多孔Si光学干涉法生物传感器的研究

实验制备多孔Si材料作为传感器载体,通过H2O2浸泡的方法使其表面形成Si-OH键,然后对样品进行硅烷化处理。用戊二醛作为偶联剂,通过共价键偶联法将血管紧张素-Ⅱ(Ang-Ⅱ)抗体固定到多孔Si的孔洞中。分别滴加不同浓度的抗原使其发生反应,测量傅里叶变换红外谱(FT-IR)和加入抗体前后反射谱的变化,结果表明,硅烷化效果明显,生物抗原较好固定,抗原抗体反应前后反射谱有明显红移,且红移量于滴加抗原浓度增加而增加,并呈现抗原抗体浓度于红移量的非线性关系。     

一种多孔硅基导模共振滤波器的研究

提出了一种基于多孔硅的光栅导模共振滤波器,采用严格的耦合波理论分析方法,进行数值仿真并分析了多孔硅基导模共振滤波器的反射光谱特性.同时设计了工作在1550nm波长的窄带多孔硅硅基光栅滤波器的结构参数.研究结果表明,此滤波器具有非常高的反射率峰值,和边带抑制较高且带宽较窄的反射谱,是一种性能优异的光通信硅基滤波器件.     

多孔硅有效介电函数研究

采用改进过的Maxwell-Garnett模型研究了入射光波长和多孔硅的孔隙率对反射光谱和介电光谱的影响,结果表明:(1)随着入射光波长的增大,多孔硅的反射率先增大后减小,而随着孔隙率的增大反射光谱出现了明显的下塌趋势,且孔隙率越大下塌得越明显;(2)随着孔隙率的增加,多孔硅复介电光谱出现明显的蓝移现象,且多孔硅有效介电常数的实部和虚部均变小.此外还对这种现象给出了较为合理的解释.     

用光电流谱研究多孔硅微腔的光电特性

利用光电流谱对全硅基多孔硅微腔的吸收特性进行了研究 ,在光电流谱中观察到 λ1 =742 nm主峰 .同时也对多孔硅微腔的 PL 谱和单层多孔硅的光电流谱进行了测量 ,结合有效折射率方法和菲涅耳公式 ,对照 PL 谱和单层多孔硅的光电流谱 ,对常温下多孔硅微腔的光电流谱进行解释 .     

用光电流谱研究多孔硅微腔的光电特性

利用光电流谱对全硅基多孔硅微腔的吸收特性进行了研究,在光电流谱中观察到λ1=742nm主峰.同时也对多孔硅微腔的PL谱和单层多孔硅的光电流谱进行了测量,结合有效折射率方法和菲涅耳公式,对照PL谱和单层多孔硅的光电流谱,对常温下多孔硅微腔的光电流谱进行解释.     

多孔硅薄膜的纵向均匀性及其光学特性研究

多孔硅样品使用脉冲电化学腐蚀法经过不同的腐蚀时间制备完成,使用反射光谱、光致发光光谱和SEM对多孔硅薄膜的纵向均匀性以及其光学特性进行了研究,还详细研究了随腐蚀深度变化的折射率和光学厚度(n*d)等光学参数。实验表明：随着腐蚀深度的增加,多孔硅薄膜的平均折射率n降低,即多孔度变大;多孔硅薄膜的光学厚度的形成速度减小;同时,反射光谱表现更弱的干涉性,表明薄膜的均匀性和界面的平整性变差;另外,光致发光谱的强度微弱变强。     

通过脉冲腐蚀形成的多孔硅薄膜的径向微结构和光学特性研究

使用反射光谱、光致发光光谱和SEM研究了通过脉冲腐蚀形成的多孔硅薄膜的径向折射率、光学和物理厚度。详细分析了沿径向方向多孔硅薄膜的径向折射率(n)和光学厚度(nd)与腐蚀中心之间的关系。实验结果表明：随着远离腐蚀中心,SEM图像表明：多孔硅样品的物理厚度缓慢变小,在腐蚀边缘,在径向58μm距离里,薄膜的物理厚度从2.48μm减少到1.72μm;此外,径向折射率n增加,即多孔度变小,同时,反射光谱强度显示出干涉振荡减弱,这意味着多孔硅薄膜的均匀性和界面的平整度变坏。光致发光谱的包络线显示蓝移的趋势,显示纳米微粒的尺寸减少。多孔硅微腔被制备用来研究多孔硅膜的径向光学特性,结果证实：在腐蚀中心,多孔硅膜的均匀性比边缘好。     

