单层聚对苯乙炔薄膜器件载流子的注入和传输

从实验事实出发 ,根据不同注入情形分析了载流子的注入和传输 ,数值计算了载流子注入时的电流 ,阐述了各种因素对所注入电流的影响 ,简单地介绍了所注入的载流子在输运过程中 ,其密度在各种注入情形下随聚对苯乙炔 ( PPV)薄膜厚度相应变化的大致图形     

Investigation of the effects of MoO_3 buffer layer on charge carrier injection and extraction by capacitance–voltage measurement

The effects of MoO3thin buffer layer on charge carrier injection and extraction in inverted configuration ITO/ZnO/MEH-PPV(poly(2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene))/MoO3(0,5 nm)/Ag hybrid solar cells are investigated by capacitance–voltage measurement under dark and light illumination conditions.The efficiency of charge carrier injection and extraction is enhanced by inserting 5 nm MoO3thin layer,resulting in better device performances.Charge carrier transport of the whole device is improved and the interface energy barrier is reduced by inserting 5 nm MoO3thin buffer layer.The device fill factor is increased from 54.1%to 57.5%after modifying 5 nm MoO3.Simulations and experimental results consistently show that in the forward voltage under dark,the device with the 5 nm MoO3thin layer modification generates larger value of capacitance than the device without MoO3layer.While under illumination,the device with the 5 nm MoO3layer generates smaller value of capacitance than the device without the 5 nm MoO3layer in the bias region of reverse and before the peak position of maximum capacitance(VCmax).The underlying mechanism of the MoO3anode buffer layer on device current density–voltage characteristics is discussed.     

有机发光器件中空穴注入对负电容的影响

对不同结构的有机发光器件(OLED)进行了电容-电压(C-V)特性测量,研究了不同空穴注入结构对OLED负电容的影响。结果表明,负电容的产生与OLED内部电场的分布有着密切的关系,负电容开始出现的频率与电压的平方根呈指数关系。与超薄的单层空穴注入层相比,掺杂的空穴注入层不仅能降低器件的驱动电压,而且其载流子传输特性和出现负电容时的初始电压对频率有着更强的依赖性。     

In-situ potential mapping of space charge layer in GaN nanowires under electrical field by off-axis electron holography

In situ potential mapping of space charge(SC) layer in a single Ga N nanowire(NW) contacted to the Au metal electrode has been conducted using off-axis electron holography in order to study the space distribution of SC layer under electric biases. Based on the phase image reconstructed from the complex hologram the electrostatic potential at the SC layer was clearly revealed; the SC width was estimated to be about 76 nm under zero bias condition. In order to study dynamic interrelation between the SC layer and bias conditions, the variation of the electrostatic potential due to change of the SC widths respond to the different bias conditions have also been examined. The measured SC layers are found to vary between68 nm and 91 nm, which correspond to the saturated SC layers at the Ga N-Au contact under the forward and reverse bias conditions, respectively. By plotting the square widths of the SC layer against the applied voltages, donor density of Ga N NWs was derived to be about 4.3*10~6cm~(-3). Our experiments demonstrate that in-situ electron holography under electric fi eld can be a useful method to investigate SC layers and donor density in single NW and other heterostructures.     

TPD的传输与发光性质

研究了三苯基二胺（TPD）在电致发光中的传输与发光性质。观察到真空积淀的TDP薄膜光谱的达维道夫（Davydov）劈裂,用原子力显微镜（AFM）比较了退火前后TPD薄膜的表面形貌,测定了退火后TPD单层EL器件所发射的光谱,分析了在双层EL器件中TPD的电荷传输作用,从而证明了双层界面上电子空穴的复合得到增强。     

倾斜磁场下感生单轴磁各向异性对静磁正向体波激发的影响

研究了在倾斜磁场下感生单轴磁各向异性对静磁正向体波激发的影响，并考虑了易磁化轴垂直和平行于磁性薄膜两种情形，数值计算表明，在适当的倾斜磁场下，掺铋钇铁石榴石薄膜中的感生单轴磁各向异性能够显著降低静磁正向体波的插入损耗，增加激发带宽，因此，在静磁波器件和以静磁波为基础的磁光器件中，使用具有感生单轴各向异性的磁性薄膜可以显著提高器件的性能。     

