六、核分析技术

北京慢正电子强束流依托于北京正负电子对撞机(BEPC)电子直线加速器(LINAC)，利用其完成注入后的剩余时间，产生高强度、高亮度、低能单色正电子束流，应用于材料科学尤其是材料表面特性的研究。该装置的建成弥补了我国现有的基于放射性同位素的慢正电子束流装置正电子强度较弱的不足，拓展了慢正电子技术在材料科学和微观核探针方法学中的应用领域，为进一步建立慢正电子湮没寿命测量、正电子诱导俄歇电子能谱测量以及低能正电子衍射和正电子显微镜等方法奠定了基础。     

脉冲慢正电子束流的直流化装置

在基于加速器的北京慢正电子强束流装置上, 用Penning-Trap技术实现了脉冲慢正电子束流的存储和直流化. 实验表明, 系统的真空度对正电子的存储效率有严重影响, 脉冲正电子的释放方式决定了直流化后束流的能量分散; 改变释放级信号波形以及释放方式可以得到能量分散小于1eV的准直流化慢正电子束流.     

慢正电子束技术在固体表面与界面研究中的应用

综述了慢正电子束技术的发展以及从放射源衰变发射出的慢正电子的慢化原理，概述了利用慢正电子束技术研究固体薄膜表面和界面的基本原理和方法，并讨论了慢正电子束技术在固体薄膜表面和界面研究中的应用。     

北京慢正电子强束流运行性能测试

慢正电子强束流采用高能脉冲电子束流轰击金属钽靶, 以产生正负电子对的方式提供正电子, 作为慢正电子束流方法学研究和薄膜材料缺陷研究的束流基础. 本文是在该装置实现运行后, 对慢正电子束流的强度、能散、形貌等运行性能的测试工作的介绍, 以及慢正电子湮没多普勒测量系统的调试和标准样品的测量结果.     

慢正电子技术在固体表面与界面研究中的应用

综述了慢正电子技术的发展以及从放射源β衰变发射出的慢正电子的慢化原理，概述了利用慢正电子技术研究固体薄膜表面和界面的基本原理和方法，并讨论了慢正电子束技术在固体薄膜表面和界面研究中的应用。     

慢正电子束流技术在金属/合金微观缺陷研究中的应用

正电子湮没谱学技术是研究材料微观结构非常有效的一种核谱学分析方法, 主要用于获取材料内部微观结构的分布信息, 特别是微观缺陷结构及其特性等传统表征方法难以获取的微观结构信息. 近年来, 在慢正电子束流技术快速发展的基础上, 正电子湮没谱学技术在薄膜材料表面和界面微观结构的研究中得到了广泛应用. 特别是该技术对空位型缺陷的高灵敏表征能力, 使其在金属/合金材料表面微观缺陷的形成机理、缺陷结构特性及其演化行为等研究方面具有独特的优势. 针对材料内部微观缺陷的形成、演化机理以及缺陷特性的研究, 如缺陷的微观结构、化学环境、电子密度和动量分布等, 正电子湮没谱学测量方法和表征分析技术已经发展成熟. 而能量连续可调的低能正电子束流, 进一步实现了薄膜材料表面微观结构深度分布信息的实验表征. 本文综述了慢正电子束流技术应用研究的最新进展, 主要围绕北京慢正电子束流装置在金属/合金材料微观缺陷的研究中对微观缺陷特性的表征和表面微观缺陷演化行为的应用研究成果展开论述.     

8—9.5 keV正电子致Ti的K壳层电离截面的实验研究

低能正电子碰撞原子内壳层电离截面的实验数据目前还很缺乏,从而影响了对近年来发展的各相关理论模型的检验,限制了慢正电子束流技术在诸多领域中的应用.本文采用慢正电子束流装置产生的8—9.5 keV正电子束碰撞纯厚Ti靶,利用硅漂移探测器(SDD)收集正电子碰撞Ti靶产生的X射线,同时采用高纯锗探测器在线获得与靶碰撞的入射正电子数,从而得到Ti的K壳层实验产额,并基于蒙特卡罗模拟程序PENELOPE获得模拟产额.将实验产额分别与内壳层电离截面数据库采用经典光学数据模型(ODM)和扭曲波玻恩近似理论模型(DWBA)的蒙特卡罗模拟产额进行对比,发现基于ODM理论模型的模拟产额与实验值有较大的偏差,基于DWBA理论模型的模拟产额与实验结果符合较好.根据实验产额和基于DWBA理论模型的模拟产额的比较结果,对蒙特卡罗模拟程序使用的DWBA理论模型数据库进行修正后再进行模拟和比较,从而得到可靠的8—9.5 keV正电子致Ti原子K壳层电离截面数据.     

