软膜紫外光固化纳米压印中Amonil光刻胶的刻蚀参数优化(英文)

报道了反应离子刻蚀转移图形过程中对Amonil光刻胶的刻蚀参数优化的结果.利用软膜紫外光固化纳米压印技术,首先制备了线宽/间距均为200 nm的纳米光栅结构.然后采用反应离子刻蚀的方法去除残留的Amonil光刻胶.研究了不同的气体组成、射频功率、压强和气体流量对刻蚀形貌、表面粗糙度以及刻蚀速度的影响.在优化的工艺条件下,获得了理想的具有垂直侧壁形貌和较小表面粗糙度的纳米光栅阵列.结果表明,选择优化的刻蚀工艺参数,既能有效地改善图形转移的性能,同时也能提高所制备结构的光学应用特性.     

感应耦合等离子刻蚀InP工艺

采用Cl2/CH4/N2感应耦合等离子体对InP进行了刻蚀.系统地讨论了RF功率、ICP功率、反应腔压力、气体流量等工艺参数对InP材料端面刻蚀的影响.通过优化工艺参数,获得了光滑垂直的InP刻蚀端面,刻蚀速率达到841 nm/min,与SiO2的选择比达到15:1.     

C_(4)F_(6)/SF_(6)混合气体对硅基材料的ICP刻蚀工艺研究北大核心CSCD

为避免深硅刻蚀工艺所引起的扇贝纹效应,同时减少其工艺气体所带来的温室效应,本文将新一代环保电子刻蚀气C4F6引入硅刻蚀工艺,采用刻蚀与钝化同步进行的伪Bosch工艺刻蚀硅槽孔。研究了ICP功率、RIE功率、腔体压强和C_(4)F_(6)/SF_(6)气体流量比对刻蚀速率、光刻胶/硅刻蚀选择比及刻蚀形貌的影响。结果表明,一定程度增加ICP功率和RIE功率可分别提高等离子体密度和物理轰击刻蚀作用;腔体压强对粒子平均自由径有较大影响;而C4F6流量的增加可加强刻蚀侧壁保护机制。通过综合优化工艺参数,获得了2.8μm/min硅刻蚀速率,3.1的光刻胶/硅刻蚀选择比和侧壁平坦,表面光滑,垂直度高的刻蚀形貌。     

氦离子辐照下钨纳米丝的自保护行为

采用低能量(200 eV)大流强的He⁺辐照多晶钨材料,辐照温度为1023 K和1373 K,辐照剂量为1.0×10²⁵~1.0×10²⁶ ions/m²。用称重、扫描电子显微镜、导电原子力显微镜等手段分析辐照后钨材料的质量损失、表面形貌和内表面缺陷分布,研究了刻蚀速率与表面形貌的关系。结果表明,具有粗糙钨纳米丝表面的钨样品刻蚀速率只有平滑表面的30%。其原因是,在大流强He⁺辐照下钨表面纳米丝的形成阻碍钨原子的溅射。这也意味着,钨纳米丝表面的形成可作为钨材料的自保护结构层,抑制ITER相关辐照下的强刻蚀。     

新型相变材料Ti0.5Sb2Te3刻蚀工艺及其机理研究

采用CF4和Ar混合气体研究了新型相变材料Ti0.5Sb2Te3(TST)的刻蚀特性,重点优化和研究了刻蚀气体总流速、CF4/Ar的比例、压力和功率等工艺参数对刻蚀形貌的影响。结果表明,当气体总流量为50 sccm、CF4浓度为26%﹑刻蚀功率为400 W和刻蚀压力为13.3 Pa时,刻蚀速度达到126 nm/min,TST薄膜刻蚀图形侧壁平整而且垂直度好(接近90°)﹑刻蚀表面平整(RMS为0.82 nm)以及刻蚀的片内均匀性等都非常好。     

4H-SiC在Cl2+Ar混合气体中的ICP刻蚀工艺研究

采用C12＋Ar作为刻蚀气体进行了单晶4H-SiC材料的感应耦合等离子体（ICP）刻蚀工艺研究，分析了气体流量、气体混合比、反应室压力、1CP功率等工艺参数对刻蚀速率和刻蚀质量的影响．得到的最大蚀速率为194nm/min，表面均方根粗糙度为1．237nm，Cl／Si原子浓度比约为0．97％：99．3％。     