多孔硅PL谱的影响因素分析

通过阳极氧化电化学方法制备了多孔硅,并在室温下对不同条件下制得的多孔硅光致发光谱(PL谱)进行系统的分析.结果表明,随着阳极电流密度、阳极化溶液浓度和时间的增大,多孔硅的PL谱峰将发生"蓝移",并且PL峰强也显著增加,但过大的电流密度、阳极化溶液浓度和时间将导致PL峰强下降.另外,还发现PL谱存在多峰结构,而多孔硅在空气中放置时间的延长将引起其PL的短波峰"蓝移"和强度下降,但对长波峰只引起强度减弱,并不影响其峰位.PL谱的多峰结构可以认为是由于样品中同时存在"树枝"状和"海绵"状两种微观结构所产生的,在这个假设下,用多孔硅氧化后发光中心从硅表面移到二氧化硅层及量子限制模型能够解释上述现象.     

多孔硅PL谱的影响因素分析

通过阳极氧化电化学方法制备了多孔硅,并在室温下对不同条件下制得的多孔硅光致发光谱(PL谱)进行系统的分析.结果表明,随着阳极电流密度、阳极化溶液浓度和时间的增大,多孔硅的PL谱峰将发生"蓝移",并且PL峰强也显著增加,但过大的电流密度、阳极化溶液浓度和时间将导致PL峰强下降.另外,还发现PL谱存在多峰结构,而多孔硅在空气中放置时间的延长将引起其PL的短波峰"蓝移"和强度下降,但对长波峰只引起强度减弱,并不影响其峰位.PL谱的多峰结构可以认为是由于样品中同时存在"树枝"状和"海绵"状两种微观结构所产生的,在这个假设下,用多孔硅氧化后发光中心从硅表面移到二氧化硅层及量子限制模型能够解释上述现象.     

硅基光子晶体热释电红外传感器衬底的研制

在借助光刻等微电子工艺手段的基础上,通过控制交替变换的阳极氧化电流成功地制备出了阵列化的多孔硅一维光子晶体,然后在其表面沉积了一层500 nm Si3N4用于改善其表面粗糙度,使该结构更好地应用于热释电红外传感器之中。通过傅里叶红外反射谱(FTIR)测试证明该样品有较好的光学反射性能,探索了将这种阵列化的多孔硅一维光子晶体应用于制备高性能红外热释电传感器衬底的可行性。     

Research on immunosensor based on porous silicon

Porous silicon is functionalized using thermal oxidation and silanization. The HYSA antibodies are immobilized to the porous surface in this paper. The changes in the reflection spectrum and photoluminescence spectrum are investigated when BSA are attached to the PS surface. The result shows that the luminescence peak of PS disappears. After the antigen- antibody reaction, the higher light emission is observed and the reflection spectrum also red shifts. Therefore, this research lays a foundation for the development of sensitive label-free optical immunosensor.     

Optical and electrical properties of porous silicon layer formed on the textured surface by electrochemical etching

Porous silicon (PS) layers were formed on textured crystalline silicon by electrochemical etching in HF-based electrolyte. Optical and electrical properties of the TMAH textured surfaces with PS formation are studied. Moreover, the influences of the initial structures and the anodizing time on the optical and electrical properties of the surfaces after PS formation are investigated. The results show that the TMAH textured surfaces with PS formation present a dramatic decrease of reflectance. The longer is the anodizing time, the lower is the reflectance. Moreover, an initial surface with bigger pyramids achieved lower reflectance in short wavelength range. A minimum reflectance of 3.86 % at 460 nm is achieved for a short anodizing time of 2 min. Furthermore, the reflectance spectrum of the sample, which was etched in 3 vol.% TMAH for 25 min and then anodized for 20 min, is extremely flat and lies between 3.67% and 6.15% in the wavelength range from 400 to 1040 nm. In addition, for a short anodizing time, a slight increase in the effective carrier lifetime is observed. Our results indicate that PS layers formed on a TMAH textured surface for a short anodization treatment can be used as both broadband antireflection coatings and passivation layers for the application in solar cells.     

Vapor Sensing Theoretical Study on Optical Microcavities

When the organic vapors absorbed to the surface of porous silicon（PS）, capillary condensation takes place due to the porous structure of the PS layer, accordingly resulting in the effective refractive index changing. For PS multi-layer microcavities, the different resonant peaks shift in the reflectivity spectrum of porous silicon microcavities（PSMs）. The optical sensing model is set up by applying Bruggeman effective medium approximation theory, capillary condensation process and transfer matrix theoretically analytical method of one-dimensional photonic crystals. At the same time, comprehensively researched on are the sensing characteristics of PSMs which are exposed to give concentration organic vapors. At last, made is the theoretical simulation for sensing model of the PSMs in case of saturation by using computer numerical calculation, and found is the linearity relation between the refractive index of organic solvent and the peak- shift. At the same time deduced is the peak-shift as a function of the concentration of ethanol vapors.     