基于正电子的反物质研究进展

正电子是最容易获得的反粒子,因而电子-正电子系统最适合研究普通物质与反物质的结合。本文结合最近实验上首次合成物质-反物质分子这个重大发现,介绍反物质(正电子)研究历史、现状及展望;重点讨论基于正电子的捕获、约束、积累等实验技术,以及物质-反物质分子——正电子素分子的合成方法。     

基于正电子的反物质研究进展

正电子是最容易获得的反粒子,因而电子-正电子系统最适合研究普通物质与反物质的结合.本文结合最近实验上首次合成物质-反物质分子这个重大发现,介绍反物质(正电子)研究历史、现状及展望;重点讨论基于正电子的捕获、约束、积累等实验技术,以及物质-反物质分子--正电子素分子的合成方法.     

用于分子束外延的慢正电子束在线分析系统

本文系统地介绍用于分子束外延的慢正电子束在线分析系统的设计与研制,提出用慢正电子束技术在线研究半导体薄膜的分析方法,在正电子慢化器中采用多钨环加百叶窗组合结构,得到较高的快-慢正电子转换效率。 关键词：     

Planned positron experiments at FRM-II

The new research reactor FRM-II near Munich has a strong positron source, which delivers an intense, nearly monoenergetic positron beam. Our positron systems, the pulsed low energy positron source (PLEPS) and the scanning positron microscope (SPM) will be operated at this beam. Some aspects of matching these systems to the new positron source will be discussed.Considerable improvements are expected, e.g. more than 10⁵ s⁻¹ recorded events at PLEPS and sub-micrometre resolution at SPM. They will enable investigations in so far inaccessible problems like the evaluation of annihilation characteristics and trapping constants of individual defects or studies of fast dynamical processes. In applied materials science complex defect structures will be studied which demand a resolution into many differing lifetimes, e.g. fractured specimens, wear, corrosion, etc. Also large series of measurements at small systematic modifications are planned. There is also the opportunity to analyse in addition the chemical microstructure of the specimens by means of a hydrogen microprobe and other ion beam techniques available close to FRM-II at the Technical University of Munich.     

Low-temperature measurements of the fraction of re-emitted positronium from a Cu(111)+S surface

A positron beam has been utilized to measure the positronium (Ps) fraction re-emitted from a Cu(111)+S sample from 40 K to 350 K for incident energies ranging from 0.5 to 5 keV. Our results at 525 eV incident energy are compared with two recent theories from 40 K to 850 K. The Ps fraction shows only a slight positive temperature dependence below room temperature and we conclude that the positron trapping rate and probability of Ps formation at the surface are largely independent of sample temperature for Cu(111)+S. In addition we present evidence that positrons in the bulk material are not localized in shallow traps at low temperatures for well-annealed high-purity single crystals of Cu and Al.     

On the defect pattern evolution in sapphire irradiated by swift ions in a broad fluence range

Sapphire samples, irradiated with swift Kr (245 MeV) ions at room temperature in a broad fluence range, were investigated using a continuous and a pulsed positron beam to study the defect structure created by the passage of the ions in depths of a few micrometers. At small doses, monovacancies were identified as dominant defects and positron trapping centres. These monovacancies are assumed to be highly concentrated inside a cylindrical volume around the ion path with an estimated radius of ∼1.5 nm. For higher doses a second type of trapping centre emerges. This second class of structural imperfection was associated with the overlap of the individual ion tracks leading to the formation of larger vacancy clusters or voids.     

Evolution of vacancy defects and dislocations in surface layers of iron as a result of pulsed electron beam treatment

Using a micro-beam of ions (PIXE, RBS), a slow positron beam, measurements of positron lifetime, TEM and SEM techniques, formation of vacancy defects and dislocations has been found in a near-surface iron layer as a result of pulsed electron beam treatment. It has been shown that as a result of the HCEB treatment regions of a low local electron density are formed, which seem to be “embryos” for craters. In spite of the crater formation and high dislocation density (exceeding 10¹⁰ cm⁻²) in a near-surface layer, we found a decrease in wear resistance to dry friction and an increase in microhardness.     

