哈特曼法像差自动测量系统图像处理算法的研究

为了解决基于哈特曼法自动测量像差所面对的CCD图像传感和数字图像处理技术,提出了哈特曼光阑图像在存储器中目标的识别与测量的图像映像区搜索算法和哈特曼光阑图像中光斑距离测量的中心重叠算法。图像映像区搜索算法解决了如何在一维图像存储器中准确地寻找二维图像目标,找到目标之后如何进行有关的目标计算的技术。理论分析和实验表明利用所有光斑的质心求解哈特曼光阑图像的重心,再由光斑质心关于光阑图像重心的对称性确定光斑质心距离的中心重叠算法增加7算法可计算性和减少了计算次数,大大降低了算法的时间复杂度和计算复杂度。     

双光束在线实时测量光学薄膜应力的装置

为了在薄膜形成期间跟踪生长表面应力水平的演变,更加深入地探究薄膜应力的产生机理,基于光束偏转法,搭建了利用双光束照射在镀膜基底表面的实时测量光学薄膜应力的装置.装置软件系统从线阵CCD中提取双光斑位移的变化,经过多次测量验证了算法的精确度,使装置的精确度达到2.2%,可以满足光学薄膜应力测量的要求.使用此装置跟踪SiO2薄膜镀制过程,得到了应力变化曲线.结果表明,双光束实时测量薄膜应力装置具有抗干扰能力强、精度高等特点,可以为光学薄膜镀制过程中提供有效可行的原位应力测量手段.     

基于自会聚多光束阵列的薄膜应力传感器

介绍了一种通过分析二元光束阵列的反射光图像,利用Stoney方程解算出薄膜应力的在线测量传感器.传感器是以二维Dammann光栅和Fresnel波带板所组成的集成二元光学分束器为核心设计的.该传感器可进行各种单晶、多晶和非晶结构材料沉积过程的现场应力测量,灵敏度优于2.5×106Pa,精度优于4.27%.它具有结构简单、测量速度快、适应性强、设备集成度高而且易于安装调试等特点.与计算机自动控制系统相结合,可以应用于半导体集成电路生产线的薄膜生长过程控制.     

提高波前探测精度的高阶矩方法

夏克-哈特曼波前传感器测量畸变波前的探测精度主要取决于光斑质心的测量精度。提出了一种提高光斑质心探测精度的新方法,在优化的探测窗口内使用高阶矩方法计算光斑的质心。首先,在整个子孔径内,通过一阶矩方法获得光斑的近似中心,然后以这个近似中心为中心,包含整个光斑,建立一个矩形窗口,并在该窗口内通过高阶矩方法重新计算光斑的质心。通过该改进的方法,在优化的探测窗口外,噪声的影响基本被消除;在优化的探测窗口内,噪声的影响也因为光斑权值比重的增大而削弱。实验结果证明:与传统方法相比,新方法提高了光斑质心测量的精度、重复性和稳定性。     

基于自会聚多光束阵列的薄膜应力传感器

介绍了一种通过分析二元光束阵列的反射光图像,利用Stoney方程解算出薄膜应力的在线测量传感器.传感器是以二维Dammann光栅和Fresnel波带板所组成的集成二元光学分束器为核心设计的.该传感器可进行各种单晶、多晶和非晶结构材料沉积过程的现场应力测量,灵敏度优于2.5×106Pa,精度优于4.27%.它具有结构简单、测量速度快、适应性强、设备集成度高而且易于安装调试等特点.与计算机自动控制系统相结合,可以应用于半导体集成电路生产线的薄膜生长过程控制     

基于图像处理技术的光斑质心高精度测量

针对传统的光斑质心测量方法子孔径窗口内远离光斑的噪声对一阶矩质心算法的影响,本文提出一种利用图像处理技术提高光斑质心探测精度的新方法。在哈特曼-夏克（H-S）波前传感器测得的光斑阵列图像中,采用自适应阈值方法优化每个子孔径的探测窗口,使探测窗口和光斑分布区域最佳匹配;然后在探测窗口内,采用线性插值方法提高图像的分辨率。...     

