带电清洗剂的关键性能及开发思路

文章对带电清洗剂的各项关键性能进行了分析,并着重对带电清洗过程中造成动态绝缘性降低的原因进行了分析,提出了研制具有隔离墙功能带电清洗剂的开发思路     

带电清洗用清洗剂的关键性能及开发思路

文章对带电清洗剂的各项关键性能进行了分析，并着重对带电清洗过程中造成动态绝缘性降低的原因进行了分析，提出了研制具有隔离墙功能带电清洗剂的开发思路。     

南方电网通信设备带电清洗维护的应用探讨

文章从不同角度阐述并分析了南方电网通信设备安全运行的环境因素影响,提出了在南方电网范围内通信设备维护工作中引入带电清洗这一新的技术手段。另外,针对南方电网通信设备维护特点,提出开展带电清洗工作的注意问题及解决方案。     

直流不间断供电系统的割接实例分析

通信电源是通信设备的动力之源。随着电信事业的不断发展,通信设备对电源各方面的要求也越来越高。原有的通信电源因时间的推移,其容量、技术指标已不能满足通信设备的需求而需要更换。由于在线通信设备工作特性,即必须带电更换通信电源。为此,文中从割接方案制定原则、设备选型、施工场地布置、施工时间选择、注意事项及方案拟制作了一一阐述。     

直流不间断供电系统的割接实例分析

通信电源是通信设备的动力之源。随着电信事业的不断发展，通信设备对电源各方面的要求也越来越高。原有的通信电源因时间的推移，其容量、技术指标已不能满足通信设备的需求而需要更换。由于在线通信设备工作特性，即必须带电更换通信电源。为此，文中从割接方案制定原则、设备选型、施工场地布置、施工时间选择、注意事项及方案拟制作了一一阐述。     

电力通信设备带电清洗技术的风险管控

电力通信网是电网生产调度实时数据24小时不间断传输的基础,确保电力通信设备安全、稳定、可靠运行,一直是电力通信运维人员孜孜不倦的追求.近年来,带电清洗技术在电力通信设备日常运维中的应用越来越广泛,对改善电力通信设备运行环境、提升设备可靠性、延长设备寿命周期等,都取得了显著的效果.本文结合国网金华供电公司通信设备带电清洗技术应用与实践,分析总结带电清洗技术四个方面的安全隐患、应对措施及实施效果,为提升通信设备带电清洗的质量和安全奠定了坚实的基础.     

洗净安全环境保护--从用户角度看清洗设备制造

本文从清洗剂、清洗设备用户的角度阐述了用户在选择清洗剂、清洗设备时的思路和做法。     

通信机房防雷分析及应对措施

雷电是带电云层之间或云层对大地的迅猛放电过程,其中直击雷和感应雷对建筑物、人类、动物、电子电气设备等危害非常大。防雷对于处于山区的水电厂通信机房更为重要,水电厂选址多位于山区及水流充沛的地区,夏季雷雨天气较多,雷电对通信机房内的信息通信设备危害较大,文章对如何做好通信机房的防雷做了简要的分析,对通信设备采取了行之有效的防雷措施,保证通信设备正常运行。     

基于多源信息融合的飞机清洗剂优选方法

针对飞机清洗剂的选型问题,以清洗剂的实际使用效果为评价基准,根据飞机服役环境特点,开展典型气候的自然环境试验;进一步地基于多源信息融合的加权平均数据处理技术,提出了飞机清洗剂优选方法。结合典型装备的清洗剂优选需求,在热带海洋环境下开展了两种清洗剂清洗装备涂层的自然环境试验。研究结果表明：清洗剂定期清洗的试验件综合性能明显地优于未清洗的试验件;多源信息融合可有效地降低不确定性因素对测试结果的影响,所提出的方法正确有效,可用于飞机清洗剂的优选。     

问与答

问与答问：在通信电源设备带电施工中，应注意见些问题，采取哪些防范措施？答：近几年来，随着通信事业的迅猛发展，我国大部分电信局的电源设备也快速地更新换代。但是，各局具体用电电压不一样，导致同一机房内设备更新速度不一样，这样必然会出现设备改造中带电施工的...     

离心清洗技术在印制电路板清洗中的应用

焊接属电子设备生产过程中的一个关键步骤.焊接后必须进行清洗才能确保电子设备的可靠性,延缓其工作寿命.本文重点介绍了一种离心清洗技术,清洗洁净度高,能有效去除PCB残留物.     