激子复合区随温度移动对OLED磁效应的影响

制备了DCM掺杂层靠近阴极的双发光层有机发光器件ITO/CuPc/NPB/Alq3（发射绿光）/Alq3：DCM（发射红光）/LiF/Al,并在不同温度下测量了该器件和无DCM掺杂的单发光层参考器件的磁电致发光（Magneto-ElectroLuminescence,MEL）和磁电导（Magneto-Conductance,MC）.在注入相同电流密度下,发现双发光层器件MEL的高场（B50mT）效应随温度降低呈现先减小后增大的非单调变化,这与单发光层参考器件的单调递增变化明显不同.同时测量了不同温度下的电致发光光谱,发现双发光层器件的533nm和600nm两个特征峰的强度随温度变化出现了此消彼长的现象,表明激子复合区域随温度变化发生了移动.通过分析工作温度对器件各发光层中的三重态激子对间相互作用及载流子迁移率的影响,对双发光层器件中MEL的高场效应随温度的非单调变化进行了定性解释.实验结果进一步验证了在单发光层器件中得到的有机磁效应高场变化的相关结论.     

MoO3掺杂有机半导体NPB光电性质研究

在典型有机空穴传输材料胺类衍生物NPB(N,N'-diphenyl-N,N'-bis(1-naphthyl) (1,1'-biphenyl)-4,4'diamine)中引入过渡金属氧化物MoO₃制备了只有空穴传输的单载流子器件.结果表明:MoO₃的引入明显提升了NPB的导电性能,在约2.0 V的外加电压下,100 nm厚纯NPB薄膜电流密度仅为1.28 mA/cm²,而同样厚度的掺杂薄膜NPB∶MoO₃ (50 wt.%)电流密度达到了2 530 mA/cm².同样掺杂比例的NPB∶MoO₃薄膜吸收谱显示位于500 nm附近存在既不同于NPB也不同于MoO₃的额外吸收峰,表明体系中产生了电荷转移复合物NPB^＋-MoO^-₃,从而产生了额外的空穴载流子,进而提升了掺杂体系的导电性能.进一步的荧光分析表明,MoO₃的引入对NPB自身荧光具有明显的猝灭作用.NPB∶MoO₃(30 wt.%)薄膜的荧光强度比纯NPB薄膜荧光强度降低了2个数量级,NPB∶MoO₃ (50 wt.%)掺杂薄膜的荧光强度降低为零.     

深蓝色OLED材料均三嗪衍生物的合成与表征

简要本文合成了三种均三嗪衍生物TPTPA、TITPA和TCTPA，并利用其在电学和光学特性，将其作为发光/电子传输层材料制作有机电致发光器件(OLEDs). 其中，TCTPA具有比TPTPA和TITPA更高的荧光量子产率(PL). 从TPTPA到TCTPA其最低未占据轨道能级(LUMO)逐渐减少，这说明了TCTPA由于其共轭结构的增大，具有更高的电子迁移率. 以TCTPA作为发光/电子传输层的无掺杂OLED器件，在20V时亮度达到最大值2 612 cd/m2，其最大亮度效率和最大功率效率分别为1.72 cd/A 和1.35 lm/W. 将Ir(PPy)3、PVK、PBD等化合物，分别掺杂到以TCTPA为发光/电子传输层的OLED器件中，均展示出比无掺杂器件更高的亮度及效率.     

Erasable electrostatic lithography for quantum components

Quantum electronic components--such as quantum antidots and one-dimensional channels--are usually defined from doped GaAs/AlGaAs heterostructures using electron-beam lithography or local oxidation by conductive atomic force microscopy. In both cases, lithography and measurement are performed in very different environments, so fabrication and test cycles can take several weeks. Here we describe a different lithographic technique, which we call erasable electrostatic lithography (EEL), where patterns of charge are drawn on the device surface with a negatively biased scanning probe in the same low-temperature high-vacuum environment used for measurement. The charge patterns locally deplete electrons from a subsurface two-dimensional electron system (2DES) to define working quantum components. Charge patterns are erased locally with the scanning probe biased positive or globally by illuminating the device with red light. We demonstrate and investigate EEL by drawing and erasing quantum antidots, then develop the technique to draw and tune high-quality one-dimensional channels. The quantum components are imaged using scanned gate microscopy. A technique similar to EEL has been reported previously, where tip-induced charging of the surface or donor layer was used to locally perturb a 2DES before charge accumulation imaging.     

