Time-frequency localisation of Shannon wavelet packets

It is well known that the 2/spl pi/ minimally supported frequency scaling function /spl phi//sup /spl alpha//(x) satisfying /spl phi//spl circ//sup /spl alpha//(/spl omega/)=/spl chi//sub (-/spl alpha/,2/spl pi/-/spl alpha/)/(/spl omega/), 0相似文献   

Cyclic codes over GR(4/sup m/) which are also cyclic over /spl Zopf//sub 4/

Let GR(4/sup m/) be the Galois ring of characteristic 4 and cardinality 4/sup m/, and /spl alpha/_={/spl alpha//sub 0/,/spl alpha//sub 1/,...,/spl alpha//sub m-1/} be a basis of GR(4/sup m/) over /spl Zopf//sub 4/ when we regard GR(4/sup m/) as a free /spl Zopf//sub 4/-module of rank m. Define the map d/sub /spl alpha/_/ from GR(4/sup m/)[z]/(z/sup n/-1) into /spl Zopf//sub 4/[z]/(z/sup mn/-1) by d/spl alpha/_(a(z))=/spl Sigma//sub i=0//sup m-1//spl Sigma//sub j=0//sup n-1/a/sub ij/z/sup mj+i/ where a(z)=/spl Sigma//sub j=0//sup n-1/a/sub j/z/sup j/ and a/sub j/=/spl Sigma//sub i=0//sup m-1/a/sub ij//spl alpha//sub i/, a/sub ij//spl isin//spl Zopf//sub 4/. Then, for any linear code C of length n over GR(4/sup m/), its image d/sub /spl alpha/_/(C) is a /spl Zopf//sub 4/-linear code of length mn. In this article, for n and m being odd integers, it is determined all pairs (/spl alpha/_,C) such that d/sub /spl alpha/_/(C) is /spl Zopf//sub 4/-cyclic, where /spl alpha/_ is a basis of GR(4/sup m/) over /spl Zopf//sub 4/, and C is a cyclic code of length n over GR(4/sup m/).     

A high current gain 4H-SiC NPN power bipolar junction transistor

This work reports the development of high power 4H-SiC bipolar junction transistors (BJTs) by using reduced implantation dose for p+ base contact region and annealing in nitric oxide of base-to-emitter junction passivation oxide for 2 hours at 1150/spl deg/C. The transistor blocks larger than 480 V and conducts 2.1 A (J/sub c/=239 A/cm/sup 2/) at V/sub ce/=3.4 V, corresponding to a specific on-resistance (R/sub sp on/) of 14 m/spl Omega/cm/sup 2/, based on a drift layer design of 12 /spl mu/m doped to 6/spl times/10/sup 15/cm/sup -3/. Current gain /spl beta//spl ges/35 has been achieved for collector current densities ranging from J/sub c/=40 A/cm/sup 2/ to 239 A/cm/sup 2/ (I/sub c/=2.1 A) with a peak current gain of 38 at J/sub c/=114 A/cm/sup 2/.     

Random properties of the highest level sequences of primitive sequences over Z(2/sup e/)

Using the estimates of the exponential sums over Galois rings, we discuss the random properties of the highest level sequences /spl alpha//sub e-1/ of primitive sequences generated by a primitive polynomial of degree n over Z(2/sup e/). First we obtain an estimate of 0, 1 distribution in one period of /spl alpha//sub e-1/. On the other hand, we give an estimate of the absolute value of the autocorrelation function |C/sub N/(h)| of /spl alpha//sub e-1/, which is less than 2/sup e-1/(2/sup e-1/-1)/spl radic/3(2/sup 2e/-1)2/sup n/2/+2/sup e-1/ for h/spl ne/0. Both results show that the larger n is, the more random /spl alpha//sub e-1/ will be.     

