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赵丽利林均品张来启王艳丽叶丰陈国良 《材料工程》2009,(S1):126-130
利用SEM,XRD和EPMA研究了Ti45Al8Nb,Ti45Al12Nb,Ti52Al8Nb和Ti52Al12Nb四种合金在900℃空气中100 h的氧化行为。结果表明:四种含铌合金的抗氧化性均大幅度优于无铌合金。高的Al含量可提高合金抗氧化性,52Al合金氧化膜内均有更稳定的Al2O3出现,氧化膜下出现贫铝区。Ti52Al8Nb合金氧化膜除外层生成Al2O3保护层外,内层还分布着岛状Al2O3。12Nb合金氧化膜内出现更多的Nb2Al相,其对于合金抗氧化性并不总是有利的。更高的Al和Nb含量均改变氧化膜的生长机制。合金具有最优的抗氧化性需要Al和Nb元素协同作用。 相似文献
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分别采用多弧离子镀技术及阳极氧化技术在LF6防锈铝基体表面制备了Ti(C,N)/TiN/Ti(C,N)/TiN/ Ti(C,N)/TiN六层多元多层膜及阳极氧化膜,并对比考察研究了该两种膜的力学性能和摩擦学性能,结果表明:多元多层膜与阳极氧化膜划痕临界荷载分别为76N,60N;显微硬度分别为HV0.251404,HV0.25520;二者摩擦系数都较高,分别为0.66,0.76;都使对偶件磨损;但与传统的阳极氧化膜相比,多元多层膜硬度与耐磨性都提高了近2倍,且其摩擦曲线平滑,呈稳定磨损状态,而阳极氧化膜摩擦曲线呈跳跃状,呈非稳定磨损状态. 相似文献
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本文叙述了在硫酸添加草酸的氧化溶液中,以同样的工艺对含硅的铸铝合金和轧制铝合金进行硬质阳极氧化处理所得到的氧化膜垂直横截面的金相形貌却不同。通过电子探针分析,在氧化膜不均匀和不完整的部位夹杂有硅,因为硅在氧化过程中不溶解,而其他的合金元素溶解于溶液中,硅在合金中阻止了铝的氧化,结果,使含硅铸铝合金阳极氧化膜不均匀、不完整。本文初步阐述了含硅铸铝合金难于阳极氧化的机理 相似文献
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水解沉积--阳极氧化法形成Al-Ti复合氧化膜 总被引:3,自引:0,他引:3
通过含钛无机盐的水解沉积及高温热处理,铝电极箔表面形成高介电常数氧化物———TiO2 膜层,然后在己二酸铵溶液中恒电流阳极氧化,形成 Al Ti复合氧化膜。AFM观测了含钛无机盐水解沉积过程中,铝电极箔表面形貌的变化。在铬酸和磷酸的混合溶液中测试了氧化膜的耐电压随溶解时间的变化。通过SIMS检测了复合氧化膜中 Al3 、Ti4 的强度随溅射时间的变化。膜溶解试验及 SIMS 检测结果表明Al Ti复合氧化膜由 3 层组成,外层和中间层为 Al、Ti、O不同配比的混合物,内层则为纯的 Al2O3。铝电极箔比容随氧化膜耐电压的变化关系曲线表明,60V耐电压下,Al Ti复合氧化膜的比容提高率为51%。 相似文献
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为改良T1紫铜、QAl9-4铝青铜合金的外观并提高耐腐蚀性能,使用氢氧化钠、钼酸铵的水溶液作为工作溶液,对T1紫铜、QAl9-4铝青铜合金进行阳极氧化处理。采用扫描电子显微镜、能谱和金相显微镜测试2种材料表面的阳极氧化膜层的显微形貌、主要成分和金相组织,从而优化阳极氧化工艺参数。通过外观检测、附着强度测试、耐高温、中性盐雾试验等检测方法考核了阳极氧化膜层的综合性能。结果表明:阳极氧化电流密度为1.0 A/dm2,时间为25~30 min,温度为80~90℃时,可以获得厚度为1~3μm、可耐温400℃的黑色氧化膜。经适当封闭处理的2种材料表面的阳极氧化膜层阻碍了腐蚀介质的扩散,T1紫铜耐腐蚀性提高6.0倍,QAl9-4铝青铜合金耐腐蚀性提高2.5倍。生产应用表明该工艺稳定、操作简便,适用于T1紫铜、QAl9-4铝青铜合金材料产品大批量生产,能够满足产品装饰性、消光性、耐高温性和耐腐蚀性要求。 相似文献
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Dingchuan Xue Yeoheung Yun Mark J. Schulz Vesselin Shanov 《Materials science & engineering. C, Materials for biological applications》2011,31(2):215-223
Magnesium (Mg) and its alloys are emerging as a possible biodegradable implant material. However, Mg implants may degrade too quickly in the body, before the natural healing process is complete. In this work, anodization was investigated to slow down the initial corrosion of Mg in a simulated body corrosive environment. Pure Mg and AZ91D alloy were anodized and their corrosion resistance was compared in terms of anodization behavior and parameters such as applied voltage and current with different anodization time. Electrochemical impedance spectroscopy, DC polarization, and immersion testing were used to evaluate the corrosion resistance of Mg samples and further optimize anodization parameters. The results showed that anodization increased the corrosion resistance of both pure Mg and AZ91D samples. Further characterization showed the anodized layers on both pure Mg and AZ91D consisted of Mg, O and Si, in the mixture of MgO and Mg2SiO4. 相似文献
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对保留表面包铝和去除包铝的2E12-T3铝合金采用硫酸阳极氧化处理工艺,研究了包铝层和氧化时间对铝合金阳极氧化行为及膜层耐蚀性的影响。采用扫描电子显微镜观察氧化膜的表面以及截面形貌,应用动电位扫描极化曲线和电化学阻抗谱对膜层的电化学性能进行分析。结果表明:两种铝合金表面均能形成具有防护性能的阳极氧化膜,膜层随氧化时间延长而增厚。富铜的第二相颗粒会使得不带包铝的2E12铝合金氧化膜具有更多孔洞缺陷,甚至出现微裂纹。保留包铝的2E12铝合金表面氧化膜更厚,孔洞缺陷少,耐蚀性更好。阳极氧化30min和45min的2E12铝合金阳极氧化膜具有较低的腐蚀电流和较高的多孔层阻抗,耐蚀性好。 相似文献