吖啶黄、碱性藏花红、罗丹明类染料间的能量转移

应用Forster理论,对碱性荧光染料吖啶黄(AY)、碱性藏花红(ST)、罗丹明6G(R6G)、罗丹明B(RB)、乙基罗丹明B(ERB)、丁基罗丹明B(BRB)组成的各种染料混合体系的能量转移进行了研究.结果表明:在十二烷基苯磺酸钠水溶液中,AY分别与R6G,ST;R6G分别与RB,ERB,BRB间均能发生有效能量转移.研究了各种表面活性剂对碱性阳离子染料间能量转移的影响,结果表明:只有强极性的阴离子表面活性剂才能使碱性阳离子染料间发生有效能量转移.转移效率既与给体量子产率有关,又与受体量子产率有关,受体量子产率高的转移效果好;同类染料间的转移效果不如不同类染料间的转移效果好.     

高质透明ZnO/金刚石异质结的制备

介绍一种高质透明异质结的表征与制备方法. 该异质结首先在金刚石单晶表面制备出p型金刚石单晶薄膜, 然后在其上制备高取向ZnO薄膜, 构成n型区. 系统测试结果表明, 当p\|n结正向偏压达到2.5 V时, 电流密度为109 A/m2, 启动电压为0.72 V, 与期待值一致. 良好的整流特性以及在可见光范围内的透明特性在该元件中得以实现.      

Improved performance of GaN-based light-emitting diodes by using short-period superlattice structures

An InGaN/GaN multiple-quantum-well (MQW) light-emitting diode (LED) with a ten-period i (undoped) -InGaN/p (Mg doped) -GaN (2.5 nm/5.0 nm) superlattice (SL) structure, was fabricated. This SL structure that can be regarded as a confinemen t layer of holes to enhance the hole injection efficiency is inse rted between MQW and p-GaN layers. The studied LED device exhibits better current spreading performance and an improved quality, compared with a conventional one without SL structure. Due to the reduced contact resistance as well as more uniformity of carrier s injection, the operation voltage at 20 mA is decreased from 3.32 to 3.14 V. A remarkably reduced reverse-biased leakage current (10^-7?10^-9 A) and higher endurance of the reverse current pulse are found. The measured output power and external quantum efficiency (EQE) of the studied LED are 13.6 mW and 24.8%, respectively. In addition, significant enhancement of 25.4% in output power as well as increment of 5% in EQE for the studied devices is observed, as the studied devices show s uperior current spreading ability and reduction in dislocations offered by the SL structure.     

Au/(C/SiO2)/p-Si结构中的电流输运机理研究

采用射频磁控溅射方法制备了镶嵌纳米碳粒的SiO2薄膜，利用Au／（C／SiO2）／p-Si结构的I-V特性曲线，对其电流输运机理进行了分析．结果表明，正向偏压较小时，薄膜中的电流符合欧姆电流输运机制；正向偏压较大时，薄膜中的电流主要是Schottky发射和Frenkel-Poole发射2种电流输运机制的共同作用结果．这一结论与样品的EL（electroluminescence）是由SiO2中的发光中心引起的结论相一致．     

可溶性聚合物薄膜发光器件的电致发光

采用脱氯化氢反应合成出氯仿可溶性的ＭＥＨ－ＰＰＶ聚合物,用ＭＥＨ－ＰＰＶ作为发光材料制备了单层结构ＩＴＯ／ＭＥＨ－ＰＰＶ／Ａｌ和双层结构ＩＴＯ／ＭＥＨ－ＰＰＶ／Ａｌｑ３／Ａｌ电致发光器件,测量了器件的电致发光谱、Ｉ－Ｖ特性和Ｂ－Ｖ特性,利用能级理论分析了器件的发光特性了随器件结构的不同所具有的规律,实验表明,单层结构器件和双层结构器件的发光出现在ＭＥＨ－ＰＰＶ层,当加入Ａｌｑ３电子传输层／空穴阻挡     

