Balanced operation of a GaInAs/GaInAsP multiple-quantum-wellintegrated heterodyne receiver

The balanced operation of a multiple-quantum-well balanced heterodyne receiver photonic integrated circuit (PIC) is described. Using only SMA-connected 50 Ω commercial electronics, a free-space beam sensitivity of -42.3 dBm at 108 Mb/s and -39.7 dBm at 200 Mb/s for NRZ FSK (frequency-shift keying) reception has been achieved. This represents a 14 dB improvement over any previous heterodyne receiver PIC sensitivity. In addition to providing the multichannel benefits of heterodyne reception, this is also the highest sensitivity yet reported for any OEIC (optoelectronic integrated circuit) receiver     

Multifunction W-band MMIC receiver technology

The development of a W-band (75-110 GHz) monolithic receiver, culminating in a three-chip multifunctional monolithic microwave integrated circuit (MMIC) receiver front-end, is described. The heart of the receiver is a four-channel multiplexer, with each channel possessing its own single balanced mixer and low-noise IF amplifier, all integrated onto a single GaAs chip. Two dual-channel monolithic Gunn oscillators with the drive level and spectral parity to meet system requirements have been developed. The key to the development of the monolithic front-end has been to ensure process compatibility between individual components and the careful partitioning of the chip architecture     

Integrated optical E-field sensors with a balanced detection scheme

Compact and nonperturbing integrated optical E-field sensors are used for electric field measurements. The theoretical sensitivity of an integrated optical sensor system is limited by the shot noise. In conventional sensors, however the minimum detectable electric field strength is limited by the relative intensity noise (RIN) of the laser diode. Achieving the theoretical sensitivity a new sensor system is presented. Using a balanced optical receiver both a signal gain and a reduction of the RIN at the optical receiver is obtained. The principle function and the potential of the balanced detection scheme in comparison with existing concepts as well as first measurements are presented, yielding a sensitivity of less than 300 μV/(m√Hz) with standard laser diodes and a receiving dipole length of 40 mm     

A Ku-band integrated receiver front end

A Ku-band integrated receiver front end has been fabricated on 20-mil aluminum oxide substrates. The receiver consists of a balanced mixer and a Gunn oscillator within an area of 0.300/spl times/0.325 inch. The performance of both packaged and unpackaged microstripline receivers is described. Using external RF tuning, a noise figure of 9 dB at 18 GHz was obtained. A higher Q Gunn oscillator design is needed for more reliable single-frequency operation.     

Integrated X-band Sweeping Superheterodyne Receiver

The development of an integrated low-noise sweeping superheterodyne receiver is described. Based upon a receiver performance tradeoff study, a group of components were designed and integrated within a single housing occupying 5.9 in/sup 3/, less connectors. The integrated receiver weighs 6.4 oz, including magnets, and contains the following components: a wide-band low-noise tunnel-diode amplifer (TDA), an image-rejection balanced mixer, a varactor-tuned Gunn oscillator, a four-stage IF amplifier, and a quasi-complementary IF output filter. The housing also contains an interstage ferrite isolator, a bias distribution network with subminiature potentiometers, and a branch-line coupler. This coupler permits the injection of an external oscillator and allows the system to be evaluated outside the band covered by the internal Gunn oscillator. This receiver is the first kind to integrate within a minimum volume all the components necessary for a wide-band low-noise rapid-scan X-band imageless superheterodyne receiver. Varactor tuning permitted the entire receiver to be integrated in a package having about one fifth the weight and two fifths the volume of other similar receiver designs (e.g., a receiver utilizing a YIG-tuned oscillator).     

A subharmonic self-oscillating mixer with integrated antenna for60-GHz wireless applications

A balanced integrated-antenna self-oscillating mixer at 60 GHz is presented in this paper. The modal radiation characteristics of a dual-feed planar quasi-Yagi antenna are used to achieve RF-local oscillator (RF-LO) isolation between closely spaced frequencies. The balanced mixer is symmetric, inherently broad band, and does not need an RF balun. Pseudomorphic high electron-mobility transistors are used in a 30-GHz push-pull circuit to generate the second harmonic and a 30-GHz dielectric resonator was used to stabilize the fundamental oscillation frequency. This allows the possibility of building a balanced low-cost self-contained antenna integrated receiver with low LO leakage for short-range narrow-band communication. Phase locking can be done with half of the RF frequency. The circuit exhibits a conversion loss less than 15 dB from 60 to 61.5 GHz, radiation leakage of -26 dBm at 60 GHz, and IF phase noise of -95 dBc/Hz at 100-kHz offset     