硅片清洗研究进展

综述了清洗液的组成、特点、清洗机理、对硅片表面质量的影响以及清洗技术和理论的发展;着重指出了,改进的RCAI对颗粒度、微粗糙度和金属沾污作用的机理,讨论了它与清洗顺序的关系,极度稀释的RCA2能使金属沾污降至10∧10原子/cm∧2以下,且不易使颗粒重新沉淀;最后介绍了清洗工艺的最新进展。     

纳秒脉冲激光清洗石化设备对清洗表面的影响

采用纳秒脉冲激光对石化设备普遍使用的20钢表面锈蚀层以及油污进行了激光清洗试验,通过正交实验法得到优化后的激光清洗工艺参数,在激光功率18 W,激光脉冲重复频率75kHz,扫描速度3 000mm/s的清洗工艺参数下可有效去除20钢表面的锈蚀层;在激光功率20 W,激光脉冲重复频率75 kHz,扫描速度2 250 mm/s的清洗工艺参数下可有效去除20钢表面附着的油污。分析了激光清洗前后材料表面形貌的变化,研究了激光清洗前后表面的显微硬度以及耐腐蚀性,结果表明：激光清洗可以在不改变材料的耐腐蚀性能的同时提升材料表面的显微硬度,从而达到理想的激光清洗效果。     

半导体IC清洗技术

介绍了半导体IC制程中存在的各种污染物类型及其对IC制程的影响和各种污染物的去除方法,并对湿法和干法清洗的特点及去除效果进行了分析比较。     

Comparison of novel cleaning solutions with various chelatingagents for post-CMP cleaning on poly-Si film

In this study, various cleaning solutions containing chelating agents with carboxyl acid group (-COOH), such as ethylenediaminetetraacetic acid, citric acid and oxalic acid, were developed for post-poly-Si CMP cleaning. The chelating agent and tetramethylammonium hydroxide (TMAH) were simultaneously added into 2% ammonium hydroxide alkaline solution to promote the removal efficiency on particles and metallic impurities. The effectiveness of various cleaning recipes and their interaction mechanism with the poly-Si surface were studied. We could explain the surface behavior of various cleaning solutions by the different molecular size and charge of chelating agents. Based on the mechanism, the behavior of surface particle and metallic impurity can be realized. The co-existence of TMAH with citric acid or oxalic acid in the alkaline cleaning solutions can significantly enhance the electrical properties of capacitors     

Megasonic cleaning: A new cleaning and drying system for use in semiconductor processing

A compact system for cleaning wafers in all stages of device manufacture has been developed which uses high frequency (0.8 to 1 MHZ) ultrasonic energy (hence, the term “Megasonic”) and a standard chemical solution which is not heated. The patented process effectively removes particles down to approximately 0.3 ym diameter simultaneously from the front and back surfaces, thin organic films, and many ionic impurities. After a brief water rinse, the wafers are dried in a hot air stream. The total cycle time is approximately 15 minutes, and at least 100 wafers can be cleaned in quartz or plastic carriers at the same time and without the need for loading or unloading. Megasonic cleaning has been applied to silicon wafers, ceramics, and photomasks, and has been used for photo- Paper presented at 20th Annual Electronic Materials Conference, University of California at Santa Barbara, CA, June 30, 1978.     

Post-CMP cleaning using acoustic streaming

Noncontact surface cleaning is a desirable process in post-chemical mechanical polishing cleaning. High-frequency megasonic cleaning utilizes acoustic streaming as the dominant particle removal mechanism. It is widely used in the semiconductor industry for the removal of particulate contamination. This paper introduces recent results that involve the removal of silica slurry using megasonic cleaning. A noncontact (megasonic) cleaning process for the removal of slurry residues from dipped and polished wafers is presented. Complete particle removal (100%) was achieved using megasonics with deionized water with 1% NH₄OH using wafers dipped in silica slurry. The optimum conditions for megasonic cleaning (power, temperature, and time) were determined for the removal of the silica slurry. Up to 99% particle removal from polished wafers was accomplished using noncontact megasonic cleaning with 1% ammonia for 15 min.     

印制电路板组装件绿色清洗技术

绿色清洗技术又称为无公害清洗技术,与无铅焊接技术一起并列为电子组装两大关键基础技术之一,统称为电气互联绿色制造技术,是重点攻关内容之一;在介绍了清洗剂的要求与特性的基础上,对清洗技术问题进行了详尽的探讨.     

Particle-free wafer cleaning and drying technology

It is reported that an NH₄OH-H₂O₂ solution is excellent for removing particulate contaminants from VLSI silicon wafers after chemical solution treatment. The ratio of NH₄ OH in the solution can be reduced down to 1/10 of the standard ratio while keeping high removal efficiency. By decreasing the NH₄ OH content, wafer damage which appears as a so-called haze during the NH₄OH-H₂O₂ treatment is reduced. To establish a particle-free wafer drying system, a particle-generation-free isopropanol (IPA) vapor drying system has been developed. By eliminating all possible particle generation sources from the drying system, ultraclean wafer drying equipment has been realized. A number of parameters to be controlled have been thoroughly investigated. Three were found to seriously influence surface cleanliness after drying: the water content in the IPA, temperature distribution around the wafers, and the IPA vapor velocity. The optimum drying conditions in which high quality of wafer surface cleanliness can be realized were confirmed experimentally