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软磁合金是新一代质子/重离子同步加速器加速器的核心材料,在其表面涂覆绝缘涂层可有效降低高频涡流损耗。同时,高温热处理(~600 ℃)可有效减少软磁合金冷压成形产生的缺陷和位错而引起的内部残余应力。因此,软磁合金用绝缘涂层还需满足耐高温要求。SiO2涂层是最常见的无机涂层材料,具有良好的绝缘性能和耐高温性能。本工作在植酸催化TEOS+MTES制备硅溶胶的基础上,加入硅烷偶联剂KH-560进一步提高硅溶胶的成膜性能,系统研究了KH-560对SiO2涂层结构与性能的影响,并系统分析了KH-560提高SiO2涂层性能的机理。研究表明,添加适量的KH-560可有效提高薄膜的稳定性和成膜性。特别是当KH-560添加量为0.04 mol时,SiO2涂层质量最好,SiO2-0.04 KH涂层表现出最佳的耐腐蚀性和电绝缘性。在100 V时,SiO2-0.04 KH涂层的方块电阻仍保持2.95×1011Ω/□。综上,本研究利用植酸催化和KH-560改性协同作用制备出高质量的SiO2涂层,涂层具有良好的耐高温和优异的绝缘性能。 相似文献
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Park DJ Kim SH Lee KJ Lee JH Choa YH 《Journal of nanoscience and nanotechnology》2006,6(11):3408-3411
High-density and uniform-sized FeCo alloy nanowires were prepared by electro deposition of Fe2+ and Co2+ into Anodic aluminum oxide (AAO) templates with two different diameters. These templates were fabricated with three-step anodization method. The additional anodization after the 2nd anodization step resulted in the decrease of the thickness of bottom barrier layer. It found an optimum condition to obtain a successful electrodeposition of Fe2+ and Co2+ into AAO templates. The nanowires with the diameters of 25 nm and 80 nm were homogeneously embedded in the AAO templates and their magnetic properties were strongly affected by diameters of nanowire. 相似文献
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目的 为了增强钢制结构表面的耐蚀性,研究Mo含量对CoCrFeMnNiMox高熵合金组织与耐蚀性的影响。方法 采用激光熔覆的方式在N80钢上制备CoCrFeMnNiMox(x=0.1、0.2、0.3、0.4、0.5)高熵合金熔覆层,研究Mo含量变化对高熵合金组织、物相与耐蚀性的影响。结果 CoCrFeMnNiMox熔覆试样均由单一的FCC固溶体相组成,随着Mo含量的增加,晶格畸变增大;当Mo的摩尔比超过0.3后,晶粒有长大倾向;Mo的摩尔比为0.5时,表面择优生长晶面由(111)密排晶面转变为(200)非密排晶面。熔覆试样在氯化钠溶液和稀硫酸溶液中的耐蚀性相较N80钢提升明显,其中,CoCrMnFeNiMo0.3的耐蚀性最好,在质量分数为3.5%的氯化钠溶液中其自腐蚀电流密度是N80钢的5%,自腐蚀电位比N80钢提高了1倍;在0.5 mol/L硫酸溶液中,其自腐蚀电流密度是N80钢的31%,钝化区电流密度比N80钢降低了1个数量级。结论 在该高熵合金体系中,随着Mo含量的增加,晶格畸变增大。CoCrMnFeNiMox高熵合金熔覆层可以有效地阻止基体腐蚀的发生。Mo元素在溶液中能够形成MoO3附着在金属表面,从而形成稳定致密的保护层,减少点蚀的发生。CoCrMnFeNiMo0.3熔覆层的耐蚀性最好。 相似文献
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Effects of temperature and voltage mode on nanoporous anodic aluminum oxide films by one-step anodization 总被引:1,自引:0,他引:1
Many conventional anodic aluminum oxide (AAO) templates were performed using two-step direct current anodization (DCA) at low temperature (0–5 °C) to avoid dissolution effects. This process is relatively complex. Pulse anodization (PA) by switching between high and low voltages has been used to improve wear resistance and corrosion resistance in barrier type anodic oxidation of aluminum or hard anodization for current nanotechnology. However, there are only few investigations of AAO by hybrid pulse anodization (HPA) with normal-positive and small-negative voltages, especially for the one-step anodization, to shorten the running time. In this article, the effects of temperature and voltage modes (DCA vs. HPA) on one-step anodization have been investigated. The porous AAO films were fabricated using one-step anodization in 0.5 M oxalic acid in different voltage modes including the HPA and DCA and the environment temperature were varied at 5–15 °C. The morphology, pore size and oxide thickness of AAO films were characterized by high resolution field emission scanning electron microscope. The pore size distribution and circularity of AAO films can be quantitatively analyzed by image processing of SEM. The pore distribution uniformity and circularity of AAO by HPA is much better than DCA due to its effective cooling at relatively high temperatures. On the other hand, increasing environment temperature can increase the growth rate and enlarge the pore size of AAO films. The results of one-step anodization by hybrid pulse could promote the AAO quality and provide a simple and convenient fabrication compared to DCA. 相似文献