单晶铌酸锂薄膜光波导的制备研究

为了优化单晶铌酸锂薄膜光波导的性能,研究了基于单晶铌酸锂薄膜材料的光波导刻蚀工艺.虽然Ar+物理刻蚀能够达到最高95 nm/min的刻蚀速率,但难以获得光滑的波导侧壁,且以Cr作为掩膜的刻蚀选择比为1∶1,这意味着较差的选择性使其难以实现铌酸锂的深刻蚀.而采用反应离子刻蚀(RIE)得到的刻蚀速率较低,但是以Cr作为掩膜...     

镍铬硅薄膜电阻层的磁控溅射及湿法刻蚀工艺研究

本文通过直流磁控溅射法在96氧化铝基板上沉积镍铬硅薄膜,然后采用光刻及湿法刻蚀工艺实现不同要求的电阻图形。图形化过程中,分别对比HNA刻蚀体系、TMAH刻蚀体系以及催化氧化刻蚀体系的刻蚀效果,从中优选最佳刻蚀体系,并进一步对其进行工艺参数优化。在CNA含量为30%的催化氧化刻蚀体系(CNA:HNO_3:H_2O)中,刻蚀温度50℃,刻蚀速率约为4nm/s时,刻蚀效果最佳,与设计尺寸偏差小,可实现镍铬硅薄膜图形刻蚀线宽(15±1)μm,满足高精度精密薄膜电阻的设计和生产要求。     

多层等离子体蚀刻技术的研究

干法刻蚀现已成为微小高深宽比结构加工与微细图形制作的重要手段.提出了一种新的干法刻蚀技术一多层等离子体蚀刻,充分利用腔体的空间布局,布置多层电极,并采用分层送气装置输送放电气体,实现多层同时进行刻蚀,可成倍提高产能.采用该技术刻蚀光阻为例,从空间与时间两个角度分析了工艺参数对刻蚀速率与均匀性的影响规律与作用机理.实验结果表明,极板间距为50/55/60mm(由下向上),工作压力为40Pa,R[O2:Ar]为1/2,RF功率为600W时,整炉次刻蚀速率均值为14.395nm/min,均匀性为9.8％,此时工艺最为合理.     

ICP干法刻蚀GaAs背孔工艺研究

采用金属Ni作为掩膜,Cl2/BCl3作为刻蚀气体,利用感应耦合等离子体刻蚀(ICP)技术对Ga As HEMT背孔工艺进行研究。本文详细研究了ICP功率、反应室压强、Cl2/BCl3流量比以及RF功率对刻蚀速率、刻蚀形貌以及"长草"效应的影响。实验结果表明:刻蚀速率随ICP功率、Cl2/BCl3流量、RF功率的增加而增加,但随反应室压强的增加,刻蚀速率先增加后降低;相同RF功率条件下,背孔陡直性受ICP功率、反应室压强以及刻蚀气体流量比的影响十分明显;而RF功率则对背孔"长草"效应有较大影响。通过优化刻蚀条件,在ICP功率为500 W,反应室压强为0.4 Pa,Cl2/BCl3流量为20/5 m L/min,RF功率为120 W的刻蚀条件下,刻蚀背孔陡直性好,侧壁平滑,底部平整,刻蚀速率达到3μm/min。     

Nonvolatile memory characteristics of WSi2 nanocrystals embedded in SiO2 dielectrics

A nano-floating gate capacitor with WSi2 nanocrystals embedded in SiO2 dielectrics was fabricated. The WSi2 nanocrystals were created from ultrathin WSi2 film during rapid thermal annealing process and their average size and density were about 2.5 nm and 3.59 x 10(12) cm(-2), respectively. The flat-band voltage shift due to the carrier charging effect of WSi2 nanocrystals were measured up to 5.9 V when the gate voltage sweep in the range of +/- 9 V. The memory window was decreased from 3.7 V to 1.9 V after 1 h and remained about 3.7 V after 10(5) programming/erasing cycles. These results show that there is a possibility for the WSi2 nanocrystals to be applied to nonvolatile memory devices.     

