A 70-Mbit/s (RZ) 16×16 crosspoint switch for ternary-encodedsignals

An experimental 16×16 crosspoint switch that can switch ternary signals and handle data rates of up to 70 Mb/s return-to-zero (RZ) (equivalent to 140-Mb/s nonreturn-to-zero (NRZ)) per channel is described. Ternary signals, in particular, alternate mark inversion (AMI) encoded signals, are widely used in telephone interoffice digital-transmission systems. This chip could be used in an asynchronous cross-connection system at the DS3 (44.736-Mb/s) signal level. This crosspoint chip has 16 input and 16 output channels. Any input can be connected to any output or outputs without blocking. The architecture allows for paralleling many chips to increase the size of the crosspoint array and also for cascading them to provide multistage switching capability. The switch can be addressed in the same way as a memory chip, and the cross-connection map can be written to and read back from the device. The chip is fabricated using a standard 2-μm CMOS technology, and the die size is 20.16 mm² (177.2×176.4 mil), containing about 11000 transistors     

A synchronous phase-lock loop detector for integrated AM radio

A synchronous phase-lock loop AM detector has been realized on a single chip in a bipolar process with an f/SUB T/ of 400 MHz. The circuit accepts input signals at an IF frequency of 450-500 kHz with effective values between 20 and 100 mV. The phase-lock loop capture range is about 150 kHz. AM signals with over 80% modulation depth can be demodulated with less than 1% harmonic distortion in the audio output signal. The power dissipation of the chip is 120 mW at 8 V. The total chip size is 1900/spl times/1300 /spl mu/m/SUP 2/. Since the VCO and the 90/spl deg/ phase shift are completely realized on-chip, large signals at the IF frequency do not occur at the pins of the IC, and parasitic feedback of such signals to the IF amplifier input is minimized.     

2.5 Gb／s 16：1 MUX IC Design with CMOS

A low--power and high--speed 16.-1 MUX IC designed for optical fiber communication based on TSMC 0.25μm CMOS technology is presented. A tree—type architecture was utilized. The output data bit rate is 2.5 Gb/s at input clock rate of 1.25 GHz. The simulation results show that the output signal has peak—to—peak amplitude of 400 mV, the power dissipation is less than 200 mW and the power dissipation of core circuit is less than 20 mW at the 2.5 Gb/s standard bit rate and supply voltage of 2.5 V. The chip area is 1.8mm^2.     

A 10-Gb/s 16:1 multiplexer and 10-GHz clock synthesizer in0.25-μm SiGe BiCMOS

A 10-Gb/s 16:1 multiplexer, 10-GHz clock generator phase-locked loop (PLL), and 6 × 16 b input data buffer are integrated in a 0.25-μm SiGe BiCMOS technology. The chip multiplexes 16 parallel input data streams each at 622 Mb/s into a 9.953-Gb/s serial output stream. The device also produces a 9.953-GHz output clock from a 622- or 155-MHz reference frequency. The on-board 10-GHz voltage-controlled oscillator (VCO) has a 10% tuning range allowing the chip to accommodate both the SONET/SDH data rate of 9.953 Gb/s and a forward error correction coding rate of 10.664 Gb/s. The 6 × 16 b input data buffer accommodates ±2.4 ns of parallel input data phase drift at 622 Mb/s. A delay-locked loop (DLL) in the input data buffer allows the support of multiple input clocking modes. Using a clock generator PLL bandwidth of 6 MHz, the 9.953-GHz output clock exhibits a generated jitter of less than 0.05 UI_P-P over a 50-kHz to 80-MHz bandwidth and jitter peaking of less than 0.05 dB     

Integrated switched-capacitor low-pass filter with combined anti-aliasing decimation filter for low frequencies

A new combined antialiasing decimation filter is presented which allows the implementation of a low-frequency switched-capacitor filter on a single chip. Experimental results are presented for a CMOS second-order low-pass filter with 1 dB passband ripple, a cutoff frequency of 2 Hz, and a dynamic range of 84 dB. The decimation filter converts the input clock of 16 kHz into an output clock of 250 Hz. The integrated anti-aliasing filter has a low pole frequency of about 3 kHz.     

A Millimeter-Wave (40–45 GHz) 16-Element Phased-Array Transmitter in 0.18-$mu$ m SiGe BiCMOS Technology