Semi-empirical model of the ensemble-averaged differential Mueller matrix for microwave backscattering from bare soil surfaces

A semi-empirical model of the ensemble-averaged differential Mueller matrix for microwave backscattering from bare soil surfaces is presented. Based on existing scattering models and data sets measured by polarimetric scatterometers and the JPL AirSAR, the parameters of the co-polarized phase-difference probability density function, namely the degree of correlation /spl alpha/ and the co-polarized phase-difference /spl sigmav/, in addition to the backscattering coefficients /spl sigma//sub /spl nu//spl nu///sup 0/,/spl sigma//sub hh//sup 0/ and /spl sigma//sub /spl nu/h//sup 0/, are modeled empirically in terms of the volumetric soil moisture content m/sub /spl nu// and the surface roughness parameters ks and kl, where k=2/spl pi/f/c, s is the rms height and l is the correlation length. Consequently, the ensemble-averaged differential Mueller matrix (or the differential Stokes scattering operator) is specified completely by /spl sigma//sub /spl nu//spl nu///sup 0/,/spl sigma//sub hh//sup 0/,/spl sigma//sub /spl nu/h//sup 0/,/spl alpha/, and /spl zeta/.     

Very high density RF MIM capacitors (17 fF//spl mu/m/sup 2/) using high-/spl kappa/ Al/sub 2/O/sub 3/ doped Ta/sub 2/O/sub 5/ dielectrics

Using high-/spl kappa/ Al/sub 2/O/sub 3/ doped Ta/sub 2/O/sub 5/ dielectric, we have obtained record high MIM capacitance density of 17 fF//spl mu/m/sup 2/ at 100 kHz, small 5% capacitance reduction to RF frequency range, and low leakage current density of 8.9/spl times/10/sup -7/ A/cm/sup 2/. In combination of both high capacitor density and low leakage current density, a very low leakage current of 5.2/spl times/10/sup -12/ A is calculated for a typical large 10 pF capacitor used in RF IC that is even smaller than that of a deep sub-/spl mu/m MOSFET. This very high capacitance density with good MIM capacitor characteristics can significantly reduce the chip size of RF ICs.     

High-performance ultralow-temperature polycrystalline silicon TFT using sequential lateral solidification

This letter presents technologies to fabricate ultralow-temperature (< 150 /spl deg/C) polycrystalline silicon thin-film transistor (ULTPS TFT). Sequential lateral solidification is used for crystallization of RF magnetron sputter deposited amorphous silicon films resulting in a high mobility polycrystalline silicon (poly-Si) film. The gate dielectric is composed of plasma oxidation and Al/sub 2/O/sub 3/ grown by plasma-enhanced atomic layer deposition. The breakdown field on the poly-Si film was above 6.3 MV/cm. The fabricated ULTPS TFT showed excellent performance with mobility of 114 cm/sup 2//V /spl middot/ s (nMOS) and 42 cm/sup 2//V /spl middot/ s (pMOS), on/off current ratio of 4.20 /spl times/ 10/sup 6/ (nMOS) and 5.7 /spl times/ 10/sup 5/ (pMOS), small V/sub th/ of 2.6 V (nMOS) and -3.7 V (pMOS), and swing of 0.73 V/dec (nMOS) and 0.83 V/dec (pMOS).     

InGaAs/InP DHBTs with 120-nm collector having simultaneously high f/sub /spl tau//, f/sub max//spl ges/450 GHz

InP/In/sub 0.53/Ga/sub 0.47/As/InP double heterojunction bipolar transistors (DHBT) have been designed for increased bandwidth digital and analog circuits, and fabricated using a conventional mesa structure. These devices exhibit a maximum 450 GHz f/sub /spl tau// and 490 GHz f/sub max/, which is the highest simultaneous f/sub /spl tau// and f/sub max/ for any HBT. The devices have been scaled vertically for reduced electron collector transit time and aggressively scaled laterally to minimize the base-collector capacitance associated with thinner collectors. The dc current gain /spl beta/ is /spl ap/ 40 and V/sub BR,CEO/=3.9 V. The devices operate up to 25 mW//spl mu/m/sup 2/ dissipation (failing at J/sub e/=10 mA//spl mu/m/sup 2/, V/sub ce/=2.5 V, /spl Delta/T/sub failure/=301 K) and there is no evidence of current blocking up to J/sub e//spl ges/12 mA//spl mu/m/sup 2/ at V/sub ce/=2.0 V from the base-collector grade. The devices reported here employ a 30-nm highly doped InGaAs base, and a 120-nm collector containing an InGaAs/InAlAs superlattice grade at the base-collector junction.     

