微波等离子体刻蚀处理对金刚石薄膜涂层刀具附着力和切削性能的影响

用HFCVD法在硬质合金（YG6）刀具衬底上沉积金刚石薄膜,用氢微波等离子体刻蚀的方法对衬底进行表面预处理,研究了该预处理技术对WC硬质合金衬底表面成分的影响,进一步探讨了所沉积金刚石薄膜的表面形貌和附着力,并通过难加工材料实际切削试验。研究了所制备的金刚石薄膜涂层刀具的切削性能。试验结果表明,Ar-H2微波等离子体刻蚀脱碳处理是提高金刚石薄膜附着力和改善涂层刀具切削性能的有效预处理方法。     

基片预处理对MWPCVD金刚石薄膜的影响

利用自行研制的石英钟罩式微波等离子体化学气相沉积金刚石薄膜装置，研究了硅基片的不同预处理方式对沉积结果的影响。通过扫描电子显微镜形貌观察和喇曼谱分析表明，基片预处理能提高形核密度；用于预处理的金刚石研磨膏的粒度不同，影响金刚石薄膜沉积时的形核密度，晶形和薄膜的质量；表面划痕对沉积金刚石薄膜的影响具有双重性。     

基片预处理对MWPCVD金刚石薄膜的影响

利用自行研制的石英钟罩式微波等离子体化学气相沉积金刚石薄膜装置，研究了硅基片的不同预处理方式对沉积结果的影响。通过扫描电子显微镜形貌观察和喇曼谱分析表明，基片预处理能提高形核密度；用于预处理的金刚石研磨膏的粒度不同，影响金刚石薄膜沉积时的形核密度、晶形和薄膜的质量；表面划痕对沉积金刚石薄膜的影响具有双重性。     

微波等离子CVD法在石英玻璃上生长金刚石薄膜

在真空条件下采用氢气刻蚀二氧化硅形成硅膜，用微波等离子化学气相沉积法在玻璃上生长金刚石薄膜，并用X射线衍射、Raman光谱和光电子能谱对石英玻璃上的金刚石薄膜进行分析，指出其形成中间层SiO2/Si/SiC/C（金刚石）是在石英玻璃上生长金刚石薄膜的关键。     

基片位置对微波等离子体合成金刚石的影响

用自制的微波功率为5kW的微波等离子体(MPCVD)装置、用H2/CH4/H2O作为反应气体在较高的沉积气压(12.0kPa)条件下,研究了基片放置在等离子体球边缘附近不同位置对CVD金刚石沉积和生长的影响。结果表明,CVD金刚石的形核和生长对环境的要求是不同的;在等离子体球边缘处不利于金刚石的形核,但有利于高质量金刚石的沉积。     

氧化铝基体表面预处理对金刚石薄膜生长的影响

采用微波等离子体化学气相沉积方法,在经不同预处理的氧化铝衬底上沉积金刚石薄膜.用X射线衍射仪、激光拉曼光谱仪、扫描电镜(SEM)对所得薄膜的成分、物相纯度和表面形貌进行表征,比较不同的预处理方式对金刚石薄膜生长的影响.结果表明,基体表面经过熔融碱腐蚀后形成薄膜的膜基结合良好且膜材质量最佳,但表面平整度较低;而基体只经金刚石微粉乙醇悬浊液超声处理则在沉积时金刚石容易成膜,且结构要更为致密;在经过酸腐蚀的基体上沉积金刚石薄膜时,容易在薄膜与基体之间先形成过渡层,而后才进行金刚石薄膜的沉积.所得结果表明熔融碱腐蚀处理是获得电学应用氧化铝基金刚石薄膜复合材料的最适宜的基体表面预处理.     

形核工艺对金刚石膜形貌和电阻率的影响

金刚石薄膜电阻率的高低是薄膜绝缘性能优劣的直观反映,也是影响辐射剂量计器件性能的重要因素.针对目前形核工艺与电阻率的关系还不十分清楚的问题.本文研究了微波等离子体形核阶段工艺参数如基片位置、微波功率、甲烷浓度的变化对金刚石薄膜的表面形貌和电阻率的影响.结果表明微波等离子体形核工艺参数对金刚石薄膜的电阻率和表面形貌有显著影响.获得的最佳成核工艺条件:基体温度960℃、甲烷浓度0.72%、压力5.3 kPa、微波功率1300 W.在此工艺条件下制得的金刚石薄膜的电阻率值达到1011 Ω·cm数量级.     