基于互相关和改进高斯拟合的光斑中心提取方法

针对差分激光三角法海面溢油油膜厚度测量系统 中光斑图像中心提取的问题,在分析用 于系统标定的陶瓷量块和所测量的石油表面光斑图像特征的基础上,采用互相关与改进型高 斯拟合的算法对光斑中心进行提取。算法首先采用标准高斯图像模板与光斑图像进行互相 关,得到了保留图像特征且光顺的光斑图像;然后,利用上下边沿信息进行高斯计算的改进 型高斯拟合方法进行光斑图像拟合,由拟合得到的高斯图像参数计算出光斑中心坐标。通过 本算法与目前已有的平方加权质心法、高斯拟合法、改进型高斯拟合法和互相关高斯拟合法 对图像光斑中心提取结果的比较与分析,得出互相关和改进高斯拟合相结合的方法在光斑提 取重复性精度,以及使用本算法对陶瓷量块厚度测量精度均好于其它方法,并对石油表 面图像进行了中心提取实验。结果表明,本文算法适合于差分激光三角法海面溢油油膜厚度 测量系统的光斑提取。     

哈特曼-夏克波前传感器的高精度质心探测方法

为提高哈特曼-夏克波前传感器(HS-WFS)的光斑质心探测精度以实现光学系统的高精度波前检测,提出了一种有效的质心探测方法。该方法利用非线性滤波和窗口法对整幅光斑图像进行全局处理后,结合中值滤波、三次样条插值和自适应Otsu阈值法对单个光斑进行局部处理。分析了三次样条灰度插值点个数不同,探测精度和计算时间的变化规律。采用该方法探测了含有噪声的光斑图像,其质心探测误差仅为0.0442pixel,比传统的非线性滤波、Otsu阈值法和探测窗口法探测精度分别提高了91.86%、87.97%和31.79%。对已知波像差的光学系统进行了仿真检测,得到的波前检测精度峰谷(P-V)值为0.0098λ,精度均方根(RMS)值达到0.0027λ。结果表明该方法能够提高质心探测精度,可用于高精度光学系统的检测。     

基于线阵CCD的多表面焦点偏移测量

在显微成像过程中,焦点偏移对长时间的活细胞观测等应用有很大影响,自动对焦技术是解决该问题最有效的技术手段之一。反射式的主动式表面偏移测量是显微镜实现自动对焦的关键,但是在存在多个表面反射的情况下如何进行准确的焦点偏移测量仍是需要解决的一个问题。本文提出了一种针对多表面反射的焦点偏移测量方法,该方法采用线阵CCD对反射光斑进行成像,不同表面反射回来的光斑在线阵CCD上可以很好的区分,通过窗口加权质心法够精确地测量所需要的表面反射光斑在CCD上的位移,从而精确测定焦点偏移,在样品干燥和样品湿润的情况下测量精度分别达到106 nm和111 nm。     

夏克—哈特曼波前传感器的探测误差

夏克—哈特曼（S－H）传感器的探测误差是自适应光学系统的一个主要误差源。本文主要分析了S-H传感器的系统误差和随机误差，其误差源包括：CCD相机的读出噪声和背景电平，探测的像素数以及光子噪声。通过在计算哈特曼传感器子光斑质心时设定一个阈值可以大大提高传感器的探测精度。本文同时列举了实验数据和理论分析结果。     

Full-field wafer level thin film stress measurement by phase-stepping shadow Moire/spl acute/

A wafer topography measurement system has been designed and demonstrated based on shadow Moire/spl acute/. Three-step phase-stepping and phase unwarping techniques are also incorporated to enhance the system resolution. Wafer curvatures or bows can be achieved by analyzing the Moire/spl acute/ fringe patterns and film stress can be obtained subsequently by transforming this wafer curvature using a conversion equation such as Stoney's formula. Wafer bow of plasma enhanced chemical vapor deposition nitride and oxide coated wafers are measured by this shadow Moire/spl acute/ system and are subsequently verified by the KLA-Tencor FLX 2320 system. The discrepancy between both bow measurements is within 2/spl mu/m, regardless of the magnitude of the measurement. Therefore, this system is especially suitable for stress characterization of thicker, stiffer, or highly stressed films. In comparison with the traditional laser scanning method, wafer curvature obtained by shadow Moire/spl acute/ is based on full-field information and it would have a better accuracy. By integrating this system with a more accurate wafer curvature to film stress conversion formula, this system should also provide a better film stress characterization.     