The rank and kernel of extended 1-perfect /spl Zopf//sub 4/-linear and additive non-/spl Zopf//sub 4/-linear codes

A binary extended 1-perfect code of length n + 1 = 2/sup t/ is additive if it is a subgroup of /spl Zopf//sub 2//sup /spl alpha// /spl times/ /spl Zopf//sub 4//sup /spl beta//. The punctured code by deleting a /spl Zopf//sub 2/ coordinate (if there is one) gives a perfect additive code. 1-perfect additive codes were completely characterized and by using that characterization we compute the possible parameters /spl alpha/, /spl beta/, rank, and dimension of the kernel for extended 1-perfect additive codes. A very special case is that of extended 1-perfect /spl Zopf//sub 4/-linear codes.     

Design and fabrication of RESURF MOSFETs on 4H-SiC(0001), (112~0), and 6H-SiC(0001)

Design and fabrication of lateral SiC reduced surface field (RESURF) MOSFETs have been investigated. The doping concentration (dose) of the RESURF and lightly doped drain regions has been optimized to reduce the electric field crowding at the drain edge or in the gate oxide by using device simulation. The optimum oxidation condition depends on the polytype: N/sub 2/O oxidation at 1300/spl deg/C seems to be suitable for 4H-SiC, and dry O/sub 2/ oxidation at 1250/spl deg/C for 6H-SiC. The average inversion-channel mobility is 22, 78, and 68 cm/sup 2//Vs for 4H-SiC(0001), (112~0), and 6H-SiC(0001) MOSFETs, respectively. RESURF MOSFETs have been fabricated on 10-/spl mu/m-thick p-type 4H-SiC(0001), (112~0), and 6H-SiC(0001) epilayers with an acceptor concentration of 1/spl times/10/sup 16/ cm/sup -3/. A 6H-SiC(0001) RESURF MOSFET with a 3-/spl mu/m channel length exhibits a high breakdown voltage of 1620 V and an on-resistance of 234 m/spl Omega//spl middot/cm/sup 2/. A 4H-SiC(112~0) RESURF MOSFET shows the characteristics of 1230 V-138 m/spl Omega//spl middot/cm/sup 2/.     

Analysis of the phase noise in saturated SOAs for DPSK applications

A theoretical model is used to analyze the impact of phase noise on the performance of semiconductor optical amplifiers (SOAs) in the saturation regime for differential phase-shift keying (DPSK) applications. It is found that the variance of the differential phase error scales as T/sup 2///spl tau//sub c//sup 2/ for /spl tau//sub c//spl Gt/T, where T is the bit period and /spl tau//sub c/ is the carrier lifetime of the SOA. This suggests that the adverse effect of saturation-induced phase noise can be significantly reduced by increasing the bit rate or the carrier lifetime.     

A novel strained Si/sub 0.7/Ge/sub 0.3/ surface-channel pMOSFET with an ALD TiN/Al/sub 2/O/sub 3//HfAlO/sub x//Al/sub 2/O/sub 3/ gate stack

Proof-of-concept pMOSFETs with a strained-Si/sub 0.7/Ge/sub 0.3/ surface-channel deposited by selective epitaxy and a TiN/Al/sub 2/O/sub 3//HfAlO/sub x//Al/sub 2/O/sub 3/ gate stack grown by atomic layer chemical vapor deposition (ALD) techniques were fabricated. The Si/sub 0.7/Ge/sub 0.3/ pMOSFETs exhibited more than 30% higher current drive and peak transconductance than reference Si pMOSFETs with the same gate stack. The effective mobility for the Si reference coincided with the universal hole mobility curve for Si. The presence of a relatively low density of interface states, determined as 3.3 /spl times/ 10/sup 11/ cm/sup -2/ eV/sup -1/, yielded a subthreshold slope of 75 mV/dec. for the Si reference. For the Si/sub 0.7/Ge/sub 0.3/ pMOSFETs, these values were 1.6 /spl times/ 10/sup 12/ cm/sup -2/ eV/sup -1/ and 110 mV/dec., respectively.     

An abrupt InP-GaInAs-InP DHBT

We report on the performance of abrupt InP-GaInAs-InP double heterojunction bipolar transistors (DHBTs) with a thin heavily doped n-type InP layer at the base-collector interface. The energy barrier between the base and the collector was fully eliminated by a 4-nm-thick silicon doped layer with N/sub D/=3/spl times/10/sup 19/ cm/sup -3/. The obtained f/sub T/ and f/sub MAX/ values at a current density of 1 mA//spl mu/m/sup 2/ are comparable to the values reported for DHBTs with a grade layer between the base and the collector.     