This paper demonstrates a 16-element phased-array transmitter in a standard 0.18-mum SiGe BiCMOS technology for Q-band satellite applications. The transmitter array is based on the all-RF architecture with 4-bit RF phase shifters and a corporate-feed network. A 1:2 active divider and two 1:8 passive tee-junction dividers constitute the corporate-feed network, and three-dimensional shielded transmission-lines are used for the passive divider to minimize area. All signals are processed differentially inside the chip except for the input and output interfaces. The phased-array transmitter results in a 12.5 dB of average power gain per channel at 42.5 GHz with a 3-dB gain bandwidth of 39.9-45.6 GHz. The RMS gain variation is < 1.3 dB and the RMS phase variation is < for all 4-bit phase states at 35-50 GHz. The measured input and output return losses are < -10 dB at 36.6-50 GHz, and <-10 dB at 37.6-50 GHz, respectively. The measured peak-to-peak group delay variation is plusmn 20 ps at 40-45 GHz. The output P_-1dB is -5plusmn1.5 dBm and the maximum saturated output power is - 2.5plusmn1.5 dBm per channel at 42.5 GHz. The transmitter shows <1.8 dB of RMS gain mismatch and < 7deg of RMS phase mismatch between the 16 different channels over all phase states. A - 30 dB worst-case port-to-port coupling is measured between adjacent channels at 30-50 GHz, and the measured RMS gain and phase disturbances due to the inter-channel coupling are < 0.15 dB and < 1deg, respectively, at 35-50 GHz. All measurements are obtained without any on-chip calibration. The chip consumes 720 mA from a 5 V supply voltage and the chip size is 2.6times3.2 mm².     

A Large 16*16 IF Analog Switch Matrix for Personal Communications Satellites

A 16 input and 16 output channels single chip intermediate frequency range (160 MHz) analog switch matrix for personal communication satellites has been designed and processed by using a commercial 1.2 µm BiCMOS technology. The circuit has low power consumption (,2W) and low insertion loss with maximum output power of 0 dBm.     

A 16 × 16 Cellular Neural Network Universal Chip: The First Complete Single-Chip Dynamic Computer Array with Distributed Memory and with Gray-Scale Input-Output

This paper presents a 16 × 16 Cellular Neural Network Universal Chip with analog input and output ports, which can read in and process gray-scale images in the analog domain. The chip contains about 5,000 analog multipliers and has been fabricated in a 0.8 µm CMOS process.     

2.5Gb/s 16:1MUX IC Design with CMOS

A low-power and high-speed 16:1 MUX IC designed for optical fiber communication based on TSMC 0.25 μm CMOS technology is presented. A tree-type architecture was utilized. The output data bit rate is 2.5 Gb/s at input clock rate of 1.25 GHz. The simulation results show that the output signal has peak-to-peak amplitude of 400 mV, the power dissipation is less than 200 mW and the power dissipation of core circuit is less than 20 mW at the 2.5 Gb/s standard bit rate and supply voltage of 2.5 V. The chip area is 1.8 mm2.     

CMOS limiting amplifier for SDH STM-16 optical receiver

A 2.5 Gbit/s limiting amplifier is realised in a 0.35 μm CMOS technology. At a supply voltage of 5 V, the power dissipation is 225 mW. The input dynamic range is about 40 dB at a constant output voltage swing (400 mVp-p). The chip area is 1×1.1 mm²     

17 GHz broadband amplifier with 25 dB gain using a 0.3 μmAlGaAs/GaAs/AlGaAs HEMT technology

A broadband amplifier chip based on AlGaAs/GaAs/AlGaAs quantum well FETs with 0.3 μm gate length has been designed and fabricated. The amplifier can be operated with single-ended or differential inputs with an input resistance of 50 Ω. The output signals are differential with both internal load resistances at 100 Ω, the chip area is 1×1 mm², and the power consumption is ~375 mW     

DDFSGEN

This paper presents a functional compiler for the automatic design of Direct Digital Frequency Synthesizer (DDFS) integrated circuits (ICs) using a ROM based table look-up architecture. The compiler allows the user to specify high-level specifications such as the acceptable spurious response and it generates the IC architecture, floorplan, and layout. To construct the layout for different specifications, a library of parameterized macrocells has been developed in 1.2 μm CMOS technology. A test chip with a quadrature DDFS module has been generated, using the compiler, and fabricated. The chip has two input signals: one is for frequency control while the other is for phase initialization. Input and output word lengths are 16 bits and 6 bits respectively. The chip complexity is approximately 12,000 transistors (DDFS core) and the die size is 4.8×2.9mm ². A maximum sample rate of 80 MHz has been attained implying a maximum sine (cosine) output frequency of 40 MHz and a frequency resolution of 1.22 kHz. The maximum spurious level measured is ?46 dB.     

A variable gain amplifier with 50-dB control range for 900-MHz applications

A variable gain amplifier for 900-MHz applications has been designed and fabricated in a BiCMOS process with f/sub T/ = 24 GHz. The amplifier has linear-in-dB gain control with a 50-dB control range. The maximum gain is 28 dB and the third-order output intercept point (OIP3) is 13.7 dBm. The gain is achieved in one gain stage with a cascoded output. The amplifier bias network and the gain-control circuitry are temperature compensated for temperature-independent gain at any gain setting. The bias network also uses a feedback loop to cancel out undesired low frequencies present at the radio-frequency input. The maximum output power is +10 dBm and the output 1-dB compression point is +8.7 dBm. Active chip area is 0.1 mm/sup 2/. The amplifier is packaged in a SOT-363 and consumes 30 mA from a 2.8-V supply.     

