Separated multi clad-layer stripe-geometry GaAlAs DH laser

The fabrication process, the analysis of the waveguiding property, and the lasing characteristics of a separated multiclad-layer (SML) stripe-geometry laser for a 0.8 μm wavelength are described. The SML stripe geometry enables us to grow at 820°C a flat active layer without deformation of the shape of the grow by melt-etching. The analysis shows that the built-in waveguide is the effective refractive index step waveguide, in contrast to the loss step waveguide of the CSP laser, and we can fabricate a laser with small stripewidth. The fundamental transverse and longitudinal single-mode lasing were obtained with CW threshold current of 45-70 mA for the stripewidth3-6 mum. The damped relaxation oscillation and the small spectral broadening when modulated by 400 Mbits/s RZ random pulses were obtained. A small increase rate of the driving current when operated at 50°C with 5 mW/facet output was confirmed.     

Waveguide lasers operating at 1084 nm in neodymium-diffused lithiumniobate

The authors report the demonstration of waveguide lasers in lithium niobate into which the active element neodymium has been introduced by thermal diffusion. The waveguides were fabricated using conventional Ti indiffusion and optical feedback was provided by the polished endfaces alone. The absorbed power threshold of one waveguide laser was estimated at 13±3 mW for pumping at 814 nm, and its slope efficiency in terms of total lasing output as a function of absorbed pump power was estimated to be 55±8%. Laser output powers in excess of 100 mW were observed     

基于氮化镓的通信波段可调DFB激光器的研究

为了利用悬空的周期可调光栅控制激光器的波长输出,采用了微机电系统技术中微驱动器与分布反馈激光器光栅相结合的结构,根据严格耦合波理论和介质平板波导理论,针对光通信的C波段,利用有限元软件COMSOL,建立了基于氮化镓的波长可调分布反馈激光器2维稳态模型。分析了1550nm处2维电场模式图以及激射波长线宽图,得到了激射波长与光栅周期的对应关系。结果表明,在光栅厚度、高度以及增益层厚度等结构参量一定的情况下,激射波长与光栅周期呈现与理论分析基本一致的似线性关系。该研究为该器件设计以及制备的后期工作开展提供了理论指导意义。     

一种新颖的自反馈光注入单频窄线宽光纤激光器

报道一种基于自反馈光注入的单频窄线宽光纤激光器。激光器采用线形腔结构,用高掺杂Er3+光纤作为增益介质,利用输出信号光分束反馈与腔内振荡激光干涉,形成折射率光栅与增益光栅共同作用选择纵模,获得稳定的1 549.85 nm单频窄线宽激光输出。在975 nm单模激光二极管(LD)抽运下,激光器的抽运阈值光功率为13 mW。当抽运光功率为112 mW时,最大输出信号光功率为30.6 mW,对应的光-光转换效率为27.3%,斜率效率为30.2%,信噪比大于50 dB。采用延时自外差方法测量线宽,当使用30 km单模光纤延迟线时,测量得到激光器的3 dB线宽为4.0 kHz。     

工作在L波段的多波长Er3 /Yb3 共掺光纤激光器

采用Er^3 ／Yb^3 共掺双包层光纤(EYDF)作为增益介质，利用一段标准的多模光纤作为空间梳状滤波器，于室温下实现了5个波长的稳定输出。通过调节偏振控制器的状态，可以实现对波长振荡个数和波长间隔的控制。腔中不加任何的稳定装置，在激光输出功率高于207mw时，仍能够得到多波长的稳定振荡，单一波长的线宽窄于0．15nm，边模抑制比大于32dB。通过优化单模光纤与多模光纤的熔接，选择更加合适的多模光纤，可实现更多波长个数的稳定的多波长输出。     

The onset of coherence collapse in DBR lasers

A study of the dependence of the onset of coherence collapse on laser output power is discussed. Three-section multiquantum-well-distributed-Bragg-reflector (MQW-DBR) lasers were used. The fraction of light reflected back into the lasing mode was varied, and the point at which the transition to coherence collapse occurred was measured. This feedback level varies approximately linearly with laser output power. For these lasers, when the output power is 1 mW, the transition to coherence collapse begins when the optical feedback into the lasing mode is below -40 dBm; when the feedback power is -35 dBm, the laser line is completely collapsed     

High performance superluminescent diodes at 1.3μm wavelength

The design,fabrication and performance of 1.3цm superluminescent diodes are reported.A InP window structure and a passive absorber waveguide in different plane are applied to suppress lasing oscillation.A buried crescent structure similar to a laser diode is introduced to achieve high output power.The output power of about 700цW is coupled into a single-mode fiber at 150mA and 25℃.Spectrum width is more than 30nm.The devices operate in superluminescent state in the range from0℃to 60℃.     