A new DRAM-type memory devices based on polymethacrylate containing pendant 2-methylbenzothiazole

A polymethacrylate containing pendant 2-methylbenzothiazole (pBVMA) with good thermal stability was synthesized by free radical polymerization. The devices based on pBVMA possess a sandwich structure comprising bottom indium-tin oxide (ITO) electrode and top Al electrode. The as-fabricated device exhibits the dynamic random access memory (DRAM) behavior with an ON/OFF current ratio up to 10⁵ and can endure 10⁸ read cycles under −1 V pulse voltage. The effect of the film thickness on the device performance was investigated and the devices fabricated with 75 nm and 45 nm thick pBVMA films were both found to exhibit DRAM type memory behaviors, which may indicate that the Al nanoparticles had no penetration into the thin film during the vacuum-deposition process. The molecular simulation and physical theoretical models were analyzed and the mechanism of the DRAM performance may be attributed to the weak electron withdrawing ability of the molecule.     

以预锂化多壁碳纳米管为负极的锂离子电容器性能

采用内部短路方式对多壁碳纳米管负极进行不同程度的预嵌锂处理,预嵌锂时间为5,30,60min,以预嵌锂多壁碳纳米管极片作为负极,活性炭极片作为正极,组装成锂离子电容器。利用扫描电子显微镜(SEM)、透射电子显微镜(TEM)对多壁碳纳米管及电极极片进行表征分析,采用恒流充放电(GCD)和交流阻抗谱(EIS)研究预嵌锂多壁碳纳米管负极和未预嵌锂处理多壁碳纳米管负极锂离子电容器的性能。电化学测试结果表明,多壁碳纳米管负极预嵌锂大幅提高了电容器充放电性能,对比未嵌锂多壁碳纳米管电容器,在相同的电流密度下(100mA/g),能量密度提高400%。预嵌锂60min,电流密度100mA/g时,其比容量达到57F/g。在电流密度为100～3200mA/g范围内,其最高能量密度与功率密度分别达到90Wh/kg,4130W/kg。1000次充放电循环后,容量保持率维持在85%以上,表现出良好的超级电容器性能。     

超浸润性金属丝网的制备及工艺优化

为拓展三维丝网的应用,强化其微结构作用效果;通过采用直接氧化法和液相、气相沉积成功制备超浸润性Cu丝网(200PPI)。利用扫描电镜、透射电镜、X射线衍射、接触角仪及高速摄像分别对丝网的结构、形貌及浸润性进行表征,并获得膜层的最佳制备工艺。结果表明:曲面丝线上的超亲水膜层呈现为单层微米尺度的刀片花结构,液滴在此表面上的铺展速率可达3.5m/s;经液相、气相沉积方法对其氟化处理后,超亲水丝网成功改性为超疏水丝网;并证明试样在96℃氧化液中氧化15min、液相沉积30min、180℃下热处理20min可获得大于150°的超疏水性能。     

透明致密ZnO薄膜的恒电流沉积及生长过程研究

采用阴极恒电流沉积方法, 以Zn(NO ₃)₂水溶液为电沉积液, 在经电化学预处理后的ITO导电玻璃上生长了具有c轴高度择优取向、均匀致密的透明ZnO薄膜. 采用X射线衍射、扫描电镜和光学透过谱等技术, 对不同沉积时间条件下薄膜的结晶特性、表面和断面结构、光学性质等进行了研究. 结果表明, 沉积时间对ZnO薄膜质量影响明显: 在薄膜生长后期(120min), ZnO薄膜的结晶性和表面平整度明显降低, 晶粒尺寸增大, 可见光透过率下降, 表明高质量ZnO薄膜的电化学沉积有一最佳生长时间; 此外, 薄膜厚度随时间呈线性变化, 表明可通过生长时间实现对ZnO薄膜厚度的精确控制.     

