L波段100W全固态放大器

采用双管芯推挽工作,积木功率模块、大功率微带合成电路以及有效的热设计,在L波段可获得100W的输出功率,为设计更大功率的全固态功率放大器打下了良好基础。     

C波段GaN固态功放及其功率合成器研制北大核心CSCD

介绍了一种C波段高功率高效率GaN固态功率放大器及其径向同轴功率合成器研究成果,基于该功率合成器设计出一种C波段输出功率110 W(CW)、效率40%的高效率GaN功率放大器。实验测试结果:表明采用四路C波段30 W GaN功放径向同轴功率合成方法,其功率合成效率达93%,解决了实际工程应用中C波段高功率微波功率放大器的高效率问题,为下一步研制更高性能高效率高功率固态功率放大器探索出一种可行的技术方法。     

TX-10000-SS型全固态调频发射机功放的调整

TX-10000-SS 是意大利 R·V·R 公司生产的10kW 全固态调频立体声发射机。它由激励器、功率放大器、功率分配、合成器、人射、反射功率检测电路、电源电路、控制保护电路等基本单元组成。功率放大器采用 PHILIPS 公司生产的大功率场效应管BLF278,输出功率300W。由功率放大管与之相适应的外围电路构成功率放大器的基本单元模块,根     

S频段300W固态功率放大器的设计

本文介绍了S频段300W功率放大器的设计与实现,具有高功率、小型化的优点。对于S频段LDMOS外匹配型功率管,最重要是匹配电路的设计,匹配电路关系着功率管性能的实现,难度较大,而本次设计更需要超频段使用。本文利用仿真软件ADS对匹配电路进行了设计,采用超频段匹配技术,在实际设计过程中进行了优化处理,测试结果表明设计的功率放大器满足指标要求。针对功率放大器设计了监测与控保电路,对功率放大器的状态进行监测,对异常情况进行了保护性设计,实现了功率放大器的健康管理。     

S波段高功率T/R组件的小型化和高可靠设计

介绍了一种S波段高功率T/R组件的小型化和高可靠设计技术。组件整体采用了一种＂三明治＂式电路结构形式,并使用多层微波复合介质基板完成高密度互连,使用集成双管功放单元和层压串馈功率合成器技术制作高功率密度功放电路。结果表明,用该技术方法研制的S波段高功率T/R组件输出功率可达800 W,重量约3 kg,长期工作稳定可靠。     

基于键合金丝补偿的太赫兹瓦级功率合成技术研究

针对太赫兹波段固态大功率应用需求,基于氮化镓功率放大器单片集成电路（Monolithic Microwave Integrated Circuit,MMIC）,采用功率合成技术实现了太赫兹波段瓦级功率输出。通过太赫兹波段微带/波导转换结构和键合金丝补偿技术,结合E面T型结二路合成功率分配/合成器,将两片MMIC封装成最大输出功率为160 mW的功率单元模块。在此基础上,采用八路E面合成器设计了频率覆盖180～238 GHz的十六路功率合成放大器。在漏极电压为+10 V时,带内输出功率大于300 mW,189 GHz输出功率达到了1.03 W。     

ESOTERIC Grandioso S1

ESOTERIC日前宣布推出全新的Grandioso S1旗舰级立体声后级,这款功率放大器延续了M1单声道后级的设计理念,装载强大的电源系统,全平衡放大技术提供150W/8Ω或600W/2Ω的立体声功率输出。Grandioso S1从电源部分开始就已经采用双单声道的设计,一台机内左右两个声道从电源系统到输入、放大电路、输出等都是各自完全独立,以完全隔离左右声道之间的微弱信号干扰,同时左右声道的全部元件都会做精细配对才安装,以实现更佳的一致性。Grandioso S1采用线性扩增功率晶体管,功率放大器模块为5组并联推挽双极LAPT元件和三级达林顿配置,具有优良的高频特性和良好的驱动能力;采用了独特的LIDSC（低阻抗驱动级耦合）电路以增加电流供给容量,功率放大连续输出电流为17A,瞬间电流达34A;阻尼系数达到1000,提供良好的低音驱动能力,拥有优越的喇叭驾御驱动能力。     