An enhanced 16K E/SUP 2/PROM

An enhanced 16K E/SUP 2/PROM is described. It makes the E/SUP 2/PROM to microprocessor interface simple to implement. It frees up the system bus during e/SUP 2/PROM programming by latching addresses, data, and all control signals on chip. It provides minimum ERASE/WRITE, time via a novel feedback subsystem that monitors the amount of charge on the floating gate of the cell and signals to the system by the READY/BUSY output pin when enough charge has been added to or removed from the gate. With an external V/SUB pp/ voltage fixed supply, the E/SUP 2/PROM generates its own RC ramp during ERASE/WRITE, increasing the endurance of the storage cell. On-chip control circuitry provides ERASE before WRITE, making writing appear as a single step to the user.     

A programmable CORDIC chip for digital signal processingapplications

A chip implementing the coordinate rotation digital computer (CORDIC) algorithm is described. It contains a 10-MHz 16-b fixed-point CORDIC arithmetic unit, 2-kb RAM, a controller, and input/output (I/O) registers. A modified data-path architecture allows cross-wire free data flow. The chip design involved development of optimized carry-select adders and a modified programmable-logic-array (PLA) cell layout, which allows speed increase in single-layer metal technology. The authors designed, fabricated, and tested a general-purpose fully parallel programmable CORDIC chip in CMOS technology and developed optimal iteration sequences     

A monolithic 16-channels analog array normalizer

A monolithic circuit has been developed which accepts 16 parallel voltage inputs having values which may be as small as 15 mV or as large as 15 V, and generates 16 concurrent output voltages which are in the same ratios as the inputs with a peak amplitude controllable by the user. Response time is in the region of 1 /spl mu/s at full scale. The chip includes provisions for expansion to any number of channels. Operation is from supplies of /spl plusmn/3 to 15 V at a quiescent current of 125 /spl mu/A. Details of the design principles and peripheral circuitry are provided. Measurements of static accuracy and dynamic performance demonstrate that this approach may often simplify preprocessing of signal arrays in pattern-recognition applications.     

A monolithic 64 bit floating-point coprocessor

A double/single-precision floating-point processor using a titanium disilicide 3.5-/spl mu/m NMOS process achieves double-precision add/subtract, multiply, and divide in 2, 8, and 16 /spl mu/s respectively. The chip has about 35K devices and is about 400 mil on the side. The chip uses a single 5-V supply with TTL-compatible levels on all signals except for the clocks, which require 4.5 V for a logic high. Four input clocks are used to generate eight 50-ns intervals. A -2.5 V substrate bias generator is designed on the chip but uses a pin for an external capacitor. The processor, which is to be used in a desktop implementation of a minicomputer, executes the floating-point instruction set for the micro-Eclipse computer.     

DDFSGEN

This paper presents a functional compiler for the automatic design of Direct Digital Frequency Synthesizer (DDFS) integrated circuits (ICs) using a ROM based table look-up architecture. The compiler allows the user to specify high-level specifications such as the acceptable spurious response and it generates the IC architecture, floorplan, and layout. To construct the layout for different specifications, a library of parameterized macrocells has been developed in 1.2 m CMOS technology.A test chip with a quadrature DDFS module has been generated, using the compiler, and fabricated. The chip has two input signals: one is for frequency control while the other is for phase initialization. Input and output word lengths are 16 bits and 6 bits respectively. The chip complexity is approximately 12,000 transistors (DDFS core) and the die size is 4.8×2.9mm ². A maximum sample rate of 80 MHz has been attained implying a maximum sine (cosine) output frequency of 40 MHz and a frequency resolution of 1.22 kHz. The maximum spurious level measured is –46 dB.     

A 16-GHz Triple-Modulus Phase-Switching Prescaler and Its Application to a 15-GHz Frequency Synthesizer in 0.18-μm CMOS

A triple-modulus phase-switching prescaler for high- speed operations is presented in this paper. By reversing the switching orders between the eight 45deg-spaced signals generated by the 8 : 1 frequency divider, the maximum operating frequency of the prescaler is effectively enhanced. With the triple-modulus switching scheme, a wide frequency covering range is achieved. The proposed prescaler is implemented in a 0.18-mum CMOS process, demonstrating a maximum operating frequency of 16 GHz without additional peaking inductors for a compact chip size. Based on the high-speed prescaler, a fully integrated integer-N frequency synthesizer is realized. The synthesizer operates at an output frequency from 13.9 to 15.6 GHz, making it very attractive for wideband applications in Ku-band. At an output frequency of 14.4 GHz, the measured sideband power and phase noise at 1-MHz offset are -60 dBc and -103.8 dBc/Hz, respectively. The fabricated circuit occupies a chip area of 1 mm² and consumes a dc power of 70 mW from a 1.8-V supply voltage