铜与硅之间W/Mo-N薄膜的扩散阻挡层性能

研究了铜与硅之间W／Mo-N薄膜的扩散阻挡性能。在Si(100)基片上利用反应溅射沉积一层Mo-N薄膜,然后再利用直流溅射在Mo-N上面沉积Cu／W薄膜。样品在真空下退火,并利用四点探针、X射线衍射分析、扫描电镜分析、俄歇电子能谱原子深度剖析等测试方法研究了Cu／W／Mo-N／Si的热稳定性及W／Mo-N薄膜对铜与硅的扩散阻挡性能。实验分析表明,Cu／W／Mo-N／Si结构具有非常好的热稳定性,在600℃退火30min仍未发生相变,并能有效的阻挡铜与硅之间的扩散。     

Application to cleaning of waste plastic surfaces using atmospheric non-thermal plasma jets

The removal of paint on the surface of waste plastics is difficult by the conventional process; in this research, a new cleaning mechanism using atmospheric plasmas was examined through optical emission spectroscopy, electron spectroscopy for chemical analysis, and scanning electron microscopy. Results indicate that an increase of pulse frequency enables for a short processing time for the removal of the paint film, signifying that the production of radicals in plasma, especially oxygen radicals, can be controlled by pulse frequency.Plasma jets were generated under the experimental conditions of an input power of 250 W to 400 W, a pulse frequency of 2 kHz to 12 kHz, and a plasma gas flow rate of 30 L/min. Examination of the intensity ratio of the reactive species, as measured by emission spectroscopy, showed that the O/N value increased with an increase in pulse frequency. Results of analysis with electron spectroscopy for chemical analysis show that nitrogen atoms and molybdenum in only the paint film decreased through plasma processing.     

表面缺陷对预磷化电镀锌板磷化膜质量的影响

为了快速高效地锁定磷化生产中常见质量问题的出处,运用扫描电镜(SEM)观察表面膜层微观形貌,并用磷化膜称重试验定量分析膜层单位质量,较为系统地研究了因电镀锌基板表面存在诸如局部锈蚀、色差、残油、镀液残留、冷凝水残留缺陷而引起的后继磷化膜质量问题。结果表明:表面缺陷不但会直接影响后继电镀锌磷化膜的表面质量,而且导致膜层过厚、晶粒尺寸大小不均,不满足后续工艺需求,这对指导具体的预磷化电镀工艺有现实意义。     

Improvement of the properties and electrical performance on TiCl4-based TiN film using sequential flow chemical vapor deposition process

Sequential flow chemical vapor deposition (SFCVD), utilizing TiCl₄/NH₃ as reactants and immediate NH₃ treatment after film deposition, is applied to produce TiN barrier films in the contact process. Secondary ion mass spectroscopy results indicate that the SFCVD TiN film can effectively block the diffusion of WF₆ into the underlying Ti layer during W deposition. NH₃ treatment immediately after film deposition causes SFCVD TiN films to be less contaminated with carbon than TiN films that are formed by metallic organic compounds chemical vapor deposition (MOCVD) and to contain less chlorine residue than conventional TiCl₄/NH₃ CVD TiN layers even at a low reaction temperature. According to the resistance measurement of Kelvin contacts, the SFCVD process yields a lower resistance and a more uniform distribution than the MOCVD or CVD process. Transmission electron microscopic observations demonstrate that WF₆ can diffuse through the MOCVD TiN to react with the underlying Ti layer, causing a rupture at the Ti/TiN interface and poor W adhesion. The SFCVD TiN can serve as a sufficient diffusion barrier against WF₆ penetration during W CVD deposition.     

Hydrangeas-like Bi2WO6: facile synthesis, visible-light driven photocatalysis and theoretical analysis

Hydrangeas-like Bi2WO6 powders were synthesized successfully by salt-ultrasonic assisted hydrothermal process, which were characterized by scanning electron microscopy (SEM), Energy dispersive X-ray (EDS), X-ray diffraction (XRD), and UV-visible diffuse reflectance spectra (UV-Vis DRS), respectively. Bi, W and O elements were contained in the product, which could be tested by EDS. The crystal structure of the catalyst was orthorhombic phase (JCPDS card no.73-1126). And the band gap was estimated to be 2.56 eV from the onset of UV-Vis absorption spectra of the catalyst. In addition, the photocatalytic activities of the products were investigated on the degradation of Rhodamine B (RhB). It demonstrated that photocatalysts exhibited excellent visible-light driven photocatalytic performance. And the target residue was less than 1% in 20 min under Xenon lamp irradiation. First-principles calculations based on density functional theory (DFT) were used to explore the electronic and optical properties of Bi2WO6. And the theoretical calculations could illustrate the photocatalytic performance of Bi2WO6 powders under visible light irradiation.