A study of residual stress distribution through the thickness of p+ silicon films [thermal oxidation effects]

The effect of thermal oxidation on the residual stress distribution throughout the thickness of heavily-boron-doped (p⁺ ) silicon films is studied. The deflection of p⁺ silicon cantilever beams due to residual stress variation throughout the film thickness is studied for as-diffused and thermally oxidized films. Cantilevers of as-diffused p⁺ silicon films display a positive curvature (or a negative bending moment), signified by bending up of the beams. Thermal oxidation of the films prior to cantilever fabrication by anisotropic etching modifies the residual stresses in the p⁺ film, specially in the near-surface region (i.e. the top 0.3 to 0.5 μm for the oxidation times used here), and can result in beams with a negative curvature even when the oxide is removed from the p⁺ silicon cantilever surface subsequent to cantilever fabrication     

Black Pad Susceptibility of the Electroless Ni Films on the Cu UBM

The occurrence of black pad in the electroless Ni film during the immersion gold process is related to the surface morphology of the Ni(P) film. A nonuniform distribution of the nodule size and curvature is the crucial factor. Large nodules with small surface curvatures had higher P concentration and did not corrode, while small nodules with large surface curvatures had lower P concentration and corroded. Experiments using different types of Cu substrates suggest that the Ni(P) film black pad susceptibility increased with the defect density and/or the residual stress in the underlying substrate. Annealing the Cu substrate before the electroless Ni plating greatly reduced the black pad formation.     

AlN薄膜的热应力模拟计算

本文通过ANSYS有限元分析软件对薄膜的热应力进行了模拟计算,并通过理论计算验证了其合理性.模拟出了薄膜应力值及分布情况,分析了薄膜沉积温度与薄膜厚度对薄膜度应力的影响.从模拟的结果可以看出,薄膜上表面X方向应力主要集中在薄膜中心,边缘应力较小,但边缘的形变较大;薄膜的热应力随着薄膜沉积温度的升高而增大,随着膜厚的增加...     

聚合物分散液晶膜的弯曲散射偏光效应

实验制备了聚合物分散液晶(PDLC)电控调光膜样品 。测试结果表明,样品散射雾度90%以上;施加电场透明透光率接近 80%;施加弯曲应力半透明最大透光率30%以上。分析了样品施加应力 后出现的弯 曲散射偏光现象,弯曲应力导致双极构型的双极连线有沿弯曲方向的大致沿面取向,使 得液晶 微滴中液晶分子有沿面大致取向,导致液晶微滴的折射率沿弯曲方向与聚合物折射率差别大 造成光散射,而沿垂直弯曲方向与聚合物折射率相等造成光透射。     

<Emphasis Type="Italic">In Situ</Emphasis> Stress Measurements During GaN Growth on Ion-Implanted AlN/Si Substrates

In situ wafer curvature measurements were used in combination with postgrowth structural characterization to study the evolution of film stress and microstructure in GaN layers grown by metalorganic chemical vapor deposition on N⁺ ion-implanted AlN/Si (111) substrates. The results were compared with growth on identical unimplanted substrates. In situ stress measurements revealed that, for the unimplanted sample, the GaN initiated growth under compressive stress of −1.41 GPa which arose due to lattice mismatch with the AlN buffer layer. In contrast, GaN growth on the ion-implanted sample began at lower compressive stress of −0.84 GPa, suggesting a reduction in epitaxial stress. In both cases, the compressive growth stress was fully relaxed after ~0.7 μm and minimal tensile stress was generated during growth. During post-growth cooling, tensile stress was introduced in the GaN layer of both samples due to thermal expansion mismatch. Post-growth optical microscopy characterization, however, demonstrated that the ion-implanted sample had lower density of channeling cracks compared with the unimplanted sample. Cross-sectional transmission electron microscopy images of the sample grown on ion-implanted Si with no post-implantation nitrogen annealing revealed the formation of horizontal cracks in the implanted region beneath the AlN buffer layer. The weakened layer acts to decouple the GaN film from the Si substrate and thereby reduces the density of channeling cracks in the film after growth.     