Analysis of Relaxation Oscillations and Gain Switching of Unidirectional Erbium-Doped Waveguide Ring Lasers

Relaxation oscillations and gain switching of erbium-doped waveguide ring lasers (EDWRLs) are studied using numerical simulations based on time-dependent rate-propagation equations. The counter-directional wave suppression is analyzed for different waveguide ring cavity configurations and pumping schemes. It is shown that the counter-directional wave suppression in unidirectional EDWRLs undergoes relaxation oscillations synchronously with oscillating power. It is also shown that the suppression in the first spike is maximal, so the gain switching technique provides the most favorable conditions for unidirectional lasing. Furthermore, for the one-end-pumped gain-switched EDWRL, highly unidirectional operation is possible with no intracavity elements included. In this case the counter-directional wave suppression considerably exceeds its steady-state value. The gain-switched suppression caused by intracavity elements is close to the steady-state value.      

Sol-gel ZnO-SiO/sub 2/ composite waveguide ultraviolet lasers

Random laser action with coherent feedback is realized in ZnO-SiO/sub 2/ composite films, which consists of ZnO clusters embedded in SiO/sub 2/ dielectric matrix prepared by sol-gel technique. The films are deposited on silicon substrate with a SiO/sub 2/ buffer layer to form a waveguide structure. Ultraviolet lasing at room temperature is observed from the composite films with ZnO : SiO/sub 2/ molar ratio varying between 1 : 5 and 1 : 30. The corresponding lasing wavelength and linewidth under 355-nm optical excitation are found to be /spl sim/388 nm and less than 0.6 nm, respectively. Our experiment has shown that the proper control of light confinement inside the random cavities leads to coherent random lasing.     

High-frequency broad-band signal generation using a semiconductor laser with a chaotic optical injection

Chaotic signals with a flat power spectrum over 20 GHz have been generated using two commercially available semiconductor lasers coupled in a unidirectional master-slave scheme. The master laser has an external optical feedback that induces optical chaos in the laser output. A part of the chaotic light output from the master laser is injected into the slave laser. We experimentally demonstrated the generation of broad-band signals up to 22 GHz using lasers whose relaxation oscillation frequency in the free-running state is only around 6.4 GHz. We also show that the experimental results can be well reproduced by numerical simulations using two coupled rate equations. The numerical investigation shows that the high-frequency broad-band signal generation is owing to two key effects: high-frequency oscillations as a result of beating between the master and slave laser lights, and spectrum flattening due to the injection of the chaotic signal. The flatness, stability, and tunability of the power spectra demonstrated in our experiments suggests that the proposed system can be potentially useful for generation of high-frequency broad-band random signals.     

Instability of coherence in semiconductor laser due to externalfeedback in hybrid-integrated optical waveguide components

The coherence instability of oscillation-frequency shift and spectrum-linewidth fluctuation of a distributed feedback (DFB) semiconductor laser due to reflected feedback from input or output facets in a butt-coupled waveguide device is theoretically analyzed. A low-loss butt-coupling method between a semiconductor laser and a waveguide device for hybrid-integrated optical components used in coherent optical-fiber systems is presented. The calculated results indicate that (1) the coherence instability of the DFB lasers is sensitive to external optical feedback, (2) feedback from the waveguide input facet affects the laser frequency and gain shifts, and (3) feedback from the output facet intensifies the linewidth fluctuations     

Multiwavelength erbium-doped fiber lasers with active overlapping linear cavities

Multiwavelength oscillations in erbium-doped fiber (EDF) lasers with active overlapping linear cavities are investigated in detail. The laser can be designed to produce multiwavelength oscillations in the C-band and in the L-band. With a C-band three-wavelength laser, experiments show that the output powers of the lasing lines increase linearly or piecewise linearly with pump input. Any one lasing wavelength can be tuned over several nanometers depending on the gain tilt in the vicinity of the lasing wavelength while multiwavelength oscillation is still being maintained. The output power of any specific lasing line can be adjusted by suitably designing the EDF sections. This property also allows the laser to operate in multiwavelength switching mode. The laser exhibits a novel multiwavelength optical bistable behavior in the L-band. With an L-band dual-wavelength laser, the bistable input-output hysteresis behaviors of the two L-band wavelengths evolve in antiphase with respect to each other. The width of the bistable region has been increased to several tens of mW. It can be controlled and adjusted by the cavity loss and the EDF length. It is found that simultaneous L-band dual-wavelength oscillations can be obtained when part of the EDF, which functions as a saturable absorber, has been bleached. Moreover, simultaneous multiwavelength oscillations in both C-band and L-band have also been successfully demonstrated with the laser.     

