Design and Application of Silicon on Insulator Based SiGe VTFET in IIR Filter by Balanced Truncation (BT) Method of Model Order Reduction

Silicon - In this paper, N-type and P-Type low power SiGe Silicon on Insulator Vertical TFET (SOI-VTFETs) are designed and then their drain current is investigated. The designed structures are...     

Characteristic Enhancement of Hetero Dielectric DG TFET Using SiGe Pocket at Source/Channel Interface: Proposal and Investigation

Silicon - This paper reports a method to suppress the ambipolar effect and enhance the on-state current in Tunnel Field Effect Transistor by exploiting the advantages of Silicon-Germanium (SiGe)....     

Analysis of D.C Parameters of Short-Channel Heterostructure Double Gate Junction-Less MOSFET Circuits Considering Quantum Mechanical Effects

Silicon - In this article, the electrical behavior of short channel SiGe Heterostructure Junction-Less DG-MOSFET have been studied by incorporating the quantum mechanical effect and short channel...     

Analysis of ONOFIC Technique Using SiGe Heterojunction Double Gate Vertical TFET for Low Power Applications

Silicon - In this paper, a new technique ONOFIC is proposed and implemented for designing the SiGe heterojunction 2D double gate Vertical t-shaped TFET as an inverter circuit for low power...     

Performance Improvement of Heterojunction Double Gate TFET with Gaussian Doping

Silicon - A new Ge/SiGe heterojunction double-gate tunnel field effect transistor (DGT) model with hetero dielectric gate and Gaussian doping drain region is investigated for the first time. The...     

Segmented Drain Engineered Tunnel Field Effect Transistor for Suppression of Ambipolarity

Silicon - In this paper, a new Si0.6Ge0.4/Si heterostructure tunneling field-effect transistor with segmented drain (SiGe/Si SD TFET) is proposed and simulated by Silvaco ATLAS simulator. The drain...     

Investigation of N + SiGe Gate Stacked V-TFET Based on Dopingless Charge Plasma for Gas Sensing Application

Silicon - In this paper, a novel n + SiGe pocket layer gate stacked VTFET doping less charge plasma is proposed and analyzed using Silvaco TCAD simulation software. The proposed device...     

Implementation of Band Gap and Gate Oxide Engineering to Improve the Electrical Performance of SiGe/InAs Charged Plasma-Based Junctionless-TFET

Silicon - This paper reports on a charged plasma-based adjustable bandgap source/channel (So/Ch) interface using a new semiconductor compound (SiGe/ InAs) and bimaterial oxide (HfO2/SiO2)...     

Design and Investigation of SiGe Heterojunction Based Charge Plasma Vertical TFET for Biosensing Application

Silicon - This paper explores the Vertical tunnel FET with the introduced layer of SiGe within the channel/source junction using TCAD. As Tunnel FETs smothered the 60 mV/decade confinement...     

Photoluminescence Lifetime and Structure of Molecular Beam Epitaxy Porous Si1 − xGex Grown on Si

A study is presented of the local structure of intense visible light emitting porous SiGe with an initial Ge fraction of 30 at% grown on boron doped-Si substrates by Solid State Molecular Beam Epitaxy (SS-MBE). Analysis of the Extended X-ray Absorption Fine Structure (EXAFS) of the SS-MBE grown SiGe and their anodized porous counterparts processed under various conditions is used to obtain a better understanding of the visible light-emitting mechanism of porous SiGe. In addition, the photoluminescence decay dynamics of porous SiGe are examined and are found to differ in terms of speed and behaviour from porous Si. We interpret the origin of visible PL of the porous MBE SiGe films by considering the quantum confinement effect, as in the interpretation of PL from porous Si, and the evolution of the SiGe Si like-band structure.     

Morphology control and optical properties of SiGe nanostructures grown on glass substrate

With the rapid progress of nanotechnology, nanostructures with different morphologies have been realized, which may be very promising to enhance the performance of semiconductor devices. In this study, SiGe nanostructures with several kinds of configurations have been synthesized through a chemical vapor deposition process. By controlling growth conditions, different SiGe nanostructures can be easily tuned. Structures and compositions of the nanostructures were determined by scanning electron microscopy, transmission electron microscopy, and X-ray diffraction. The optical properties of various SiGe nanostructures revealed some dependence with their morphologies, which may be suitable for solar cell applications. The control of the SiGe morphology on nanoscale provides a convenient route to produce diverse SiGe nanostructures and creates new opportunities to realize the integration of future devices.     

Formation mechanism of SiGe nanorod arrays by combining nanosphere lithography and Au-assisted chemical etching

ABSTRACT: The formation mechanism of SiGe nanorod (NR) arrays fabricated by combining nanosphere lithography and Au-assisted chemical etching has been investigated. By precisely controlling the etching rate and time, the lengths of SiGe NRs can be tuned from 300 nm to 1 μm. The morphologies of SiGe NRs were found to change dramatically by varying the etching temperatures. We propose a mechanism involving a locally temperature-sensitive redox reaction to explain this strong temperature dependence of the morphologies of SiGe NRs. At a lower etching temperature, both corrosion reaction and Au-assisted etching process were kinetically impeded, whereas at a higher temperature, Au-assisted anisotropic etching dominated the formation of SiGe NRs. With transmission electron microscopy and scanning electron microscopy analyses, this study provides a beneficial scheme to design and fabricate low-dimensional SiGe-based nanostructures for possible applications.     

