注入锁定光纤环形腔激光器实验研究

利用注入锁定技术,将中心频率稳定、窄线宽的DFBLD作为主激光器,将光纤环形腔激光器作为从激光器。在实现注入锁定后,利用光纤环形腔谐振特性,在效压窄了注入光线宽。得到了中心频率稳定,较之DFBLD线宽更窄的输出激光,目前线宽已被压窄到70kHz。     

一种新颖的自反馈光注入单频窄线宽光纤激光器

报道一种基于自反馈光注入的单频窄线宽光纤激光器。激光器采用线形腔结构,用高掺杂Er3+光纤作为增益介质,利用输出信号光分束反馈与腔内振荡激光干涉,形成折射率光栅与增益光栅共同作用选择纵模,获得稳定的1 549.85 nm单频窄线宽激光输出。在975 nm单模激光二极管(LD)抽运下,激光器的抽运阈值光功率为13 mW。当抽运光功率为112 mW时,最大输出信号光功率为30.6 mW,对应的光-光转换效率为27.3%,斜率效率为30.2%,信噪比大于50 dB。采用延时自外差方法测量线宽,当使用30 km单模光纤延迟线时,测量得到激光器的3 dB线宽为4.0 kHz。     

DFB半导体激光器自注入锁定失稳因素分析

分布反馈(Distributed Feedback, DFB)半导体激光器具有体积小、成本低和工艺成熟等优势,但兆赫兹量级的线宽使其应用范围受限。采用环形谐振器对其进行自注入锁定,可将线宽压窄到千赫兹量级,但仍存在锁定不稳定的问题。文章采用四只不同的环形谐振器对DFB半导体激光器进行自注入锁定,通过实验监测自注入锁定时多个端口的光功率、偏振态和光波长的变化,揭示影响DFB半导体激光器自注入锁定稳定性的因素有谐振模式跳变、偏振态跳变,以及外界温度和振动引起的锁定环路的相位变化,且使用不同类型的环形谐振器进行锁定时,主导的影响因素不同。控制这些影响因素可以改善DFB半导体激光器自注入锁定的稳定性,使DFB半导体激光器自注入锁定技术有更好的应用效果。     

高稳定度窄线宽激光器的研究

介绍了3种不同类型的高稳定度窄线宽激光器的研究进展.基于Littman结构和饱和吸收光谱稳频技术,研制了稳频外腔半导体激光器系统,输出波长为780.2 nm,频率稳定度1 MHz,不失锁时间大于12 h.利用边带稳频技术将分布反馈(DFB)激光器的输出波长稳定在Cs原子的吸收谱线的边带处,引入数字信号处理器(DSP)全数字稳频控制技术,实现了自动找频和稳频,获得波长为852.3 nm的稳频激光输出,24 h内频率漂移为±2 MHz.利用国产磷酸盐玻璃光纤作为增益介质,实现了一台高功率单纵模光纤激光器,制作的厘米级激光器实现了最大输出功率100 mW,利用外部光反馈实现单偏振运转,测得输出线宽为2 kHz,偏振消光比优于35 dB.     

超窄线宽激光器研究取得重大进展

由中科院武汉物理与数学研究所高克林研究员带领的离子阱研究小组将钛宝石激光成功锁定到超稳腔上，实现了超窄线宽激光。这是我国首次实现将线宽为50kHz的钛宝石激光锁定在ULE超稳腔上。据理论上估测，其线宽已压窄到Hz量级．标志着我国在超窄线宽激光器研究领域已接近国际同等水平．基本掌握了PDH（Pound—Drever—Hall）稳频的先进技术。     

基于表面曲线光栅的高功率窄线宽半导体激光器

随着智能感知技术的快速发展，高功率、窄线宽的半导体激光光源成为研究热点。通过在边发射半导体激光器件表面引入高阶曲线光栅，设计了一种独特的非稳谐振腔结构，可实现高功率和窄线宽。采用紫外光刻和电感耦合等离子体（ICP）刻蚀技术，制备了周期为6.09μm、占空比为0.66、刻蚀深度为500 nm的曲线光栅。在室温条件下，测得腔长为2 mm的器件的阈值电流为220 mA，连续输出功率为1.48 W，斜率效率为0.63 W/A。比较了法布里-珀罗激光器、直线光栅分布式反馈（DFB）激光器和曲线光栅DFB激光器的光谱，结果表明，曲线光栅对半导体激光器的模式选择起到了关键作用，有利于实现高功率DFB激光器的窄线宽单模输出。该器件具有制作工艺相对简单、性能优异、可靠性高等特点，具有广阔的应用前景。     