Detection of doubled shot noise in short normal-metal/superconductor junctions

Shot noise refers to the fluctuations in electrical current through a device arising from the discrete nature of the charge-carrying particles. Recent experiments have exploited the fact that the shot noise is proportional to the charge of the carriers to establish fractional quantization of quasiparticles in the fractional quantum Hall effect. By a similar argument, it is expected that when a superconducting reservoir emits Cooper pairs, (which have a charge twice that of an electron) into a short normal-metal wire, the shot noise should be double that obtained for a normal-metal reservoir. Although the charge of Cooper pairs has been well established by flux quantization and tunnel experiments, doubling of their shot noise has not yet been observed. Here we report a shot-noise experiment using a short diffusive normal-metal superconductor contact, in which we confirm the predicted noise behaviour for double charges. The measurements, taken over a large range of bias current, establish that phase coherence is not required to observe the effect.     

光折变液晶系统的表面电荷调制模型

为了研究载流子的注入对液晶盒中电压的影响,构建了光折变液晶系统中表面电荷调制的载流子注入模型。在外加直流电场的作用下,液晶中的载流子向表面聚集,形成界面双电层。该双电层屏蔽了大部分的外加电场,使外加电压基本上都降落在界面双电层上。非均匀光照射时,在光亮区,来自于ITO电极的电荷将越过界面,产生载流子复合。而处于暗区的表面电荷密度基本保持不变,界面电荷层继续屏蔽外加电场,在液晶体内形成了与光强空间分布相对应的空间电荷场。基于以上模型,给出了界面附近的载流子和电场的动态演化过程,理论分析与已有的实验结果非常吻合。     

Si3N4和Si3N4／Sio2驻极体薄膜的化学表面修正

采用补偿法对六甲基二硅胺烷（ｈｅｘａｍｅｔｈｙｅｄｉｓｉｌａｎｅ,ＨＭＤＳ）和二氯二甲基硅烷（ｄｉｃｈｌｏｒｏｄｉｍｅｔｈ ｓｉｌｉａｎｅ,ＤＣＤＭＳ）有面修正恒压电晕充电硅基氮化硅（Ｓｉ３Ｎ４）薄膜驻极体及氮化硅／二氧化硅（Ｓｉ３Ｎ４／ＳｉＯ２）薄膜驻极体的电荷储存稳定性进行了比较性的研究。实验结果表明,经过化学表面修正后,驻极体薄膜在高湿环境中的电荷储存稳定性显著提高;在低于２００℃时,ＨＭＤ     

空穴阻挡层BCP对掺杂型有机发光二极管中磁电导效应的影响

通过在器件复合发光区附近插入空穴阻挡层BCP,制备了一种具有非平衡传输性能的荧光染料掺杂型发光二极管,其结构为ITO／CuPc／NPB／NPB：DCM（5wt％）／BCP／Alq3／LiF／Al,并在不同温度和电压下测量了器件的注入电流随外加磁场的变化（即磁电导效应）．实验结果表现为：当磁场处在0～40mT时,该非平衡发光器件的磁电导随磁场的增加而迅速增大（即表现为快变的正磁电导效应）．这一实验现象与具有相对平衡传输性能的发光器件中所观测到的磁电导效应一致;当磁场大于40mT时,非平衡发光器件的磁电导随磁场的进一步增加表现为缓慢下降（即缓变的负磁电导效应成分）,而平衡器件的磁电导则变为继续缓慢增加（即为缓变的正磁电导效应）．本文对非平衡传输掺杂型发光器件的体系特征进行了讨论,并基于三重态激子-电荷（T-Q）反应受外加磁场的影响对上述实验现象进行了定性解释．     

Structural and Chemical Diversity of Tl－Based Cuprate Superconductors

The Tl-based cuprate superconductor family is the largest family in crystal structure and chemical composition among all high Tc cuprate superconductors. The Tl family can be divided into two sub-families, the Tl single layer family and the Tl double layer family, based on their crystal structural characteristics. The Tl single layer family is an ideal material for investigating the evolution of crystalline formation, charge carrier density, chemical composition, transport properties, superconductivity and their relationships. The Tl family contains almost all possible crystal structures discovered in high-Tc cuprate superconductors. Tl cuprate superconductors are of great importance not only in studying high-temperature superconductivity but also in commercial applications.