低功耗、高性能多米诺电路电荷自补偿技术

提出了一种电荷自补偿技术来降低多米诺电路的功耗,并提高了电路的性能.采用电荷自补偿技术设计了具有不同下拉网络(PDN)和上拉网络(PUN)的多米诺电路,并分别基于65,45和32nm BSIM4 SPICE模型进行了HSPICE仿真.仿真结果表明,电荷自补偿技术在降低电路功耗的同时,提高了电路的性能.与常规多米诺电路技术相比,采用电路自补偿技术的电路的功耗延迟积(PDP)的改进率可达42.37%.此外,以45nm Zipper CMOS全加器为例重点介绍了功耗分布法,从而优化了自补偿路径,达到了功耗最小化的目的.最后,系统分析了补偿通路中晶体管宽长比,电路输入矢量等多方面因素对补偿通路的影响.     

45nm低功耗、高性能Zipper CMOS多米诺全加器设计

提出了电荷自补偿技术,此技术利用P型多米诺电路动态结点的放电对N型多米诺电路的动态结点充电,并在此技术基础上综合应用双阈值技术和多电源电压技术,设计了新型低功耗、高性能Zipper CMOS多米诺全加器.仿真过程中提出了功耗分布法,精确找到了电荷自补偿技术的最优路径.仿真结果表明,在相同的时间延迟下,与标准Zipper CMOS多米诺全加器、双阈值Zipper CMOS多米诺全加器、多电源电压Zipper CMOS多米诺全加器相比,新型Zipper CMOS多米诺全加器动态功耗分别减小了37%、35%和7%,静态功耗分别减小了41%,20%和43%.最后,分析并得到了新型全加器漏电流最低的输入矢量和时钟状态.     

45mm低功耗、高性能Zipper CMOS多米诺全加器设计

提出了电荷自补偿技术,此技术利用P型多米诺电路动态结点的放电对N型多米诺电路的动态结点充电,并在此技术基础上综合应用双阈值技术和多电源电压技术,设计了新型低功耗、高性能Zipper C?dOS多米诺全加器.仿真过程中提出了功耗分布法,精确找到了电荷自补偿技术的最优路径.仿真结果表明,在相同的时间延迟下,与标准Zipper CMOS多米诺全加器、双阈值Zipper CMOS多米诺全加器、多电源电压Zipper CMOS多米诺全加器相比,新型Zipper CMOS多米诺全加器动态功耗分别减小了37%、35%和7%,静态功耗分别减小了41%,20%和43%.最后,分析并得到了新型全加器漏电流最低的输入矢量和时钟状态.     

亚70nm CMOS工艺低漏电流、高噪声容限的低功耗多输入多米诺或门的设计

提出了两种新的电路技术,在降低多输入多米诺"或门"的动态功耗的同时减小了漏电流,并提高了电路的噪声容限.采用新的电路技术设计了八输入多米诺"或门"并基于45nm BSIM4 SPICE 模型对其进行了模拟.模拟结果表明,设计的两种新多米诺电路在同样的噪声容限下有效地降低了动态功耗,减小了总的漏电流,同时提高了工作速度.与双阈值多米诺电路相比,设计的两种电路动态功耗分别降低了8.8%和11.8%,电路速度分别提高了9.5%和13.7%,同时总的漏电流分别降低了80.8%和82.4%.基于模拟结果,也分析了双阈值多米诺电路中求值点的不同逻辑状态对总的漏电流的影响.     

亚70nm CMOS工艺低漏电流、高噪声容限的低功耗多输入多米诺或门的设计

提出了两种新的电路技术,在降低多输入多米诺"或门"的动态功耗的同时减小了漏电流,并提高了电路的噪声容限.采用新的电路技术设计了八输入多米诺"或门"并基于45nm BSIM4 SPICE 模型对其进行了模拟.模拟结果表明,设计的两种新多米诺电路在同样的噪声容限下有效地降低了动态功耗,减小了总的漏电流,同时提高了工作速度.与双阈值多米诺电路相比,设计的两种电路动态功耗分别降低了8.8%和11.8%,电路速度分别提高了9.5%和13.7%,同时总的漏电流分别降低了80.8%和82.4%.基于模拟结果,也分析了双阈值多米诺电路中求值点的不同逻辑状态对总的漏电流的影响.     

45nm工艺pn混合下拉网络多米诺异或门设计

提出了一种pn混合下拉网络技术,即在多米诺门的下拉网络中混合使用pMOS管和nMOS管来降低电路的功耗并提高电路的性能.首先,应用此技术设计了多米诺异或门,与标准的n型多米诺异或门相比,新型异或门的静态功耗和动态功耗分别减小了 46%和3%.然后,在此技术的基础上,综合应用多电源电压技术和双阈值技术设计了功耗更低的多米诺异或门,与标准的n型多米诺异或门相比,静态功耗和动态功耗分别减小了82%和21%.最后分析并确定了4种多米诺异或门的最小漏电流状态和交流噪声容限.     