采用EL34制作的推挽功率放大器

本文介绍一款用EL34做输出管的推挽放大器,其输出功率在20W以上。另外,本文照顾到初学者的需求,在电路设计方面做了较为详细的说明。该推挽功率放大器为了提高输入灵敏度,便于与CD机直接连接,裂相电路选用了增益大的阴极耦合型电路。另外,该机还可以根据所接扬声器的实际情况,改变负反馈量,改善音质。其音质可以达到发烧友的要求。由于真空管单端功率放大器的输出功率都不大,再加上近年来生产的扬声器的效率大多数都在90dB以下,所以会感到音量不足。为此该功率放大器决定采用推挽输出电路。推挽输出电路除了输出功率大之外,还具有电路可…     

S波段88W SiC MESFET推挽放大器研究

采用管壳内预匹配及外电路匹配相结合的方法,制作成功S波段高增益、高效率、大功率SiC MESFET推挽放大器。采用预匹配技术提高了器件输入、输出阻抗,优化了测试电路结构,成功消除了输入信号对栅极偏置电压的影响,提高了电路稳定性。放大器在脉宽为300μs、占空比为10%脉冲测试时,频率2GHz,Vds=50V脉冲输出峰值功率为88.7W(49.5dBm),功率增益为8.1dB,峰值功率附加效率为30.4%。     

C波段固态功率放大器的研制及其可靠性验证

为了满足卫星通信大功率、高线性的特殊需求,研制了一款C波段70 W高线性大功率固态功率放大器(SSPA)。通过改进芯片材料结构、器件的匹配状态及工作状态,建立了器件的非线性模型,在满足功率和效率的基础上,实现了功率器件线性指标的提高。在SSPA中设计了场效应晶体管(FET)预失真电路,改善了SSPA的线性化指标,在输入功率回退2～10 dB区间实现了5～7 dB的三阶互调改善,满足了系统的使用要求。预失真电路在长寿命航天器中应用较少,同时C波段70 W SSPA输出功率较大,存在输出功率降低的风险,为此进行了等效在轨工作15年加速寿命试验验证。在整个寿命试验周期内,输出功率大于70 W,三阶互调优于-20 dBc,验证了SSPA长期工作的可靠性。     

Broadband GaN HEMT push-pull microwave power amplifier

We report a broadband, linear, push-pull amplifier that utilizes GaN-based HEMTs grown on SiC substrates. The high power density capabilities of these devices can be enhanced by the high efficiency achievable with push-pull operation. Good amplifier performance is facilitated by use of a new low-loss balun that is implemented with three symmetric coupled lines and which showed insertion loss of less than 0.5 dB per balun. The bias was injected through the baluns, thereby simplifying the amplifier design and reducing loss associated with dc decoupling capacitors. Using two 1.5 mm HEMTs with 0.35-μm gate length, a push-pull amplifier produced a small-signal gain of 8 dB at 5 GH2, a 3 dB bandwidth of 3.5-10.5 GHz, and a PAE of 25%     

L/S-band 140-W push-pull power AlGaAs/GaAs HFET's for digitalcellular base stations

An L/S band high-power and low-distortion AlGaAs/GaAs heterostructure field-effect-transistor amplifier has been developed. The amplifier employed two pairs of prematched GaAs chips mounted on a single package, and the total output power was combined in a push-pull configuration with a low-loss microstrip balun circuit. The developed amplifier demonstrated state of-the-art performance of 140 W output power with 11.5 dB linear gain at 2.2 GHz. In addition, it exhibited extremely low distortion performance, which is suitable for digital cellular base station system applications     

Tournament-Shaped Magnetically Coupled Power-Combiner Architecture for RF CMOS Power Amplifier

A tournament-shaped magnetically coupled power-combiner architecture for a fully integrated RF CMOS power amplifier is proposed. Various 1 : 1 transmission line transformers are used to design the power combiner. To demonstrate the new architecture, a 1.81-GHz CMOS power amplifier using the tournament-shaped power combiner was implemented with a 0.18-mum RF CMOS process. All of the matching components, including the input and output transformer, were fully integrated. The amplifier achieved a drain efficiency of 38% at the maximum output power of 31.7 dBm.     