氮气对MPCVD法金刚石薄膜性能的影响

在CH4和H2的混合气体中，加入N2，并不断改变其含量，用微波等离子体化学气相沉积（MPCVD）设备制备了金刚石薄膜。利用扫描电镜观察薄膜的表面形貌，用X-ray衍射方法进行物相鉴定，用Raman光谱分析薄膜的纯度。结果表明：氮气含量不同，薄膜的沉积情况也不同，由于氮气含量的变化，薄膜沉积过程中形成一种纳米聚晶金刚石薄膜，本文从氮离子轰击和晶粒生长的角度分析了氮的添加对所制备的金刚石薄膜性能的影响。     

高气压对MPCVD沉积金刚石薄膜的影响

本研究在10 kW微波等离子体CVD装置中进行,以仿真模拟为辅助理论依据研究了在一定的高功率环境下,气压对金刚石薄膜沉积质量的影响。利用SEM表征对金刚石表面形貌变化进行分析,利用Raman表征结果分析了不同气压环境下金刚石薄膜的结晶质量及半高宽的变化情况。研究结果表明,气压对电子密度影响很大,进而影响金刚石沉积薄膜的表面形貌。在5 kW微波功率下,17 kPa为最优沉积气压,沉积形貌相对最好,半高宽最小。当气压低于17 kPa时,结晶质量随气压增大而增大;当超过17 kPa时,结晶质量不增反降。     

衬底表面预处理对金刚石薄膜形核及长大的影响

用燃烧火焰法在 TC4 Ti 合金和单晶 Si(001)面上沉积了金刚石薄膜。对合成的膜进行了扫描电镜、激光喇曼光谱分析。结果表明,金刚石薄膜的结构和形貌强烈取决于沉积温度、O_2/C_2H_2流量比等工艺参数。研究了衬底表面预处理对金刚石薄膜形核及长大的影响,并对表面预处理影响形核的原因进行了初步探讨。     

微波ECR-CVD法制备a-C:F:H膜的红外吸收及其光学带隙

改变CHF3 CH4 流量比R =[CHF3] ([CHF3]+[CH4 ]) ,采用微波电子回旋共振等离子体化学气相沉积 (MWECR CVD)方法沉积a C :F :H薄膜。a C :F :H薄膜的结构和光学带隙使用傅立叶变换红外光谱和紫外 可见光谱来表征。红外结果表明 ,在低流量比R(R <6 4 % )下 ,薄膜的红外特征结构主要以 CF(10 6 0cm- 1 ) , CF2(112 0cm- 1 )以及 CHx(2 80 0～ 30 0 0cm- 1 )的伸缩振动为主 ;在高流量比R(R >6 4 % )下 ,薄膜表现为类聚四氟乙烯(PTFE)的结构特征 ,典型的红外特征峰是位于 12 2 0cm- 1 处的 -CF2 反对称伸缩振动。薄膜的光学带隙Eg 随流量比R的变化表现为先降后升。进一步研究表明 ,薄膜中的H和F浓度调制着薄膜的CC共轭双键结构 ,使光学带隙Eg 从 2 37到 3 3之间变化     

Monolayer to multilayer nanostructural growth transition in N-type oligothiophenes on Au(111) and implications for organic field-effect transistor performance

The evolution in growth morphology and molecular orientation of n-type semiconducting alpha,omega-diperfluorohexyl-quaterthiophene (DFH-4T) on Au(111) is investigated by scanning tunneling microscopy and scanning tunneling spectroscopy as the film thickness is increased from one monolayer to multilayers. Monolayer-thick DFH-4T films are amorphous and morphologically featureless with a large pit density, whereas multilayer films exhibit drastically different terraced structures consisting of overlapping platelets. Large changes in DFH-4T molecular orientation are observed on transitioning from two to four monolayers. Parallel electrical characterization of top-versus-bottom contact configuration DFH-4T FETs with Au source/drain electrodes reveals greatly different mobilities (mu(TOP) = 1.1 +/- 0.2 10(-2) cm(2)V(-1)s(-1) versus mu(BOTTOM) = 2.3 +/- 0.5 10(-5) cm(2)V(-1)s(-1)) and contact resistances (R(C-TOP) = 4-12 MOmegacm vs R(C-BOTTOM) > 1 GOmegacm). This study provides important information on the organic semiconductor-source\drain electrode interfaces and explains why top-contact OFET devices typically have superior performance. By direct visualization, it demonstrates that the DFH-4T film growth transition from monolayer to multilayer on Au is accompanied by dramatic morphology and molecular orientation changes, starting from an amorphous, pitted, and disordered monolayer, to crystalline and smooth bi/tetralayers but with the molecules reoriented by 90 degrees . These chemisorption-derived inhomogenities at the contact-molecule interface and the large monolayer --> multilayer --> bulk microstructural changes are in accord with the large bottom-contact device resistance and poor OFET performance.     