Photoconductivity Characteristics of Porous Si^①

Al was evaporated on the surface of PS which was prepared by electrochemical anodization in HF solution to form a metal/PS/Si/Al junction.The photoconductivity spectrum and other features were measured which present that PS has a stronger visible photoconductivity effecdt,specially in orange-yellow region.An analysis and discussion were made on it accordingly.     

Photoconductivity Characteristics of Porous Si

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抽运饱和及信道间受激拉曼散射效应对反向抽运分布式光纤拉曼放大器增益谱的影响

在宽带密集波分复用 (DWDM )系统中 ,后向抽运分布式光纤拉曼放大器 (B DFRA)会引入在小信号条件下无需考虑的两种效应 :抽运饱和效应 (PS)使拉曼增益减小 ;拉曼放大使信道间受激拉曼散射 (SRS)效应增强 ,产生附加拉曼倾斜效应 (ART)。将后向抽运分布式光纤拉曼放大器的增益谱分解为拉曼抽运的放大作用和信道间受激拉曼散射效应产生的倾斜作用 ,通过对各种工作条件下实际后向抽运分布式光纤拉曼放大器增益谱的优化计算 ,研究了抽运饱和效应和附加拉曼倾斜效应对后向抽运分布式光纤拉曼放大器增益谱的影响。计算发现抽运饱和效应取决于信道输出功率 ,附加拉曼倾斜效应由信道输入功率和输出功率共同决定 ,进而通过抽运饱和效应和附加拉曼倾斜效应的大小可以将后向抽运分布式光纤拉曼放大器的工作条件划分为三个区域 ,并讨论了不同工作条件下后向抽运分布式光纤拉曼放大器的简化分析方法     

钝化多孔硅的光致发光

选用含有胺基的正丁胺 (CH3CH2 CH2 CH2 - NH2 )作碳源 ,采用射频辉光放电法制备碳膜对多孔硅进行碳膜钝化 ,其光致发光谱和存放实验表明 :正丁胺对多孔硅进行钝化是一种十分有效的多孔硅后处理途径 .研究了钝化多孔硅的光致发光谱随钝化温度和钝化时间的变化关系 ,其结果显示 :通过调节钝化条件可实现钝化多孔硅最大的发光效率和所需要的发光颜色     

无线通信中基于成本预测的频谱转换新型系统模型

In current researches on spectrum leasing, Common model and Property-right model are two main approaches to dynamic spectrum sharing. However, Common model does not consider the obligation of Primary System (PS) and is unfair to Secondary System (SS), while the cooperation based on Property-rights model has problems on its feasibility. This paper proposes a novel system model, in which a Cost-Prediction scheme for Spectrum Leasing (CPSL scheme) is designed to forecast the cost that PS would pay for leasing ...     

非制冷红外探测器多孔硅绝热层的研究

以多孔硅作为绝热层材料,采用超高真空对靶磁控溅射镀膜法,在多孔硅样品表面和硅基底表面沉积氧化钒薄膜。实验采用电化学腐蚀法制备多孔硅,利用场致发射扫描电子显微镜观测了孔隙率为50%,60%,70%三个多孔硅样品的微观形貌。利用显微喇曼光谱法测量其热导率,分别为8.16,7.28和0.624W/mK;利用纳米压入仪测量氧化钒薄膜的显微硬度和杨氏模量,测得沉积在孔隙率为50%,60%,70%的多孔硅基底上氧化钒薄膜的显微硬度分别为1.917,0.928和0.13GPa,杨氏模量分别为31.087,16.921和2.285GPa,而沉积在单晶硅基底的氧化钒薄膜的显微硬度和杨氏模量分别为10.919GPa和193.792GPa,并分析了微观结构差异对多孔硅绝热性能和机械性能的影响,为非制冷红外探测器的工艺制作过程提供一定的热学力学参数。     

多孔硅的微结构和喇曼光谱

多孔硅（ＰｏｒｏｕｓＳｉｌｉｃｏｎ）是晶体硅于氢氟酸溶液中在硅衬底上形成的多孔态的硅材料。ＰＳ可见光区的强烈光辐射使其成为世界范围的研究焦点。本文用电化学方法制得了ＰＳ结构，扫描电子显微镜（ＳＥＭ）的结果表明ＰＳ是一个硅的毫微结构量子线的网络，光致发光（ＰＬ）谱表明ＰＳ发可见红光，而喇曼光谱显示一个在５１６ｃｍ（－１）附近的非对称峰，说明ＰＳ是一种新型的硅材料。