Quasi-optical integrated antenna and receiver front end

A quasioptical receiver front end applicable to both microwave and millimeter-wave receiver arrays is presented. Two planar microwave integrated circuit (MIC) quasioptical receiver circuit designs that integrate a coupled slot antenna, a Schottky-diode balanced mixer, and a local oscillator on the same substrate are described. The even-mode/odd-mode characteristics of the coupled slotlines are used to achieve intrinsic RF/LO and RF/IF isolation. To demonstrate circuit feasibility, X-band scaled models of the circuit unit using a Gunn-diode oscillator on an Epsilam-10 substrate, and MESFET local oscillator on a R/T Duroid substrate were built and tested. Results of these tests are included     

Highly integrated 60 GHz transmitter and receiver MMICs in a GaAs pHEMT technology

Highly integrated transmitter and receiver MMICs have been designed in a commercial 0.15 /spl mu/m, 88 GHz f/sub T//183 GHz f/sub MAX/ GaAs pHEMT MMIC process and characterized on both chip and system level. These chips show the highest level of integration yet presented in the 60 GHz band and are true multipurpose front-end designs. The system operates with an LO signal in the range 7-8 GHz. This LO signal is multiplied in an integrated multiply-by-eight (X8) LO chain, resulting in an IF center frequency of 2.5 GHz. Although the chips are inherently multipurpose designs, they are especially suitable for high-speed wireless data transmission due to their very broadband IF characteristics. The single-chip transmitter MMIC consists of a balanced resistive mixer with an integrated ultra-wideband IF balun, a three-stage power amplifier, and the X8 LO chain. The X8 is a multifunction design by itself consisting of a quadrupler, a feedback amplifier, a doubler, and a buffer amplifier. The transmitter chip delivers 3.7/spl plusmn/1.5 dBm over the RF frequency range of 54-61 GHz with a peak output power of 5.2 dBm at 57 GHz. The single-chip receiver MMIC contains a three-stage low-noise amplifier, an image reject mixer with an integrated ultra-wideband IF hybrid and the same X8 as used in the transmitter chip. The receiver chip has 7.1/spl plusmn/1.5 dB gain between 55 and 63 GHz, more than 20 dB of image rejection ratio between 59.5 and 64.5 GHz, 10.5 dB of noise figure, and -11 dBm of input-referred third-order intercept point (IIP3).     

Monolithic integrated coherent receiver on InP substrate

The fabrication of a monolithic integrated coherent receiver with a wavelength-tunable DFB laser as local oscillator, a 3-dB waveguide directional coupler for mixing, and p-i-n photodiodes for detection is discussed. Optical heterodyne detection with a clear beat signal was experimentally observed using this monolithic integrated coherent receiver. Since an n-type substrate was used in this device, the two p-i-n photodiodes were not implemented in a balanced mixer configuration. Balanced mixing might be possible if the same structure were fabricated on a semi-insulating substrate. The results obtained suggest the possibility of applying this type of monolithic integrated coherent receiver to optical communication systems     

A V-band quasi-optical GaAs HEMT monolithic integrated antenna and receiver front end

A single-chip monolithic integrated V-band folded-slot antenna with two Schottky-barrier diodes and a local oscillator source is developed as a quasi-optical receiver for the first time. The monolithic microwave integrated circuit consists of a voltage-controlled oscillator (VCO), a coplanar waveguide (CPW)-to-slotline transition, a low-pass filter, a folded-slot antenna, and a 180/spl deg/ single balanced mixer. The chip is fabricated based on the 0.15-/spl mu/m GaAs high electron-mobility transistor technology and the overall chip size is 3/spl times/1.5 mm/sup 2/. A finite-difference time-domain method solver is also developed for analyzing the embedded impedance characteristics of the folded-slot antenna to design the mixer. The chip is placed on an extended hemispherical silicon substrate lens to be a quasi-optical receiver. The performance of the receiver is verified by experimental measurements. The VCO has achieved a tuning range from 61.9 to 62.5 GHz and approximately 9.3-dBm output power. The CPW-to-slotline transition has bandwidth from 50 to 70 GHz. The mixer results in 15-dB single-sideband conversion loss and the receiving patterns of the IF power are also measured.     