45nm工艺pn混合下拉网络多米诺异或门设计

提出了一种pn混合下拉网络技术,即在多米诺门的下拉网络中混合使用pMOS管和nMOS管来降低电路的功耗并提高电路的性能. 首先,应用此技术设计了多米诺异或门,与标准的n型多米诺异或门相比,新型异或门的静态功耗和动态功耗分别减小了46%和3%. 然后,在此技术的基础上,综合应用多电源电压技术和双阈值技术设计了功耗更低的多米诺异或门,与标准的n型多米诺异或门相比,静态功耗和动态功耗分别减小了82%和21%. 最后分析并确定了4种多米诺异或门的最小漏电流状态和交流噪声容限.     

一种基于55nm工艺的超前进位加法器设计

加法器作为数字电路中的重要组件,其计算速度对系统性能至关重要。本文对加法器电路进行了深入研究,基于4进制Kogge-Stone树结构和多相时钟控制改进后的多米诺动态电路,设计了一种64位超前进位加法器,并完成全定制版图设计。该加法器采用55nm CMOS工艺,在3.7 GHz的时钟频率下,关键路径延时为372 ps,平均功耗为24.47 mW,功耗延时积为9.1 pJ,版图总面积约为29482μm2。这些结果显示,所提出的设计方案在性能方面取得了显著的改进。它不仅提高了加法器电路的计算速度,还有效降低了功耗和占用的芯片面积。     

高性能微处理器中一种改进的高扇入多米诺电路设计与实现

设计实现了一种改进的高扇入多米诺电路结构.该电路的nMOS下拉网络分为多个块,有效降低了动态节点的电容,同时每一块只需要一个小尺寸的保持管.由于省去了标准多米诺逻辑中的尾管,有效地提升了该电路的性能.在0.13μm工艺下对该结构实现的一个64位或门进行模拟,延迟为63.9ps,功耗为32.4μw,面积为115μm2.与组合多米诺逻辑相比,延迟和功耗分别降低了55%和38%.     

高性能微处理器中一种改进的高扇入多米诺电路设计与实现

设计实现了一种改进的高扇入多米诺电路结构. 该电路的nMOS下拉网络分为多个块,有效降低了动态节点的电容,同时每一块只需要一个小尺寸的保持管. 由于省去了标准多米诺逻辑中的尾管,有效地提升了该电路的性能. 在0.13μm工艺下对该结构实现的一个64位或门进行模拟,延迟为63.9ps,功耗为32.4μW,面积为115μm2. 与组合多米诺逻辑相比,延迟和功耗分别降低了55%和38%.     

Ultra-low power FinFET-based domino circuits

Aggressive scaling of single-gate CMOS device face greater challenge in nanometre technology as sub-threshold and gate-oxide leakage currents increase exponentially with reduction of channel length. This paper discusses a double-gate FinFET (DGFET) technology which mitigates leakage current and higher ON state current when scaling is done beyond 32 nm. Here 8 and 16 input OR gate domino logic circuits are simulated on 32 nm FinFET Predictive technology model (PTM) on HSPICE. Simulation results of different 8 input OR gate domino logic circuits like Current-mirror footed domino (CMFD), High-speed clock-delayed (HSCD), Modified-HSCD (M-HSCD), Conditional evaluation domino logic (CEDL) and Conditional stacked keeper domino logic (CSK-DL), all operated in Short Gate (SG) and Low Power (LP) mode, shows tremendous reduction in average power consumption and delay. In this paper, domino logic-based circuit Ultra-Low Power Stack Dual-Phase Clock (ULPS-DPC) is proposed for both CMOS and FinFET (SG and LP modes). Proposed circuit shows maximum reduction in average power consumption of 84.04% when compared with CSK-DL circuit and maximum reduction in delay of 75.4% when compared with M-HSCD circuit at 10 MHz frequency when these circuits are simulated in SG mode.     

Robust low leakage controlled keeper by current-comparison domino for wide fan-in gates

In this paper, a new design for low leakage and noise immune wide fan-in domino circuits is presented. The proposed technique uses the difference and the comparison between the leakage current of the OFF transistors and the switching current of the ON transistors of the pull down network to control the PMOS keeper transistor, yielding reduction of the contention between keeper transistor and the pull down network from which previously proposed techniques have suffered. Moreover, using the stacking effect, leakage current is reduced and the performance of the current mirror is improved. Results of simulation in high performance 16 nm predictive technology model (PTM) demonstrate that the proposed circuit exhibits about 39% less power consumption, and nearly 2.57 times improvement in noise immunity with a 41% die area overhead for a 64-bit OR gate compared to a standard domino circuit.     

FinFET domino logic with independent gate keepers

Scaling of single-gate MOSFET faces great challenges in the nanometer regime due to the severe short-channel effects that cause an exponential increase in the sub-threshold and gate-oxide leakage currents. Double-gate FinFET technology mitigates these limitations by the excellent control over a thin silicon body by two electrically coupled gates. In this paper a variable threshold voltage keeper circuit technique using independent-gate FinFET technology is proposed for simultaneous power reduction and speed enhancement in domino logic circuits. The threshold voltage of a keeper transistor is dynamically modified during circuit operation to reduce contention current without sacrificing noise immunity. The optimum independent-gate keeper gate bias conditions are identified for achieving maximum savings in delay and power while maintaining identical noise immunity as compared to the standard tied-gate FinFET domino circuits. With the variable threshold voltage double-gate keeper circuit technique the evaluation speed is enhanced by up to 49% and the power consumption is reduced by up to 46% as compared to the standard domino logic circuits designed for similar noise margin in a 32 nm FinFET technology.     

