与众不同的SKM系列IGBT功率模块

德国西门康公司生产的ＳＫＭ系列ＩＧＢＴ功率模块，不必使用ＲＣＤ吸收电路，并联时能自动均流，开关损耗不随温度正比地产加，ＳＯＡ曲线为矩形，并具有不必负压关断、短路电流自动抑制、正温度特性且没有寿命刹手特点。本文分析了ＳＫＭ系列ＩＧＢＴ功率模块的特点，并与其它型号ＩＧＢＴ进行了比较。     

具有电流检测功能的IGBTsense研究

本文研究了将电流检测功能集成到ＩＧＢＴ中块ＩＧＢＴｓｅｎｓｅ，对ＩＧＢＴｓｅｎｓｅ的基本结构和等效电路进行了分析，提出了一种适于ＰＳＰＩＣＥ分析的ＩＧＢＴｓｅｎｓｅ模型，并详细给出了确定模型参数的方法。根据该模型对ＩＧＢＴｓｅｎｓｅ的主要特性进行了ＰＳＰＩＣＥ分析。     

IGBT闩锁现象的解析模拟

本文从ＩＧＢＴ发生闩锁的机理出发，推导出ＩＧＢＴ结构中两个寄生双极晶体管的共基极电流放大系数 及ＮＰＮ管基区横向电阻随电流密度变化的解析模型，并据此对条形和矩形元胞结构的ＩＧＢＴ器件编制了闩锁电流分析计算程序，取得了与国外报道相一致的结果。     

IGBT功率开关模块的发展及应用

文章首先概述了ＩＧＢＴ功率开关模块的发展动态，其次总结和比较了第二、第三以及第四代ＩＧＢＴ功率开关模块的各项技术性能参数，最后着重强调了ＩＧＢＴ的使用及使用中的几个关键性问题。     

大功率半桥IGBT模块的锁定效应研究

研究了模块在开关状态的电流电压行为，观测到半桥阻态ＩＧＢＴ模块在导通瞬间发生了锁定效应，利用扫描电镜技术观察到典型类火山口烧毁，同时报道了试验结果和失效分析结果。     

基于IGBT的PWM大功率直流伺服驱动

本文介绍ＩＧＢＴ、ＥＸＢ８４１和ＬＥＭ模块在大功率ＰＷＭ直流伺服驱动系统中的应用和系统抗干扰设计。使用效果表明，基于ＩＧＢＴ的设计，可提高大功率直流伺服系统的可靠性和性能、减小体积、降低成本。     

新型功率器件IGBT研制

本文简述了ＩＧＢＴ的设计技术和制造工艺，对ＩＧＢＴ的Ｉ－Ｖ特性，开关特性及闩锁效应进行了系统的研究，结合实施工艺对ＩＧＢＴ的版 图及工艺进行了优化设计。合作开发了适于制作ＩＧＢＴ的异型厚外延材料，成功地制了１０Ａ／８００Ｖ，２０Ａ／１０５０Ｖ的ＩＧＢＴ芯片，给出了试制样品的测试结果。     

单向导通二极管的选用

单向导通二极管（ＦＷＤ）的反向恢复电流和开关速度等参数,必须与功率晶体管相匹配。本分析了半桥逆变器中ＩＧＢＴ与ＦＷＤ相关波形及其开关能耗,提出了二的匹配要求及选用原则。     

IGBT的栅极驱动

ＩＧＢＴ的栅极驱动是ＩＧＢＴ应用中的关键问题。本文阐明构成ＩＧＢＴ栅极驱动电路的注意事项，基本电路参数的选择原则，还介绍了几种驱动电路实例。     

高压IGBT制造技术的最新动向

阐述了当前２．５～４．５ｋＶ高压ＩＧＢＴ的最新制造技术和典型器件结构，认为高压大电流ＩＧＢＴ器件的开发成功将为未来电力电子技术的发展提供新的机遇和挑战。     

基于有限元仿真的IGBT混合模块的可靠性分析

集成化与微型化是当今电子信息产业发展的特点,其中电子元件的结温与热应力是影响其可靠性的重要因素。硅基IGBT和SiC基续流二极管组成的混合模块广泛应用于城市轨道交通等领域,其可靠性直接影响轨道交通车辆的运行性能。本文建立IGBT混合模块的仿真模型,随着各层材料厚度、焊料空洞大小和位置的变化,计算分析IGBT混合模块的温度与应变变化规律,对模块封装结构进行优化设计。将高热导率石墨烯应用在IGBT混合模块中,仿真分析应用位置不同对模块可靠性的影响,从而进一步优化混合模块的封装结构。通过仿真计算,优化后的IGBT混合模块可将最高结温降低近3℃,最大热应力下降超过30 MPa。     

大功率半导体激光器驱动电源

根据半导体激光二极管的工作特性，设计了一种以VICOR电源为功率模块，以绝缘栅双极晶体管（IGBT）为大功率变换器件的大功率激光二极管驱动电源，该驱民源电路简单，能有效地抑制电源的浪涌冲击，保证了激光二极管不受外界的电干扰。在线保护机制可实时对半导体激光器工作监控，半导体激光器的慢启动电路、温控电路保证了半导体激光器安全工作。该电源已应用于机载激光雷达样机系统中，通过一年多的使用，半导体激光二极管工作正常，性能稳定可靠。     

Mutual and self-aging effects of power semiconductors on the thermal behaviour of DC-DC boost power converter

A shift from conventional to renewable resources has increased the importance of power exploitation via power converters. In this respect, estimating an accurate useful lifetime of power converters plays a major role for the manufacturers and users. This paper touches the issues related to the self and the mutual degradation effects of the power semiconductors such as IGBT and diode on each other in a conventional DC-DC boost converter. By IGBT and diode aging, junction-case thermal resistance, IGBT collector-emitter voltage and diode forward voltage have been increased leading to thermal operating point changes. These changes have a significant effect on the degradation and the useful lifetime of devices. It is shown that by either IGBT or diode aging due to the thermo-mechanical fatigue, an increase in the IGBT or diode junction temperature has been occurred. The results reveal the importance of mutual- and self-aging effects on the reliability assessment. An experimental validation has been also performed via a prototype setup of 200/400V 3000W DC-DC boost converter.     