Order statistics from a logistic distribution and applications to survival and reliability analysis

Joint moments involving arbitrary powers of order statistics are the main concern. Consider order statistics u/sub 1/ /spl les/ u/sub 2/ /spl les/ /spl middot//spl middot//spl middot/ /spl les/ u/sub k/ coming from a simple random sample of size n from a real continuous population where u/sub 1/ = x/sub r(1):n/ is order-statistic #r/sub 1/, u/sub 2/ = x/sub r(1)+r(2):n/ is order statistic #(r/sub 1/ + r/sub 2/), et al., and u/sub k/ = x/sub r(1)+/spl middot//spl middot//spl middot/+r(k):n/ is order statistic #(r/sub 1/ +/spl middot//spl middot//spl middot/+ r/sub k/). Product moments are examined of the type E[u/sub 1//sup /spl alpha/(1)/ /spl middot/ u/sub 2//sup /spl alpha/(2)//sub /spl middot/ /spl middot//spl middot//spl middot//spl middot//u/sub k//sup /spl alpha/(k)/] where /spl alpha//sub 1/, ..., /spl alpha//sub k/ are arbitrary quantities that might be complex numbers, and E[/spl middot/] denotes the s-expected value. Some explicit evaluations are considered for a logistic population. Detailed evaluations of all integer moments of u/sub 1/ and recurrence relations, recurring only on the order of the moments, are given. Connections to survival functions in survival analysis, hazard functions in reliability situations, real type-1, type-2 /spl beta/ and Dirichlet distributions are also examined. Arbitrary product moments for the survival functions are evaluated. Very general results are obtained which can be used in many problems in various areas.     

Path to the measurement of positive gain on the 1315-nm transition of atomic iodine pumped by O/sub 2/(a/sup 1//spl Delta/) produced in an electric discharge

Laser action at 1315 nm on the I(/sup 2/P/sub 1/2/)/spl rarr/I(/sup 2/P/sub 3/2/) transition of atomic iodine is conventionally obtained by a near-resonant energy transfer from O/sub 2/(a/sup 1//spl Delta/) which is produced using wet-solution chemistry. The system difficulties of chemically producing O/sub 2/(a/sup 1//spl Delta/) have motivated investigations into gas phase methods to produce O/sub 2/(a/sup 1//spl Delta/) using low-pressure electric discharges. We report on the path that led to the measurement of positive gain on the 1315-nm transition of atomic iodine where the O/sub 2/(a/sup 1//spl Delta/) was produced in a flowing electric discharge. Atomic oxygen was found to play both positive and deleterious roles in this system, and as such the excess atomic oxygen was scavenged by NO/sub 2/ to minimize the deleterious effects. The discharge production of O/sub 2/(a/sup 1//spl Delta/) was enhanced by the addition of a small proportion of NO to lower the ionization threshold of the gas mixture. The electric discharge was upstream of a continuously flowing supersonic cavity, which was employed to lower the temperature of the flow and shift the equilibrium of atomic iodine more in favor of the I(/sup 2/P/sub 1/2/) state. A tunable diode laser system capable of scanning the entire line shape of the (3,4) hyperfine transition of iodine provided the gain measurements.     

Lognormal selection with applications to lifetime data

We consider selection problems on k lognormal (/spl mu//sub i/,/spl sigma//sub i//sup 2/) populations when the /spl sigma//sub i//sup 2/ are unequal, under both known & unknown cases. Selection based on linear functions of /spl mu/ & /spl sigma//sup 2/ are considered. For the unequal & unknown /spl sigma//sub i//sup 2/ case, a two-stage Rinott-type asymptotic procedure is proposed. In consideration to reliability & survival analysis applications, an asymptotic procedure is also proposed for the parametric selection based on the /spl alpha/-quantiles. Simulation studies to evaluate the procedures & to compare the latter procedure to the nonparametric procedure based on the /spl alpha/-quantiles are presented. The procedures are demonstrated using examples from reliability & quality control.     