High-Bit-Rate Dense SS-WDM PON Using SOA-Based Noise Reduction With a Novel Balanced Detection

The major drawback of incoherent broadband sources (BBSs) is their inherent intensity noise. Semiconductor optical amplifiers (SOAs) can be exploited at the transmitter to mitigate this noise. Optical filtering at the receiver, however, leads to the return of most of suppressed noise. Wider filtering at the receiver is the best known strategy to maintain performance gains, at the price of reduced spectral efficiency due to the tradeoff between noise cleaning and adjacent channel crosstalk. We introduce a novel balanced receiver for wavelength division multiplexing (WDM) systems that maintains greater noise cleaning and leaves spectral efficiency unchanged. Unlike standard receivers, our balanced scheme does not filter the desired signal. In this paper, we first demonstrate that the newly proposed receiver is equivalent to standard WDM receivers when no SOA for noise cleaning is present at the transmitter. Although a 2.9-dB power penalty is incurred, network capacity is unchanged, i.e., bit error rate (BER) floors due to intensity noise are the same. When SOAs are employed to mitigate severe intensity noise, we show that our receiver outperforms the wide filtering strategy by two orders of magnitude. Dense WDM capacity is demonstrated up to 10 Gb/s using a thermal source, a saturated SOA, and the balanced detection scheme. A BER of 10^-6 is achieved at 10 Gb/s; further improvement is possible using low overhead forward error correction or a better SOA design. This demonstrates the ability of spectrum-sliced wavelength division multiplexing (SS-WDM) passive optical networks (PONs) to operate at 10 Gb/s at good spectral efficiency. Error performance better than 10^-9 is achieved up to 8 Gb/s with 30-GHz optical channel bandwidth and 100-GHz spacing.     

A 20-GHz Integrated Balanced Mixer

An integrated balanced mixer for use in the receiver for the quasi-millimeter-wave digital radio transmission system is described. The following aspects of the mixer realization are discussed. 1) The characteristics of gallium arsenide Schottky barrier diodes and three types of diode mount construction are described. The least observed dc incremental conversion loss was about 4 dB in the range of 18-23 GHz. 2) The fabrication of waveguide to microstrip transition, using a ridged waveguide transducer, is described. A transition loss of less than 0.38 dB was obtained in the range of 18-21.75 GHz. 3) The microstrip circuit elements, such as the 3-dB directional coupler and the low-pass filter, are described. The minimum isolation and coupling values of the coupler were about 16 dB and 3-4 dB, respectively. 4) The effect of the undesirable electromagnetic mode propagation on the integrated mixer operations is discussed. 5) The performance of the integrated balanced mixer is presented. This mixer, operated at a signal frequency of 20 /spl plus mn/0.5 GHz and at a local oscillator frequency of 18.3 GHz, showed a single side-band noise figure of 4.8-5.8 dB. 6) The reliability of the mixer is also evaluated with high reliability under vibration and shock testing being exhibited.     

Monolithically integrated polarisation-insensitive high-speedbalanced mixer receiver on InP

A monolithically integrated high-speed balanced mixer receiver on InP is presented for the operation at 1.55 μm wavelength. The detector provides cutoff frequency of 14 GHz and polarisation-insensitive common-mode rejection ratio of better than -20 dB     

Low-Power 2.4-GHz Transceiver With Passive RX Front-End and 400-mV Supply

An ultra low power 2.4-GHz transceiver targeting wireless sensor network applications is presented. The receiver front-end is fully passive, utilizing an integrated resonant matching network to achieve voltage gain and interface directly to a passive mixer. The receiver achieves a 7-dB noise figure and -7.5-dBm IIP3 while consuming 330 muW from a 400-mV supply. The binary FSK transmitter delivers 300 muW to a balanced 50-Omega load with 30% overall efficiency and 45% power amplifier (PA) efficiency. Performance of the receiver topology is analyzed and simple expressions for the gain and noise figure of both the passive mixer and matching network are derived. An analysis of passive mixer input impedance reveals the potential to reject interferers at the mixer input with characteristics similar to an extremely high-Q parallel LC filter centered at the switching frequency     

Monolithic above-IC resonator technology for integrated architectures in mobile and wireless communication

This paper demonstrates the feasibility of an above-IC bulk acoustic wave technology for wireless applications. A double-lattice bulk acoustic wave (BAW) filter with balanced input and output has been designed and integrated as a post-process directly above 0.25 /spl mu/m BiCMOS wafers comprising RF circuits. This filter, featuring moderate insertion loss of -3dB and extreme out-of-band rejection (>-50 dB) is used in a simplified RF front-end receiver for the WCDMA standard, as well as in a new type of filtering LNA comprising two broadband amplifiers and one BAW filter.     