Mechanical properties and microstructural characterization of Al-0.5%Cu thin films

Using a wafer curvature technique we have studied the variation of stress with tem-perature in Al-0.5%Cu thin films deposited on oxidized silicon wafers. Concurrently, the microstructural changes in the films induced by the thermal cycling inherent to this technique were studied with in-situ transmission electron microscopy heating experi-ments. On heating an as-sputtered film a stress drop occurs, corresponding to the onset of grain growth. The in-situ TEM experiments indicate that the extent of grain growth is significantly altered by the presence of compressive stresses in the film. During cool-ing, dislocation loops nucleate on {111} planes inclined to the film surface, although the grain size plays an important role in determining the extent to which this mechanism can account for the deformation. A native oxide can influence the stress levels in the film by pinning one end of the dislocation loops. Upon cooling below 200° C a rapid increase in stress occurs. Although this increase has been attributed to hardening due to the precipitation of excess copper, no evidence of precipitate-dislocation interactions were observed.     

Understanding the Effects of Stress on the Crystallization of Amorphous Silicon

This paper presents the results of a systematic study on the effects of stress on aluminum-induced crystallization (AIC) of plasma-enhanced chemical-vapor-deposited (PECVD) amorphous silicon (a-Si:H). To decouple the impact of stress on the AIC of a-Si:H from other factors that may affect crystallization, such as a-Si:H and aluminum deposition conditions, identical thin film structures [Al (200 nm)/a-Si:H (200 nm)] were deposited on the front surface of all samples. On the back surfaces, various amorphous silicon films were deposited to adjust the curvature of the samples and, therefore, the stress in the a-Si:H film on the front surface. It was found that tensile stress in a-Si:H can retard the AIC of a-Si:H.     

金属板料激光冲击成形技术研究

本文首次提出利用激光冲击波进行金属板料成形的新技术——金属板料的激光冲击成形,分析了其成形机理和特点。利用脉冲能量为1030J、脉宽为20ns的高功率Nd:Glass激光器,对金属板料进行了激光冲击成形的实验研究,探讨了激光参数、约束边界条件等对板料成形的影响。结果表明:在单次激光冲击下,随激光能量的增加,板料成形量随之增大,顶部曲率半径减小;随约束孔径的增加,板料成形量和顶部曲率半径都随之增加;在成形区凸面顶部为残余压缩应力-301MPa～-28MPa,而在成形凹面顶部因板料厚度的不同而呈现为残余压缩应力或拉伸应力。通过选择不同的激光参数和约束条件可以获得所需的工件轮廓形状和表面残余应力性质,为大面积板料的无模激光冲击成形技术的研究提供了依据。     

Experimental identification of thermal induced warpage in polymer–metal composite films

Composite thick films consisting of multi-layered polymers and metals are widely used in integrated circuits(IC) and its packaging, and it arises intricate stress and warpage problems due to complex inner stress distribution and evolution. The wafer warpage origination and evolution of multi-layered polyimide (PI)/Cu composite film is measured in-situ by a Multi-beam Laser Optical Sensor (MOS) system. It's found that PI has an intricate influence on wafer warpage evolution and Cu plastic deformation due to viscoelasticity and glass-transition, and the influence differs in different structures and at different temperatures. Nonlinearity of the curvature–temperature curve of the composite occurs at much lower temperature than in single PI or Cu film, showing mutual effect of PI and Cu. Unlike bare or capping PI film that totally stress relaxed at high temperature, bottom PI coated by Cu film sustains a medium compressive stress, indicating that Cu coating film has restrained stress relaxation of PI. The warpage evolution during heating is different from that during cooling, perhaps due to different deformation mechanism.