10-kV, 123-m/spl Omega//spl middot/cm/sup 2/ 4H-SiC power DMOSFETs

10-kV, 123-m/spl Omega//spl middot/cm/sup 2/ power DMOSFETs in 4H-SiC are demonstrated. A 42% reduction in R/sub on,sp/, compared to a previously reported value, was achieved by using an 8 /spl times/ 10/sup 14/ cm/sup -3/ doped, 85-/spl mu/m-thick drift epilayer. An effective channel mobility of 22 cm/sup 2//Vs was measured from a test MOSFET. A specific on-resistance of 123 m/spl Omega//spl middot/cm/sup 2/ were measured with a gate bias of 18 V, which corresponds to an E/sub ox/ of 3 MV/cm. A leakage current of 197 /spl mu/A was measured at a drain bias of 10 kV from a 4H-SiC DMOSFET with an active area of 4.24 /spl times/ 10/sup -3/ cm/sup 2/. A switching time of 100 ns was measured in 4.6-kV, 1.3-A switching measurements. This shows that the 4H-SiC power DMOSFETS are ideal for high-voltage, high-speed switching applications.     

Demonstration of 1789 V, 6.68 m/spl Omega/ /spl middot/ cm/sup 2/ 4H-SiC merged-PiN-Schottky diodes

The design, fabrication and characterisation of a high performance 4H-SiC diode of 1789 V-6.6 A with a low differential specific-on resistance (R/sub SP/spl I.bar/ON/) of 6.68 m/spl Omega/ /spl middot/ cm/sup 2/, based on a 10.3 /spl mu/m 4H-SiC blocking layer doped to 6.6/spl times/10/sup 15/ cm/sup -3/, is reported. The corresponding figure-of-merit of V/sub B//sup 2//R/sub SP/spl I.bar/ON/ for this diode is 479 MW/cm/sup 2/, which substantially surpasses previous records for all other MPS diodes.     

A class of 1-generator quasi-cyclic codes

If R = F/sub q/[x/spl rceil/]/(x/sup m/ - 1), S = F/sub qn/[x]/(x/sup m/ - 1), we define the mapping a_(x) /spl rarr/ A(x) =/spl sigma//sub 0//sup n-1/a/sub i/(x)/spl alpha//sub i/ from R/sup n/ onto S, where (/spl alpha//sub 0/, /spl alpha//sub i/,..., /spl alpha//sub n-1/) is a basis for F/sub qn/ over F/sub q/. This carries the q-ray 1-generator quasicyclic (QC) code R a_(x) onto the code RA(x) in S whose parity-check polynomial (p.c.p.) is defined as the monic polynomial h(x) over F/sub q/ of least degree such that h(x)A(x) = 0. In the special case, where gcd(q, m) = 1 and where the prime factorizations of x/sub m/ 1 over F/sub q/ and F/sub qn/ are the same we show that there exists a one-to-one correspondence between the q-ary 1-generator quasis-cyclic codes with p.c.p. h(x) and the elements of the factor group J* /I* where J is the ideal in S with p.c.p. h(x) and I the corresponding quantity in R. We then describe an algorithm for generating the elements of J*/I*. Next, we show that if we choose a normal basis for F/sub qn/ over F/sub q/, then we can modify the aforementioned algorithm to eliminate a certain number of equivalent codes, thereby rending the algorithm more attractive from a computational point of view. Finally in Section IV, we show how to modify the above algorithm in order to generate all the binary self-dual 1-generator QC codes.     

Improving the Gilbert-Varshamov bound for q-ary codes

Given positive integers q,n, and d, denote by A/sub q/(n,d) the maximum size of a q-ary code of length n and minimum distance d. The famous Gilbert-Varshamov bound asserts that A/sub q/(n,d+1)/spl ges/q/sup n//V/sub q/(n,d) where V/sub q/(n,d)=/spl Sigma//sub i=0//sup d/ (/sub i//sup n/)(q-1)/sup i/ is the volume of a q-ary sphere of radius d. Extending a recent work of Jiang and Vardy on binary codes, we show that for any positive constant /spl alpha/ less than (q-1)/q there is a positive constant c such that for d/spl les//spl alpha/n A/sub q/(n,d+1)/spl ges/cq/sup n//V/sub q/(n,d)n. This confirms a conjecture by Jiang and Vardy.