胶法在硬质合金试样表面制备出MoS2软涂层的基础上,采用扫描电镜形貌观察和摩擦系数测定等实验方法研究了MoS2加入量对涂层表面微观形貌及其摩擦性能的影响规律。结果表明,采用溶胶-凝胶法在1.6mol/L柠檬酸水溶液中分别添加13、20和27g/L MoS2粉末条件下,应用刷涂法均可以在硬质合金试样表面得到与基体结合牢固、表面质量较高的MoS2软涂层。所获得的MoS2软涂层的表面形貌呈片状。MoS2软涂层的存在明显地降低了硬质合金试样的摩擦系数,由硬质合金试样的0.58～0.86降低到软涂层的0.18～0.23。而具有不同MoS2加入量的软涂层间的摩擦系数相差不大。软涂层试样的摩擦系数明显低于硬质合金试样的原因与涂层中存在有摩擦系数低、承载力大等优良性能的MoS2以及软涂层的存在改变了原摩擦副材料间的性质等因素有关。     

Millimetre-sized hollow spheres of lead zirconate titanate by a sol-gel method

Hollow spheres of lead zirconate titanate (PZT) [chemical formula Pb(Zr_0.52Ti_0.48)O₃)], with outer diameter of 1–2 mm and a wall thickness of about 100 m, were fabricated by gellation of a PZT sol inside solid polymer spheres and then burning the polymer out. Monomodally sized polyacrylamide spheres, with diameter 1.40–1.90 mm, were soaked in a PZT sol, prepared by dissolving Pb(NO₃)₂, zirconiumn-butoxide and titanium isopropoxide inN, N-dimethylformamide. The absorbed sol was then gelled beneath the surface of the polymer sphere by the action of NH₃. Upon calcination of the spheres at 850 °C for 4 h in air, hollow spheres of pure PZT perovskite phase (as identified by X-ray diffraction patterns) were obtained. The density of the hollow spheres was 1.13gcm^–3, while that of the wall of the spheres was 3.10g cm^–3. The scanning electron microscopic examination of the broken spheres showed that the inner surface of the spheres contained rib-like structures, which provided strength to the hollow spheres. The planar coupling factor,k _p, of six hollow spheres, placed at a close-packed arrangement in a plane, was 0.22, indicating the possibility of fabrication of low-density transducer arrays.     

BaFe12O19铁氧体磁性涂层碳纤维研制

提出用ｓｏｌ－ｇｅｌ技术在碳纤维表面涂覆ＢａＦｅ１２Ｏ１９型铁氧体,制得磁性涂 连续碳纤维,利用红外吸收光谱鉴别了钡铁氧体的合成,并对纤维的磁性进行了初步理论分析。