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This work reports the corrosion behavior of nanotubular oxide layers on Ti-29Nb-xZr alloys with different compositions by anodization in 1 M H3PO4 + 0.8 wt% NaF. Depending on the alloy composition, nanoporous or highly ordered nanotube structures can be formed. The nanotube oxides on the Ti-29Nb-xZr alloy showed lower corrosion current density compared to non-treated sample. 相似文献
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Bai A Cheng B Wang X Xue C Zuo Y Wang Q 《Journal of nanoscience and nanotechnology》2010,10(11):7428-7431
A convenient fabrication technology for large-area, highly-ordered nanoelectrode arrays on silicon substrate has been described here, using porous anodic alumina (PAA) as a template. The ultrathin PAA membranes were anodic oxidized utilizing a two-step anodization method, from Al film evaporated on substrate. The purposes for the use of two-step anodization were, first, improving the regularity of the porous structures, and second reducing the thickness of the membranes to 100-200 nm we desired. Then the nanoelectrode arrays were obtained by electroless depositing Ni-W alloy into the through pores of PAA membranes, making the alloy isolated by the insulating pore walls and contacting with the silicon substrates at the bottoms of pores. The Ni-W alloy was also electroless deposited at the back surface of silicon to form back electrode. Then ohmic contact properties between silicon and Ni-W alloy were investigated after rapid thermal annealing. Scanning electron microscopy (SEM) observations showed the structure characteristics, and the influence factors of fabrication effect were discussed. The current-voltage (I-V) curves revealed the contact properties. After annealing in N2 at 700 degrees C, good linear property was shown with contact resistance of 33 omega, which confirmed ohmic contacts between silicon and electrodes. These results presented significant application potential of this technology in nanosize current-injection devices in optoelectronics, microelectronics and bio-medical fields. 相似文献
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At 1 mA cm-2 the anodization voltage of sputtered Al-Ta alloy films with about 7 at.% Ta content rises linearly with time at a rate of 0.45 V s-1. The Al-Ta thickness-anodization voltage ratio and the oxide growth constant have been determined, for 7–14 at.% Ta in the films with 1% citric acid electrolyte, to be 1.03-0.94 nm V-1 and 1.42–1.5 nm V-1, respectively. The permittivity was found to range from 10.0–11.4, corresponding to a capacitance density of about 330 pF mm-2 for an anodization voltage of 200 V. The temperature coefficient of capacitance (t.c.c.) was 500 ppm K-1. The capacitance between 400 Hz and 1 MHz remained constant within ±1%. At 1 kHz the disspation factor tan δ was 0.6%.Nearly all leakage currents were between 0.1 and 0.5 nA using 5.6 nF test capacitors and 50 V as the test voltage. This corresponds to an insulation resistance R of 1011 Ω or more, or a time constant τ ( = RC) of approximately 1000 s. For the 50 V test the yield was about 90% and at least 80% of the capacitors had no short circuits after step stress tests up to 90 V.The current-voltage characteristics of capacitors made from Al-Ta (7 at.% Ta) films showed non-destructive breakdown voltages greater than 100 V. Only a slight deviation from symmetry was noticed whether the Al-Ta electrode was positive or negative, indicating that the capacitors were virtually non-polar. In some cases non-shorting breakdown was observed. 相似文献