The robustness of series-connected high power IGBT modules

The behaviour in terms of robustness of series-connected high power IGBT modules is presented, arranged in a topology which ensures voltage balance on IGBT’s and diodes by means of a simple auxiliary circuit applied directly on the high power devices, which are used in hard switching mode. Analyses in terms of IGBT and diode SOA (safe operating area), collector to emitter voltage gradient and short circuit condition are reported as well as an extended experimental characterisation. Both analyses confirm superior switching rating and system reliability, by using two series-connected IGBT in substitution of a single module, same current and double voltage rated. Moreover, thanks the auxiliary circuit presence, the robustness of total system is maintained also in extreme operating conditions.     

IPOSIM-IGBT仿真工具在变频器设计中的应用

IPOSIM是一个功能强大的IGBT仿真工具，能够计算IGBT和续流二极管的开关损耗和导通损耗，仿真其温度分布和结温纹波。本文简单介绍了计算IGBT损耗的基本理论和相关热分析模型以及应用该工具的相关原则。同时，又介绍了了一些最新的功能，如能够比较不同IGBT模块在不同开关频率条件下输出电流能力的大小；自定义负荷能够完成在给定的变频器负荷条件下IGBT的仿真分析。最后给出了一些应用该工具的仿真技巧和实例。     

3300V碳化硅肖特基二极管及混合功率模块研制

基于数值仿真结果,采用结势垒肖特基(JBS)结构和多重场限环终端结构实现了3 300 V/50 A 4H-SiC肖特基二极管(SBD),所用4H-SiC外延材料厚度为35 μm、n型掺杂浓度为2× 1015cm-3.二极管芯片面积为49 mm2,正向电压2.2V下电流达到50 A,比导通电阻13.7 mΩ· cm2;反偏条件下器件的雪崩击穿电压为4 600 V.基于这种3 300 V/50 A 4H-SiC肖特基二极管,研制出3 300 V/600 A混合功率模块,该模块包含24只3 300 V/50 A Si IGBT与12只3 300 V/50 A 4H-SiC肖特基二极管,SiC肖特基二极管为模块的续流二极管.模块的动态测试结果为:反向恢复峰值电流为33.75 A,反向恢复电荷为0.807 μC,反向恢复时间为41 ns.与传统的Si基IGBT模块相比,该混合功率模块显著降低了器件开关过程中的能量损耗.     

160mW大功率固态调制器的设计与实验

为提高脉冲调制器的可靠性,设计了基于大功率绝缘栅双极性晶体管模块为开关的大功率固态调制器系统.调制器采用加法器结构,设计输出脉冲功率160 mW,脉冲电压80 kV,脉冲电流2kA.详细介绍了大功率调制器的电路拓扑和系统参数,重点阐述了大功率调制器的组件电路.介绍了绝缘栅双极性晶体管的驱动电路,给出了组件的输出波形,进...     

High-speed electro-thermal modelling of a three-phase insulated gate bipolar transistor inverter power module

In this article, a high-speed electro-thermal (ET) modelling strategy to predict the junction temperature of insulated gate bipolar transistor (IGBT) devices of a three-phase inverter power module is presented. The temperature-dependent power loss characteristics of IGBT and diode devices are measured and stored in lookup tables, which replace the conventional complicated physics-based compact models. An inverter is modelled as a voltage controlled voltage source, which allows the inverter-based power train simulation to be carried out in the continuous time domain with a large simulation time-step (1 ms). Using the simulated sinusoidal voltage and current components of the inverter output, the given pulse width modulation mode, the conduction time (duty ratio) and the current of the devices are extracted. Based on the lookup tables, on-times and conduction currents of devices, the average power loss over each simulation time-step is calculated, which is then fed into the inverter thermal model to predict the devices' temperatures. The advantage of the proposed model is that an accurate ET simulation of inverter for long real-time (many minutes) operation can be carried out within an acceptable computational time using a standard modern personal computer. Both simulation and experimental validation have been carried out, and an excellent agreement has been achieved between the simulation and experimental data.     

Investigation of artificial neural network algorithm based IGBT online condition monitoring

Reliability of Insulated Gate Bipolar Transistor (IGBT) has drawn much attention in recent years. Online monitoring of IGBT is an effective mehod to improve IGBT operation reliability. State-of-the-art online monitoring methods for IGBT are based on thermal sensitive electrical parameters (TSEPs) extraction, but the TSEPs can be hardly obtained with required accuracy in practical application. This paper investigates Artificial Neural Network (ANN) based IGBT online monitoring method. DC link voltage and H-bridge output voltage, which are practical measurable parameters, are selected as the input of ANN. Both single input single output (SISO) and multiple input single output (MISO) neural networks are analysed and discussed. With the proposed method, the relationship of the practical measurable parameters and investigated TSEP, on-resistance of IGBT, can be established. By applying the existing criterion of TSEPs for the IGBT reliability, the prediction of the IGBT failure can be achieved. Simulations verify that the errors brought by the established model are within precision requirements.