DFB光纤激光器

KoherasA/S公司生产的窄线宽、可调谐分布反馈光纤激光器采用热技术和压电技术 ,具有波长调谐或波长稳定的功能。AdjustikC1 5型激光器的工作波长范围为 1 .0 2～ 1 .2 0 μm和 1 .5 2～1 .61 μm ,具有线宽为 1kHz,>30 0pm慢速调谐及1 0kHz带宽时 1 0 0 pm快速调谐能力。该激光器需用的 1 1 0V/2 2 0V电源可从原始设备制造商处作为成套设备的部件获得 ,并带有集成控制电子线路。其应用包括光谱测量、频率锁定、传感器干涉及测试测量设备 ,如光学频谱域反射计等。(No .2 7)DFB光纤激光器…     

移频延时自外差法的DFB激光器线宽测量

为了测量分布反馈（DFB）单模半导体激光器线宽,采用一种新颖的基于马赫-曾德尔干涉结构的光纤自外差测量方案,设计了一套全光纤延时自外差法测量系统,并进行了理论分析。在此基础上搭建了延时光纤长度分别为900m,3000m和6000m的窄带线宽测量系统,对实验室一台中心波长为1550nm、标称线宽值为800kHz的DFB单模半导体激光器光源进行了测试,测得激光器线宽值分别为951.566kHz,832.471kHz和802.221kHz,并对所设计的方案进行了模拟仿真验证。结果表明,与模拟仿真结果作对比,延时光纤长度为6000m时的窄带线宽测量系统最优,其误差在3%之内,证明了所用自外差干涉原理的合理性和准确性。全光纤移频延时自外差法对测量DFB激光器线宽具有优越性和重要的实用价值。     

窄线宽半导体激光器件

分布反馈半导体激光器的线宽一般较大，难以满足光纤传感等领域的要求。根据C.H. Henry于1982年提出的半导体激光器的线宽理论，通过适当设计DFB半导体激光器的腔长、耦合系数、微分增益、光限制因子，能有效地减小激光器的线宽。同时，空间烧孔现象也可限制DFB半导体激光器的线宽，为此需要合理设计光栅结构。在此基础上，DFB激光器的线宽能达到几十千赫兹的量级。此外，采用DBR结构或者外腔结构，也可以获得相当窄的线宽。     

窄线宽激光技术研究进展（特邀）

激光线宽作为表征激光相干性的重要参数,自激光技术诞生以来就备受人们关注。窄线宽激光器由于光谱纯度高、相干长度长、相位噪声低等优点,被广泛应用于引力波探测、冷原子物理、相干光通信、光学精密测量,以及微波光子信号处理等领域。随着现代信息技术的发展,窄线宽激光器作为这些应用的核心光源,在固有的线宽、噪声等参数得到进一步优化的同时也被期望拥有一些新的性能,如参数的极致调控、时频超稳、波长调谐,以及波长扫描等。激光本征线宽源于自发辐射噪声,激光器线宽压缩的发展历程是研究人员与自发辐射噪声对抗的历程。纵观窄线宽激光的发展历史,激光腔构型从简单的两个反射镜构成的单主腔、多布拉格反射面（DBR）构成的单主腔、分布反馈（DFB）结构构成的单主腔,到激光单主腔加固定单外腔,再到波长自适应分布弱反馈激光构型,其核心思想都是利用反馈信号对自发辐射噪声进行抑制。本文以激光主腔构型的演化发展为叙述脉络,总结窄线宽激光技术的研究进展,对比激光谐振腔构型在激光线宽压缩、噪声抑制思想上的异同,最后重点介绍新近发展的波长自适应分布弱反馈窄线宽激光器,对该类新型激光器的物理思想、核心器件和系统性能进行分析和讨论。     

High-performance phase locking of wide linewidth semiconductorlasers by combined use of optical injection locking and opticalphase-lock loop