S频段大功率径向波导合成器设计

针对大功率固态放大器进行多模块功率合成的需要,设计了一种S频段8路大功率径向波导合成器,用来实现kW级的功率合成输出。介绍了径向波导合成器的工作原理,进行了径向波导合成器的结构设计和电磁分析,提出了设计中的关键技术。运用高频结构仿真器(HFSS)仿真软件进行了建模、仿真,并对样机测试结果与仿真结果进行了对比分析,表明该S频段大功率径向波导合成器指标满足设计要求。     

Integrated-antenna push-pull power amplifiers

In this paper, the integrated-antenna concept is applied to push-pull power amplifiers (PAs). In this approach, the antenna serves as an out-of-phase power combiner and tuned load for higher harmonics. This new architecture effectively has a near-zero loss output hybrid, and results in a high-efficiency PA. The first example is a narrow-band push-pull amplifier integrated with a dual-feed patch antenna. At an operating frequency of 2.5 GHz, a maximum measured power-added efficiency (PAE) of 55% is achieved. The second example is a broadband push-pull amplifier integrated with a dual-feed slot antenna amplifier operating at 2.46 GHz which has a peak PAE of 63%, and PAE better than 55% in an 8% bandwidth. Additionally, 48% PAE is achieved with code-division multiple-access modulation and adjacent-channel power ratio better than -42 dBe at a 1.25-MHz offset     

A high-efficiency 4×20 W monolithic audio amplifier forautomobile radios using a complementary D-MOS BCD technology

A monolithic quad audio power amplifier which reduces power dissipation by 45% with a music signal compared to a standard class-AB amplifier is described. A new two-stage operational amplifier, capable of providing high output current, is used for each one of eight power amplifiers. In a bridge configuration, a common-loop mode control is performed exploiting a sample-and-hold circuit. A multipower bipolar-CMOS-DMOS (BCD) technology is employed with a push-pull rail-to-rail output stage and a low-loss power switch. Experimental results are presented     

国产高功率光纤泵浦合束器特性研究

在全光纤结构光纤激光器/放大器中,泵浦合束器的功率特性直接影响激光器/放大器最终输出功率。依据合束器的基本结构,分析了合束器的损耗来源,研究了不同情况下某系列国产合束器的功率和温度特性。指出了泵浦损耗、泵浦回光、环境温度以及泵光亮度等因素对合束器工作温度的影响。对某国产新型高功率合束器进行测试,测试结果表明,单臂可输入功率大于100W,有望支撑全国产千瓦量级高功率光纤激光器,相关研究结果为合束器的设计和热管理提供了参考。     

Ka波段16W脉冲功率放大器的研制

Ka波段毫米波功率放大器的输出功率往往受限于功率合成部分的损耗,其合成器多路之间的隔离度、多级放大模块的级间匹配好坏及整体散热性能是影响整个功放可靠性的重要因素.针对上述毫米波固态功放的特点,提出了一种新颖的高效高可靠性的Ka波段宽带功率合成结构,采用低损耗的多支节波导作为功率分配/合成单元,结合以双探针波导-微带转换结构,实现了高效率的8路功率合成,各路之间隔离度大于25 dB,保证了功率合成器的高可靠性.以此为基础成功研制出一个脉冲式Ka波段固态功率放大器模块,该模块在33～37 GHz频段内,最高输出功率大于16 W,小信号增益大于55 dB,功率合成效率达到87%.     

A gallium-nitride push-pull microwave power amplifier

A highly efficient linear, broad-band AlGaN-GaN high electron-mobility transistor (HEMT) push-pull microwave power amplifier has been achieved using discrete devices. Instrumental was a low-loss planar three-coupled-line balun with integrated biasing. Using two 1.5-mm GaN HEMTs, a push-pull amplifier yielded 42% power-added efficiency with 28.5-dBm input power at 5.2 GHz, and a 3-dB bandwidth of 4-8.5 GHz was achieved with class-B bias. The output power at 3-dB gain compression was 36 dBm under continuous-wave operation. Along with the high efficiency, good linearity was obtained compared to single-ended operation. The second harmonic content of the amplifier was more than 30 dB down over the 4-8.5-GHz band, and a two-tone excitation measurement gave an input third-order intercept point of 31.5 dBm at 8 GHz. These experimental results and an analysis of the periodic load presented by the output balun suggest the plausibility of broad-band push-pull operation for microwave systems with frequency diversity.     

超声聚焦微喷压电换能器射频电源的设计

介绍了一种应用于生物微阵列中,工作频率为10~20 MHz的超声聚焦微喷压电换能器射频电源的设计。该射频电源采用基于直接数字频率合成(DDS)技术得到波谱纯净,频率连续可调,幅值可调,分辨率高且稳定的射频信号。采用具有可关断功能的视频运算放大器实现了一种简单实用、低成本的脉冲调制电路。功率输出级采用变压器推挽式功率放大电路,实现了宽带脉冲调制信号的功率有效放大。