Sleep switch dual threshold voltage domino logic with reduced subthreshold and gate oxide leakage current

A circuit technique is proposed in this paper for simultaneously reducing the subthreshold and gate oxide leakage power consumption in domino logic circuits. PMOS-only sleep transistors and a dual threshold voltage CMOS technology are utilized to place an idle domino logic circuit into a low leakage state. Sleep transistors are added to the dynamic nodes in order to reduce the subthreshold leakage current by strongly turning off all of the high threshold voltage transistors. Similarly, the sleep switches added to the output nodes suppress the voltages across the gate insulating layers of the transistors in the fan-out gates, thereby minimizing the gate tunneling current. The proposed circuit technique lowers the total leakage power by 88 to 97% as compared to the standard dual threshold voltage domino logic circuits. Similarly, a 22 to 44% reduction in the total leakage power is observed as compared to a previously published sleep switch scheme in a 45 nm CMOS technology.     

Diode-footed domino: a leakage-tolerant high fan-in dynamic circuit design style

A leakage-tolerant design technique for high fan-in dynamic logic circuits is presented. An NMOS transistor with gate and drain terminals tied together (diode) is added in series with the evaluation network of standard domino circuits. Due to the stacking effect, the leakage of the evaluation path significantly decreases, thereby improving the robustness of the circuit against deep-submicron subthreshold leakage and input noise. To improve the speed of the circuit, a current mirror is also employed in the evaluation network to increase the evaluation current. The proposed technique (diode-footed domino) exhibits considerable improvement in leakage and noise immunity as compared to the standard domino circuits. Simulation results of wide fan-in gates designed using Berkeley Predictive Technology Models of 70-nm technology demonstrate at least 1.9/spl times/ noise-immunity improvement at the same delay compared to the standard domino circuits. Dynamic comparators and multiplexers are designed using the diode-footed domino and conventional techniques to demonstrate the effectiveness of the proposed scheme in improving leakage-tolerance and performance of high fan-in circuits.     

Critical evaluation of SOI design guidelines

Design guidelines for static and domino silicon-on-insulator (SOI) CMOS circuits are evaluated. Restructuring the logic to eliminate gates with large fan-ins is almost as beneficial for SOI as for bulk-silicon. Most published design fixes for eliminating parasitic bipolar induced upset are shown to aggravate the charge sharing problem. A new and improved predischarge method for enhancing the noise tolerance of SOI domino circuits is thus proposed . The topic of multiple output domino logic in SOI technology is addressed for the first time. Multiple output domino logic is shown to be more prone to bipolar leakage induced upset than regular domino. Many of the design practices used to alleviate bipolar leakage in regular domino are no longer valid due to the multiple output domino logic's inherent design requirements. A novel SOI-specific multiple output domino logic, particularly suitable for adder designs, is introduced to minimize the bipolar leakage risk.     

High speed wide fan‐in designs using clock controlled dual keeper domino logic circuits

Clock Controlled Dual keeper Domino logic structures (CCDD_1 and CCDD_2) for achieving a high‐speed performance with low power consumption and a good noise margin are proposed in this paper. The keeper control circuit comprises an additional PMOS keeper transistor controlled by the clock and foot node voltage. This control mechanism offers abrupt conditional control of the keeper circuit and reduces the contention current, leading to high‐speed performance. The keeper transistor arrangement also reduces the loop gain associated with the feedback circuitry. Hence, the circuits offer less delay variability. The design and simulation of various wide fan‐in designs using 180 nm CMOS technology validates the proposed CCDD_1 and CCDD_2 designs, offering an increased speed performance of 7.2% and 8.5%, respectively, over a conventional domino logic structure. The noise gain margin analysis proves good robustness of the CCDD structures when compared with a conventional domino logic circuit configuration. A Monte Carlo simulation for 2,000 runs under statistical process variations demonstrates that the proposed CCDD circuits offer a significantly reduced delay variability factor.     

Phase assignment for synthesis of low-power domino circuits

High performance circuit techniques such as domino logic have migrated from the microprocessor world into more mainstream ASIC designs but domino logic comes at a heavy cost in terms of total power dissipation. A set of results related to automated phase assignment for the synthesis of low-power domino circuits is presented: (1) it is demonstrated that the choice of phase assignment at the primary outputs of a circuit can significantly impact lower dissipation in the domino block, and (2) a method to determine a phase assignment that minimises power consumption in the final circuit implementation is proposed. Preliminary experimental results on a mixture of public domain benchmarks and real industry circuits show potential power savings as high as 34% over the minimum area realisation of the logic. Furthermore, the low-power synthesised circuits still meet timing constraints