Stored positrons for antihydrogen production

The production of antihydrogen is examined in the light of recent experimental results on a technique for the efficient accumulation, manipulation, and storage of positrons. From these data, we argue that this high-efficiency positron trapping technique could be adapted for the production of antihydrogen and would offer significant advantages over other positron trapping techniques currently being proposed for this purpose. This revised version was published online in August 2006 with corrections to the Cover Date.     

Performance of the plugged-in 22Na based slow positron beam facility

The Beijing intense slow positron beam facility is based on the 1.3 GeV linac of Beijing ElectronPositron CoUider (BEPC) aiming to produce mono-energetic intense slow positron beam for material science investigation. The plugged-in 22Na based slow positron beam section has been newly constructed to supply continuous beam time for the debugging of positron annihilation measurement stations and improve the Beijing intense slow positron beam time using efficiency. Performance testing result of the plugged-in 22Na based slow positron beam facility are reviewed in this paper, with the measurement of the beam transport efficiency, the view of beam spot, the adjustment of beam position, the measurement of beam intensity and energy spread etc. included.     

Positron Characteristics in Cadmium and Zinc Chalcogenides

Electron energy levels and positron states have been calculated for cadmium and zinc chalcogenide compounds within the pseudo-potential approach and the independent particle model.Furthermore,the present contribution deals with the electron and positron chemical potentials allowing the calculation of the positron affinity to different materials of interest and hetero-structures formed by these materials.Besides,we here determine the positron diffusion constant by means of the positron deformation potential.An attempt has been made to scale positron affinity and diffusion constant with the lattice constant and the band gap energy,respectively.Such scaling is found to be not possible.The information gathered by the present study is of prime importance for a better understanding of positron trapping at interfaces and precipitates and should be useful in slow positron beam experiments.     

New design of the CDB-spectrometer at NEPOMUC for T-dependent defect spectroscopy in Mg

Crystal defects in magnesium and magnesium-based alloys like AZ31 are of major interest for the understanding of their macroscopic properties. Coincident Doppler broadening spectroscopy with positrons (CDBS) is a well-established technique to investigate lattice defects and their chemical surrounding in solids. However, Mg and its alloys are demanding materials for positron spectroscopy, since the trapping rate in Mg is low and the trapping sites are shallow. In order to increase the trapping rate, the CDBS-facility at the high intense positron beam NEPOMUC is currently redesigned and improved with a cryostat for sample cooling. Furthermore, the recently installed remoderator provides a beam energy between 20 and 200 eV. On the contrary to the previous beam energy of 1 keV, the beam is therefore no longer non-adiabatically released from the magnetic field at the grounded field termination. Hence it is necessary to construct an insulated field termination where voltages up to 5 kV can be applied.     

GaN-a new material for positron moderation

GaN with its wide bandgap might be of interest as a positron moderation material in much the same way as SiC is. To investigate this, positron beam experiments have been performed to establish the diffusion behaviour and surface branching of positrons implanted with energies varying from 0 to 25 keV into an epitaxially grown layer of semi-insulating GaN on a sapphire substrate. The measured diffusion length of the positrons amounted to 19.3 ± 1.4 nm. The surface branching ratios were as follows: 48% positron emission, 12% positronium formation and 40% trapping at the surface. The positron workfunction was shown to be negative with a value of 2.4 ± 0.3 eV. The materials feasibility for positron moderation and its possible use in field assisted moderation is discussed.     

ASACUSA MUSASHI: New progress with intense ultra slow antiproton beam

Our group “ASACUSA MUSASHI” has established an efficient way for accumulating antiprotons and extracting them as intense ultra-slow mono-energetic beams at the CERN-AD facility. This novel beam opens new frontiers for investigating a variety of physics. For realizing H? spectroscopy and the test for charge-parity-time symmetry, we have also developed the cusp trap, a combination of an anti-Helmholz superconducting coil and a multi-ring electrode trap, for trapping both antiprotons and positrons and then synthesizing antihydrogens. Recently, the cusp trap was practically used to accumulate antiprotons. The last piece for synthesizing antihydrogens in the cusp trap is the positron accumulator. We have developed a compact system to effectively accumulate positrons based on N₂ gas-buffer scheme with a specially designed high precision cylindrical multi-ring electrode trap. The recent progress of the developing work is an important milestone for upcoming antihydrogen science of ASACUSA MUSASHI.