Anticompetition Between Laser Modes in Quantum-Dot Laser

Anticompetition behavior is observed in a InAs quantum-dot (QD) laser with external wavelength control. Unlike the competition behavior observed in other QD lasers, in this experiment, the laser emission induced by external feedback at the ground state wavelength improves the excited-state emission at 1170 nm by 13 dB. Such an anticompetition phenomenon is most obvious as the feedback wavelength differs from 1250 nm, the original lasing wavelength, by 15 nm. This anticompetition behavior is explained by the sharing of QDs between the laser emission induced by the feedback and the original laser oscillation     

Glass waveguide laser

A channel waveguide fabricated in a Nd³⁺-doped laser glass by the ion exchange method is discussed. The device was end-fire pumped by a diode-laser operating at 802 nm. Continuous-wave (CW) lasing was observed at 1054 nm, and maximum output power was higher than 150 mW. The large output power was achieved by increasing the radius of the waveguide     

Mode stabilization method for superstructure-grating DBR lasers

A wavelength stabilization method for widely tunable superstructure-grating (SSG) distributed Bragg reflector (DBR) laser is described. The output characteristics under tuning are studied theoretically and experimentally. It is found that peak reflectivity states, in which the lasing mode is just aligned with the reflection peaks of both DBR's, are obtained at saddle points in the output characteristics while changing the two SSG-DBR currents. Based on these results, a method for the Bragg frequency control of the two SSG-DBRs is proposed. The feedback control circuit keeps the lasing mode at a peak reflectivity state, and it suppresses mode hopping. Additionally, the oscillation mode is locked to arbitrary reference wavelengths of an optical filter. Stabilization at 200 GHz (1.6 nm)-spaced 16 wavelengths was achieved within the wide tuning range of the SSG-DBR laser. Control was maintained under a laser temperature variation of ±5°C as a result of the Bragg frequency control of the two DBR's     

A unidirectional room temperature multi-wavelength fiber ring laser without isolator

A simplified ring cavity for achieving a unidirectional room temperature multi-wavelength erbium-doped fiber ring laser without optical isolator is demonstrated. The fiber ring cavity is built in such a way that the optical fields propagating in two directions suffer different losses caused by one sampled fiber Bragg grating. Furthermore, simultaneous multi-wavelength lasing with 0.8-nm intervals is demonstrated with sinusoidal phase modulation just before the sampled fiber Bragg grating to prevent single-wavelength lasing and unstable wavelength oscillation.     

Integrated two-state AWG-based multiwavelength laser

An integrated InP-InGaAsP two-state coupled-laser device for use in optical packet switching and signal processing is presented. The two states are identified by distinct lasing wavelengths. Single-mode lasing occurs in both states and the contrast ratio between the two states is 35 dB. Switching between states with optical pulses is demonstrated. The use of an arrayed waveguide grating (AWG) and ring laser configuration permits monolithic integration without the need for cleaved facets. How the AWG can be used to obtain partial isolation between multiple interconnected devices is also discussed.     

1550 nm GaInNAsSb distributed feedback laser diodes on GaAs

Single mode laser diodes on GaAs substrates were developed using GalnNAsSb double quantum well active regions grown by molecular beam epitaxy. The distributed feedback devices were fabricated using a regrowth-free process in which lateral Cr gratings were deposited adjacent to a dry-etched narrow ridge waveguide. In continuous- wave (CW) operation the devices exhibit a lasing wavelength of 1550 nm at 10degC with a very high sidemode suppression ratio of > 50 dB throughout most of the operational range, and output power up to 15 mW.     

Transverse mode stabilized AlxGa1-xAs injection lasers with channeled-substrate-planar structure

A built-in passive waveguide mechanism is introduced in AlxGa1-xAs injection lasers by growing planar double heterostructure (DH) layers on a grooved GaAs substrate. The lasing mode is confined to the channel region due to excess absorption loss outside the channel. Stable fundamental mode oscillation is achieved up to twice the threshold current for a channel width of5-8 mu. Undesirable lasing behavior usually induced by transverse mode instability, such as nonlinear kinks in the light output versus current characteristics, are significantly reduced in the present lasers. The dc threshold current is 40-90 mA at room temperature. Median lifetime of 780 hours has been obtained during preliminary aging tests at a heat sink temperature of 70°C.     

Characteristics of a semiconductor laser with external feedback

The theoretical analysis of the compound cavity of a semiconductor laser with external optical feedback is conducted. For large optical feedback, the output power from the laser and its oscillation frequency differ from those for small optical feedback. From the rate equations of the compound cavity, the conditions of the laser oscillation are derived in the presence of large optical feedback The dependencies of the output power and the laser oscillation frequency on the external-cavity length are investigated. Some new results involving laser oscillation depending on the external-cavity length are presented. The experimental results are compared with theoretical predictions. The dependence of the laser oscillation on the external-cavity length is qualitatively explained in the present model