The requirement for narrow linewidth lasers or short-loop propagation delay makes the realization of optical phase-lock loops using semiconductor lasers difficult. Although optical injection locking can provide low phase error variance for wide linewidth lasers, the locking range is restricted by stability considerations. Theoretical and experimental results for a system which combines both techniques so as to overcome these limitations, the optical injection phase-lock loop (OIPLL), are reported. Phase error variance values as low as 0.006 rad ² (500 MHz bandwidth) and locking ranges exceeding 26 GHz were achieved in homodyne OIPLL systems using DFB lasers of summed linewidth 36 MHz, loop propagation delay of 15 ns and injection ratio less than -30 dB. Phase error variance values as low as 0.003 rad² in a bandwidth of 100 MHz, a mean time to cycle slip of 3×10¹⁰ s and SSB noise density of -94 dBc/Hz at 10 kHz offset were obtained for the same lasers in an heterodyne OIPLL configuration with loop propagation delay of 20 ns and injection ratio of -30 dB     

Five wavelength DFB fibre laser source for WDM systems

Singlemode UV-induced distributed feedback (DFB) fibre lasers with a linewidth of <15 kHz and a sidemode suppression better than 61 dB are presented. The stability of the lasers is verified by a 10 Gbit/s transmission experiment. Five DFB fibre lasers are cascaded and pumped by a single semiconductor laser, thereby forming a multiwavelength source for WDM systems     

Static and dynamic properties of injection-locked semiconductorlasers

The static and dynamic properties of injection-locked semiconductor lasers considering the influence of nonlinear gain are presented systematically. Depending on locking conditions, the modulation bandwidth of a semiconductor laser may be increased or decreased by external light injection. However, the relaxation resonance frequency and the damping rate as defined for a solitary Fabry-Perot (FP) laser are always enhanced by injection locking. That is, contrary to that in a solitary FP laser, the modulation bandwidth in an injection-locked laser is not determined solely by the relaxation resonance frequency, because an injection-locked laser is a third-order system. Therefore, a new definition of the modulation bandwidth is presented for such a laser. The performances of injection-locked distributed feedback (DFB) lasers are also discussed. The theory is in good agreement with the experiments     

Chirp reduction of directly modulated semiconductor lasers at 10Gb/s by strong CW light injection

The influence of strong light injection on the reduction of the dynamical linewidth broadening of directly current-modulated semiconductor lasers at high bit rates is theoretically investigated and experimentally verified for 10 Gb/s NRZ pseudorandom modulation with a large current swing of 40 mA pp. Significant chirp reduction and single-mode operation are observed for bulk DFB, quantum well DFB lasers at 10 Gb/s and a weakly coupled bulk DFB laser at 8 Gb/s, so that an improvement of the transmission performance using standard monomode fibers in the 1.55 μm low-loss wavelength region can be achieved for all these laser types, where dispersion otherwise causes severe penalties for long-haul transmission. The properties of injection-locked bulk DFB and quantum well DFB lasers with respect to high bit rate modulation have been systematically studied by the use of the rate equation formalism. A dynamically stable locking range of more than 30 GHz under modulation has been found for both laser types with injection ratios higher than 0.5     

Dynamic and noise properties of tunable multielectrodesemiconductor lasers including spatial hole burning and nonlinear gain

A general formalism based on the Green's function method is given for multielectrode semiconductor lasers. The effects of both spatial hole burning and nonlinear gain are included in this formalism. An effective nonlinear gain is introduced by taking into account the influence of the laser structure and the associated distribution of the mode intensity along the cavity length and the frequency and intensity modulation properties of multielectrode semiconductor lasers are studied. A general linewidth expression which includes contributions from spontaneous emission and carrier shot noise is given. It is found that the effective α-factor affecting the linewidth is in general different from its counterpart affecting modulation and injection locking properties due to spatial hole burning and nonlinear gain. The linewidth due to various contributions is calculated for both uniform intensity distributed lasers and phase-shifted distributed feedback (DFB) lasers     

Novel measurement technique of alpha factor in DFB semiconductor lasers by injection locking

A simple and accurate method to measure the linewidth enhancement factor alpha in DFB semiconductor lasers is proposed. This method, based on the principle of external optical injection locking, does not require the knowledge of the absolute value of optical injection level.<>     

Fabry-Perot semiconductor laser injection locking

Injection locking of a semiconductor laser is studied using a Fabry-Perot (FP) model. For low injection powers the FP model gives the same results as the rate equation model. At higher injection powers, the FP laser has an unlimited injection locking bandwidth; however, regions of the bandwidth are dynamically unstable. The influence of the linewidth enhancement factor on injection locking and its stability are also studied using the FP model. Finite values of the linewidth enhancement factor lead to increased locking bandwidth, asymmetry in the locking range and a saddle-node bifurcation in the injection locked solutions, of which only lower carrier density arm has linearly stable solutions.