Characterization of ZnO：Al Films Deposited on Organic Substrate by r.f. Magnetron Sputtering

Transparent conducting Al-doped zinc oxide (ZnO:AI) films with good adhesion have been deposited on polyimide thin film substrates by r.f. magnetron sputtering technique at low substrate temperature (25-180℃). The structural, optical and electrical properties of the deposited films were investigated. High quality films with electrical resistivity as low as 8.5×10-4 Ω·cm and the average transmittance over 74% in the wavelength range of the visible spectrum have been obtained. The electron carrier concentrations are in the range from 2.9×1020 to 7.1×1020 cm-3 with mobilities from 4 to 8.8 cm2 V-1s-1. The densities of the films are in the range from 4.58 to 5.16 g/cm-3.     

C60/PVK/CdS纳米粒子功能复合 LB 膜研究

目的 尝试用Ｌａｎｇｍｕｉｒ－Ｂｌｏｄｇｅｔｔ（ＬＢ）技术组装Ｃ６０技术组装Ｃ６０功能复合体系的新方法。方法 采用（ＬＢ）技术制备Ｃ６０／ＰＶＫ／ＣｄＳ花生酸混合ＬＢ膜并利用界面化学反应技术将混合膜与硫化氢气体反应制得Ｃ６０／ＰＶＫ／ＣｄＳ纳米粒子功能复合ＬＢ膜并进行紫外光谱表征。结果 含不同比例Ｃ６０的Ｃ６０ＰＶＫ／ＡＡ体系可以在辐亚相上形成稳定的单层膜并转移到固体基片上得到了ＬＢ多层膜,ＬＢ混     

Transparent and flexible thin-film transistors with channel layers composed of sintered HgTe nanocrystals

Transparent and flexible thin film transistors (TFTs) with channel layers composed of sintered HgTe nanocrystals were fabricated on top of UV/ozone treated plastic substrates and their electrical properties were characterized. A representative TFT with a channel layer composed of sintered HgTe nanocrystals revealed typical p-type characteristics, an on/off current ratio of ～10(3) and a field-effect mobility of 4.1?cm(2)?V(-1)?s(-1). When the substrate was bent until the bending radius of the substrate reached 2.4?cm, which corresponded to a strain of 0.83% that the HgTe thin film experienced, the TFT exhibited an on/off current ratio of ～10(3) and a field-effect mobility of 4.0?cm(2)?V(-1)?s(-1).     

Electrochemical performance of diamond thin-film electrodes from different commercial sources

The electrochemical properties of two commercial (Condias, Sumitomo) boron-doped diamond thin-film electrodes were compared with those of two types of boron-doped diamond thin film deposited in our laboratory (microcrystalline, nanocrystalline). Scanning electron microscopy and Raman spectroscopy were used to characterize the electrode morphology and microstructure, respectively. Cyclic voltammetry was used to study the electrochemical response, with five different redox systems serving as probes (Fe(CN)(6)(3)(-)(/4)(-), Ru(NH(3))(6)(3+/)(2+), IrCl(6)(2)(-)(/3)(-), 4-methylcatechol, Fe(3+/2+)). The response for the different systems was quite reproducibile from electrode type to type and from film to film for electrodes of the same type. For all five redox systems, the forward reaction peak current varied linearly with the scan rate(1/2) (nu), indicative of electrode reaction kinetics controlled by mass transport (semi-infinite linear diffusion) of the reactant. Apparent heterogeneous electron-transfer rate constants, k degrees (app), for all five redox systems were determined from deltaE(p)-nu experimental data, according to the method described by Nicholson (Nicholson, R. S. Anal. Chem. 1965, 37, 1351.). The rate constants were also verified through digital simulation (DigiSim 3.03) of the voltammetric i-E curves at different scan rates. Good fits between the experimental and simulated voltammograms were found for scan rates up to 50 V/s. k degrees (app) values of 0.05-0.5 cm/s were observed for Fe(CN)(6)(3)(-)(/4)(-), Ru(NH(3))(6)(3+/2+), and IrCl(6)(2)(-)(/3)(-) without any extensive electrode pretreatment (e.g., polishing). Lower k degrees (app) values of 10(-)(4)-10(-)(6) cm/s were found for 4-methylcatechol and Fe(3+/2+). The voltammetric responses for Fe(CN)(6)(3)(-)(/4)(-) and Ru(NH(3))(6)(3+/2+) were also examined at all four electrode types at two different solution pH (1.90, 7.35). Since the hydrogen-terminated diamond surfaces contain few, if any, ionizable carbon-oxygen functionalities (e.g., carboxylic acid, pK(a) approximately 4.5), the deltaE(p), i(p)(ox), and i(p)(red) values for the two systems were, for the most part, unaffected by the solution pH. This is in contrast to the typical behavior of oxygenated, sp(2) carbon electrodes, such as glassy carbon.     