SiGe合金综述：最新的研究进展及热电性能 优化策略

硅锗（SiGe）合金作为代表性中高温热电材料,在太空探测航天器的辅助电源上,已经获得了较为广泛的应用。SiGe合金具备结构稳定、元素丰富、无毒、耐高温、易于工业集成等显著优势,但较低的热电性能限制了SiGe合金的实际应用与推广。基于此,本文综述了SiGe基热电材料在电、热两方面的协同优化策略,以及相关最新研究进展。在电学方面,揭示了调制掺杂、能量过滤机制等优化策略对提高SiGe合金的功率因子的重要性;在热学方面,详细回顾了降低SiGe合金晶格热导率的诸多策略,包括纳米结构化、SiGe-金属硅化物/硅化物复合以及SiGe-氧化物复合策略,并比较了不同优化策略对晶格热导率的降低效果。通过电热输运参数的协同优化,p型和n型SiGe基热电材料的zT值分别达到了1.81（1100 K）和1.7（1173 K）,为当前文献报道的最高值。本文对于SiGe块体材料的热电性能的进一步优化提供了一定的参考。     

Uniform SiGe/Si quantum well nanorod and nanodot arrays fabricated using nanosphere lithography

This study fabricates the optically active uniform SiGe/Si multiple quantum well (MQW) nanorod and nanodot arrays from the Si_0.4Ge_0.6/Si MQWs using nanosphere lithography (NSL) combined with the reactive ion etching (RIE) process. Compared to the as-grown sample, we observe an obvious blueshift in photoluminescence (PL) spectra for the SiGe/Si MQW nanorod and nanodot arrays, which can be attributed to the transition of PL emission from the upper multiple quantum dot-like SiGe layers to the lower MQWs. A possible mechanism associated with carrier localization is also proposed for the PL enhancement. In addition, the SiGe/Si MQW nanorod arrays are shown to exhibit excellent antireflective characteristics over a wide wavelength range. These results indicate that SiGe/Si MQW nanorod arrays fabricated using NSL combined with RIE would be potentially useful as an optoelectronic material operating in the telecommunication range.     

Influence of High-k Passivation Layer on Gate Field Plate AlGaN/GaN/AlGaN Double Heterojunction HEMT

Silicon - In this work, we have analysed the influence of passivation material such as Silicon dioxide (SiO2), Silicon Nitride (Si3N4), Aluminium oxide (Al2O3), Hafnium Silicon Oxide (HfSiO4),...     

Composition profiling of inhomogeneous SiGe nanostructures by Raman spectroscopy

In this work, we present an experimental procedure to measure the composition distribution within inhomogeneous SiGe nanostructures. The method is based on the Raman spectra of the nanostructures, quantitatively analyzed through the knowledge of the scattering efficiency of SiGe as a function of composition and excitation wavelength. The accuracy of the method and its limitations are evidenced through the analysis of a multilayer and of self-assembled islands.     

Micro-channel fabrication on silicon wafer (100) using Rotary Ultrasonic Machining

Silicon - In the Present work Rotary Ultrasonic machining is used for fabrication of micro channel on Silicon wafer. Silicon wafer possesses a plethora of applications, from their use in...     

Bubble Formation in Glass by Reaction with Silicon and Silicon-Germanium Alloys

The cause of bubbles at a glass/Si, glass/SiGe interface, which form when some glasses are fused on Si or SiGe, was determined. Water, bonded as OH groups in the glass, was reduced by the Si at high temperatures to form H₂. The gas released by this reaction formed bubbles only in those glasses with low permeability to H₂.     

Interfacial atomic structure analysis at sub-angstrom resolution using aberration-corrected STEM

The atomic structure of a SiGe/Si epitaxial interface grown via molecular beam epitaxy on a single crystal silicon substrate was investigated using an aberration-corrected scanning transmittance electron microscope equipped with a high-angle annular dark-field detector and an energy-dispersive spectrometer. The accuracy required for compensation of the various residual aberration coefficients to achieve sub-angstrom resolution with the electron optics system was also evaluated. It was found that the interfacial layer was composed of a silicon single crystal, connected coherently to epitaxial SiGe nanolaminates. In addition, the distance between the dumbbell structures of the Si and Ge atoms was approximately 0.136 nm at the SiGe/Si interface in the [110] orientation. The corresponding fast Fourier transform exhibited a sub-angstrom scale point resolution of 0.78 Å. Furthermore, the relative positions of the atoms in the chemical composition line scan signals could be directly interpreted from the corresponding incoherent high-angle annular dark-field image.     

Defect Characterization in SiGe/SOI Epitaxial Semiconductors by Positron Annihilation

The potential of positron annihilation spectroscopy (PAS) for defect characterization at the atomic scale in semiconductors has been demonstrated in thin multilayer structures of SiGe (50 nm) grown on UTB (ultra-thin body) SOI (silicon-on-insulator). A slow positron beam was used to probe the defect profile. The SiO₂/Si interface in the UTB-SOI was well characterized, and a good estimation of its depth has been obtained. The chemical analysis indicates that the interface does not contain defects, but only strongly localized charged centers. In order to promote the relaxation, the samples have been submitted to a post-growth annealing treatment in vacuum. After this treatment, it was possible to observe the modifications of the defect structure of the relaxed film. Chemical analysis of the SiGe layers suggests a prevalent trapping site surrounded by germanium atoms, presumably Si vacancies associated with misfit dislocations and threading dislocations in the SiGe films.