A 10 Gb/s optical heterodyne detection experiment using a 23 GHzbandwidth balanced receiver

A balanced receiver for multigigabit-per-second coherent optical transmission systems is described. A balanced optical receiver with a frequency bandwidth of 23 GHz is achieved by connecting an InGaAs twin-p-i-n photodiode to a 0.5-30.0 GHz GaAs monolithic distributed amplifier fabricated with a soldier bump flip-chip interconnection technique. An experiment which demonstrated that this receiver has the potential for use in 10-Gb/s optical CPFSK (continuous-phase frequency shift keying) heterodyne detection systems was conducted     

A CDMA2000 zero-IF receiver with low-leakage integrated front-end

This paper describes a highly integrated CDMA 2000 US-CEL band (880-MHz) receiver. The single-chip zero-IF design incorporates all receiver signal-path functions including the low-noise amplifier (LNA) on a single die. The complete receiver design exceeds the stringent linearity and local oscillator (LO) leakage requirements for this standard arising from the coexistence with narrow-band FM signals. The integrated LNA achieves 1.0-dB noise figure with +9-dBm IIP3 at high gain, and by maintaining LO leakage to the antenna port well below -80 dBm at all gain settings, no external LNA is required. The receiver is fabricated in a 0.25-/spl mu/m 40-GHz f/sub t/ BICMOS technology, and occupies 3 mm/sup 2/.     

0.5-V 5.6-GHz CMOS Receiver Subsystem

The building blocks of a 0.5-V receiver, including a receiver front-end and a low-pass filter (LPF), are fabricated using 0.18- $mu{hbox{m}}$ CMOS technology. At 5.6 GHz, the receiver front-end achieves a voltage gain of 17.1 dB and a noise figure of 8.7 dB, while dissipating at 19.4 mW. The fifth-order low-pass Chebyshev filter achieves a corner frequency of 2.6 MHz and an input-referred noise of 28.5 nV/sqrt (Hz) at 6.8 mW. The receiver front-end is further integrated with the LPFs to form a highly integrated receiver subsystem at ultra-low voltage.      

InP-based 10-GHz bandwidth polarization diversity heterodynephotoreceiver with electrooptical adjustability

A polarization diversity optical receiver, integrated with two pairs of balanced photodiodes in the InP/InGaAsP material system, is described. This circuit includes two polarization splitters based on modal birefringence and, for the first time, adjustable 3-dB TE and TM directional couplers (relaxing fabrication tolerances). On-chip losses are below 2.5 dB (TE) and 5.5 dB (TM). Waveguide to PIN coupling efficiency is >95%. Polarization crosstalk is in the 9-10-dB range, 3-dB couplers balance can be recovered, and common mode rejection ratio (CMRR) lower than -30 dB is obtained and remains below -20 dB over 6 GHz. Balanced receiver circuit 3-dB bandwidth is in excess of 10 GHz     

可应用于光互连的新型高带宽、高灵敏度差分光接收机的概念提出与设计

提出了一种可应用于高速光通信和光互连的新型高带宽、高灵敏度差分光接收机.其中,高带宽和高灵敏度分别通过输入负载平衡的全差分跨阻前置放大器和将入射光信号转换成一对差分光生电流信号的两个光电探测器来实现.与常用光接收机相比,这种新型光接收机无任何附加成本.设计了一种相应的、与0.35μm标准CMOS工艺完全兼容的光电集成接收机.其中,光电探测器采用面积为60μm×30μm、结电容为1.483pF的插指型p+/n-well/p-substrate光电二极管.仿真结果表明:该光电集成接收机的带宽为1.37GHz;跨阻增益为81.9dBΩ;面积为0.198mm2;数据传输率至少可达2Gb/s;对于215-1位的输入伪随机码序列(PRBS),在误码率为10-12条件下,灵敏度至少可达-13dBm.