微波辐射溶胶-凝胶法制备TiO2薄膜及其降解铬黑T的活性

通过微波辐射溶胶一凝胶法（sol-gel）法在导电玻璃（ITO）基体上制备TiO2纳米薄膜光催化剂，考察不同加热方式、微波时间、酸处理、薄膜层数等对TiO2纳米粒子及薄膜的影响。以可见光谱（UV-VIS）、X射线衍射（XRD）对TiO2薄膜进行了表征，并通过薄膜光催化降解铬黑T溶液的性能进行了研究。实验表明，ITO玻璃表面的TiO2纳米薄膜经HNO3和微波处理后，因协同效应使薄膜的光催化活性大大增强。     

Enhancement of photovoltaic performance in dye-sensitized solar cells with the spin-coated TiO2 blocking layer

The TiO2 thin film layers were introduced with the spin-coating method between FTO electrode and TiO2 photoanode in dye sensitized solar cell (DSSC) to prevent electron back migration from the FTO electrode to electrolyte. The DSSC containg different thickness of TiO2 thin film (10-30, 40-60 and 120-150 nm) were prepared and photovoltaic performances were analysed with /-Vcurves and electrochemical impedance spectroscopy. The maximum cell performance was observed in DSSC with 10-30 nm of TiO2 thin film thickness (11.92 mA/cm2, 0.74 V, 64%, and 5.62%) to compare with that of pristine DSSC (11.09 mA/cm2, 0.65 V, 62%, and 4.43%). The variation of photoelectric conversion efficiency of the DSSCs with different TiO2 thin film thickness was discussed with the analysis of crystallographic and microstructural properties of TiO2 thin films.     

Synthesis and electrical properties of (Bi(1/2)Na(1/2))TiO3 (BNT) ferroelectric thin films by liquid sprayed mist chemical vapor deposition technique

This study aims to synthesize lead-free ferroelectric material, (Bi(1/2)Na(1/2))TiO3 using the Liquid Sprayed Mist Chemical Vapor Deposition (LSMCVD) technique. The mist of precursor solution was vaporized and deposited on two different substrates of Si(100) and (111)Pt/TiO2/SiO2/Si(100) in an oxygen atmosphere. The deposition temperature and time were varied in the range of 400-600 degrees C and 30-90 min. (Bi(1/2)Na(1/2))TiO3 thin film had preferred orientations of (110). The thickness of the thin film deposited was 35-162 nm. The remnant polarization (2Pr) and the dielectric constant were 4.6-16.8 microC/cm2, 325-350, respectively.     

The Influence of Oxygen/Argon Ratio on the Structure and Surface Morphology of GaBa2Cu3O7?δ Films Deposited by RF Magnetic Sputtering

$\mathrm{GaBa}_{2}\mathrm{Cu}_{3}\mathrm{O}_{7\mbox{-}\delta}$ thin films have been grown on CeO₂ cap layer by RF magnetic sputtering with different oxygen/argon partial pressure ratio from 2:1 to 1:5. The CeO₂ cap layers were fabricated by pulse laser deposition (PLD) on YSZ/CeO₂/Ni-5%W alloy substrate and had good properties in structure and surface morphology. We study the relationship between oxygen/argon ratio and the performance of the $\mathrm{GaBa}_{2}\mathrm{Cu}_{3}\mathrm{O}_{7\mbox{-}\delta}$ film in order to find out the optimized deposition condition. The structure and surface morphology of the $\mathrm{GaBa}_{2}\mathrm{Cu}_{3}\mathrm{O}_{7\mbox{-}\delta}$ thin films were measured by X-ray diffraction (XRD), Field emission scanning electron microscope (FE-SEM), Atomic force microscopy (AFM). It was found that the texture and surface performance of $\mathrm{GaBa}_{2}\mathrm{Cu}_{3}\mathrm{O}_{7\mbox{-}\delta}$ film, such as growth orientation, grain roughness, grain size and surface morphology, are deeply affected by the oxygen/argon ratio. And the film??s performance was the best when the oxygen/argon partial pressure ratio is 1:1.